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    Thin film transistors and methods of manufacturing the same
    1.
    发明申请
    Thin film transistors and methods of manufacturing the same 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US20110159646A1

    公开(公告)日：2011-06-30

    申请号：US13064080

    申请日：2011-03-04

    申请人： Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

    发明人： Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

    IPC分类号： H01L21/84

    CPC分类号： H01L29/78696 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/7869

    摘要： A TFT includes a zinc oxide (ZnO)-based channel layer having a plurality of semiconductor layers. An uppermost of the plurality of semiconductor layers has a Zn concentration less than that of a lower semiconductor layer to suppress an oxygen vacancy due to plasma. The uppermost semiconductor layer of the channel layer also has a tin (Sn) oxide, a chloride, a fluoride, or the like, which has a relatively stable bonding energy against plasma. The uppermost semiconductor layer is relatively strong against plasma shock and less decomposed when being exposed to plasma, thereby suppressing an increase in carrier concentration.

    摘要翻译： TFT包括具有多个半导体层的基于氧化锌（ZnO）的沟道层。 多个半导体层的最上部的Zn浓度比下半导体层的Zn浓度低，以抑制由于等离子体引起的氧空位。 沟道层的最上半导体层还具有对等离子体具有相对稳定的结合能的锡（Sn）氧化物，氯化物，氟化物等。 最高的半导体层相对于等离子体冲击相对较强，当暴露于等离子体时分解较少，从而抑制载流子浓度的增加。

    Method of manufacturing ZnO-based thin film transistor
    2.
    发明授权
    Method of manufacturing ZnO-based thin film transistor 有权
    制造ZnO基薄膜晶体管的方法

    公开(公告)号：US07682882B2

    公开(公告)日：2010-03-23

    申请号：US12153674

    申请日：2008-05-22

    申请人： Myung-kwan Ryu ,  Sang-yoon Lee ,  Je-hun Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

    发明人： Myung-kwan Ryu ,  Sang-yoon Lee ,  Je-hun Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

    IPC分类号： H01L21/00

    CPC分类号： H01L29/7869

    摘要： Provided is a method of manufacturing a ZnO-based thin film transistor (TFT). The method may include forming source and drain electrodes using one or two wet etchings. A tin (Sn) oxide, a fluoride, or a chloride having relatively stable bonding energy against plasma may be included in a channel layer. Because the source and drain electrodes are formed by wet etching, damage to the channel layer and an oxygen vacancy may be prevented or reduced. Because the material having higher bonding energy is distributed in the channel layer, damage to the channel layer occurring when a passivation layer is formed may be prevented or reduced.

    摘要翻译： 提供了一种制造ZnO基薄膜晶体管（TFT）的方法。 该方法可以包括使用一个或两个湿蚀刻来形成源极和漏极。 对于等离子体具有相对稳定的结合能的锡（Sn）氧化物，氟化物或氯化物可以包括在通道层中。 因为源电极和漏电极是通过湿蚀刻形成的，所以可以防止或减少对沟道层的损伤和氧空位。 因为具有较高结合能的材料分布在沟道层中，所以可以防止或减少在形成钝化层时对沟道层的损坏。

    Apparatus for atomic layer deposition and method of atomic layer deposition using the same
    6.
    发明申请
    Apparatus for atomic layer deposition and method of atomic layer deposition using the same 审中-公开
    用于原子层沉积的装置和使用其的原子层沉积的方法

    公开(公告)号：US20090291211A1

    公开(公告)日：2009-11-26

    申请号：US12292595

    申请日：2008-11-21

    申请人： Myung-kwan Ryu ,  Kyung-bae Park ,  Sang-yoon Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Byung-wook Yoo ,  Kyung-seok Son ,  Ji-sim Jung

    发明人： Myung-kwan Ryu ,  Kyung-bae Park ,  Sang-yoon Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Byung-wook Yoo ,  Kyung-seok Son ,  Ji-sim Jung

    IPC分类号： C23C16/54 ,  B05B3/18 ,  B05B1/18

    CPC分类号： C23C16/45565 ,  C23C16/45551 ,  C23C16/45574

    摘要： Example embodiments provide an atomic layer deposition apparatus and a method of depositing an atomic layer using the atomic layer deposition apparatus. The atomic layer deposition apparatus may include a reaction chamber, a substrate supporter installed in the reaction chamber to support a substrate, and a shower head that is disposed above the substrate supporter and has at least one nozzle set that simultaneously inject a first source gas, a second source gas, and a purge gas onto the substrate. The method of depositing an atomic layer may include moving at least one of the substrate and the shower head in a first direction and simultaneously depositing at least one first atomic layer and at least one second atomic layer on the substrate by injecting the first source gas, the second source gas, and the purge gas through the shower head while the moving operation is performed.

    摘要翻译： 示例性实施例提供原子层沉积设备和使用原子层沉积设备沉积原子层的方法。 原子层沉积装置可以包括反应室，安装在反应室中以支撑基板的基板支撑件和设置在基板支撑件上方并具有至少一个同时喷射第一源气体的喷嘴组的喷淋头， 第二源气体和吹扫气体到基板上。 沉积原子层的方法可以包括沿第一方向移动衬底和淋浴头中的至少一个，并且通过注入第一源气体同时在衬底上沉积至少一个第一原子层和至少一个第二原子层， 第二源气体和通过淋浴喷头的净化气体进行移动操作。

    ZnO-based thin film transistor and method of manufacturing the same
    8.
    发明授权
    ZnO-based thin film transistor and method of manufacturing the same 有权
    ZnO系薄膜晶体管及其制造方法

    公开(公告)号：US07915610B2

    公开(公告)日：2011-03-29

    申请号：US12615315

    申请日：2009-11-10

    申请人： Myung-kwan Ryu ,  Jun-seong Kim ,  Sang-yoon Lee ,  Euk-che Hwang ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

    发明人： Myung-kwan Ryu ,  Jun-seong Kim ,  Sang-yoon Lee ,  Euk-che Hwang ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

    IPC分类号： H01L29/10

    CPC分类号： H01L29/7869

    摘要： A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near the surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

    摘要翻译： 这里提供了一种ZnO基薄膜晶体管（TFT），以及TFT的制造方法。 ZnO基TFT具有包含ZnO和ZnCl的沟道层，其中ZnCl相对于等离子体具有比ZnO高的结合能。 ZnCl是通过整个沟道层形成的，具体地形成在沟道层表面附近的区域。 由于ZnCl强度足够暴露于等离子体蚀刻气体时不会分解，因此可以防止载流子浓度的增加。 ZnCl在沟道层中的分布可能是由于在沟道层图案化期间在等离子体气体中包含氯（Cl）。