Read methods for magneto-resistive device having soft reference layer
    13.
    发明授权
    Read methods for magneto-resistive device having soft reference layer 有权
    具有软参考层的磁阻器件的读取方法

    公开(公告)号:US06538917B1

    公开(公告)日:2003-03-25

    申请号:US09963851

    申请日:2001-09-25

    IPC分类号: G11C1115

    CPC分类号: G11C11/16

    摘要: A magneto-resistive device includes data and reference layers having different coercivities. Each layer has a magnetization that can be oriented in either of two directions. The memory device may be read by temporarily setting the magnetization of the reference layer to a known orientation, and determining a resistance state of the device.

    摘要翻译: 磁阻装置包括具有不同矫顽力的数据和参考层。 每个层具有可以在两个方向中的任一方向上定向的磁化。 可以通过将参考层的磁化临时设置为已知取向来读取存储器件,并且确定器件的电阻状态。

    Write pulse limiting for worm storage device
    14.
    发明授权
    Write pulse limiting for worm storage device 有权
    为蠕虫存储设备写入脉冲限制

    公开(公告)号:US06434060B1

    公开(公告)日:2002-08-13

    申请号:US09917882

    申请日:2001-07-31

    IPC分类号: G11C700

    摘要: A method and circuit write a memory cell. The method applies a pulse to a write line connected to the memory cell. The duration of the pulse is not predetermined. The method compares a value on the input side of the cell to a reference value. The method discontinues the pulse on the write line, in response to the comparing step, preferably if the value on the write line exceeds the reference value. The circuit comprises a pulse generator and a comparator. The pulse generator has an output and an enable input. The output is connected to a write line connected to the memory cell. The output, when enabled, carries a pulse. The comparator has two inputs and an output. One of the inputs is connected to the write line. The other of the inputs is connected to a reference. The output is connected to the write line, whereby the pulse is disabled or enabled on the write line depending upon comparator output. A complete memory system comprises an array of memory cells, a write line, and a pulse generator and comparator as described above.

    摘要翻译: 一种方法和电路写入一个存储单元。 该方法向连接到存储单元的写入线施加脉冲。 脉冲的持续时间不是预定的。 该方法将单元格输入端的值与参考值进行比较。 该方法响应于比较步骤中止写入线上的脉冲,优选地,如果写入线上的值超过参考值。 电路包括脉冲发生器和比较器。 脉冲发生器具有输出和使能输入。 输出连接到连接到存储单元的写入线。 输出,当使能时,会携带一个脉冲。 比较器有两个输入和一个输出。 其中一个输入连接到写入线。 另一个输入连接到引用。 输出连接到写入线,根据比较器输出,脉冲在写入线上被禁止或使能。 完整的存储器系统包括如上所述的存储器单元阵列,写入线以及脉冲发生器和比较器。

    Pulse train writing of worm storage device
    15.
    发明授权
    Pulse train writing of worm storage device 有权
    脉冲串写蜗杆存储装置

    公开(公告)号:US06434048B1

    公开(公告)日:2002-08-13

    申请号:US09908901

    申请日:2001-07-20

    IPC分类号: G11C700

    摘要: A method and circuit write a memory cell. The method applies a pulse train to a write line connected to the memory cell. The number of pulses in the pulse train is not predetermined. The method compares a value on the input side of the cell to a reference value, wherein the input side of the memory cell provides an indication that a writing operation is complete. The method discontinues the pulse train on the write line, in response to the comparing step, preferably if the value on the write line exceeds the reference value. Preferably, the pulses are short in width and large in magnitude. The method may optionally count the number of pulses in the pulse train, and discontinue the pulse train on the write line and/or declare the cell as unusable if the number of pulses exceeds a predetermined maximum. The circuit comprises a pulse train generator and a comparator. The pulse train generator has an output and an enable input. The output is connected to a write line connected to the memory cell. The output, when enabled, carries a pulse train. The comparator has two inputs and an output. One of the inputs is connected to the write line. The other of the inputs is connected to a reference. The output is connected to the enable input of the pulse train generator, whereby the pulse train generator is disabled or enabled depending upon the comparator output. Optionally, the circuit further comprises a counter that counts pulses and disables the pulse train generator after a predetermined maximum number of pulses. A complete memory system comprises an array of memory cells, a write line, and a pulse train generator and comparator as described above.

