公开(公告)号：US20190088805A1

公开(公告)日：2019-03-21

申请号：US16196742

申请日：2018-11-20

Applicant: LG ELECTRONICS INC.

Inventor： Yoonsil JIN ,  Youngho CHOE

IPC: H01L31/0224 ,  H01L31/0352 ,  H01L31/068 ,  H01L31/18

Abstract: A method for fabricating a solar cell, includes forming an emitter layer by doping a first impurity having a second conductivity type, opposite a first conductivity type, on a front surface of a substrate having the first conductivity type; forming a back surface field by doping a second impurity having the first conductivity type on a rear surface of the substrate; and forming a plurality of front finger lines in contact with the emitter layer and a plurality of rear finger lines in contact with the back surface field, wherein the emitter layer has a selective emitter structure, the back surface field has a selective back surface field structure, and the number of the plurality of rear finger lines positioned on the rear surface of the substrate is different from the number of the plurality of front finger lines positioned on a front surface of the substrate.

公开(公告)号：US20180138348A1

公开(公告)日：2018-05-17

申请号：US15868076

申请日：2018-01-11

Applicant: LG ELECTRONICS INC.

Inventor： Jaewon CHANG ,  Youngho CHOE

IPC: H01L31/068 ,  H01L31/0224 ,  H01L31/0236

CPC classification number: H01L31/0684 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/068 ,  Y02E10/547

Abstract: A bifacial solar cell includes a substrate; a first conductive type region having a conductive type different from a conductive type of the substrate; a first insulating layer formed on the first conductive type region; a plurality of first electrodes contacting the first conductive type region through the first insulating layer and extended in a first direction; a plurality of first current collectors extended in a second direction crossing the first direction, wherein the plurality of first current collectors are electrically and physically connected to the plurality of first electrodes; a second conductive type region having a conductive type the same as the conductive type of the substrate, and having an impurity concentration that is higher than an impurity concentration of the substrate; a second insulating layer formed on the second conductive type region; a plurality of second electrodes contacting the second conductive type region through the second insulating layer and extended in the first direction; and a plurality of second current collectors extended in the second direction.

公开(公告)号：US20170271540A1

公开(公告)日：2017-09-21

申请号：US15615179

申请日：2017-06-06

Applicant: LG ELECTRONICS INC.

Inventor： Jaewon CHANG ,  Youngho CHOE

IPC: H01L31/068 ,  H01L31/0224 ,  H01L31/0236

CPC classification number: H01L31/0684 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/068 ,  Y02E10/547

Abstract: A bifacial solar cell includes a substrate; an emitter portion formed on a first surface of the substrate; a first insulating layer formed on the emitter portion; a plurality of first electrodes contacting the emitter portion through the first insulating layer and extended in a first direction; a plurality of first current collectors extended in a second direction crossing the first direction, wherein the plurality of first current collectors are electrically and physically connected to the plurality of first electrodes; a second insulating layer formed on a second surface of the substrate; a back surface field formed on the second surface of the substrate, and having an impurity concentration that is higher than an impurity concentration of the substrate; a plurality of second electrodes contacting the back surface field through the second insulating layer and extended in the first direction; and a plurality of second current collectors extended in the second direction.

公开(公告)号：US20160087123A1

公开(公告)日：2016-03-24

申请号：US14961362

申请日：2015-12-07

Applicant: LG ELECTRONICS INC.

Inventor： Sunyoung KIM ,  Youngho CHOE

IPC: H01L31/0224 ,  H01L31/0236 ,  H01L31/0216

CPC classification number: H01L31/022458 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/547

Abstract: A solar cell and a method for manufacturing the same are discussed. The solar cell includes a semiconductor substrate, a first doped region of a first conductive type, a second doped region of a second conductive type opposite the first conductive type, a back passivation layer having contact holes exposing a portion of each of the first and second doped regions, a first electrode formed on the first doped region exposed through the contact holes, a second electrode formed on the second doped region exposed through the contact holes, an alignment mark formed at one surface of the semiconductor substrate, and a textured surface that is formed at a light receiving surface of the semiconductor substrate opposite the one surface of the semiconductor substrate in which the first and second doped regions are formed.

