公开(公告)号：US20230215955A1

公开(公告)日：2023-07-06

申请号：US17985634

申请日：2022-11-11

Applicant: LG Display Co., Ltd.

Inventor： Seoyeon IM ,  Sungju CHOI ,  JungSeok SEO ,  Jaeyoon PARK ,  Jinwon JUNG

IPC: H01L29/786 ,  H01L27/32 ,  H01L27/12

CPC classification number: H01L29/78696 ,  H01L29/7869 ,  H01L27/3262 ,  H01L27/1214

Abstract: Embodiments of the disclosure relate to a thin film transistor array substrate and an electronic device including the same. Specifically, there may be provided a thin film transistor array substrate and an electronic device including the same, which may have high current characteristics in a small area, by including a first electrode, a first insulation film including a hole exposing a portion of an upper surface of the first electrode, an active layer contacting a portion of an upper surface of the first insulation film and the portion of the upper surface of the first electrode, a second insulation film disposed on the active layer, a gate electrode disposed on the second insulation film, a third insulation film disposed on the gate electrode, and a second electrode and a third electrode disposed on the third insulation film, spaced apart from each other, and electrically connected with the active layer, wherein the same signal is applied to the second electrode and the third electrode, wherein the active layer includes a first channel area and a second channel area spaced apart from each other, and wherein the first channel area and the second channel area include an area positioned on a side surface of the hole of the first insulation film.

公开(公告)号：US20190123149A1

公开(公告)日：2019-04-25

申请号：US16058156

申请日：2018-08-08

Applicant: LG Display Co., Ltd.

Inventor： HeeSung LEE ,  Seoyeon IM ,  Kwon-Shik PARK ,  SungKi KIM

IPC: H01L29/267 ,  H01L29/786 ,  H01L29/24 ,  H01L29/778 ,  H01L27/12

CPC classification number: H01L29/267 ,  G02F1/133305 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/7781 ,  H01L29/7786 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/7869 ,  H01L51/0097

Abstract: The present disclosure relates to a thin-film transistor including two-dimensional semiconductor and display apparatus including the same. The thin-film transistor includes a gate electrode disposed on a substrate, a semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the semiconductor layer, a source electrode connected to the semiconductor layer, and a drain electrode connected to the semiconductor layer in the state of being spaced apart from the source electrode, wherein the semiconductor layer includes a first layer including an oxide semiconductor and a second layer disposed so as to overlap the first layer in a plane view, the second layer comprising a two-dimensional semiconductor, and an energy band gap of the first layer is larger than an energy band gap of the second layer.

公开(公告)号：US20180350995A1

公开(公告)日：2018-12-06

申请号：US15994765

申请日：2018-05-31

Applicant: LG Display Co., Ltd.

Inventor： SeungJin KIM ,  HeeSung LEE ,  Sohyung LEE ,  MinCheol KIM ,  JeongSuk YANG ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US20180122833A1

公开(公告)日：2018-05-03

申请号：US15798776

申请日：2017-10-31

Applicant: LG Display Co. , Ltd.

Inventor： Sohyung LEE ,  Sungki KIM ,  Youngjin YI ,  Mincheol KIM ,  Jeongsuk YANG ,  Seoyeon IM

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/26 ,  H01L29/24

CPC classification number: H01L27/1225 ,  H01L27/1222 ,  H01L29/24 ,  H01L29/26 ,  H01L29/7869 ,  H01L29/78696

Abstract: The present disclosure relates to a thin film transistor substrate having a bi-layer oxide semiconductor. The present disclosure provides a thin film transistor substrate comprising: a substrate; and an oxide semiconductor layer on the substrate, wherein the oxide semiconductor layer includes: a first oxide semiconductor layer having indium, gallium and zinc; and a second oxide semiconductor layer stacked on the first oxide semiconductor layer having the indium, gallium and zinc, wherein any one layer of the first and the second oxide semiconductor layers has a first composition ratio of the indium, gallium and zinc of 1:1:1; and wherein other layer has a second composition ratio of the indium, gallium and zinc in which the indium ratio is higher than the zinc ratio.