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24 条记录 (耗时 0.031 秒)

    Method and device for performing data synchronization of a snapshot image by selectively reloading data from nonvolatile to volatile memory after wakeup from hibernation
    12.
    发明授权
    Method and device for performing data synchronization of a snapshot image by selectively reloading data from nonvolatile to volatile memory after wakeup from hibernation 有权
    用于通过在从休眠状态唤醒之后选择性地将数据从非易失性存储器重新加载到易失性存储器来执行快照图像数据同步的方法和装置

    公开(公告)号：US08819403B2

    公开(公告)日：2014-08-26

    申请号：US13276718

    申请日：2011-10-19

    申请人： Kyoung Hoon Kim ,  Sung Hwan Yun ,  Ho Sun Lee

    发明人： Kyoung Hoon Kim ,  Sung Hwan Yun ,  Ho Sun Lee

    IPC分类号： G06F9/00 ,  G06F9/44

    CPC分类号： G06F9/4418 ,  G06F9/4401 ,  G06F9/4406 ,  Y02D10/44

    摘要： A method and apparatus for supporting a hibernation function in a mobile device are provided. In the method, the mobile device detects a wakeup event in a hibernation mode and, in response to the wakeup event, loads a snapshot image into a volatile memory from a snapshot image region of a nonvolatile memory. After the loading of the snapshot image, the mobile device determines whether there is a system status has been modified. If the system status has not been modified, the mobile device finishes a system boot. If the system status has been modified, the mobile device performs data synchronization and then finishes the system boot.

    摘要翻译： 提供了一种用于在移动设备中支持休眠功能的方法和装置。 在该方法中，移动设备在休眠模式下检测唤醒事件，并且响应于唤醒事件，将快照图像从非易失性存储器的快照图像区域加载到易失性存储器中。 在加载快照图像之后，移动设备确定是否存在系统状态已被修改。 如果系统状态未被修改，移动设备将完成系统启动。 如果系统状态已被修改，则移动设备执行数据同步，然后完成系统启动。

    Method of forming nitride semiconductor layer on patterned substrate and light emitting diode having the same
    14.
    发明授权
    Method of forming nitride semiconductor layer on patterned substrate and light emitting diode having the same 有权
    在图案化基板上形成氮化物半导体层的方法和具有该氮化物半导体层的发光二极管

    公开(公告)号：US07638414B2

    公开(公告)日：2009-12-29

    申请号：US12040439

    申请日：2008-02-29

    申请人： Joo Won Choi ,  Kyoung Hoon Kim ,  Eu Jin Hwang

    发明人： Joo Won Choi ,  Kyoung Hoon Kim ,  Eu Jin Hwang

    IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L29/20

    CPC分类号： H01L33/12 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/22

    摘要： A method of forming high quality nitride semiconductor layers on a patterned substrate and a light emitting diode having the same are disclosed. After forming a nucleation layer on the patterned substrate, a first 3D and 2D growth layers are formed thereon in this order by growing nitride semiconductor layers in 3D and 2D growth conditions. Then, a second 3D growth layer is formed on the first 2D growth layer by growing a nitride semiconductor layer in another 3D growth condition, and a second 2D growth layer is formed on the second 3D growth layer by growing a nitride semiconductor layer in another 2D growth condition. As such, the thickness of the 3D growth layer can be reduced by alternately forming the 3D and 2D growth layers, thereby preventing the 3D growth layer from having a rough surface and improving crystal quality of the final 2D growth layer.

