公开(公告)号：US08263991B2

公开(公告)日：2012-09-11

申请号：US11979963

申请日：2007-11-13

Applicant: Kuo-Chin Huang ,  Shyi-Ming Pan ,  Cheng-Kuo Huang ,  Chi-Yang Chuang ,  Fen-Ren Chien

Inventor： Kuo-Chin Huang ,  Shyi-Ming Pan ,  Cheng-Kuo Huang ,  Chi-Yang Chuang ,  Fen-Ren Chien

IPC: H01L33/00

CPC classification number: H01L33/405 ,  H01L33/32 ,  H01L33/40 ,  H01L33/46

Abstract: A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer. Therefore, both LED brightness and efficiency are improved. Moreover, adhesion between the conductive layer and the p-type semiconductor layer is improved so that metal peel-off problem during manufacturing processes can be improved.

Abstract translation: 公开了一种发光氮化镓III-V族化合物半导体器件及其制造方法。 发光器件包括衬底，衬底上的n型半导体层，n型半导体层上的有源层，有源层上的p型半导体层，p型半导体层上的导电层 设置在导电层上的第一电极和布置在n型半导体层的暴露部分上的第二电极。 对应于第一电极，在p型半导体层上设置电阻反射层或接触窗，使得电流通过电阻反射层旁边或通过接触窗到有源层产生光。 当光传输到导电层以发射时，其不被第一电极吸收或屏蔽。 因此，电流在导电层上有效地分布。 因此，提高了LED的亮度和效率。 此外，改善了导电层和p型半导体层之间的粘附性，从而可以提高制造工艺期间的金属剥离问题。

公开(公告)号：US20090275156A1

公开(公告)日：2009-11-05

申请号：US12458482

申请日：2009-07-14

Applicant: Kuo-Chin Huang ,  Shyi-Ming Pan ,  Cheng-Kuo Huang ,  Chi-Yang Chuang ,  Fen-Ren Chien

Inventor： Kuo-Chin Huang ,  Shyi-Ming Pan ,  Cheng-Kuo Huang ,  Chi-Yang Chuang ,  Fen-Ren Chien

IPC: H01L21/20

CPC classification number: H01L33/405 ,  H01L33/32 ,  H01L33/40 ,  H01L33/46

Abstract: A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer. Therefore, both LED brightness and efficiency are improved. Moreover, adhesion between the conductive layer and the p-type semiconductor layer is improved so that metal peel-off problem during manufacturing processes can be improved.

Abstract translation: 公开了一种发光氮化镓III-V族化合物半导体器件及其制造方法。 发光器件包括衬底，衬底上的n型半导体层，n型半导体层上的有源层，有源层上的p型半导体层，p型半导体层上的导电层 设置在导电层上的第一电极和布置在n型半导体层的暴露部分上的第二电极。 对应于第一电极，在p型半导体层上设置电阻反射层或接触窗，使得电流通过电阻反射层旁边或通过接触窗到有源层产生光。 当光传输到导电层以发射时，其不被第一电极吸收或屏蔽。 因此，电流在导电层上有效地分布。 因此，提高了LED的亮度和效率。 此外，改善了导电层和p型半导体层之间的粘附性，从而可以提高制造工艺期间的金属剥离问题。

公开(公告)号：US20090189172A1

公开(公告)日：2009-07-30

申请号：US12106277

申请日：2008-04-19

Applicant: Shyi-Ming Pan ,  Wei-Kang Cheng ,  Kuo-Chin Huang

Inventor： Shyi-Ming Pan ,  Wei-Kang Cheng ,  Kuo-Chin Huang

IPC: H01L33/00

CPC classification number: H01L33/44 ,  H01L33/22 ,  H01L33/508 ,  H01L33/60 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/45139 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/00

Abstract: A light emitting diode (LED) with higher illumination efficiency is revealed. The LED includes a LED chip and an optical layer arranged on the bottom of the LED chip. The optical layer is a light-guiding layer, a light reflective layer or an energy-conversion layer that increases light emitting efficiency of the LED. Furthermore, a rough layer is disposed between the LED chip and the optical layer so as to increase surface area of the LED chip. Thus light emitted from the LED chip enters the optical layer more easily and the illumination efficiency of the LED is increased.

