AUTOMATED PROCESS MODULE RING POSITIONING AND REPLACEMENT

    公开(公告)号:US20220122878A1

    公开(公告)日:2022-04-21

    申请号:US17605545

    申请日:2020-04-22

    摘要: A lift pin mechanism employed within a process module includes a plurality of lift pins distributed uniformly along a circumference of a lower electrode defined in the process module. Each lift pin includes a top member that is separated from a bottom member by a collar defined by a chamfer. A sleeve is defined in a housing within a body of the lower electrode on which a substrate is received for processing. The housing is disposed below a mid ring that is defined in the lower electrode. The collar of the lift pin is used to engage with a bottom side of the sleeve, and a top side of the sleeve is configured to engage with the mid ring, when the lift pins are activated. An actuator coupled to each of the plurality of lift pins and an actuator drive connected to the actuators is used to drive the plurality of lift pins. A controller is coupled to the actuator drive to control movement of the plurality of lift pins.

    Electrostatic chuck including declamping electrode and method of declamping
    8.
    发明授权
    Electrostatic chuck including declamping electrode and method of declamping 有权
    静电吸盘,包括电极和放电方法

    公开(公告)号:US09101038B2

    公开(公告)日:2015-08-04

    申请号:US14136826

    申请日:2013-12-20

    IPC分类号: H01L21/683 H01T23/00 H05F3/02

    CPC分类号: H01L21/6833

    摘要: A semiconductor wafer processing apparatus for processing semiconductor wafers comprises a semiconductor wafer processing chamber in which a semiconductor wafer is processed, a process gas source in fluid communication with the processing chamber adapted to supply process gas into the processing chamber, a vacuum source adapted to exhaust process gas and byproducts of the processing from the processing chamber, and an electrostatic chuck assembly. The electrostatic chuck assembly comprises a support surface in a layer of ceramic material on which the semiconductor wafer is supported during processing of the wafer in the chamber, at least one electrostatic clamping electrode embedded in the layer of ceramic material, the at least one electrostatic clamping electrode operable to apply an electrostatic clamping force to the wafer on the support surface when an electrostatic clamping voltage is applied to the clamping electrode, and at least one declamping electrode embedded in the layer of ceramic material above the at least one electrostatic clamping electrode operable to provide a path for draining any residual charge between the wafer and the support surface when the electrostatic clamping voltage is no longer applied to the clamping electrode.

    摘要翻译: 一种用于处理半导体晶片的半导体晶片处理装置,包括处理半导体晶片的半导体晶片处理室,与处理室流体连通的处理气体源,其适于将处理气体供应到处理室中,适于排出的真空源 来自处理室的处理气体和副产物以及静电吸盘组件。 静电卡盘组件包括在陶瓷材料层中的支撑表面,其中半导体晶片在腔室中的晶片处理期间被支撑,至少一个静电夹持电极嵌入在陶瓷材料层中,该至少一个静电夹持 电极,其可操作以当静电钳位电压施加到所述夹持电极时将静电夹持力施加到所述支撑表面上的所述晶片;以及至少一个在所述至少一个静电夹持电极上方的陶瓷材料层中的所述电极, 当静电钳位电压不再施加到夹紧电极时,提供用于在晶片和支撑表面之间排出任何残留电荷的路径。