公开(公告)号：US20160063924A1

公开(公告)日：2016-03-03

申请号：US14838659

申请日：2015-08-28

Applicant: LG Display Co., Ltd.

Inventor： Saeroonter OH ,  Jungsun BEAK ,  Seungmin LEE ,  Juheyuck BAECK ,  Hyunsoo SHIN ,  Jeyong JEON ,  Dohyung LEE

IPC: G09G3/32 ,  H01L27/32 ,  H01L27/12

CPC classification number: H01L27/3262 ,  G09G3/3208 ,  G09G2310/0297 ,  G09G2320/0247 ,  G09G2330/021 ,  G09G2340/0435 ,  H01L27/1225 ,  H01L27/1229 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/322 ,  H01L27/3276 ,  H01L51/5209 ,  H01L51/5225 ,  H01L2227/323

Abstract: The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate and a display using the same. A disclosed display device may include a substrate, a first thin film transistor including a first semiconductor layer having a polycrystalline semiconductor material on the substrate, and a second thin film transistor including a second semiconductor layer including an oxide semiconductor material on the substrate. Both the first semiconductor layer and the second semiconductor layer may be disposed directly on a same underlying layer.

Abstract translation: 本公开涉及在相同基板上具有两种不同类型的薄膜晶体管的薄膜晶体管基板和使用其的显示器。 所公开的显示装置可以包括基板，包括在基板上具有多晶半导体材料的第一半导体层的第一薄膜晶体管，以及包括在基板上包括氧化物半导体材料的第二半导体层的第二薄膜晶体管。 第一半导体层和第二半导体层都可以直接设置在相同的下层上。

公开(公告)号：US20250048739A1

公开(公告)日：2025-02-06

申请号：US18783662

申请日：2024-07-25

Applicant: LG DISPLAY CO., LTD.

Inventor： ChanYong JEONG ,  JuHeyuck BAECK ,  Dohyung LEE ,  Younghyun KO ,  HongRak CHOI ,  Dohyun KWAK

IPC: H01L27/12 ,  H01L25/16

Abstract: A thin film transistor substrate includes a thin film transistor, on a substrate, including an active layer; a conductive material layer; and a gate electrode spaced apart and partially overlapping the active layer. The active layer includes a channel area partially overlapping the gate electrode, and a source area and a drain area connected to respective sides of the channel area. The conductive material layer includes a first and second conductive material layer respectively on the source drain areas. The first conductive material layer overlaps at least a portion of the channel area. The active layer includes an active hole in which the active layer is absent within an area defined by the active layer, and, in a plan view, the active hole extends from the channel area to the drain area.

公开(公告)号：US20250031410A1

公开(公告)日：2025-01-23

申请号：US18763082

申请日：2024-07-03

Applicant: LG Display Co., Ltd.

Inventor： Dohyung LEE ,  HongRak CHOI ,  Dohyun KWAK ,  JuHeyuck BAECK

IPC: H01L29/786 ,  H01L29/66 ,  H10K59/121 ,  H10K59/126

Abstract: A thin film transistor, and a method for manufacturing the same and a display apparatus comprising the same are provided. The thin film transistor includes a light shielding layer, an active layer on the light shielding layer, a gate electrode spaced apart from the active layer and overlapping at least a portion of the active layer, and an internal bridge electrically connecting the light shielding layer and the gate electrode being insulated from the active layer. The internal bridge overlaps the gate electrode and penetrates the active layer along a direction from the gate electrode to the light shielding layer. In addition, one embodiment of the present disclosure provides a display apparatus including the thin film transistor.

公开(公告)号：US20240222380A1

公开(公告)日：2024-07-04

申请号：US18384766

申请日：2023-10-27

Applicant: LG DISPLAY CO., LTD.

Inventor： JuHeyuck BAECK ,  Dohyung LEE

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/127 ,  H10K59/1213

Abstract: A thin film transistor substrate includes a substrate; and a gate electrode and an active layer spaced up and down on the substrate, wherein the active layer includes a first active layer and a second active layer, the first active layer is disposed closer to the gate electrode than the second active layer, a gate insulating film is additionally disposed between the first active layer and the gate electrode, the first active layer and the gate insulating film are in contact with each other, and, the first active layer includes a crystalline oxide semiconductor material, and the second active layer includes an amorphous oxide semiconductor material.

公开(公告)号：US20240162239A1

公开(公告)日：2024-05-16

申请号：US18381525

申请日：2023-10-18

Applicant: LG Display Co., Ltd.

Inventor： Dohyung LEE ,  ChanYong JEONG ,  JuHeyuck BAECK ,  Younghyun KO ,  HongRak CHOI

IPC: H01L27/12 ,  H01L21/02

CPC classification number: H01L27/124 ,  H01L21/02414 ,  H01L27/1218 ,  H01L27/1225 ,  H10K59/1213

Abstract: Discussed are a display panel and a display device including thin film transistors having high reliability and a high current producing characteristic. In one example, the display panel includes a first active layer disposed on a substrate and including a first channel region, a second active layer overlapping a portion of the first active layer and including a second channel region not overlapping the first channel region of the first active layer, first and second electrodes disposed in respective portions of the first and second active layers, respectively, and spaced apart from each other, a gate insulating layer disposed in respective portions of upper surfaces of the first and second active layers, and a third electrode disposed on the gate insulating layer.

