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    Light emitting diode and method of fabricating the same
    1.
    发明授权
    Light emitting diode and method of fabricating the same 有权
    发光二极管及其制造方法

    公开(公告)号：US09087960B2

    公开(公告)日：2015-07-21

    申请号：US13911481

    申请日：2013-06-06

    Applicant: LEXTAR ELECTRONICS CORPORATION

    Inventor： Chang-Chin Yu ,  Hsiu-Mu Tang ,  Mong-Ea Lin

    IPC: H01L31/0256 ,  H01L33/32 ,  H01L33/00 ,  H01L33/20 ,  H01L33/42

    CPC classification number: H01L33/20 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/08 ,  H01L33/12 ,  H01L33/32 ,  H01L33/42 ,  H01L2933/0016

    Abstract: Disclosed herein is a light emitting diode, the structure of the light emitting diode comprises a substrate, a first-type semiconductor layer, a structural layer, a light emitting layer, a second-type semiconductor layer, a transparent conductive layer, a first contact pad and a second contact pad in regular turn. The structural layer comprises a stacked structure having a trapezoid sidewall and nano columns extending from the trapezoid sidewall in regular arrangement. Also, a method for fabricating the light emitting diode is disclosed.

    Abstract translation: 这里公开了发光二极管，发光二极管的结构包括基板，第一类型半导体层，结构层，发光层，第二类型半导体层，透明导电层，第一触点 垫和第二接触垫。 结构层包括具有梯形侧壁和以规则排列从梯形侧壁延伸的纳米柱的堆叠结构。 另外，公开了一种制造发光二极管的方法。

    Light emitting diode and method for manufacturing the same
    5.
    发明授权
    Light emitting diode and method for manufacturing the same 有权
    发光二极管及其制造方法

    公开(公告)号：US09064998B2

    公开(公告)日：2015-06-23

    申请号：US14554534

    申请日：2014-11-26

    Applicant: Lextar Electronics Corporation

    Inventor： Chang-Chin Yu ,  Hsiu-Mu Tang ,  Mong-Ea Lin

    IPC: H01L33/06 ,  H01L33/32 ,  B82Y40/00 ,  H01L33/18 ,  H01L33/20 ,  H01L33/42

    CPC classification number: H01L33/06 ,  B82Y20/00 ,  B82Y40/00 ,  H01L33/08 ,  H01L33/18 ,  H01L33/20 ,  H01L33/32 ,  H01L33/42 ,  Y10S977/762 ,  Y10S977/95

    Abstract: A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer.

    Abstract translation: 发光二极管包括衬底，第一类型半导体层，纳米棒层和透明平面层。 第一型半导体层设置在基板上。 纳米棒层形成在第一型半导体层上。 纳米棒层包括多个纳米棒，并且每个纳米棒具有量子阱结构和第二类型半导体层。 量子阱结构与第一型半导体层接触，第二类型半导体层形成在量子阱结构上。 透明平面层填充在纳米棒之间。 第二类型半导体层的表面露出透明平面层。

    LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME
    7.
    发明申请
    LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    发光二极管及其制造方法

    公开(公告)号：US20130328010A1

    公开(公告)日：2013-12-12

    申请号：US13793850

    申请日：2013-03-11

    Applicant: LEXTAR ELECTRONICS CORPORATION

    Inventor： Chang-Chin Yu ,  Hsiu-Mu Tang ,  Mong-Ea Lin

    IPC: H01L33/04 ,  H01L33/32

    CPC classification number: H01L33/04 ,  H01L33/32 ,  H01L33/42

    Abstract: A high brightness light-emitting diode free of p-type gallium nitride (GaN) layer is provided, which includes an n-type semiconductor layer, a multi-quantum well (MQW) layer, a p-type indium gallium nitride (InGaN) layer and an indium tin oxide (ITO) layer. The grain size of the ITO layer is ranging from 5 to 1000 angstroms. A method for manufacturing the high brightness light-emitting diode is also provided.

    Abstract translation: 提供了不含p型氮化镓（GaN）层的高亮度发光二极管，其包括n型半导体层，多量子阱（MQW）层，p型氮化铟镓（InGaN） 层和氧化铟锡（ITO）层。 ITO层的晶粒尺寸范围为5至1000埃。 还提供了制造高亮度发光二极管的方法。

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