公开(公告)号：US20070161251A1

公开(公告)日：2007-07-12

申请号：US11681027

申请日：2007-03-01

申请人： Luan Tran ,  William Rericha ,  John Lee ,  Ramakanth Alapati ,  Sheron Honarkhah ,  Shuang Meng ,  Puneet Sharma ,  Jingyi Bai ,  Zhiping Yin ,  Paul Morgan ,  Mirzafer Abatchev ,  Gurtej Sandhu ,  D. Durcan

发明人： Luan Tran ,  William Rericha ,  John Lee ,  Ramakanth Alapati ,  Sheron Honarkhah ,  Shuang Meng ,  Puneet Sharma ,  Jingyi Bai ,  Zhiping Yin ,  Paul Morgan ,  Mirzafer Abatchev ,  Gurtej Sandhu ,  D. Durcan

IPC分类号： H01L21/302

CPC分类号： H01L21/0338 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/3088

摘要： Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC. The combined pattern made out by the first pattern and the second pattern is transferred to an underlying amorphous silicon layer and the pattern is subjected to a carbon strip to remove BARC and photoresist material. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, having features of difference sizes, is then etched into the underlying substrate through the amorphous carbon hard mask layer.

摘要翻译： 通过使用通过组合两个单独形成的图案形成的掩模蚀刻衬底来形成集成电路的不同尺寸的特征。 间距乘法用于形成第一图案的相对较小的特征以及用于形成第二图案的较大特征的常规光刻。 间距倍增通过对光致抗蚀剂进行图案化，然后将该图案蚀刻成无定形碳层来实现。 然后在无定形碳的侧壁上形成侧壁间隔物。 去除无定形碳，留下限定第一掩模图案的侧壁间隔物。 然后将底部抗反射涂层（BARC）沉积在间隔物周围以形成平坦表面，并且在BARC上形成光致抗蚀剂层。 接下来通过常规光刻法将光致抗蚀剂图案化以形成第二图案，然后将其转印到BARC。 通过第一图案和第二图案形成的组合图案被转印到下面的非晶硅层，并且图案经受碳带以去除BARC和光致抗蚀剂材料。 然后将组合图案转移到氧化硅层，然后转移到无定形碳掩模层。 具有不同尺寸特征的组合掩模图案然后通过无定形碳硬掩模层蚀刻到下面的衬底中。

公开(公告)号：US20070138526A1

公开(公告)日：2007-06-21

申请号：US11669840

申请日：2007-01-31

申请人： Luan Tran ,  William Rericha ,  John Lee ,  Ramakanth Alapati ,  Sheron Honarkhah ,  Shuang Meng ,  Puneet Sharma ,  Jingyi Bai ,  Zhiping Yin ,  Paul Morgan ,  Mirzafer Abatchev ,  Gurtej Sandhu ,  D. Durcan

发明人： Luan Tran ,  William Rericha ,  John Lee ,  Ramakanth Alapati ,  Sheron Honarkhah ,  Shuang Meng ,  Puneet Sharma ,  Jingyi Bai ,  Zhiping Yin ,  Paul Morgan ,  Mirzafer Abatchev ,  Gurtej Sandhu ,  D. Durcan

IPC分类号： H01L29/94

CPC分类号： H01L21/0338 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/3088

摘要： Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC. The combined pattern made out by the first pattern and the second pattern is transferred to an underlying amorphous silicon layer and the pattern is subjected to a carbon strip to remove BARC and photoresist material. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, having features of difference sizes, is then etched into the underlying substrate through the amorphous carbon hard mask layer.

公开(公告)号：US20060211260A1

公开(公告)日：2006-09-21

申请号：US11214544

申请日：2005-08-29

申请人： Luan Tran ,  William Rericha ,  John Lee ,  Ramakanth Alapati ,  Sheron Honarkhah ,  Shuang Meng ,  Puneet Sharma ,  Jingyi (Jenny) Bai ,  Zhiping Yin ,  Paul Morgan ,  Mirzafer Abatchev ,  Gurtej Sandhu ,  D. Durcan

发明人： Luan Tran ,  William Rericha ,  John Lee ,  Ramakanth Alapati ,  Sheron Honarkhah ,  Shuang Meng ,  Puneet Sharma ,  Jingyi (Jenny) Bai ,  Zhiping Yin ,  Paul Morgan ,  Mirzafer Abatchev ,  Gurtej Sandhu ,  D. Durcan

IPC分类号： H01L21/31

CPC分类号： H01L21/0338 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/3088

摘要： Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC. The combined pattern made out by the first pattern and the second pattern is transferred to an underlying amorphous silicon layer and the pattern is subjected to a carbon strip to remove BARC and photoresist material. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, having features of difference sizes, is then etched into the underlying substrate through the amorphous carbon hard mask layer.

