公开(公告)号：US20230111218A1

公开(公告)日：2023-04-13

申请号：US17963101

申请日：2022-10-10

Applicant: LG Display Co., Ltd.

Inventor： Min-Gu KANG ,  Younghyun KO ,  SeungChan CHOI ,  Jaeman JANG

IPC: H01L29/786 ,  H01L27/32 ,  H01L27/12

Abstract: A thin film transistor and a display device comprising the same are provided. The thin film transistor comprises an active layer, and a gate electrode at least partially overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion, the channel portion includes a first channel area and a second channel area, each of the first channel area and the second channel area is extended from the first connection portion to the second connection portion, and a length of the first channel area is shorter than that of the second channel area.

公开(公告)号：US20220399464A1

公开(公告)日：2022-12-15

申请号：US17751975

申请日：2022-05-24

Applicant: LG DISPLAY CO., LTD.

Inventor： Younghyun KO ,  SeungChan CHOI ,  Min-Gu KANG ,  Jaeman JANG

IPC: H01L29/786 ,  H01L27/32

Abstract: A thin film transistor substrate is provided, which comprises a substrate, a first thin film transistor on the substrate, and a second thin film transistor on the substrate, wherein the first thin film transistor includes a first active layer having a first channel portion, a first gate insulating layer on the first active layer, a first gate electrode on the first gate insulating layer, a first source electrode connected to the first active layer, and a first drain electrode spaced apart from the first source electrode and connected to the first active layer, the second thin film transistor includes a conductive material layer on the substrate, a first buffer layer on the conductive material layer, a second active layer having a second channel portion on the first buffer layer, a second gate insulating layer on the second active layer, a second gate electrode on the second gate insulating layer, a second source electrode connected to the second active layer, and a second drain electrode spaced apart from the second source electrode and connected to the second active layer, and the conductive material layer is connected to the second source electrode and overlaps the second channel portion. Also, a display device comprising the thin film transistor substrate is provided.

公开(公告)号：US20210202755A1

公开(公告)日：2021-07-01

申请号：US17124344

申请日：2020-12-16

Applicant: LG Display Co., Ltd.

Inventor： KyungChul OK ,  JungSeok SEO ,  PilSang YUN ,  Jiyong NOH ,  Jaeman JANG ,  InTak CHO

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/32

Abstract: Disclosed is a thin film transistor, a method for manufacturing the same and a display apparatus comprising the same, wherein the thin film transistor includes a first insulating layer on a substrate, an active layer on the first insulating layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer has a single crystal structure of an oxide semiconductor material, and an upper surface of the first insulating layer which contacts the active layer is an oxygen (O) layer made of oxygen (O).

公开(公告)号：US20210193804A1

公开(公告)日：2021-06-24

申请号：US17131284

申请日：2020-12-22

Applicant: LG Display Co., Ltd.

Inventor： InTak CHO ,  Jiyong NOH ,  Jaeman JANG ,  PilSang YUN ,  Jeyong JEON

IPC: H01L29/40 ,  G09G3/32 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L21/765 ,  H01L29/66

Abstract: A thin film transistor, a display panel comprising the same and a display apparatus are discussed. The thin film transistor comprises a buffer layer embodied on a substrate, a semiconductor layer embodied on the buffer layer, including a channel area, a first conductor portion and a second conductor portion, a gate insulating film embodied on the semiconductor layer, a gate electrode embodied on the gate insulating film, and an auxiliary electrode overlapped with the second conductor portion, wherein the first conductor portion is extended from one side of the channel area, and becomes a source area, and the second conductor portion is extended from the other side of the channel area, and becomes a drain area.