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    SILICON ETCH AND CLEAN
    1.
    发明申请
    SILICON ETCH AND CLEAN 审中-公开
    硅蚀刻和清洁

    公开(公告)号：US20160181111A1

    公开(公告)日：2016-06-23

    申请号：US14576978

    申请日：2014-12-19

    Applicant: Lam Research Corporation

    Inventor： Tom A. Kamp ,  Alexander M. Paterson ,  Neema Rastgar

    IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67

    CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32926 ,  H01J2237/334 ,  H01L21/02057 ,  H01L21/02071 ,  H01L21/32137

    Abstract: A method for etching features into a silicon containing etch layer is provided. The etch layer is placed into a plasma processing chamber. An etch gas is flowed into the plasma processing chamber. The etch gas is formed into an etch plasma, wherein the etch plasma etches features into the silicon containing layer leaving silicon containing residue. The flow of etch gas into the plasma processing chamber is stopped. A dry clean gas is flowed into the plasma processing chamber, wherein the dry clean gas comprises NH3 and NF3. The dry clean gas is formed into a plasma, wherein the silicon containing residue is exposed to the dry clean gas plasma, and wherein at least some or all of the silicon containing residue is formed into ammonium containing compounds. The flow of the dry clean gas is stopped. The ammonium compounds are sublimated from the films.

    Abstract translation: 提供了将特征蚀刻到含硅蚀刻层中的方法。 将蚀刻层放置在等离子体处理室中。 蚀刻气体流入等离子体处理室。 蚀刻气体形成为蚀刻等离子体，其中蚀刻等离子体蚀刻到含硅层中，留下含硅残留物。 停止进入等离子体处理室的蚀刻气体的流动。 干净的气体流入等离子体处理室，其中干净的气体包括NH 3和NF 3。 将干燥的干燥气体形成为等离子体，其中将含硅残渣暴露于干燥清洁气体等离子体中，并且其中至少部分或全部含硅残渣形成含铵化合物。 干燥气体的流动停止。 铵化合物从膜中升华。

    Silicon-based deposition for semiconductor processing
    2.
    发明授权
    Silicon-based deposition for semiconductor processing 有权

    公开(公告)号：US10600648B2

    公开(公告)日：2020-03-24

    申请号：US15492662

    申请日：2017-04-20

    Applicant: Lam Research Corporation

    Inventor： Tom A. Kamp ,  Mirzafer K. Abatchev

    IPC: H01L21/033 ,  H01L21/02 ,  H01L21/311 ,  H01J37/32 ,  H01L21/3213

    Abstract: A method for processing a stack with a carbon based patterned mask is provided. The stack is placed in an etch chamber. A silicon oxide layer is deposited by atomic layer deposition over the carbon based patterned mask by providing a plurality of cycles, wherein each of the cycles of the plurality of cycles, comprises providing a silicon precursor deposition phase, comprising flowing an atomic layer deposition precursor gas into the etch chamber, where the atomic layer deposition precursor gas is deposited while plasmaless and stopping the flow of the atomic layer deposition precursor gas and providing an oxygen deposition phase, comprising flowing ozone gas into the etch chamber, wherein the ozone gas binds with the deposited precursor gas while plasmaless and stopping the flow of ozone gas into the etch chamber. Part of the silicon oxide layer is etched. The stack is removed from the etch chamber.

    INTEGRATED ATOMIC LAYER PASSIVATION IN TCP ETCH CHAMBER AND IN-SITU ETCH-ALP METHOD
    3.
    发明申请
    INTEGRATED ATOMIC LAYER PASSIVATION IN TCP ETCH CHAMBER AND IN-SITU ETCH-ALP METHOD 审中-公开

    公开(公告)号：US20190043728A1

    公开(公告)日：2019-02-07

    申请号：US15669871

    申请日：2017-08-04

    Applicant: Lam Research Corporation

    Inventor： Xiang Zhou ,  Tom A. Kamp ,  Yoshie Kimura ,  Duming Zhang ,  Chen Xu ,  John Drewery ,  Alex Paterson

    IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32

    Abstract: A method for etching a substrate includes performing, in a plasma chamber, a first etch of a substrate material using a plasma etch process. The first etch forms features to a first depth in the material. Following the first etch, the method includes performing, in the plasma chamber without removing the substrate from the chamber, an atomic layer passivation (ALP) process to deposit a conformal film of passivation over the mask and the features formed during the first etch. The ALP process uses a vapor from a liquid precursor to form passivation over the features and the mask. The method further includes performing, in the plasma chamber, a second etch of the material using the plasma etch process. The conformal film of passivation is configured to protect the mask and sidewalls of the features during the second etch. A plasma processing system also is described.

