公开(公告)号：US10022689B2

公开(公告)日：2018-07-17

申请号：US14809041

申请日：2015-07-24

Applicant: Lam Research Corporation

Inventor： Iqbal A. Shareef ,  Mark Taskar

IPC: B01F15/02 ,  B01F3/02 ,  B01F13/10

Abstract: A mixing hub for use in semiconductor processing tools is provided. The hub may include a plurality of ports arranged about an axis, a mixing chamber, and a plurality of flow paths. Each of the flow paths may fluidically connect a corresponding one of the ports to the mixing chamber and each flow path may include a first passage, a second passage, and a valve interface. Each valve interface may be configured to interface with a valve such that the valve, when installed in the valve interface, is able to regulate fluid flow between the first passage and the second passage. Each valve interface may be located between a first reference plane that is perpendicular to the axis and passes through the corresponding port and a second reference plane that is perpendicular to the axis and passes through the mixing chamber.

公开(公告)号：US20170021317A1

公开(公告)日：2017-01-26

申请号：US14809041

申请日：2015-07-24

Applicant: Lam Research Corporation

Inventor： Iqbal A. Shareef ,  Mark Taskar

IPC: B01F15/02 ,  B01F3/02

CPC classification number: B01F15/0226 ,  B01F3/02 ,  B01F13/1058 ,  B01F15/0222 ,  B01F2215/0096

Abstract: A mixing hub for use in semiconductor processing tools is provided. The hub may include a plurality of ports arranged about an axis, a mixing chamber, and a plurality of flow paths. Each of the flow paths may fluidically connect a corresponding one of the ports to the mixing chamber and each flow path may include a first passage, a second passage, and a valve interface. Each valve interface may be configured to interface with a valve such that the valve, when installed in the valve interface, is able to regulate fluid flow between the first passage and the second passage. Each valve interface may be located between a first reference plane that is perpendicular to the axis and passes through the corresponding port and a second reference plane that is perpendicular to the axis and passes through the mixing chamber.

Abstract translation: 提供了一种用于半导体加工工具的搅拌轮毂。 轮毂可包括围绕轴线布置的多个端口，混合室和多个流动路径。 每个流动路径可以将相应的一个端口流体连接到混合室，并且每个流动路径可以包括第一通道，第二通道和阀接口。 每个阀接口可被配置为与阀接口，使得当安装在阀接口中时，阀能够调节第一通道和第二通道之间的流体流动。 每个阀接口可以位于垂直于轴线并穿过对应端口的第一参考平面和垂直于轴线并通过混合室的第二参考平面之间。

公开(公告)号：US20150068613A1

公开(公告)日：2015-03-12

申请号：US14025162

申请日：2013-09-12

Applicant: Lam Research Corporation

Inventor： Mark Taskar ,  Iqbal Shareef

IPC: G05D11/13 ,  G05D7/06

CPC classification number: G05D7/0641 ,  F16K27/003 ,  G05D7/0652 ,  Y10T137/2499

Abstract: A multi-line mass flow device configured for controlled delivery of two or more fluids into a process chamber. The multi-line mass flow device comprises a cluster mass flow control manifold and a multi-inlet manifold. The cluster mass flow control manifold comprises a controller, a gas manifold mounting block, and two or more gas flow control stations. The multi-inlet manifold comprises a multi-inlet mounting block, and two or more isolation valves mounted on the multi-inlet mounting block.

Abstract translation: 多线质量流量装置，被配置为将两种或多种流体控制输送到处理室中。 多线质量流量装置包括集束质量流量控制歧管和多入口歧管。 集群质量流量控制歧管包括控制器，气体歧管安装块和两个或更多个气体流量控制站。 多入口歧管包括多入口安装块和安装在多入口安装块上的两个或更多隔离阀。

公开(公告)号：US20140182689A1

公开(公告)日：2014-07-03

申请号：US13732054

申请日：2012-12-31

Applicant: LAM RESEARCH CORPORATION

Inventor： Iqbal Shareef ,  Mark Taskar ,  Evangelos Spyropoulos

IPC: H01L21/67

CPC classification number: H01J37/32449 ,  C23C16/45561 ,  C23C16/513 ,  G05D7/06 ,  G05D7/0658 ,  G05D11/132 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/67069 ,  Y10T137/0324 ,  Y10T137/7722

Abstract: A gas supply subsystem for providing a set of process gases to a substrate processing chamber, the set of process gases being a subset of a plurality of process gases available to the substrate processing chamber. The gas supply subsystem has fewer multi-gas mass flow controllers than the number of available process gases, wherein multiple process gases are multiplexed at the input of one or more of the multi-gas mass flow controllers. Pump-purge may be employed to improve gas switching speed for the multi-gas mass flow controllers

Abstract translation: 一种用于向衬底处理室提供一组工艺气体的气体供应子系统，该组工艺气体是可用于衬底处理室的多个工艺气体的子集。 气体供应子系统具有比可用的工艺气体的数量少的多气体质量流量控制器，其中多个处理气体在多个气体质量流量控制器的一个或多个的输入处被多路复用。 可以采用泵清洗来提高多气体质量流量控制器的气体切换速度

公开(公告)号：US20210183626A1

公开(公告)日：2021-06-17

申请号：US17165923

申请日：2021-02-02

Applicant: Lam Research Corporation

Inventor： Mark Taskar ,  Iqbal A. Shareef

IPC: H01J37/32

Abstract: In some examples, a gas mixer comprises a body and an orbital array of gas inlets for receiving one or more constituents of a mixed gas. A mixed gas outlet emits a mixed gas from the body and is disposed at a center of the orbital array of gas inlets. A central gas mixing point, separate from the mixed gas outlet, comprises an internal volume disposed within the body and is surrounded by the orbital array of gas inlet. The internal volume is in fluid communication with the orbital array of gas inlets via a corresponding array of gas pathways extending from the internal volume to each of the gas inlets. Each gas path length of the respective gas pathways is the same. Control circuitry is configured to control gas flow rate within each of the gas pathways individually.