摘要翻译： 通过使用通过组合两个单独形成的图案形成的掩模蚀刻衬底来形成集成电路的不同尺寸的特征。 间距乘法用于形成第一图案的相对较小的特征以及用于形成第二图案的较大特征的常规光刻。 间距倍增通过对光致抗蚀剂进行图案化，然后将该图案蚀刻成无定形碳层来实现。 然后在无定形碳的侧壁上形成侧壁间隔物。 去除无定形碳，留下限定第一掩模图案的侧壁间隔物。 然后将底部抗反射涂层（BARC）沉积在间隔物周围以形成平坦表面，并且在BARC上形成光致抗蚀剂层。 接下来通过常规光刻法将光致抗蚀剂图案化以形成第二图案，然后将其转印到BARC。 通过第一图案和第二图案形成的组合图案被转印到下面的非晶硅层，并且图案经受碳带以去除BARC和光致抗蚀剂材料。 然后将组合图案转移到氧化硅层，然后转移到无定形碳掩模层。 具有不同尺寸特征的组合掩模图案然后通过无定形碳硬掩模层蚀刻到下面的衬底中。

公开(公告)号：US20070128856A1

公开(公告)日：2007-06-07

申请号：US11670296

申请日：2007-02-01

申请人： Luan Tran ,  William Rericha ,  John Lee ,  Ramakanth Alapati ,  Sheron Honarkhah ,  Shuang Meng ,  Puneet Sharma ,  Jingyi (Jenny) Bai ,  Zhiping Yin ,  Paul Morgan ,  Mirzafer Abatchev ,  Gurtej Sandhu ,  D. Durcan

发明人： Luan Tran ,  William Rericha ,  John Lee ,  Ramakanth Alapati ,  Sheron Honarkhah ,  Shuang Meng ,  Puneet Sharma ,  Jingyi (Jenny) Bai ,  Zhiping Yin ,  Paul Morgan ,  Mirzafer Abatchev ,  Gurtej Sandhu ,  D. Durcan

IPC分类号： H01L21/4763

CPC分类号： H01L21/0338 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/3088

摘要： Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC. The combined pattern made out by the first pattern and the second pattern is transferred to an underlying amorphous silicon layer and the pattern is subjected to a carbon strip to remove BARC and photoresist material. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, having features of difference sizes, is then etched into the underlying substrate through the amorphous carbon hard mask layer.

公开(公告)号：US07589015B2

公开(公告)日：2009-09-15

申请号：US11698072

申请日：2007-01-26

申请人： Gurtej S. Sandhu ,  Zhiping Yin

发明人： Gurtej S. Sandhu ,  Zhiping Yin

IPC分类号： H01L21/4763

CPC分类号： H01L21/0276 ,  G03F7/091 ,  H01L21/0275 ,  H01L21/31144 ,  H01L21/3145 ,  H01L21/31625 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76832 ,  H01L29/7833 ,  Y10S430/151 ,  Y10S438/952

摘要： Techniques are disclosed for fabricating a device using a photolithographic process. The method includes providing a first anti-reflective coating over a surface of a substrate. A layer which is transparent to a wavelength of light used during the photolithographic process is provided over the first anti-reflective coating, and a photosensitive material is provided above the transparent layer. The photosensitive material is exposed to a source of radiation including the wavelength of light. Preferably, the first anti-reflective coating extends beneath substantially the entire transparent layer. The complex refractive index of the first anti-reflective coating can be selected to maximize the absorption at the first anti-reflective coating to reduce notching of the photosensitive material.

摘要翻译： 公开了使用光刻工艺制造器件的技术。 该方法包括在衬底的表面上提供第一抗反射涂层。 在光刻工艺中使用的光的波长透明的层被提供在第一抗反射涂层上，并且感光材料设置在透明层的上方。 感光材料暴露于包括光的波长的辐射源。 优选地，第一抗反射涂层在基本上整个透明层的下方延伸。 可以选择第一抗反射涂层的复合折射率以使第一抗反射涂层处的吸收最大化，以减少光敏材料的凹陷。

公开(公告)号：US06380611B1

公开(公告)日：2002-04-30

申请号：US09146674

申请日：1998-09-03

申请人： Zhiping Yin ,  Gurtej S. Sandhu

发明人： Zhiping Yin ,  Gurtej S. Sandhu

IPC分类号： H01L2358

CPC分类号： H01L21/31144 ,  H01L21/0276

摘要： An improved photolithography technique is provided whereby the beneficial effects of using an anti-reflective coating may be realized while maintaining critical dimensions in each subsequent step. This improvement is realized by the treatment of the anti-reflective coating with a gaseous plasma or a solution of sulfuric acid and hydrogen peroxide. By treating the anti-reflective coating with gaseous plasma or solution of sulfuric acid and hydrogen peroxide, no “footing” results and the critical dimensions as set by the photoresist mask are preserved to provide an accurately patterned mask for subsequent steps.