    摘要翻译： 公开了在图案化基板上形成高质量氮化物半导体层的方法和具有该氮化物半导体层的发光二极管。 在图案化的衬底上形成成核层之后，通过在3D和2D生长条件下生长氮化物半导体层，依次形成第一3D和2D生长层。 然后，通过在另一3D生长条件下生长氮化物半导体层，在第一2D生长层上形成第二3D生长层，并且通过在另一2D中生长氮化物半导体层，在第二3D生长层上形成第二2D生长层 生长条件。 因此，可以通过交替地形成3D和2D生长层来减少3D生长层的厚度，从而防止3D生长层具有粗糙表面并提高最终2D生长层的晶体质量。

    METHOD OF FORMING NITRIDE SEMICONDUCTOR LAYER ON PATTERNED SUBSTRATE AND LIGHT EMITTING DIODE HAVING THE SAME
    15.
    发明申请
    METHOD OF FORMING NITRIDE SEMICONDUCTOR LAYER ON PATTERNED SUBSTRATE AND LIGHT EMITTING DIODE HAVING THE SAME 有权
    在形成基底的氮化物半导体层和其发光二极管上形成氮化物层的方法

    公开(公告)号：US20080217647A1

    公开(公告)日：2008-09-11

    申请号：US12040439

    申请日：2008-02-29

    申请人： Joo Won Choi ,  Kyoung Hoon Kim ,  Eu Jin Hwang

    发明人： Joo Won Choi ,  Kyoung Hoon Kim ,  Eu Jin Hwang

    IPC分类号： H01L21/20

    CPC分类号： H01L33/12 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/22

    摘要： A method of forming high quality nitride semiconductor layers on a patterned substrate and a light emitting diode having the same are disclosed. After forming a nucleation layer on the patterned substrate, a first 3D and 2D growth layers are formed thereon in this order by growing nitride semiconductor layers in 3D and 2D growth conditions. Then, a second 3D growth layer is formed on the first 2D growth layer by growing a nitride semiconductor layer in another 3D growth condition, and a second 2D growth layer is formed on the second 3D growth layer by growing a nitride semiconductor layer in another 2D growth condition. As such, the thickness of the 3D growth layer can be reduced by alternately forming the 3D and 2D growth layers, thereby preventing the 3D growth layer from having a rough surface and improving crystal quality of the final 2D growth layer.

    摘要翻译： 公开了在图案化基板上形成高质量氮化物半导体层的方法和具有该氮化物半导体层的发光二极管。 在图案化的衬底上形成成核层之后，通过在3D和2D生长条件下生长氮化物半导体层，依次形成第一3D和2D生长层。 然后，通过在另一3D生长条件下生长氮化物半导体层，在第一2D生长层上形成第二3D生长层，并且通过在另一2D中生长氮化物半导体层，在第二3D生长层上形成第二2D生长层 生长条件。 因此，可以通过交替地形成3D和2D生长层来减少3D生长层的厚度，从而防止3D生长层具有粗糙表面并提高最终2D生长层的晶体质量。

    Light emitting diode
    16.
    发明授权
    Light emitting diode 有权
    发光二极管

    公开(公告)号：US09024339B2

    公开(公告)日：2015-05-05

    申请号：US11993955

    申请日：2006-06-23

    申请人： Kyoung Hoon Kim

    发明人： Kyoung Hoon Kim

    IPC分类号： H01L33/00 ,  H01L33/08 ,  H01L33/32 ,  H01L33/50

    CPC分类号： H01L33/08 ,  H01L33/32 ,  H01L33/502

    摘要： The present invention provides a light emitting diode which comprises a substrate, a light emitting layer including an N-type semiconductor layer and a P-type semiconductor layer formed on the substrate, and a wavelength conversion layer formed on the light emitting layer or on the back of the substrate. The wavelength conversion layer is formed of a Group III nitride semiconductor doped with rare earth elements. The rare earth elements include at least one of Tm, Er and Eu. According to a light emitting diode of the present invention, a desired color can be implemented in various ways by converting the wavelength of primary light emitted from a light emitting chip. Thus, the reliability and quality of products can be improved due to the uniform emission of light with a desired color. Further, since the existing semiconductor process can be utilized in the present invention, its fabrication process can be simplified, process cost and time can be reduced, and the compact products can be obtained.

