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公开(公告)号：US09324909B2
公开(公告)日：2016-04-26
申请号：US14739779
申请日：2015-06-15
Applicant: Lextar Electronics Corporation
Inventor： Chang-Chin Yu , Hsiu-Mu Tang , Mong-Ea Lin
CPC classification number: H01L33/20 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/08 , H01L33/12 , H01L33/32 , H01L33/42 , H01L2933/0016
Abstract: Disclosed herein is a light emitting diode, the structure of the light emitting diode comprises a substrate, a first-type semiconductor layer, a structural layer, a light emitting layer, a second-type semiconductor layer, a transparent conductive layer, a first contact pad and a second contact pad in regular turn. The structural layer comprises a stacked structure having a trapezoid sidewall and nano columns extending from the trapezoid sidewall in regular arrangement. Also, a method for fabricating the light emitting diode is disclosed.
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公开(公告)号：US09064998B2
公开(公告)日：2015-06-23
申请号：US14554534
申请日：2014-11-26
Applicant: Lextar Electronics Corporation
Inventor： Chang-Chin Yu , Hsiu-Mu Tang , Mong-Ea Lin
CPC classification number: H01L33/06 , B82Y20/00 , B82Y40/00 , H01L33/08 , H01L33/18 , H01L33/20 , H01L33/32 , H01L33/42 , Y10S977/762 , Y10S977/95
Abstract: A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer.
Abstract translation: 发光二极管包括衬底，第一类型半导体层，纳米棒层和透明平面层。 第一型半导体层设置在基板上。 纳米棒层形成在第一型半导体层上。 纳米棒层包括多个纳米棒，并且每个纳米棒具有量子阱结构和第二类型半导体层。 量子阱结构与第一型半导体层接触，第二类型半导体层形成在量子阱结构上。 透明平面层填充在纳米棒之间。 第二类型半导体层的表面露出透明平面层。
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公开(公告)号：US20130341589A1
公开(公告)日：2013-12-26
申请号：US13796935
申请日：2013-03-12
Applicant: LEXTAR ELECTRONICS CORPORATION
Inventor： Chang-Chin Yu , Hsiu-Mu Tang , Mong-Ea Lin
IPC: H01L33/06
CPC classification number: H01L33/06 , B82Y20/00 , B82Y40/00 , H01L33/08 , H01L33/18 , H01L33/20 , H01L33/32 , H01L33/42 , Y10S977/762 , Y10S977/95
Abstract: A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer.
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公开(公告)号：US20130328010A1
公开(公告)日：2013-12-12
申请号：US13793850
申请日：2013-03-11
Applicant: LEXTAR ELECTRONICS CORPORATION
Inventor： Chang-Chin Yu , Hsiu-Mu Tang , Mong-Ea Lin
Abstract: A high brightness light-emitting diode free of p-type gallium nitride (GaN) layer is provided, which includes an n-type semiconductor layer, a multi-quantum well (MQW) layer, a p-type indium gallium nitride (InGaN) layer and an indium tin oxide (ITO) layer. The grain size of the ITO layer is ranging from 5 to 1000 angstroms. A method for manufacturing the high brightness light-emitting diode is also provided.
Abstract translation: 提供了不含p型氮化镓（GaN）层的高亮度发光二极管，其包括n型半导体层，多量子阱（MQW）层，p型氮化铟镓（InGaN） 层和氧化铟锡（ITO）层。 ITO层的晶粒尺寸范围为5至1000埃。 还提供了制造高亮度发光二极管的方法。
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