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    ARRAY SUBSTRATE AND DISPLAY DEVICE INCLUDING THEREOF
    11.
    发明公开
    ARRAY SUBSTRATE AND DISPLAY DEVICE INCLUDING THEREOF 审中-公开

    公开(公告)号：US20230155030A1

    公开(公告)日：2023-05-18

    申请号：US17977978

    申请日：2022-10-31

    Applicant: LG Display Co., Ltd.

    Inventor： Deuk-Ho Yeon ,  Kum-Mi Oh ,  Sun-Wook Ko

    IPC: H01L29/786 ,  H01L27/15

    CPC classification number: H01L29/78633 ,  H01L27/156 ,  H01L29/78675

    Abstract: The present disclosure discloses an array substrate and a display device including thereof. The array substrate includes a substrate, a shield metal over the substrate and a thin film transistor including an active layer with a channel region over the shield metal and a thermal gradient portion in at least one of the shield metal, the active layer and the array substrate so as to lower a temperature of a first area of the channel region than a temperature of a second area of the channel region. A cooling zone between the channel region and the shield metal is defined by the thermal gradient portion. The array substrate and a display device including the array substrate including the thermal gradient portion that defines the cooling zone between the thin film transistor and the shield metal can improves Kink effect, maintain high driving voltage, increase on current and/or improve switching properties.

    TFT substrate and light emitting display device including the same
    17.
    发明授权
    TFT substrate and light emitting display device including the same 有权

    公开(公告)号：US11245041B2

    公开(公告)日：2022-02-08

    申请号：US16555753

    申请日：2019-08-29

    Applicant: LG Display Co., Ltd.

    Inventor： Kum-Mi Oh

    IPC: H01L29/786 ,  H01L29/417 ,  H01L27/32 ,  H01L29/423 ,  H01L27/12

    Abstract: A thin film transistor (TFT) substrate comprises a TFT located on a substrate and including a gate electrode, a first semiconductor layer and a second semiconductor layer, wherein the first semiconductor layer, the gate electrode and the second semiconductor layer vertically stacked, and the first and second semiconductor layers are made of polycrystalline silicon, and wherein the first and second semiconductor layers are electrically connected to each other in series and respectively include first and second channel portions, and at least one of the first and second channel portions has a bent structure in a plan view.

    Driving thin-film transistor and organic light-emitting display device using the same
    18.
    发明授权
    Driving thin-film transistor and organic light-emitting display device using the same 有权

    公开(公告)号：US10256429B2

    公开(公告)日：2019-04-09

    申请号：US15859017

    申请日：2017-12-29

    Applicant: LG DISPLAY CO., LTD.

    Inventor： In-Sang Jung ,  Kum-Mi Oh ,  Won-Sang Ryu ,  Sun-Wook Ko

    IPC: H01L27/32 ,  H01L51/52 ,  G09G3/3225 ,  H01L29/786

    Abstract: A driving thin-film transistor can include a substrate; a first active layer disposed on the substrate and including a first protruding portion; a second active layer overlapping with the first active layer and including a second protruding portion; a gate electrode disposed between the first active layer and the second active layer; a source electrode connected to the first protruding portion of the first active layer; and a drain electrode connected to the second protruding portion of the second active layer, in which the first protruding portion of the first active layer and the second protruding portion of the second active layer are located at different positions.

    Backplane substrate and organic light emitting diode display using the same
    19.
    发明授权
    Backplane substrate and organic light emitting diode display using the same 有权

    公开(公告)号：US10084030B2

    公开(公告)日：2018-09-25

    申请号：US15581763

    申请日：2017-04-28

    Applicant: LG Display Co., Ltd.

    Inventor： Kum-Mi Oh ,  Hye-Seon Eom

    IPC: H01L27/32 ,  H01L49/02

    CPC classification number: H01L27/3265 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L28/60

    Abstract: Disclosed are a backplane substrate which secures sufficient storage capacitance even when using small sub-pixels in a structure having very high resolution, and an organic light emitting diode display using the same. The backplane substrate includes storage capacitors including a first storage electrode, a second storage electrode partially overlapping the first storage electrode, a second storage connection electrode overlapping the first and second storage electrodes and connected to the second storage electrode at a first node, and a first storage connection electrode overlapping the second storage connection electrode and connected to the first storage electrode at a second node at which the first and second storage electrodes do not overlap each other, in a storage capacitor region defined by intersecting a scan line, a first voltage line and a data line at each sub-pixel.

    Organic light emitting display and method of fabricating the same
    20.
    发明授权
    Organic light emitting display and method of fabricating the same 有权
    有机发光显示器及其制造方法

    公开(公告)号：US09520455B2

    公开(公告)日：2016-12-13

    申请号：US14792117

    申请日：2015-07-06

    Applicant: LG Display Co., Ltd.

    Inventor： Kum-Mi Oh ,  Kyung-Mo Son ,  Sung-Hoon Kim

    IPC: H01L27/32 ,  H01L51/05

    CPC classification number: H01L27/3262 ,  H01L51/0562 ,  H01L2227/323

    Abstract: A subpixel structure for a display device and a method of fabricating the display device are discussed. The subpixel structure can include a light emitting diode, a first switching transistor having a first gate electrode and a first active layer, a driving transistor having a second gate electrode and a second active layer, a second switching transistor including a third gate electrode and a third active layer, and at least one of the first, second and third gate electrodes is disposed between the corresponding first, second and third active layers and a substrate.

    Abstract translation: 讨论了用于显示装置的子像素结构和制造显示装置的方法。 子像素结构可以包括发光二极管，具有第一栅电极和第一有源层的第一开关晶体管，具有第二栅电极和第二有源层的驱动晶体管，包括第三栅电极和第二栅电极的第二开关晶体管 第三有源层，并且第一，第二和第三栅电极中的至少一个设置在对应的第一，第二和第三有源层与衬底之间。

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