    System and method for edge ring wear compensation
    6.
    发明授权
    System and method for edge ring wear compensation 有权

    公开(公告)号：US11538713B2

    公开(公告)日：2022-12-27

    申请号：US16769681

    申请日：2018-11-30

    Applicant: LAM RESEARCH CORPORATION

    Inventor： Tom A. Kamp ,  Carlos Leal-Verdugo

    IPC: H01L21/68 ,  H01L21/67 ,  H01L21/687

    Abstract: A controller for adjusting a height of an edge ring in a substrate processing system includes an edge ring wear calculation module configured to receive at least one input indicative of one or more erosion rates of the edge ring, calculate at least one erosion rate of the edge ring based on the at least one input, and calculate an amount of erosion of the edge ring based on the at least one erosion rate. An actuator control module is configured to adjust the height of the edge ring based on the amount of erosion as calculated by the edge ring wear calculation module.

    CONTROL OF PULSING FREQUENCIES AND DUTY CYCLES OF PARAMETERS OF RF SIGNALS
    8.
    发明公开
    CONTROL OF PULSING FREQUENCIES AND DUTY CYCLES OF PARAMETERS OF RF SIGNALS 审中-公开

    公开(公告)号：US20230223236A1

    公开(公告)日：2023-07-13

    申请号：US18009308

    申请日：2021-06-08

    Applicant: Lam Research Corporation

    Inventor： Tom A. Kamp ,  Yuhou Wang ,  Michael John Martin

    IPC: H01J37/32

    CPC classification number: H01J37/32165 ,  H01J37/32146 ,  H01J37/32174

    Abstract: A method for pulsing is described. The method includes generating a first radio frequency (RF) signal, and pulsing a parameter of the first RF signal between a first parameter level and a second parameter level at a pulsing frequency during a cycle of a digital pulsed signal. The method further includes generating a second RF signal, and pulsing a parameter of the second RF signal at a higher pulsing frequency than the pulsing frequency of the parameter of the first RF signal during the cycle. During the cycle, a start time of pulsing the parameter of the first RF signal is synchronized with a start time of pulsing the parameter of the second RF signal and an end time of pulsing the parameter of the first RF signal is synchronized with an end time of pulsing the parameter of the second RF signal.

    Integrated atomic layer passivation in TCP etch chamber and in-situ etch-ALP method
    9.
    发明授权
    Integrated atomic layer passivation in TCP etch chamber and in-situ etch-ALP method 有权

    公开(公告)号：US10950454B2

    公开(公告)日：2021-03-16

    申请号：US15669871

    申请日：2017-08-04

    Applicant: Lam Research Corporation

    Inventor： Xiang Zhou ,  Tom A. Kamp ,  Yoshie Kimura ,  Duming Zhang ,  Chen Xu ,  John Drewery ,  Alex Paterson

    IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32

    Abstract: A method for etching a substrate includes performing, in a plasma chamber, a first etch of a substrate material using a plasma etch process. The first etch forms features to a first depth in the material. Following the first etch, the method includes performing, in the plasma chamber without removing the substrate from the chamber, an atomic layer passivation (ALP) process to deposit a conformal film of passivation over the mask and the features formed during the first etch. The ALP process uses a vapor from a liquid precursor to form passivation over the features and the mask. The method further includes performing, in the plasma chamber, a second etch of the material using the plasma etch process. The conformal film of passivation is configured to protect the mask and sidewalls of the features during the second etch. A plasma processing system also is described.

    System, method, and user interface for edge ring wear compensation
    10.
    发明授权
    System, method, and user interface for edge ring wear compensation 有权

    公开(公告)号：US12237203B2

    公开(公告)日：2025-02-25

    申请号：US17991193

    申请日：2022-11-21

    Applicant: Lam Research Corporation

    Inventor： Tom A. Kamp ,  Carlos Leal-Verdugo

    IPC: H01L21/687 ,  H01L21/67

    Abstract: A method for adjusting a height of an edge ring arranged around an outer portion of a substrate support includes receiving at least one input indicative of one or more erosion rates of the edge ring. The at least one input includes a plurality of erosion rates for respective usage periods of a substrate processing system. The method further includes determining at least one erosion rate of the edge ring using the plurality of erosion rates for the respective usage periods, monitoring an overall usage of the edge ring and storing the overall usage of the edge ring in a memory, calculating an amount of erosion of the edge ring based on the determined at least one erosion rate and the overall usage of the edge ring, and adjusting the height of the edge ring based on the calculated amount of erosion to compensate for the calculated amount of erosion.

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