摘要:
An acetal resin composition comprising:(A) 100 parts by weight of an acetal resin,(B) 0.01 to 5 parts by weight of a terminal-etherified polyalkylene glycol of the formula (I)R.sup.1 --O--(--R.sup.2 --O--).sub.m --R.sup.3wherein R.sup.1 is a hydrogen atom, an aliphatic hydrocarbon group having 1 to 7 carbon atoms, an aryl group or an aralkyl group, R.sup.2 is an alkylene group having 2 to 3 carbon atoms, R.sup.3 is an aliphatic hydrocarbon group having 1 to 7 carbon atoms, an aryl group or an aralkyl group, and m is a number of at least 20, and(C) 0.01 to 2 parts by weight of an ester from a polyhydric alcohol having 2 to 10 carbon atoms and a higher fatty acid having 22 to 32 carbon atoms. This acetal resin composition has highly improved mold releasability when injection-molded without any substantial impairment of mechanicla properties and thermal stability inherent to an acetal resin and gives precision molded articles having little molding strain.
摘要:
An oxymethylene copolymer composition which comprises an intimate mixture containing:(A) 100 parts by weight of an oxymethylene copolymer,(B) 0.01 to 2 parts by weight of an ester composed of a polyhydric alcohol having 2 to 10 carbon atoms and a higher fatty acid having 22 to 32 carbon atoms, and(C) 0.01 to 3 parts by weight of an alkaline earth metal salt of a fatty acid having 12 to 35 carbon atoms.
摘要:
Transflective-type and reflection type liquid crystal display devices having a high image quality are provided with a good production efficiency.A liquid crystal display device according to the present invention is a liquid crystal display device which includes; a first substrate and a second substrate between which liquid crystal is interposed; a first electrode and a second electrode formed on the first substrate for applying a voltage for controlling an orientation of the liquid crystal; a transistor having an electrode which is electrically connected to the first electrode; a metal layer being formed on the first substrate and including a protrusion, a recess, or an aperture; and a reflective layer formed above the metal layer on the first substrate for reflecting incident light toward a display surface. The metal layer is made of a same material as that of a gate electrode of the transistor. The reflective layer includes a protrusion, a recess, or a level difference which is formed in accordance with a protrusion, a recess, or an aperture of the metal layer.
摘要:
A semiconductor device (100) according to the present invention includes a thin film transistor (10) having a gate electrode (62a), a first insulating layer (64), an oxide semiconductor layer (66a), a protection layer (68), a source electrode (72as), and a second insulating layer (74). A first connecting portion (30) includes a lower metal layer (72c), an upper metal layer (72c), and an insulating layer (74). A second connecting portion (40) includes a lower metal layer (72d) and an upper conductive layer (17d). A region in which the lower metal layer (72d) is in contact with the upper conductive layer (17d), and a region in which an insulating layer (74) made of a same material as the first insulating layer and a semiconductor layer (66d) made of a same material as the oxide semiconductor layer (66a) are stacked in between the lower metal layer (72d) and the upper conductive layer (17d), are formed in the second connecting portion (40). As a result, a semiconductor device with a higher performance can be provided with a high production efficiency.
摘要:
A semiconductor device (1000) includes a thin film transistor having a gate line (3a), source and drain lines (13as, 13ad), and an island-like oxide semiconductor layer (7), and a capacitor element (105) having a first electrode (3b) formed from the same conductive film as the gate line (3s), a second electrode (13b) formed from the same conductive film as the source line (13as), and a dielectric layer positioned between the first electrode and the second electrode. A gate insulating film (5) has a layered structure including a first insulating layer (5A) containing an oxide and a second insulating layer (5B) disposed on the side closer to the gate electrode closer than the first insulating film and having a higher dielectric constant than the first insulating film, the layered structure being in contact with the oxide semiconductor layer (7). The dielectric layer includes the second insulating film (5B) but does not include the first insulating film (5A). Accordingly, the deterioration of the oxide semiconductor layer due to oxygen deficiency can be suppressed without reducing the capacitance value of the capacitor element).
摘要:
A liquid crystal display device (100) of the present invention has a plurality of pixels (P) which are in a matrix arrangement and includes: a first substrate (1) which includes a pixel electrode (12) which is provided in each pixel; a second substrate (2) which opposes the first substrate; and a vertical alignment liquid crystal layer (3) which is provided between these substrates, wherein light that is incident on the liquid crystal layer is circularly-polarized light, and the liquid crystal layer modulates the circularly-polarized light, thereby realizing display. The pixel electrode includes at least one cruciform trunk portion (12a), a plurality of branch portions (12b) extending from the at least one cruciform trunk portion in a direction of about 45°, and a plurality of slits (12c) provided between the plurality of branch portions. The second substrate includes a plurality of counter electrodes (22) which are electrically independent of each other in each pixel. According to the present invention, in a liquid crystal display device which includes a vertical alignment liquid crystal, the γ shift can be sufficiently reduced, and decrease of the transmittance can be prevented.
摘要:
A liquid crystal display device, which can be a transflective-type or a reflection-type, includes a reflection section arranged to reflect incident light toward a display surface, wherein the reflection section includes a reflective layer provided on a substrate, and includes a first recess formed in a surface of the reflective layer and a second recess formed in the surface of the reflective layer in the first recess. The first recess corresponds to an aperture of a Cs metal layer, and the second recess corresponds to an aperture of a semiconductor layer. The transflective-type or reflection-type liquid crystal display device has a high image quality at low cost.
摘要:
A transflective-type and a reflection-type liquid crystal display device having a high reflection efficiency and a high image quality are provided. A liquid crystal display device of the present invention is a liquid crystal display device including a reflection region for reflecting incident light toward a display surface, wherein the reflection region includes a metal layer, an insulating layer formed on the metal layer, a semiconductor layer formed on the insulating layer, and a reflective layer formed on the semiconductor layer; a plurality of recesses are formed in at least one of the metal layer, the insulating layer and the semiconductor layer; a plurality of dents are formed in the reflective layer in the reflection region according to the plurality of recesses; and a shortest distance a between edge portions of at least two of the plurality of recesses is 4 μm or less.
摘要:
A reflection-type or transflective-type liquid crystal display device having a high image quality, which has an excellent efficiency of utility of reflected light, is provided at low cost.A liquid crystal display device according to the present invention is a liquid crystal display device having a plurality of pixels, and including, in each of the plurality of pixels, a reflection section for reflecting incident light toward a display surface. The reflection section includes a metal layer having a plurality of apertures, and a reflective layer formed on the metal layer with an insulating layer interposed therebetween. A surface of the reflective layer includes a plurality of recesses or protrusions formed in accordance with a cross-sectional shape of the metal layer. Regarding distance between two adjoining apertures among the plurality of apertures of the metal layer, a shortest distance is no less than 0.3 μm and no more than 3.0 μm.
摘要:
A TFT substrate (20a) includes: an insulating substrate (10a); a plurality of source terminals (15) located on the insulating substrate (10a); and a first terminal cover (24) covering part of each of the source terminals (15) and made of an oxide semiconductor. The first terminal cover (24) is removed in a region R between adjacent ones of the source terminals (15).