摘要:
A memory cell of a data storage device includes serially-connected first and second magnetoresistive devices. The first magnetoresistive device has first and second resistance states. The second magnetoresistive device has third and fourth resistance states. The four resistance states are detectably different.
摘要:
A memory cell includes a conductor clad with ferromagnetic material; first and second spacer layers on opposite sides of the clad conductor; a first data layer on the first spacer layer; and a second data layer on the second spacer layer.
摘要:
A magneto-resistive device includes data and reference layers having different coercivities. Each layer has a magnetization that can be oriented in either of two directions. The memory device may be read by temporarily setting the magnetization of the reference layer to a known orientation, and determining a resistance state of the device.
摘要:
A method and circuit write a memory cell. The method applies a pulse to a write line connected to the memory cell. The duration of the pulse is not predetermined. The method compares a value on the input side of the cell to a reference value. The method discontinues the pulse on the write line, in response to the comparing step, preferably if the value on the write line exceeds the reference value. The circuit comprises a pulse generator and a comparator. The pulse generator has an output and an enable input. The output is connected to a write line connected to the memory cell. The output, when enabled, carries a pulse. The comparator has two inputs and an output. One of the inputs is connected to the write line. The other of the inputs is connected to a reference. The output is connected to the write line, whereby the pulse is disabled or enabled on the write line depending upon comparator output. A complete memory system comprises an array of memory cells, a write line, and a pulse generator and comparator as described above.
摘要:
A method and circuit write a memory cell. The method applies a pulse train to a write line connected to the memory cell. The number of pulses in the pulse train is not predetermined. The method compares a value on the input side of the cell to a reference value, wherein the input side of the memory cell provides an indication that a writing operation is complete. The method discontinues the pulse train on the write line, in response to the comparing step, preferably if the value on the write line exceeds the reference value. Preferably, the pulses are short in width and large in magnitude. The method may optionally count the number of pulses in the pulse train, and discontinue the pulse train on the write line and/or declare the cell as unusable if the number of pulses exceeds a predetermined maximum. The circuit comprises a pulse train generator and a comparator. The pulse train generator has an output and an enable input. The output is connected to a write line connected to the memory cell. The output, when enabled, carries a pulse train. The comparator has two inputs and an output. One of the inputs is connected to the write line. The other of the inputs is connected to a reference. The output is connected to the enable input of the pulse train generator, whereby the pulse train generator is disabled or enabled depending upon the comparator output. Optionally, the circuit further comprises a counter that counts pulses and disables the pulse train generator after a predetermined maximum number of pulses. A complete memory system comprises an array of memory cells, a write line, and a pulse train generator and comparator as described above.
摘要:
A data storage device includes a resistive cross point array of memory cells. Each memory cell includes serially-connected first and second resistive devices. Each resistive device has programmable first and second resistance states. The data storage device further includes pluralities of first, second and third conductors, and a read circuit. Each first conductor is connected to data layers of a column of the first magnetoresistive devices; each second conductor is connected to data layers of a column of second magnetoresistive devices; and each third conductor is between reference layers of a row of first and second magnetoresistive devices. The read circuit applies different first and second voltages during read operations. The first voltage is applied to the first and second conductors crossing a selected memory cell; and the second voltage is applied to the third conductor crossing the selected memory cell.
摘要:
A magnetic memory device is disclosed that includes first and second soft reference layers, first and second barrier layers, and a sense layer, bound between the first and second barrier layers, which are further bound by the first and second soft reference layers.
摘要:
A magneto-resistive device includes first and second ferromagnetic layers having different coercivities, and a spacer layer between the first and second layers. Each ferromagnetic layer has a magnetization that can be oriented in either of two directions.
摘要:
The present invention is related to detecting location of a navigation device using sensor data analysis, where the sensor is coupled to the navigation device. A hierarchical algorithm is used for making a series of decisions regarding the location of the navigation device, with each decision corresponding to a class among a plurality of classes related to the possible motion modes and/or precise location of the device, including the location of the device with respect to a person's body. By accurately identifying the device location, the hierarchical algorithm facilitates in providing relevant contextual information, thereby enhancing situational awareness.
摘要:
A communication system that comprises at least two links to carry signals, a first communication unit and a second communication unit. The first communication unit comprises at least two ports, each port configured to transmit and receive signals; and a logic unit configured to process the signals transmitted and received by each of the at least two ports in the first communication unit. The second communication unit comprises at least two ports, each port configured to transmit and receive signals and coupled to a respective one of the at least two ports in the first communication unit via a respective one of the at least two links; a programmable logic unit configured to process the signals transmitted and received by each of the at least two ports in the second communication unit; and a processor. The processor is configured to detect a crossover connection between one of the at least two ports in the second communication unit and the respective one of the at least two ports in the first communication unit based on an analysis of a pair identifier field in a message received at the second communication unit, wherein the pair identifier field is separate from the address field of the received message.