公开(公告)号：US20210183898A1

公开(公告)日：2021-06-17

申请号：US17113845

申请日：2020-12-07

Applicant: LG Display Co., Ltd.

Inventor： ChanYong JEONG ,  Dohyung LEE ,  JuHeyuck BAECK

IPC: H01L27/12

Abstract: Provided are a transistor array substrate and an electronic device. A first active layer includes a first area, a second area spaced apart from the first area, and a channel area provided between the first area and the second area. A gate insulating film is disposed on the first active layer. A gate electrode is disposed on the gate insulating film to overlap a portion of the channel area of the first active layer. The gate electrode overlaps a portion of at least one area of the first and second areas of the first active layer. Deteriorations in the channel area are prevented.

公开(公告)号：US20200176603A1

公开(公告)日：2020-06-04

申请号：US16502312

申请日：2019-07-03

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck BAECK ,  Dohyung LEE ,  ChanYong JEONG

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L27/32

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a semiconductor layer including: a first oxide semiconductor layer including gallium (Ga), a second oxide semiconductor layer, and a silicon semiconductor layer between the first oxide semiconductor layer and the second oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping at least a part of the semiconductor layer.

公开(公告)号：US20190181274A1

公开(公告)日：2019-06-13

申请号：US16211151

申请日：2018-12-05

Applicant: LG Display Co., Ltd.

Inventor： Jiyong NOH ,  Jaeman JANG ,  JuHeyuck BAECK ,  PilSang YUN

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66

Abstract: A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer on a substrate, a gate electrode insulated from the oxide semiconductor layer to overlap at least a portion of the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode spaced apart from the source electrode and connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first oxide semiconductor layer on the substrate and a second oxide semiconductor layer on the first oxide semiconductor layer, the first oxide semiconductor layer includes nitrogen of 1 at % to 5 at % concentration with respect to number of atoms, and the second oxide semiconductor layer has a nitrogen concentration which is lower than a nitrogen concentration of the first oxide semiconductor layer and a gradient of the nitrogen concentration such that the nitrogen concentration is lowered in a direction closer to the gate electrode.

公开(公告)号：US20180190822A1

公开(公告)日：2018-07-05

申请号：US15839611

申请日：2017-12-12

Applicant: LG Display Co., Ltd. ,  Hangyang University Industry-University Cooperation Foundation

Inventor： Jin Seong PARK ,  Kyung Chul OCK ,  Ki Lim HAN ,  JongUk BAE ,  SeungMin LEE ,  JuHeyuck BAECK

IPC: H01L29/786 ,  H01L27/32 ,  H01L29/66 ,  H01L27/12 ,  G02F1/1368

Abstract: Disclosed is a thin film transistor substrate that may include a base substrate, a first protection film disposed on the base substrate, an oxide semiconductor layer disposed on the first protection film, a gate electrode insulated from the oxide semiconductor layer and partially overlapped with at least one portion of the oxide semiconductor layer, a source electrode connected with the oxide semiconductor layer, and a drain electrode provided at a predetermined interval from the source electrode and connected with the oxide semiconductor layer, wherein the oxide semiconductor layer has a hydrogen content of 2.4 at % (atomic % or atom %)˜2.6 at %.

公开(公告)号：US20250063890A1

公开(公告)日：2025-02-20

申请号：US18798111

申请日：2024-08-08

Applicant: LG Display Co., Ltd.

Inventor： Younghyun KO ,  JuHeyuck BAECK ,  ChanYong JEONG

IPC: H10K59/121 ,  H10K59/126

Abstract: A thin film transistor substrate includes a substrate; an active layer on the substrate and including an active hole; and a gate electrode on the active layer. The active layer includes a channel part including a first channel part having a first length and a second channel part continuous with the first channel part and having a second length. The active hole includes a first active hole at a boundary portion between the first channel part and the second channel part.

公开(公告)号：US20250048739A1

公开(公告)日：2025-02-06

申请号：US18783662

申请日：2024-07-25

Applicant: LG DISPLAY CO., LTD.