Abstract translation: 讨论太阳能电池及其制造方法。 太阳能电池包括半导体衬底，第一导电类型的第一掺杂区域，与第一导电类型相反的第二导电类型的第二掺杂区域，具有暴露第一和第二导电类型中的每一个的接触孔的背面钝化层 掺杂区域，形成在通过接触孔暴露的第一掺杂区域上的第一电极，形成在通过接触孔暴露的第二掺杂区域上的第二电极，形成在半导体衬底的一个表面处的对准标记和纹理表面， 形成在与形成有第一和第二掺杂区域的半导体衬底的一个表面相对的半导体衬底的光接收表面上。

公开(公告)号：US20150255645A1

公开(公告)日：2015-09-10

申请号：US14716619

申请日：2015-05-19

Applicant: LG Electronics Inc.

Inventor： Sunyoung KIM ,  Choul KIM ,  Youngho CHOE ,  Sungeun LEE

IPC: H01L31/0224 ,  H01L31/068 ,  H01L31/0216 ,  H01L31/0352

CPC classification number: H01L31/0682 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell and a method for manufacturing the same are discussed. The solar cell can include a semiconductor layer containing first impurities and having a front surface and a back surface, the front surface being a light incident surface, a first portion on the back surface of the semiconductor layer, the first portion being more heavily doped with second impurities different from the first impurities than the semiconductor layer, and forming a p-n junction with the semiconductor layer, a second portion on the back surface of the semiconductor layer, the second portion being more heavily doped with the first impurities than the semiconductor layer, a third portion on the back surface of the semiconductor layer between the first portion and the second portion, a first electrode on the back surface of the semiconductor layer and connected to the first portion, a second electrode on the back surface of the semiconductor layer and connected to the second portion, and a passivation layer on the back surface of the semiconductor layer and contacting the first portion.

Abstract translation: 讨论太阳能电池及其制造方法。 太阳能电池可以包括含有第一杂质并具有前表面和后表面的半导体层，前表面是光入射表面，半导体层的背表面上的第一部分，第一部分更加重掺杂 与半导体层不同于第一杂质的第二杂质，以及与半导体层形成pn结，在半导体层的背面上形成第二部分，第二部分比半导体层更加重掺杂第一杂质， 在第一部分和第二部分之间的半导体层的背表面上的第三部分，在半导体层的背表面上并连接到第一部分的第一电极，在半导体层的背面上的第二电极和 连接到第二部分，以及在半导体层的背表面上的钝化层，并与f接触 第一部分

公开(公告)号：US20180323328A1

公开(公告)日：2018-11-08

申请号：US16033459

申请日：2018-07-12

Applicant: LG Electronics Inc.

Inventor： Sunyoung KIM ,  Choul KIM ,  Youngho CHOE ,  Sungeun LEE

IPC: H01L31/068 ,  H01L31/0352 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/0682 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell including a semiconductor layer containing first type impurities and having front and back surfaces, a first portion on the back surface of the semiconductor layer, the first portion being doped with second type impurities, a second portion on the back surface of the semiconductor layer, the second portion being more heavily doped with the first type impurities than the semiconductor layer, a third portion on the back surface of the semiconductor layer, the third portion being doped with the first type impurities more heavily than the semiconductor layer and less heavily than the second portion, a passivation layer on the back surface of the semiconductor layer and contacting the first portion, the second portion and the third portion, and having contact holes corresponding to the first portion and the second portion and an anti-reflection layer formed on the front surface of the semiconductor layer.

公开(公告)号：US20160284899A1

公开(公告)日：2016-09-29

申请号：US15174500

申请日：2016-06-06

Applicant: LG ELECTRONICS INC.

Inventor： Sungeun LEE ,  Youngho CHOE

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/068 ,  H01L31/0216 ,  H01L31/0236

CPC classification number: H01L31/022441 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell includes a semiconductor substrate of a first conductive type and includes a first side and a second side, the second side having a textured structure formed on the entire second side; a first doped region of the first conductive type and a second doped region of a second conductive type on the first side; a first passivation layer on the first doped region and the second doped region and exposing a portion of a back surface of each of the first and second doped regions, the first passivation layer being formed of silicon nitride (SiNx), silicon dioxide (SiOx), or a combination thereof; a second passivation layer on the second side; an anti-reflection layer on the second passivation layer; and a first electrode electrically connected to the first doped region and a second electrode electrically connected to the second doped region.

