公开(公告)号：US10679991B2

公开(公告)日：2020-06-09

申请号：US16159180

申请日：2018-10-12

Applicant: Micron Technology, Inc.

Inventor： Michael Smith

IPC: H01L21/761 ,  H01L21/02 ,  H01L21/223 ,  H01L21/265 ,  H01L21/266 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/8238 ,  H01L27/092 ,  H01L21/74 ,  H01L21/762

Abstract: Apparatuses and methods are disclosed. One such apparatus includes a well having a first type of conductivity formed within a semiconductor structure having a second type of conductivity. A boundary of the well has an edge that is substantially beneath an edge of an active area of a tap to the well.

公开(公告)号：US10679982B2

公开(公告)日：2020-06-09

申请号：US16108413

申请日：2018-08-22

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Michael Smith

IPC: H01L27/02 ,  G11C16/04 ,  G11C16/16 ,  G11C16/22 ,  G11C7/02 ,  G11C16/08

Abstract: Circuit-protection devices may include first and second circuit-protection units, a first gate having a first source/drain connected to a first node of the first circuit-protection unit, and a second gate having a first source/drain connected to a first node of the second circuit-protection unit, wherein a second source/drain of the first gate is connected to a second source/drain of the second gate.

公开(公告)号：US20160336276A1

公开(公告)日：2016-11-17

申请号：US15218888

申请日：2016-07-25

Applicant: Micron Technology, Inc.

Inventor： Vladimir Mikhalev ,  Michael Smith ,  Henry J. Fulford ,  Puneet Sharma ,  Zia A. Shafi

IPC: H01L23/552 ,  H03K17/16 ,  H01L29/78 ,  H01L23/532 ,  H01L29/40 ,  H01L23/522

CPC classification number: H01L23/552 ,  H01L23/5225 ,  H01L23/5226 ,  H01L23/53271 ,  H01L27/088 ,  H01L29/402 ,  H01L29/404 ,  H01L29/45 ,  H01L29/7833 ,  H01L2924/0002 ,  H03K17/161 ,  H03K17/162 ,  H01L2924/00

Abstract: Semiconductor devices are described, along with methods and systems that include them. One such device includes a diffusion region in a semiconductor material, a terminal coupled to the diffusion region, and a field plate coupled to the terminal and extending from the terminal over the diffusion region to shield the diffusion region. Additional embodiments are also described.

公开(公告)号：US20160093694A1

公开(公告)日：2016-03-31

申请号：US14502804

申请日：2014-09-30

Applicant: Micron Technology, Inc.

Inventor： Michael Smith

IPC: H01L29/06 ,  H01L29/36 ,  H01L29/10 ,  H01L21/265 ,  H01L21/762

CPC classification number: H01L27/0928 ,  H01L21/26513 ,  H01L21/76224 ,  H01L21/823892 ,  H01L27/10897 ,  H01L29/0688 ,  H01L29/1095 ,  H01L29/36

Abstract: Apparatuses and methods are disclosed. One such apparatus includes a well having a first type of conductivity formed within a semiconductor structure having a second type of conductivity. A boundary of the well intersects an active area of a tap to the well.

公开(公告)号：US11037928B2

公开(公告)日：2021-06-15

申请号：US16730169

申请日：2019-12-30

Applicant: Micron Technology, Inc.

Inventor： Michael Smith

IPC: H01L27/092 ,  H01L29/06 ,  H01L21/265 ,  H01L21/762 ,  H01L29/10 ,  H01L29/36 ,  H01L21/8238 ,  H01L27/108

Abstract: Apparatuses and methods are disclosed. One such apparatus includes a well having a first type of conductivity formed within a semiconductor structure having a second type of conductivity. A boundary of the well intersects an active area of a tap to the well.

公开(公告)号：US20190067271A1

公开(公告)日：2019-02-28

申请号：US16108413

申请日：2018-08-22

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Michael Smith

IPC: H01L27/02 ,  G11C16/16 ,  G11C16/04 ,  G11C16/08

CPC classification number: H01L27/0266 ,  G11C7/02 ,  G11C16/04 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/16 ,  G11C16/22

Abstract: Circuit-protection devices may include first and second circuit-protection units, a first gate having a first source/drain connected to a first node of the first circuit-protection unit, and a second gate having a first source/drain connected to a first node of the second circuit-protection unit, wherein a second source/drain of the first gate is connected to a second source/drain of the second gate.