公开(公告)号：USD566670S1

公开(公告)日：2008-04-15

申请号：US29246462

申请日：2006-04-14

Applicant: Kuo-Chin Huang

Designer： Kuo-Chin Huang

公开(公告)号：US20100052494A1

公开(公告)日：2010-03-04

申请号：US12329770

申请日：2008-12-08

Applicant: Hui Ching FENG ,  Kuo-Chin Huang ,  Shyi-Ming Pan ,  Hung-Li Pan

Inventor： Hui Ching FENG ,  Kuo-Chin Huang ,  Shyi-Ming Pan ,  Hung-Li Pan

IPC: H01J1/00

CPC classification number: H01L25/0753 ,  H01L27/156 ,  H01L33/62 ,  H01L2224/4847 ,  H01L2224/49107 ,  Y10S257/918

Abstract: An alternating current (AC) light emitting device is revealed. The AC light emitting device includes a substrate and a plurality of light emitting units arranged on the substrate. The light emitting unit consists of a first semiconductor layer, a light emitting layer, a second semiconductor layer, at least one electrode and at least one second electrode respectively arranged on the first semiconductor layer and the second semiconductor layer from bottom to top. The plurality of light emitting units is coupled to at least one adjacent light emitting unit by a plurality of conductors. By the plurality of conductors that connect light emitting units with at least one adjacent light emitting unit, an open circuit will not occur in the AC light emitting device once one of the conductors is broken.

Abstract translation: 发现交流（AC）发光器件。 AC发光装置包括基板和布置在基板上的多个发光单元。 发光单元由第一半导体层，发光层，第二半导体层，至少一个电极和至少一个第二电极组成，第一半导体层，第一半导体层和第二半导体层分别从底部到顶部布置。 多个发光单元通过多个导体耦合到至少一个相邻的发光单元。 通过将发光单元与至少一个相邻的发光单元连接的多个导体，一旦导体断开，AC发光器件将不会发生开路。

公开(公告)号：US20100032690A1

公开(公告)日：2010-02-11

申请号：US12349055

申请日：2009-01-06

Applicant: Hui Ching Feng ,  Kuo-Chin Huang ,  Shyi-Ming Pan ,  Hung-Li Pan ,  Yin-Cheng Chu

Inventor： Hui Ching Feng ,  Kuo-Chin Huang ,  Shyi-Ming Pan ,  Hung-Li Pan ,  Yin-Cheng Chu

IPC: H01L33/00

CPC classification number: H01L25/0753 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/14 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: The present invention is related to a light emitting device with an insulating layer, which comprises a transparent substrate, a first light emitting unit, a second light emitting unit, an insulating layer and a conducting layer. The first light emitting unit and the second light emitting unit are set up on the transparent substrate, wherein the second light emitting unit has an appearance of a stair structure. The insulating layer is set between the first and the second light emitting units. The conducting layer is on the insulating layer in order to conduct the first and the second light emitting units. Because of the appearance of the stair structure of the second light emitting unit, improving the cladding efficiency of the insulating layer, further improving the insulating efficiency of the insulating layer and avoiding the insulating layer loosing and the leakage between the first and the second light emitting units.

Abstract translation: 本发明涉及具有绝缘层的发光器件，其包括透明衬底，第一发光单元，第二发光单元，绝缘层和导电层。 第一发光单元和第二发光单元设置在透明基板上，其中第二发光单元具有楼梯结构的外观。 绝缘层设置在第一和第二发光单元之间。 导电层位于绝缘层上，以便传导第一和第二发光单元。 由于第二发光单元的楼梯结构的出现，提高绝缘层的包层效率，进一步提高绝缘层的绝缘效率，避免绝缘层松动以及第一和第二发光二极管之间的泄漏 单位。

公开(公告)号：US20090310357A1

公开(公告)日：2009-12-17

申请号：US12453253

申请日：2009-05-05

Applicant: Kuo-Chin Huang

Inventor： Kuo-Chin Huang

IPC: F21V1/00 ,  F21V5/00 ,  F21V7/00

CPC classification number: F21V7/09 ,  F21V13/04 ,  F21Y2115/10

Abstract: This invention relates to a collimation structure of LED module and a lamp using said LED module. The collimation structure of the present invention mainly has a lens provided at a place along the irradiation direction of the light beam emitted from LED. The lens has a first curved surface and a second curved surface, and the curvatures of both are different from each other. In this manner, the object of collimating the light emitted from the LED can be achieved by the provision of the first curved surface and the second curved surface and by the difference between the curvatures of the first curved surface and the second curved surface. Moreover, the collimated beam pattern of the light output through the lens can be changed by the variation of the curvatures of the first curved surface and the second curved surface so that said LED can fulfill the requirement of the application in illumination or alarming.