公开(公告)号：US07576441B2

公开(公告)日：2009-08-18

申请号：US11214367

申请日：2005-08-29

申请人： Zhiping Yin ,  Gurtej S. Sandhu

发明人： Zhiping Yin ,  Gurtej S. Sandhu

IPC分类号： H01L23/544

CPC分类号： H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/28088 ,  H01L21/28123 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/32139 ,  H01L21/76802 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/84 ,  H01L28/90

摘要： A hard mask comprising boron-doped amorphous carbon, and a method for forming the hard mask, provides improved resistance to etches of a variety of materials compared with previous amorphous carbon hard mask layers.

摘要翻译： 包含硼掺杂的无定形碳的硬掩模和形成硬掩模的方法与先前的无定形碳硬掩模层相比提供了改进的各种材料的蚀刻耐蚀性。

公开(公告)号：US07129180B2

公开(公告)日：2006-10-31

申请号：US10661100

申请日：2003-09-12

申请人： Gurtej S. Sandhu ,  Zhiping Yin ,  Weimin Li

发明人： Gurtej S. Sandhu ,  Zhiping Yin ,  Weimin Li

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3081 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10852

摘要： A masking structure having multiple layers is formed. The masking structure includes an amorphous carbon layer and a cap layer formed over the amorphous carbon layer. The amorphous carbon layer includes transparent amorphous carbon. The cap layer includes non-oxide materials. The masking structure may be used as a mask in an etching process during fabrication of semiconductor devices.

公开(公告)号：US07067894B2

公开(公告)日：2006-06-27

申请号：US10684431

申请日：2003-10-15

申请人： Gurtej S. Sandhu ,  Zhiping Yin

发明人： Gurtej S. Sandhu ,  Zhiping Yin

IPC分类号： H01L31/232

CPC分类号： H01L21/0276 ,  G03F7/091 ,  H01L21/0275 ,  H01L21/31144 ,  H01L21/3145 ,  H01L21/31625 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76832 ,  H01L29/7833 ,  Y10S430/151 ,  Y10S438/952

摘要： Techniques are disclosed for fabricating a device using a photolithographic process. The method includes providing a first anti-reflective coating over a surface of a substrate. A layer which is transparent to a wavelength of light used during the photolithographic process is provided over the first anti-reflective coating, and a photosensitive material is provided above the transparent layer. The photosensitive material is exposed to a source of radiation including the wavelength of light. Preferably, the first anti-reflective coating extends beneath substantially the entire transparent layer. The complex refractive index of the first anti-reflective coating can be selected to maximize the absorption at the first anti-reflective coating to reduce notching of the photosensitive material.

摘要翻译： 公开了使用光刻工艺制造器件的技术。 该方法包括在衬底的表面上提供第一抗反射涂层。 在光刻工艺中使用的光的波长透明的层被提供在第一抗反射涂层上，并且感光材料设置在透明层的上方。 感光材料暴露于包括光的波长的辐射源。 优选地，第一抗反射涂层在基本上整个透明层的下方延伸。 可以选择第一抗反射涂层的复合折射率以使第一抗反射涂层处的吸收最大化，以减少光敏材料的凹陷。

公开(公告)号：US06174816B1

公开(公告)日：2001-01-16

申请号：US09544148

申请日：2000-04-06

申请人： Zhiping Yin ,  Gurtej S. Sandhu

发明人： Zhiping Yin ,  Gurtej S. Sandhu

IPC分类号： H01L2100

CPC分类号： H01L21/31144 ,  H01L21/0276

摘要： An improved photolithography technique is provided whereby the beneficial effects of using an anti-reflective coating may be realized while maintaining critical dimensions in each subsequent step. This improvement is realized by the treatment of the anti-reflective coating with a gaseous plasma or a solution of sulfuric acid and hydrogen peroxide. By treating the anti-reflective coating with gaseous plasma or solution of sulfuric acid and hydrogen peroxide, no “footing” results and the critical dimensions as set by the photoresist mask are preserved to provide an accurately patterned mask for subsequent steps.

摘要翻译： 提供了一种改进的光刻技术，由此可以在每个后续步骤中保持关键尺寸的同时实现使用抗反射涂层的有益效果。 这种改进通过用气态等离子体或硫酸和过氧化氢溶液处理抗反射涂层来实现。 通过用气态等离子体或硫酸和过氧化氢溶液处理抗反射涂层，不会产生“基础”的结果，并且保留由光致抗蚀剂掩模设定的临界尺寸以提供用于后续步骤的精确图案化掩模。