公开(公告)号：US20220270863A1

公开(公告)日：2022-08-25

申请号：US17671211

申请日：2022-02-14

Applicant: LAM RESEARCH CORPORATION

Inventor： Christopher Kimball ,  Hema Swaroop Mopidevi ,  Saravanapriyan Sriraman ,  Tom A. Kamp ,  Darrell Ehrlich ,  Anthony Contreras ,  Chiara Helena Catherina Giammanco Macpherson

IPC: H01J37/32 ,  H01L21/687

Abstract: A moveable edge ring system for a plasma processing system includes a top edge ring and a first edge ring arranged below the top edge ring. A second edge ring is made of conductive material and includes an upper portion, a middle portion and a lower portion. The top edge ring and the second edge ring are configured to move in a vertical direction relative to a substrate support and the first edge ring when biased upwardly by a lift pin. The second edge ring is arranged below the top edge ring and radially outside of the first edge ring.

公开(公告)号：US20220172925A1

公开(公告)日：2022-06-02

申请号：US17437401

申请日：2020-03-10

Applicant: Lam Research Corporation

Inventor： Changyou Jing ,  Oleksandr Mikhnenko ,  Christopher Kimball

IPC: H01J37/32

Abstract: A controller including a voltage sensor coupled to a heater trace integrated in an electrostatic chuck, the voltage sensor configured to sense a voltage difference across the heater trace, wherein the heater trace is associated with a heater zone. The controller including a current sensor coupled to the heater trace and configured to sense a current in the heater trace. The controller including a resistance identifier configured to identify a resistance of the heater trace based on the voltage difference and the current that is sensed. The controller including a temperature correlator configured to approximate a temperature of the heater zone based on the resistance and a correlation function of the heater trace. The correlation function uses a temperature coefficient of resistance of the heater trace.

公开(公告)号：US10804129B2

公开(公告)日：2020-10-13

申请号：US15988581

申请日：2018-05-24

Applicant: Lam Research Corporation

Inventor： Christopher Kimball ,  Keith Gaff ,  Alexander Matyushkin ,  Zhigang Chen ,  Keith Comendant

IPC: H01L21/683 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/285 ,  H01L21/67 ,  H01J37/32

Abstract: An electrostatic chuck assembly for processing a semiconductor substrate is provided. The electrostatic chuck assembly includes a first layer, a baseplate, a second layer, and at least one annular gasket. The first layer includes ceramic material and a first radio frequency (RF) electrode. The first RF electrode is embedded in the ceramic material. The second layer is disposed between the first layer and the baseplate. The at least one annular gasket extends along an upper surface of the baseplate and through the second layer. The at least one annular gasket electrically couples the upper surface of the baseplate to the first RF electrode. RF power passes from the baseplate to the first RF electrode through the at least one annular gasket.

公开(公告)号：US20150181683A1

公开(公告)日：2015-06-25

申请号：US14136826

申请日：2013-12-20

Applicant: Lam Research Corporation

Inventor： Harmeet Singh ,  Christopher Kimball ,  Keith Gaff ,  Tyler Gloski

IPC: H05F3/02 ,  H01L21/683

CPC classification number: H01L21/6833

Abstract: A semiconductor wafer processing apparatus for processing semiconductor wafers comprises a semiconductor wafer processing chamber in which a semiconductor wafer is processed, a process gas source in fluid communication with the processing chamber adapted to supply process gas into the processing chamber, a vacuum source adapted to exhaust process gas and byproducts of the processing from the processing chamber, and an electrostatic chuck assembly. The electrostatic chuck assembly comprises a support surface in a layer of ceramic material on which the semiconductor wafer is supported during processing of the wafer in the chamber, at least one electrostatic clamping electrode embedded in the layer of ceramic material, the at least one electrostatic clamping electrode operable to apply an electrostatic clamping force to the wafer on the support surface when an electrostatic clamping voltage is applied to the clamping electrode, and at least one declamping electrode embedded in the layer of ceramic material above the at least one electrostatic clamping electrode operable to provide a path for draining any residual charge between the wafer and the support surface when the electrostatic clamping voltage is no longer applied to the clamping electrode.

Abstract translation: 一种用于处理半导体晶片的半导体晶片处理装置，包括处理半导体晶片的半导体晶片处理室，与处理室流体连通的处理气体源，其适于将处理气体供应到处理室中，适于排出的真空源 来自处理室的处理气体和副产物以及静电吸盘组件。 静电卡盘组件包括在陶瓷材料层中的支撑表面，其中半导体晶片在腔室中的晶片处理期间被支撑，至少一个静电夹持电极嵌入在陶瓷材料层中，该至少一个静电夹持 电极，其可操作以当静电钳位电压施加到所述夹持电极时将静电夹持力施加到所述支撑表面上的所述晶片;以及至少一个在所述至少一个静电夹持电极上方的陶瓷材料层中的所述电极， 当静电钳位电压不再施加到夹紧电极时，提供用于在晶片和支撑表面之间排出任何残留电荷的路径。

公开(公告)号：US20160111314A1

公开(公告)日：2016-04-21

申请号：US14517095

申请日：2014-10-17

Applicant: Lam Research Corporation

Inventor： Christopher Kimball ,  Keith Gaff ,  Alexander Matyushkin ,  Zhigang Chen ,  Keith Comendant

IPC: H01L21/683 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/285 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/6833 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32724

Abstract: A substrate processing apparatus for processing substrates comprises a processing chamber in which a substrate is processed. A process gas source is adapted to supply process gas into the processing chamber. A RF energy source is adapted to energize the process gas into a plasma state in the processing chamber. A vacuum source is adapted to exhaust byproducts of the processing from the processing chamber. The processing chamber includes an electrostatic chuck assembly having a layer of ceramic material that includes an upper electrostatic clamping electrode and at least one RF electrode, a temperature controlled RF powered baseplate, and at least one annular electrically conductive gasket extending along an outer portion of an upper surface of the temperature controlled RF powered baseplate. The at least one annular electrically conductive gasket electrically couples the upper surface of the temperature controlled RF powered baseplate to the at least one RF electrode.

Abstract translation: 用于处理基板的基板处理装置包括处理基板的处理室。 处理气体源适于将处理气体供应到处理室中。 RF能量源适于将处理气体激励成处理室中的等离子体状态。 真空源适于从处理室排出处理的副产物。 处理室包括具有陶瓷材料层的静电卡盘组件，该层包括上部静电夹持电极和至少一个RF电极，温度控制的RF功率基板，以及至少一个环形导电垫片，其沿着 温控RF射频基板的上表面。 所述至少一个环形导电衬垫将所述受温度控制的RF供电底板的上表面电耦合到所述至少一个RF电极。