    摘要翻译: 一种方法和电路写入一个存储单元。 该方法将脉冲串应用于连接到存储单元的写入线。 脉冲串中的脉冲数不是预定的。 该方法将小区的输入侧的值与参考值进行比较,其中存储单元的输入侧提供写入操作完成的指示。 该方法响应于比较步骤中止写入线上的脉冲序列,优选地,如果写入线上的值超过参考值。 优选地,脉冲的宽度较短,而且幅度较大。 该方法可以可选地计数脉冲串中的脉冲数,并且如果脉冲数超过预定最大值,则在写入线上中止脉冲序列和/或将单元声明为不可用。 电路包括脉冲串发生器和比较器。 脉冲串发生器具有输出和使能输入。 输出连接到连接到存储单元的写入线。 输出,当使能时,携带脉冲串。 比较器有两个输入和一个输出。 其中一个输入连接到写入线。 另一个输入连接到引用。 输出连接到脉冲串发生器的使能输入端,根据比较器输出,脉冲串发生器被禁止或使能。 可选地,电路还包括计数器,其计数脉冲并且在预定的最大脉冲数之后禁用脉冲序列发生器。 完整的存储器系统包括如上所述的存储器单元阵列,写入线以及脉冲序列发生器和比较器。

    Read operations on multi-bit memory cells in resistive cross point arrays
    16.
    发明授权
    Read operations on multi-bit memory cells in resistive cross point arrays 有权
    读取电阻式交叉点阵列中多位存储单元的操作

    公开(公告)号:US06754097B2

    公开(公告)日:2004-06-22

    申请号:US10234511

    申请日:2002-09-03

    IPC分类号: G11C1100

    摘要: A data storage device includes a resistive cross point array of memory cells. Each memory cell includes serially-connected first and second resistive devices. Each resistive device has programmable first and second resistance states. The data storage device further includes pluralities of first, second and third conductors, and a read circuit. Each first conductor is connected to data layers of a column of the first magnetoresistive devices; each second conductor is connected to data layers of a column of second magnetoresistive devices; and each third conductor is between reference layers of a row of first and second magnetoresistive devices. The read circuit applies different first and second voltages during read operations. The first voltage is applied to the first and second conductors crossing a selected memory cell; and the second voltage is applied to the third conductor crossing the selected memory cell.

    摘要翻译: 数据存储装置包括存储单元的电阻交叉点阵列。 每个存储单元包括串联连接的第一和第二电阻器件。 每个电阻器件具有可编程的第一和第二电阻状态。 数据存储装置还包括多个第一,第二和第三导体和读取电路。 每个第一导体连接到第一磁阻器件的列的数据层; 每个第二导体连接到第二磁阻器件列的数据层; 并且每个第三导体位于一列第一和第二磁阻器件的参考层之间。 读取电路在读取操作期间施加不同的第一和第二电压。 第一电压被施加到与所选择的存储单元交叉的第一和第二导体; 并且第二电压被施加到与选择的存储单元交叉的第三导体。

    Crossover operation in A 1+1 protection switching environment
    20.
    发明授权
    Crossover operation in A 1+1 protection switching environment 有权
    A 1 + 1保护切换环境中的交叉运行

    公开(公告)号:US08824273B2

    公开(公告)日:2014-09-02

    申请号:US13027610

    申请日:2011-02-15

    摘要: A communication system that comprises at least two links to carry signals, a first communication unit and a second communication unit. The first communication unit comprises at least two ports, each port configured to transmit and receive signals; and a logic unit configured to process the signals transmitted and received by each of the at least two ports in the first communication unit. The second communication unit comprises at least two ports, each port configured to transmit and receive signals and coupled to a respective one of the at least two ports in the first communication unit via a respective one of the at least two links; a programmable logic unit configured to process the signals transmitted and received by each of the at least two ports in the second communication unit; and a processor. The processor is configured to detect a crossover connection between one of the at least two ports in the second communication unit and the respective one of the at least two ports in the first communication unit based on an analysis of a pair identifier field in a message received at the second communication unit, wherein the pair identifier field is separate from the address field of the received message.

    摘要翻译: 一种包括至少两个用于承载信号的链路的通信系统,第一通信单元和第二通信单元。 第一通信单元包括至少两个端口,每个端口被配置为发送和接收信号; 以及逻辑单元,被配置为处理由所述第一通信单元中的所述至少两个端口中的每一个发送和接收的信号。 所述第二通信单元包括至少两个端口,每个端口被配置为经由所述至少两个链路中的相应一个发送和接收信号并且耦合到所述第一通信单元中的所述至少两个端口中的相应一个端口; 可编程逻辑单元,被配置为处理由所述第二通信单元中的所述至少两个端口中的每一个发送和接收的信号; 和处理器。 处理器被配置为基于对所接收的消息中的对标识符字段的分析来检测第二通信单元中的至少两个端口中的一个端口与第一通信单元中的至少两个端口中的相应一个之间的交叉连接 在第二通信单元处,其中对标识符字段与接收到的消息的地址字段分离。