Inventor： ChanYong JEONG ,  JuHeyuck BAECK ,  Dohyung LEE ,  Younghyun KO ,  HongRak CHOI ,  Dohyun KWAK

IPC: H01L27/12 ,  H01L25/16

Abstract: A thin film transistor substrate includes a thin film transistor, on a substrate, including an active layer; a conductive material layer; and a gate electrode spaced apart and partially overlapping the active layer. The active layer includes a channel area partially overlapping the gate electrode, and a source area and a drain area connected to respective sides of the channel area. The conductive material layer includes a first and second conductive material layer respectively on the source drain areas. The first conductive material layer overlaps at least a portion of the channel area. The active layer includes an active hole in which the active layer is absent within an area defined by the active layer, and, in a plan view, the active hole extends from the channel area to the drain area.

公开(公告)号：US20250031410A1

公开(公告)日：2025-01-23

申请号：US18763082

申请日：2024-07-03

Applicant: LG Display Co., Ltd.

Inventor： Dohyung LEE ,  HongRak CHOI ,  Dohyun KWAK ,  JuHeyuck BAECK

IPC: H01L29/786 ,  H01L29/66 ,  H10K59/121 ,  H10K59/126

Abstract: A thin film transistor, and a method for manufacturing the same and a display apparatus comprising the same are provided. The thin film transistor includes a light shielding layer, an active layer on the light shielding layer, a gate electrode spaced apart from the active layer and overlapping at least a portion of the active layer, and an internal bridge electrically connecting the light shielding layer and the gate electrode being insulated from the active layer. The internal bridge overlaps the gate electrode and penetrates the active layer along a direction from the gate electrode to the light shielding layer. In addition, one embodiment of the present disclosure provides a display apparatus including the thin film transistor.

公开(公告)号：US20240222380A1

公开(公告)日：2024-07-04

申请号：US18384766

申请日：2023-10-27

Applicant: LG DISPLAY CO., LTD.

Inventor： JuHeyuck BAECK ,  Dohyung LEE

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/127 ,  H10K59/1213

Abstract: A thin film transistor substrate includes a substrate; and a gate electrode and an active layer spaced up and down on the substrate, wherein the active layer includes a first active layer and a second active layer, the first active layer is disposed closer to the gate electrode than the second active layer, a gate insulating film is additionally disposed between the first active layer and the gate electrode, the first active layer and the gate insulating film are in contact with each other, and, the first active layer includes a crystalline oxide semiconductor material, and the second active layer includes an amorphous oxide semiconductor material.

公开(公告)号：US20240162239A1

公开(公告)日：2024-05-16

申请号：US18381525

申请日：2023-10-18

Applicant: LG Display Co., Ltd.

Inventor： Dohyung LEE ,  ChanYong JEONG ,  JuHeyuck BAECK ,  Younghyun KO ,  HongRak CHOI

IPC: H01L27/12 ,  H01L21/02

CPC classification number: H01L27/124 ,  H01L21/02414 ,  H01L27/1218 ,  H01L27/1225 ,  H10K59/1213

Abstract: Discussed are a display panel and a display device including thin film transistors having high reliability and a high current producing characteristic. In one example, the display panel includes a first active layer disposed on a substrate and including a first channel region, a second active layer overlapping a portion of the first active layer and including a second channel region not overlapping the first channel region of the first active layer, first and second electrodes disposed in respective portions of the first and second active layers, respectively, and spaced apart from each other, a gate insulating layer disposed in respective portions of upper surfaces of the first and second active layers, and a third electrode disposed on the gate insulating layer.

公开(公告)号：US20240099063A1

公开(公告)日：2024-03-21

申请号：US18241283

申请日：2023-09-01

Applicant: LG DISPLAY CO., LTD.

Inventor： Dohyung LEE ,  JuHeyuck BAECK ,  Jiyong NOH ,  HongRak CHOI ,  ChanYong JEONG

IPC: H10K59/121 ,  H10K59/126 ,  H10K71/00

CPC classification number: H10K59/1213 ,  H10K59/1216 ,  H10K59/126 ,  H10K71/861 ,  H10K2102/351

Abstract: A display panel and a display device both include a first active layer disposed on a substrate and including a channel area, a first area positioned on a first side of the channel area, and a second area positioned on a second side of the channel area, a first conductor on the first area, a second conductor on the second area, and a first auxiliary electrode on the first conductor, wherein an area where the first auxiliary electrode is disposed includes a repair area, thereby facilitating to repair a subpixel while mitigating or minimizing instantaneous ghosting on panel.