    摘要翻译： 本发明提供了一种发光二极管，其包括基板，包括形成在基板上的N型半导体层和P型半导体层的发光层和形成在发光层上的波长转换层 衬底背面。 波长转换层由掺杂有稀土元素的III族氮化物半导体形成。 稀土元素包括Tm，Er和Eu中的至少一种。 根据本发明的发光二极管，可以通过转换从发光芯片发射的一次光的波长以各种方式实现所需的颜色。 因此，由于具有期望的颜色的光的均匀发射，可以提高产品的可靠性和质量。 此外，由于现有的半导体工艺可以用于本发明，可以简化其制造工艺，并且可以减少工艺成本和时间，并且可以获得紧凑的产品。

    Light Emitting Diode
    18.
    发明申请
    Light Emitting Diode 审中-公开
    发光二极管

    公开(公告)号：US20080258131A1

    公开(公告)日：2008-10-23

    申请号：US12065465

    申请日：2006-09-29

    申请人： Kyoung Hoon Kim

    发明人： Kyoung Hoon Kim

    IPC分类号： H01L33/00

    CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06

    摘要： The present invention relates to a light emitting diode. More specifically, the present invention relates to a light emitting diode comprising an N-type semiconductor layer formed on a substrate, an active layer formed on the N-type semiconductor layer and a P-type semiconductor layer formed on the active layer, wherein the active layer is formed to have either a quantum well structure in which an AlxGa1-xN (0≦x

    摘要翻译： 本发明涉及一种发光二极管。 更具体地，本发明涉及一种发光二极管，其包括形成在衬底上的N型半导体层，形成在N型半导体层上的有源层和形成在有源层上的P型半导体层，其中， 有源层形成为具有其中Al x Ga 1-x N（0 <= x <1）阱层和AlN势垒层的量子阱结构 交替层叠或其中阱层和阻挡层由含有磷（P）的化合物半导体层形成并且交替层叠的量子阱结构。 因此，可以容易地发射远紫外光，并且还可以提高发光二极管的光功率。

    Light Emitting Device Having Vertically Stacked Light Emitting Diodes
    19.
    发明申请
    Light Emitting Device Having Vertically Stacked Light Emitting Diodes 有权
    具有垂直堆叠发光二极管的发光器件

    公开(公告)号：US20080211400A1

    公开(公告)日：2008-09-04

    申请号：US12064228

    申请日：2006-09-27

    申请人： Sung Han Kim ,  Kyoung Hoon Kim

    发明人： Sung Han Kim ,  Kyoung Hoon Kim

    IPC分类号： H01L33/00 ,  H01J1/62

    CPC分类号： H01L33/08 ,  H01L27/153

    摘要： Disclosed is a light emitting device having vertically stacked light emitting diodes. It comprises a lower semiconductor layer of a first conductive type positioned on a substrate, a semiconductor layer of a second conductive type on the lower semiconductor layer of a first conductive type, and an upper semiconductor layer of a first conductive type on the semiconductor layer of a second conductive type. Furthermore, a lower active layer is interposed between the lower semiconductor layer of a first conductive type and the semiconductor layer of a second conductive type, and an upper active layer is interposed between the semiconductor layer of a second conductive type and the upper semiconductor layer of a first conductive type. Accordingly, there is provided a light emitting device having a structure in which a lower light emitting diode comprising the lower active layer and an upper light emitting diode comprising the upper active layer are vertically stacked. Therefore, light output per unit area of the light emitting device is enhanced as compared with a conventional light emitting device, and thus, a chip area of the light emitting device needed to obtain the same light output as the conventional light emitting device can be reduced.

    摘要翻译： 公开了一种具有垂直堆叠的发光二极管的发光器件。 它包括位于基板上的第一导电类型的下半导体层，在第一导电类型的下半导体层上的第二导电类型的半导体层和第一导电类型的半导体层上半导体层 第二导电类型。 此外，在第一导电类型的下半导体层和第二导电类型的半导体层之间插入下有源层，并且上有源层插入在第二导电类型的半导体层和第二导电类型的半导体层之间 第一导电类型。 因此，提供了一种发光器件，其具有如下结构，其中包括下部有源层的下部发光二极管和包括上部有源层的上部发光二极管垂直堆叠。 因此，与传统的发光器件相比，发光器件的每单位面积的光输出增强，因此可以减少获得与常规发光器件相同的光输出所需的发光器件的芯片面积 。