公开(公告)号：US20240099063A1

公开(公告)日：2024-03-21

申请号：US18241283

申请日：2023-09-01

Applicant: LG DISPLAY CO., LTD.

Inventor： Dohyung LEE ,  JuHeyuck BAECK ,  Jiyong NOH ,  HongRak CHOI ,  ChanYong JEONG

IPC: H10K59/121 ,  H10K59/126 ,  H10K71/00

CPC classification number: H10K59/1213 ,  H10K59/1216 ,  H10K59/126 ,  H10K71/861 ,  H10K2102/351

Abstract: A display panel and a display device both include a first active layer disposed on a substrate and including a channel area, a first area positioned on a first side of the channel area, and a second area positioned on a second side of the channel area, a first conductor on the first area, a second conductor on the second area, and a first auxiliary electrode on the first conductor, wherein an area where the first auxiliary electrode is disposed includes a repair area, thereby facilitating to repair a subpixel while mitigating or minimizing instantaneous ghosting on panel.

公开(公告)号：US20230307548A1

公开(公告)日：2023-09-28

申请号：US18204224

申请日：2023-05-31

Applicant: LG DISPLAY CO., LTD.

Inventor： JuHeyuck BAECK ,  Dohyung LEE ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/78603 ,  H01L29/78696 ,  H01L29/78633 ,  H10K59/126

Abstract: A thin film transistor is disclosed. The thin film transistor comprises an active layer, and a gate electrode overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, and the channel portion includes a source boundary portion, a drain boundary portion, and a main channel portion, wherein at least a part of the drain boundary portion have a relatively smaller thickness in comparison to a thickness of the main channel portion. Also, according to one embodiment of the present disclosure, a display apparatus comprising the thin film transistor is provided.

公开(公告)号：US20230110764A1

公开(公告)日：2023-04-13

申请号：US17962783

申请日：2022-10-10

Applicant: LG Display Co., Ltd.

Inventor： ChanYong JEONG ,  KyungChul OK ,  Dohyung LEE ,  HongRak CHOI

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/66 ,  H01L27/32

Abstract: A thin film transistor, a fabricating method of the thin film transistor and a display device including the thin film transistor are provided, in which the thin film transistor includes a reducing pattern on a substrate, an active layer that is in contact with the reducing pattern, and a gate electrode at least partially overlapped with the active layer, wherein the active layer includes a channel portion, a first conductorization portion connected to one side of the channel portion, and a second conductorization portion connected to the other side of the channel portion, and the channel portion overlaps the gate electrode and does not overlap the reducing pattern.

公开(公告)号：US20160064465A1

公开(公告)日：2016-03-03

申请号：US14838631

申请日：2015-08-28

Applicant: LG Display Co., Ltd.

Inventor： Saeroonter OH ,  Seungmin LEE ,  Juheyuck BAECK ,  Hoiyong KWON ,  Jeyong JEON ,  Dohyung LEE

IPC: H01L27/32 ,  H01L27/12 ,  G09G3/32 ,  H01L29/786

CPC classification number: H01L27/3262 ,  G09G2300/0426 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1251 ,  H01L29/78675 ,  H01L29/7869

Abstract: The present invention relates to a thin film transistor substrate having two different types of semiconductor materials on the same substrate, and a display using the same. A disclosed display may include a substrate, a first thin film transistor having a polycrystalline semiconductor material on the substrate and a second thin film transistor having an oxide semiconductor material on the substrate.

Abstract translation: 本发明涉及在相同基板上具有两种不同类型的半导体材料的薄膜晶体管基板和使用其的显示器。 所公开的显示器可以包括衬底，在衬底上具有多晶半导体材料的第一薄膜晶体管和在衬底上具有氧化物半导体材料的第二薄膜晶体管。

公开(公告)号：US20230014588A1

公开(公告)日：2023-01-19

申请号：US17950024

申请日：2022-09-21

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck BAECK ,  Dohyung LEE ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L27/32

Abstract: Provided are a thin film transistor array substrate and an electronic device including the same. More specifically, the thin film transistor array includes a first active layer including a first area, a second area spaced apart from the first area, and a channel area provided between the first area and the second area, a first gate electrode disposed on the first active layer, and a second gate electrode disposed on the same layer as the first gate electrode to overlap one end of the first gate electrode and to which a signal corresponding to a signal applied to the first gate electrode is applied. Therefore, it is possible to have a structure for simultaneously controlling the threshold voltage, mobility, and subthreshold (S) parameter of a thin film transistor.