EDGE RING FOCUSED DEPOSITION DURING A CLEANING PROCESS OF A PROCESSING CHAMBER

    公开(公告)号:US20190341275A1

    公开(公告)日:2019-11-07

    申请号:US15972927

    申请日:2018-05-07

    Abstract: A method for performing a cleaning process in a processing chamber includes, without a substrate arranged on a substrate support of the processing chamber, supplying reactant gases in a side gas flow via side tuning holes of a gas distribution device to effect deposition of a coating on an edge ring of the substrate support. The side gas flow targets an outer region of the processing chamber above the edge ring, and the reactant gases are supplied at a first flow rate. The method further includes, while supplying the reactant gases via the side tuning holes, supplying inert gases in a center gas flow via center holes of the gas distribution device. The inert gases are supplied at a second flow rate that is greater than the first flow rate.

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