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    Transistor, electronic device including a transistor and methods of manufacturing the same
    11.
    发明申请
    Transistor, electronic device including a transistor and methods of manufacturing the same 审中-公开
    晶体管，包括晶体管的电子器件及其制造方法

    公开(公告)号：US20100321279A1

    公开(公告)日：2010-12-23

    申请号：US12591914

    申请日：2009-12-04

    申请人： Ji-sim Jung ,  Sang-yoon Lee ,  Kwang-hee Lee ,  Jang-yeon Kwon ,  Kyoung-seok Son

    发明人： Ji-sim Jung ,  Sang-yoon Lee ,  Kwang-hee Lee ,  Jang-yeon Kwon ,  Kyoung-seok Son

    IPC分类号： G09G3/30 ,  H01L29/12 ,  H01L29/786 ,  G09G3/20

    CPC分类号： H01L29/7869 ,  H01L27/3272

    摘要： Disclosed are a transistor, an electronic device and methods of manufacturing the same, the transistor including a photo relaxation layer between a channel layer and a gate insulating layer in order to suppress characteristic variations of the transistor due to light. The photo relaxation layer may be a layer of a material capable of suppressing variations in a threshold voltage of the transistor due to light. The photo relaxation layer may contain a metal oxide such as aluminum (Al) oxide. The channel layer may contain an oxide semiconductor.

    摘要翻译： 公开了晶体管，电子器件及其制造方法，晶体管包括沟道层和栅极绝缘层之间的光弛豫层，以抑制由于光引起的晶体管的特性变化。 光弛豫层可以是能够抑制由于光引起的晶体管的阈值电压的变化的材料层。 光弛豫层可以含有氧化铝（Al）等金属氧化物。 沟道层可以含有氧化物半导体。

    Methods of manufacturing an oxide semiconductor thin film transistor
    13.
    发明授权
    Methods of manufacturing an oxide semiconductor thin film transistor 有权
    制造氧化物半导体薄膜晶体管的方法

    公开(公告)号：US07767505B2

    公开(公告)日：2010-08-03

    申请号：US12153651

    申请日：2008-05-22

    申请人： Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

    发明人： Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

    IPC分类号： H01L21/84

    CPC分类号： H01L29/7869 ,  H01L29/66969

    摘要： Methods of manufacturing an oxide semiconductor thin film transistor are provided. The methods include forming a gate on a substrate, and a gate insulating layer on the substrate to cover the gate. A channel layer, which is formed of an oxide semiconductor, may be formed on the gate insulating layer. Source and drain electrodes may be formed on opposing sides of the channel layer. The method includes forming supplying oxygen to the channel layer, forming a passivation layer to cover the source and drain electrodes and the channel layer, and performing an annealing process after forming the passivation layer.

    摘要翻译： 提供了制造氧化物半导体薄膜晶体管的方法。 所述方法包括在衬底上形成栅极，以及在衬底上形成栅极绝缘层以覆盖栅极。 可以在栅极绝缘层上形成由氧化物半导体形成的沟道层。 源极和漏极可以形成在沟道层的相对侧上。 所述方法包括：向所述沟道层形成供氧，形成钝化层以覆盖所述源漏电极和所述沟道层，以及在形成所述钝化层之后进行退火处理。

    Methods of manufacturing an oxide semiconductor thin film transistor
    14.
    发明申请
    Methods of manufacturing an oxide semiconductor thin film transistor 有权
    制造氧化物半导体薄膜晶体管的方法

    公开(公告)号：US20090142887A1

    公开(公告)日：2009-06-04

    申请号：US12153651

    申请日：2008-05-22

    申请人： Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

    发明人： Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

    IPC分类号： H01L21/84

    CPC分类号： H01L29/7869 ,  H01L29/66969

    摘要： Methods of manufacturing an oxide semiconductor thin film transistor are provided. The methods include forming a gate on a substrate, and a gate insulating layer on the substrate to cover the gate. A channel layer, which is formed of an oxide semiconductor, may be formed on the gate insulating layer. Source and drain electrodes may be formed on opposing sides of the channel layer. The method includes forming supplying oxygen to the channel layer, forming a passivation layer to cover the source and drain electrodes and the channel layer, and performing an annealing process after forming the passivation layer.

