公开(公告)号：US20240015971A1

公开(公告)日：2024-01-11

申请号：US18474061

申请日：2023-09-25

Applicant: Lodestar Licensing Group LLC

Inventor： Shuangqiang Luo ,  Xuan Li ,  Adeline Yii

IPC: H10B43/27 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35

CPC classification number: H10B43/27 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35

Abstract: A microelectronic device comprises a stack structure, at least one staircase structure, contact structures, and support structures. The stack structure comprises vertically alternating conductive structures and insulating structures arranged in tiers, each of the tiers individually comprising one of the conductive structures and one of the insulating structures. The at least one staircase structure is within the stack structure and has steps comprising edges of at least some of the tiers. The contact structures are on the steps of the at least one staircase structure. The support structures horizontally alternate with the contact structures in a first horizontal direction and vertically extend through the stack structure. The support structures have oblong horizontal cross-sectional shapes. Additional microelectronic devices, memory devices, and electronic systems are also described.

公开(公告)号：US20250126791A1

公开(公告)日：2025-04-17

申请号：US18986471

申请日：2024-12-18

Applicant: Lodestar Licensing Group LLC

Inventor： Shuangqiang Luo ,  Indra V. Chary ,  Justin B. Dorhout

IPC: H10B43/27 ,  G11C16/08 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35

Abstract: A method of forming a microelectronic device comprises forming a microelectronic device structure. The microelectronic device structure comprises a stack structure comprising insulative structures and additional insulative structures vertically alternating with the insulative structures, a dielectric structure vertically extending partially through the stack structure, and a dielectric material vertically overlying and horizontally extending across the stack structure and the dielectric structure. Portions of at least the dielectric material and the dielectric structure are removed to form a trench vertically overlying and at least partially horizontally overlapping a remaining portion of the dielectric structure. The trench is substantially filled with additional dielectric material. Microelectronic devices, memory devices, and electronic systems are also described.

公开(公告)号：US12185546B2

公开(公告)日：2024-12-31

申请号：US18343383

申请日：2023-06-28

Applicant: Lodestar Licensing Group, LLC

Inventor： Shuangqiang Luo ,  Indra V. Chary ,  Justin B. Dorhout

IPC: H01L21/00 ,  G11C16/08 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

Abstract: A method of forming a microelectronic device comprises forming a microelectronic device structure. The microelectronic device structure comprises a stack structure comprising insulative structures and additional insulative structures vertically alternating with the insulative structures, a dielectric structure vertically extending partially through the stack structure, and a dielectric material vertically overlying and horizontally extending across the stack structure and the dielectric structure. Portions of at least the dielectric material and the dielectric structure are removed to form a trench vertically overlying and at least partially horizontally overlapping a remaining portion of the dielectric structure. The trench is substantially filled with additional dielectric material. Microelectronic devices, memory devices, and electronic systems are also described.

公开(公告)号：US20240237336A9

公开(公告)日：2024-07-11

申请号：US18382863

申请日：2023-10-23

Applicant: Lodestar Licensing Group LLC

Inventor： Shuangqiang Luo ,  Indra V. Chary ,  Justin B. Dorhout ,  Rita J. Klein

IPC: H10B41/41 ,  G11C5/06 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35 ,  H10B43/40

CPC classification number: H10B41/41 ,  G11C5/063 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35 ,  H10B43/40

Abstract: Some embodiments include an integrated assembly having a conductive expanse over conductive nodes. The conductive nodes include a first composition. A bottom surface of the conductive expanse includes a second composition which is different composition than the first composition. A stack is over the conductive expanse. The stack includes alternating first and second levels. Pillar structures extend vertically through the stack. Each of the pillar structures includes a post of conductive material laterally surrounded by an insulative liner. At least one of the posts extends through the conductive expanse to directly contact one of the conductive nodes. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US20230363164A1

公开(公告)日：2023-11-09

申请号：US18343383

申请日：2023-06-28

Applicant: Lodestar Licensing Group, LLC

Inventor： Shuangqiang Luo ,  Indra V. Chary ,  Justin B. Dorhout

IPC: H10B43/27 ,  G11C16/08 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35

CPC classification number: H10B43/27 ,  G11C16/08 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35

Abstract: A method of forming a microelectronic device comprises forming a microelectronic device structure. The microelectronic device structure comprises a stack structure comprising insulative structures and additional insulative structures vertically alternating with the insulative structures, a dielectric structure vertically extending partially through the stack structure, and a dielectric material vertically overlying and horizontally extending across the stack structure and the dielectric structure. Portions of at least the dielectric material and the dielectric structure are removed to form a trench vertically overlying and at least partially horizontally overlapping a remaining portion of the dielectric structure. The trench is substantially filled with additional dielectric material. Microelectronic devices, memory devices, and electronic systems are also described.