Abstract translation: 太阳能电池包括第一导电类型的半导体衬底，并且包括第一侧和第二侧，第二侧具有形成在整个第二侧上的纹理结构; 第一导电类型的第一掺杂区域和第一导电类型的第二掺杂区域; 在所述第一掺杂区域和所述第二掺杂区域上的第一钝化层，并且暴露所述第一和第二掺杂区域中的每一个的后表面的一部分，所述第一钝化层由氮化硅（SiN x），二氧化硅（SiO x） ，或其组合; 在第二侧上的第二钝化层; 在第二钝化层上的抗反射层; 以及电连接到第一掺杂区的第一电极和与第二掺杂区电连接的第二电极。

公开(公告)号：US20160225935A1

公开(公告)日：2016-08-04

申请号：US15097073

申请日：2016-04-12

Applicant: LG ELECTRONICS INC.

Inventor： Hyunjung PARK ,  Daeyong LEE ,  Youngho CHOE ,  Dongho HAN

IPC: H01L31/18

CPC classification number: H01L31/18 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for manufacturing a solar cell, the method comprising: forming an emitter region that forms a p-n junction with a semiconductor substrate of a first conductive type; forming a passivation layer on the semiconductor substrate; forming a dopant layer containing impurities of the first conductive type on the passivation layer; and locally forming a back surface field region at the semiconductor substrate by irradiating laser beams onto the semiconductor substrate to diffuse the impurities of the first conductive type into the semiconductor substrate.

Abstract translation: 一种制造太阳能电池的方法，所述方法包括：形成与第一导电类型的半导体衬底形成p-n结的发射极区域; 在所述半导体衬底上形成钝化层; 在所述钝化层上形成含有所述第一导电类型的杂质的掺杂剂层; 并且通过将半导体衬底上的激光照射到半导体衬底上来将第一导电类型的杂质扩散到半导体衬底中，在半导体衬底上局部形成背面场区域。

公开(公告)号：US20150372183A1

公开(公告)日：2015-12-24

申请号：US14841159

申请日：2015-08-31

Applicant: LG ELECTRONICS INC.

Inventor： Yoonsil JIN ,  Hyunjung PARK ,  Youngho CHOE ,  Changseo PARK

IPC: H01L31/18 ,  H01L31/0352 ,  H01L31/068

CPC classification number: H01L31/1804 ,  H01L31/022425 ,  H01L31/035272 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell is formed to have a silicon semiconductor substrate of a first conductive type; an emitter layer having a second conductive type opposite the first conductive type and formed on a first surface of the silicon semiconductor substrate; a back surface field layer having the first conductive type and formed on a second surface of the silicon semiconductor substrate opposite to the first surface; and wherein the emitter layer includes at least a first shallow doping area and the back surface field layer includes at least a second shallow doping area, and wherein a thickness of the first shallow doping area of the emitter layer is different from a thickness of the second shallow doping area of the back surface field layer.

Abstract translation: 太阳能电池被形成为具有第一导电类型的硅半导体衬底; 具有与第一导电类型相反并形成在硅半导体衬底的第一表面上的第二导电类型的发射极层; 具有第一导电类型并形成在与第一表面相对的硅半导体衬底的第二表面上的背表面场层; 并且其中所述发射极层包括至少第一浅掺杂区域，并且所述背表面场层包括至少第二浅掺杂区域，并且其中所述发射极层的所述第一浅掺杂区域的厚度不同于所述第二浅掺杂区域的厚度 背面场层的浅掺杂区域。

公开(公告)号：US20150270415A1

公开(公告)日：2015-09-24

申请号：US14729857

申请日：2015-06-03

Applicant: LG ELECTRONICS INC.

Inventor： Yoonsil JIN ,  Goohwan SHIM ,  Youngho CHOE ,  Changseo PARK

IPC: H01L31/0236 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/02366 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A semiconductor device includes a substrate and a first insulating layer. The first insulating layer includes a first lower layer and a first upper layer on the first lower layer. The first insulating layer has a first opening through the first lower layer and the first upper layer. A maximum width of the first opening at the first lower layer is different from a maximum width of the first opening at the first upper layer.

Abstract translation: 半导体器件包括衬底和第一绝缘层。 第一绝缘层包括第一下层和第一下层上的第一上层。 第一绝缘层具有穿过第一下层和第一上层的第一开口。 第一下层的第一开口的最大宽度不同于第一上层的第一开口的最大宽度。