    摘要翻译： 提供了制造氧化物半导体薄膜晶体管的方法。 所述方法包括在衬底上形成栅极，以及在衬底上形成栅极绝缘层以覆盖栅极。 可以在栅极绝缘层上形成由氧化物半导体形成的沟道层。 源极和漏极可以形成在沟道层的相对侧上。 所述方法包括：向所述沟道层形成供氧，形成钝化层以覆盖所述源漏电极和所述沟道层，以及在形成所述钝化层之后进行退火处理。

    Thin film transistors and methods of manufacturing the same
    16.
    发明申请
    Thin film transistors and methods of manufacturing the same 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US20110159646A1

    公开(公告)日：2011-06-30

    申请号：US13064080

    申请日：2011-03-04

    申请人： Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

    发明人： Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

    IPC分类号： H01L21/84

    CPC分类号： H01L29/78696 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/7869

    摘要： A TFT includes a zinc oxide (ZnO)-based channel layer having a plurality of semiconductor layers. An uppermost of the plurality of semiconductor layers has a Zn concentration less than that of a lower semiconductor layer to suppress an oxygen vacancy due to plasma. The uppermost semiconductor layer of the channel layer also has a tin (Sn) oxide, a chloride, a fluoride, or the like, which has a relatively stable bonding energy against plasma. The uppermost semiconductor layer is relatively strong against plasma shock and less decomposed when being exposed to plasma, thereby suppressing an increase in carrier concentration.

    摘要翻译： TFT包括具有多个半导体层的基于氧化锌（ZnO）的沟道层。 多个半导体层的最上部的Zn浓度比下半导体层的Zn浓度低，以抑制由于等离子体引起的氧空位。 沟道层的最上半导体层还具有对等离子体具有相对稳定的结合能的锡（Sn）氧化物，氯化物，氟化物等。 最高的半导体层相对于等离子体冲击相对较强，当暴露于等离子体时分解较少，从而抑制载流子浓度的增加。

    Method of manufacturing ZnO-based thin film transistor
    17.
    发明授权
    Method of manufacturing ZnO-based thin film transistor 有权
    制造ZnO基薄膜晶体管的方法

    公开(公告)号：US07682882B2

    公开(公告)日：2010-03-23

    申请号：US12153674

    申请日：2008-05-22

    申请人： Myung-kwan Ryu ,  Sang-yoon Lee ,  Je-hun Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

    发明人： Myung-kwan Ryu ,  Sang-yoon Lee ,  Je-hun Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

    IPC分类号： H01L21/00

    CPC分类号： H01L29/7869

    摘要： Provided is a method of manufacturing a ZnO-based thin film transistor (TFT). The method may include forming source and drain electrodes using one or two wet etchings. A tin (Sn) oxide, a fluoride, or a chloride having relatively stable bonding energy against plasma may be included in a channel layer. Because the source and drain electrodes are formed by wet etching, damage to the channel layer and an oxygen vacancy may be prevented or reduced. Because the material having higher bonding energy is distributed in the channel layer, damage to the channel layer occurring when a passivation layer is formed may be prevented or reduced.

    摘要翻译： 提供了一种制造ZnO基薄膜晶体管（TFT）的方法。 该方法可以包括使用一个或两个湿蚀刻来形成源极和漏极。 对于等离子体具有相对稳定的结合能的锡（Sn）氧化物，氟化物或氯化物可以包括在通道层中。 因为源电极和漏电极是通过湿蚀刻形成的，所以可以防止或减少对沟道层的损伤和氧空位。 因为具有较高结合能的材料分布在沟道层中，所以可以防止或减少在形成钝化层时对沟道层的损坏。

    Method of forming a polysilicon film, thin film transistor including a polysilicon film and method of manufacturing the same
    18.
    发明申请
    Method of forming a polysilicon film, thin film transistor including a polysilicon film and method of manufacturing the same 有权
    形成多晶硅膜的方法，包括多晶硅膜的薄膜晶体管及其制造方法

    公开(公告)号：US20050139919A1

    公开(公告)日：2005-06-30

    申请号：US10980838

    申请日：2004-11-04

    申请人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

    发明人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

    IPC分类号： H01L21/20 ,  H01L21/00 ,  H01L21/336 ,  H01L27/01 ,  H01L29/786

    CPC分类号： H01L29/66757 ,  H01L29/78603 ,  H01L29/78606

    摘要： In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.

    摘要翻译： 在形成多晶硅膜的方法中，包括多晶硅膜的薄膜晶体管和包括多晶硅膜的薄膜晶体管的制造方法，薄膜晶体管包括基板，基板上的第一导热膜， 与所述第一导热膜相邻的所述第二导热膜，所述第二导热膜的热导率低于所述第一导热膜，所述第二导热膜上的多晶硅膜和与所述第二导热膜相邻的所述第一导热膜 膜和多晶硅膜上的栅极堆叠。 第二导热膜可以在第一导热膜上，或者第一导热膜可以不连续，并且第二导热膜可以介于不连续的第一导热膜的部分之间。