Abstract translation: 本发明涉及LED模块的准直结构和使用所述LED模块的灯。 本发明的准直结构主要具有设置在从LED发射的光束的照射方向的位置处的透镜。 透镜具有第一弯曲表面和第二弯曲表面，并且两者的曲率彼此不同。 以这种方式，可以通过提供第一曲面和第二曲面以及第一曲面与第二曲面的曲率之间的差异来实现对从LED发射的光进行准直的目的。 此外，通过透镜输出的光的准直光束图案可以通过第一曲面和第二曲面的曲率的变化而改变，使得LED可以满足在照明或报警中的应用的要求。

公开(公告)号：US20070294800A1

公开(公告)日：2007-12-27

申请号：US11708329

申请日：2007-02-21

Applicant: Kuo-Chin Huang

Inventor： Kuo-Chin Huang

IPC: A41D3/02

CPC classification number: A41D3/00 ,  A41D27/245 ,  A41H43/00

Abstract: A seamless down cloth and manufacturing method thereof are provided. The cloth comprises a shell fabric, a lining, and down, wherein the down are filled between the shell fabric and the lining, several down areas and pasted areas are spread around the shell fabric, wherein the shell fabric is seamless. The manufacturing method comprises the steps of patterning, cutting, forming down cloth, down filled, and pasting, further, the shell fabric is divided into several down areas by the seamless skill, and every down area is filled the down. The seamless shell fabric can overcome the problem of that the down will bore from the suture, such that can prevent from rain leaking through the suture. The shell fabric can be made by the material with the functions of water proof, wind proof, and moisture conductivity, such that the down cloth can be with water proof, wind proof, and warm keeping surely.

Abstract translation: 提供了一种无缝下布及其制造方法。 布料包括外壳织物，衬里和下层，其中下层填充在外壳织物和衬里之间，几个下部区域和粘贴区域分布在外壳织物周围，其中外壳织物是无缝的。 制造方法包括图案化，切割，成形布，向下填充和粘贴的步骤，此外，通过无缝技术将外壳织物分成几个下降区域，并且每个下降区域被填充下来。 无缝外壳织物可以克服下降将从缝合线穿孔的问题，从而可以防止雨水通过缝合线渗漏。 外壳织物可以通过具有防水，防风，导湿性能的材料制成，使布料防水，防风，保暖。

公开(公告)号：USD374491S

公开(公告)日：1996-10-08

申请号：US40291

申请日：1995-06-14

Applicant: Kuo-Chin Huang

Designer： Kuo-Chin Huang

公开(公告)号：US08053797B2

公开(公告)日：2011-11-08

申请号：US12234652

申请日：2008-09-20

Applicant: Wei-Kang Cheng ,  Shyi-Ming Pan ,  Cheng-Kuo Huang ,  Yin-Cheng Chu ,  Kuo-Chin Huang

Inventor： Wei-Kang Cheng ,  Shyi-Ming Pan ,  Cheng-Kuo Huang ,  Yin-Cheng Chu ,  Kuo-Chin Huang

IPC: H01L33/00

CPC classification number: H01L33/46 ,  H01L33/64

Abstract: The present invention provides a light-emitting device with a reflection layer and the structure of the reflection layer. The reflection layer comprises a variety of dielectric materials. The reflection layer includes a plurality of dielectric layers. The materials of the plurality of dielectric layers have two or more types with two or more thicknesses, except for the combination of two material types and two thicknesses, for forming the reflection layer with a variety of structures. The reflection layer according to the present invention can be applied to light-emitting diodes of various types to form new light-emitting devices. Owing to its excellent reflectivity, the reflection layer can improve light-emitting efficiency of the light-emitting devices.

Abstract translation: 本发明提供一种具有反射层的发光装置和反射层的结构。 反射层包括各种介电材料。 反射层包括多个电介质层。 除了两种材料类型和两种厚度的组合之外，多个电介质层的材料具有两种或更多种类型，具有两种或更多种厚度，用于形成具有各种结构的反射层。 根据本发明的反射层可以应用于各种类型的发光二极管，以形成新的发光器件。 由于反射率优异，因此能够提高发光元件的发光效率。