公开(公告)号：US09991210B2

公开(公告)日：2018-06-05

申请号：US15218888

申请日：2016-07-25

Applicant: Micron Technology, Inc.

Inventor： Vladimir Mikhalev ,  Michael Smith ,  Henry J. Fulford ,  Puneet Sharma ,  Zia A. Shafi

IPC: H01L29/78 ,  H01L23/552 ,  H01L23/522 ,  H01L27/088 ,  H01L29/40 ,  H01L29/45 ,  H03K17/16 ,  H01L23/532

CPC classification number: H01L23/552 ,  H01L23/5225 ,  H01L23/5226 ,  H01L23/53271 ,  H01L27/088 ,  H01L29/402 ,  H01L29/404 ,  H01L29/45 ,  H01L29/7833 ,  H01L2924/0002 ,  H03K17/161 ,  H03K17/162 ,  H01L2924/00

Abstract: Semiconductor devices are described, along with methods and systems that include them. One such device includes a diffusion region in a semiconductor material, a terminal coupled to the diffusion region, and a field plate coupled to the terminal and extending from the terminal over the diffusion region to shield the diffusion region. Additional embodiments are also described.

公开(公告)号：US20180122808A1

公开(公告)日：2018-05-03

申请号：US15845729

申请日：2017-12-18

Applicant: Micron Technology, Inc.

Inventor： Michael Smith

IPC: H01L27/092 ,  H01L29/36 ,  H01L21/8238 ,  H01L21/762 ,  H01L21/265 ,  H01L29/06 ,  H01L29/10 ,  H01L27/108

CPC classification number: H01L27/0928 ,  H01L21/26513 ,  H01L21/76224 ,  H01L21/823892 ,  H01L27/10897 ,  H01L29/0688 ,  H01L29/1095 ,  H01L29/36

Abstract: Apparatuses and methods are disclosed. One such apparatus includes a well having a first type of conductivity formed within a semiconductor structure having a second type of conductivity. A boundary of the well intersects an active area of a tap to the well.

公开(公告)号：US09406623B2

公开(公告)日：2016-08-02

申请号：US14507573

申请日：2014-10-06

Applicant: Micron Technology, Inc.

Inventor： Vladimir Mikhalev ,  Michael Smith ,  Henry J. Fulford ,  Puneet Sharma ,  Zia A. Shafi

IPC: H01L23/552 ,  H01L23/522 ,  H01L27/088 ,  H01L29/40 ,  H01L29/45 ,  H03K17/16

CPC classification number: H01L23/552 ,  H01L23/5225 ,  H01L23/5226 ,  H01L23/53271 ,  H01L27/088 ,  H01L29/402 ,  H01L29/404 ,  H01L29/45 ,  H01L29/7833 ,  H01L2924/0002 ,  H03K17/161 ,  H03K17/162 ,  H01L2924/00

Abstract: Semiconductor devices are described, along with methods and systems that include them. One such device includes a diffusion region in a semiconductor material, a terminal coupled to the diffusion region, and a field plate coupled to the terminal and extending from the terminal over the diffusion region to shield the diffusion region. Additional embodiments are also described.

Abstract translation: 描述半导体器件以及包括它们的方法和系统。 一种这样的器件包括在半导体材料中的扩散区域，耦合到扩散区域的端子和耦合到端子并且从端子在扩散区域上延伸以屏蔽扩散区域的场板。 还描述了另外的实施例。

公开(公告)号：US20210111174A1

公开(公告)日：2021-04-15

申请号：US17128752

申请日：2020-12-21

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Michael Smith

IPC: H01L27/02 ,  G11C16/04 ,  G11C16/16 ,  G11C16/22 ,  G11C7/02

Abstract: Circuit-protection devices might include first and second circuit-protection units each comprising a first node and a second node, a first field-effect transistor having a first source/drain connected to the first node of the first circuit-protection unit, and a second field-effect transistor having a first source/drain connected to the first node of the second circuit-protection unit, wherein a second source/drain of the first field-effect transistor merges with a second source/drain of the second field-effect transistor.