公开(公告)号：US20160076989A1

公开(公告)日：2016-03-17

申请号：US14489148

申请日：2014-09-17

Applicant: Lam Research Corporation

Inventor： Mark Taskar ,  Iqbal Shareef ,  Anthony Zemlock

IPC: G01N17/00 ,  H01L21/66

CPC classification number: H01L22/10 ,  H01L21/67017

Abstract: A corrosion sensor retainer assembly and method for predicting and detecting corrosion within a gas delivery system of a semiconductor substrate processing apparatus. The corrosion sensor retainer assembly comprises a laminate that includes a first insulating layer with a first port and a second insulating layer with a second port, wherein the first port and the second port are configured to retain a seal. The corrosion sensor retainer assembly includes a conductor housed within the laminate. The conductor forms a path that extends around the first port and the second port. At least a portion of the conductor has an exposed surface with a property that changes in the presence of corrosive gas or acid.

Abstract translation: 一种用于预测和检测半导体衬底处理装置的气体输送系统内的腐蚀的腐蚀传感器保持器组件和方法。 腐蚀传感器保持器组件包括层压体，其包括具有第一端口的第一绝缘层和具有第二端口的第二绝缘层，其中第一端口和第二端口构造成保持密封。 腐蚀传感器保持器组件包括容纳在层压板内的导体。 导体形成围绕第一端口和第二端口延伸的路径。 导体的至少一部分具有暴露的表面，其具有在存在腐蚀性气体或酸的情况下改变的性质。

公开(公告)号：US20150303035A1

公开(公告)日：2015-10-22

申请号：US14753738

申请日：2015-06-29

Applicant: LAM RESEARCH CORPORATION

Inventor： Iqbal Shareef ,  Mark Taskar ,  Evangelos Spyropoulos

IPC: H01J37/32 ,  C23C16/513 ,  H01L21/67

CPC classification number: H01J37/32449 ,  C23C16/45561 ,  C23C16/513 ,  G05D7/06 ,  G05D7/0658 ,  G05D11/132 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/67069 ,  Y10T137/0324 ,  Y10T137/7722

Abstract: A gas supply system for providing a plurality of process gases to a process chamber includes a plurality of mass flow controllers each arranged to receive a respective subset of the plurality of process gases. Each of the respective subsets includes more than one of the process gases, and at least one of the process gases is provided to more than one of the plurality of mass flow controllers. Respective valves are arranged upstream of each of the plurality of mass flow controllers to selectively provide the respective subsets to the mass flow controllers. A first quantity of the plurality of mass flow controllers is less than a total number of the plurality of process gases to be supplied to the process chamber. The first quantity is equal to a maximum number of the plurality of process gases to be used in the process chamber at any one time.

Abstract translation: 用于向处理室提供多个处理气体的气体供应系统包括多个质量流量控制器，每个质量流量控制器被布置成接收多个处理气体的相应子集。 各个子集中的每一个包括多于一个的处理气体，并且至少一个处理气体被提供给多个质量流量控制器中的一个以上。 各个阀布置在多个质量流量控制器中的每一个的上游，以选择性地向质量流量控制器提供相应的子集。 多个质量流量控制器的第一数量少于要供应到处理室的多个处理气体的总数。 第一数量等于在任何一个时间在处理室中使用的多种处理气体的最大数量。

公开(公告)号：US20150287573A1

公开(公告)日：2015-10-08

申请号：US14680244

申请日：2015-04-07

Applicant: LAM RESEARCH CORPORATION

Inventor： Mark Taskar ,  Iqbal Shareef

IPC: H01J37/32 ,  B01F15/02 ,  B01F3/02

CPC classification number: H01J37/3244 ,  B01F3/02 ,  B01F5/048 ,  Y10T29/49826

Abstract: A gas delivery apparatus for supplying process gas to a processing chamber of a plasma processing apparatus includes a mixing manifold having a plurality of gas inlets on a surface thereof, the gas inlets being equally spaced from a center mixing point of the mixing manifold; and optionally a plurality of gas supplies in communication with the plurality of gas inlets on the surface of the mixing manifold. A method of supplying gas to a processing chamber of a plasma processing apparatus using such a gas delivery apparatus involves providing a plurality of gas supplies in communication with a plurality of gas inlets on a surface of a mixing manifold; flowing at least two different gases from the plurality of gas supplies to the mixing manifold to create a first mixed gas; and supplying the first mixed gas to a plasma processing chamber coupled downstream of the mixing manifold.

Abstract translation: 用于将处理气体供给到等离子体处理装置的处理室的气体输送装置包括：混合歧管，其表面上具有多个气体入口，气体入口与混合歧管的中心混合点等间隔; 以及可选地与混合歧管表面上的多个气体入口连通的多个气体供应源。 使用这种气体输送装置向等离子体处理装置的处理室供给气体的方法包括提供与混合歧管的表面上的多个气体入口连通的多个气体供给装置; 将来自所述多个气体供应的至少两种不同气体流动到所述混合歧管以产生第一混合气体; 以及将第一混合气体供应到耦合在混合歧管下游的等离子体处理室。