公开(公告)号：US20140339648A1

公开(公告)日：2014-11-20

申请号：US14448198

申请日：2014-07-31

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Michael Smith ,  Vladimir Mikhalev ,  Puneet Sharma ,  Zia Alan Shafi ,  Henry Jim Fulford

IPC: H01L29/78

CPC classification number: H01L29/7833 ,  H01L21/266 ,  H01L27/105 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/423 ,  H01L29/6659

Abstract: A transistor includes a gate dielectric over a semiconductor having a first conductivity type, a control gate over the gate dielectric, source and drain regions having a second conductivity type in the semiconductor having the first conductivity type, and strips having the second conductivity type within the semiconductor having the first conductivity type and interposed between the control gate and at least one of the source and drain regions.

Abstract translation: 晶体管包括在具有第一导电类型的半导体上的栅极电介质，栅极电介质上的控制栅极，在具有第一导电类型的半导体中具有第二导电类型的源极和漏极区域，以及具有第二导电类型的条带 半导体具有第一导电类型并且插入在控制栅极和源极和漏极区域中的至少一个之间。

公开(公告)号：US20150021707A1

公开(公告)日：2015-01-22

申请号：US14507573

申请日：2014-10-06

Applicant: Micron Technology, Inc.

Inventor： Vladimir Mikhalev ,  Michael Smith ,  Henry J. Fulford ,  Puneet Sharma ,  Zia A. Shafi

IPC: H01L23/552 ,  H03K17/16 ,  H01L29/45 ,  H01L29/40 ,  H01L27/088

CPC classification number: H01L23/552 ,  H01L23/5225 ,  H01L23/5226 ,  H01L23/53271 ,  H01L27/088 ,  H01L29/402 ,  H01L29/404 ,  H01L29/45 ,  H01L29/7833 ,  H01L2924/0002 ,  H03K17/161 ,  H03K17/162 ,  H01L2924/00

Abstract: Semiconductor devices are described, along with methods and systems that include them. One such device includes a diffusion region in a semiconductor material, a terminal coupled to the diffusion region, and a field plate coupled to the terminal and extending from the terminal over the diffusion region to shield the diffusion region. Additional embodiments are also described.

Abstract translation: 描述半导体器件以及包括它们的方法和系统。 一种这样的器件包括在半导体材料中的扩散区域，耦合到扩散区域的端子和耦合到端子并且从端子在扩散区域上延伸以屏蔽扩散区域的场板。 还描述了另外的实施例。

公开(公告)号：US20160336276A1

公开(公告)日：2016-11-17

申请号：US15218888

申请日：2016-07-25

Applicant: Micron Technology, Inc.

Inventor： Vladimir Mikhalev ,  Michael Smith ,  Henry J. Fulford ,  Puneet Sharma ,  Zia A. Shafi

IPC: H01L23/552 ,  H03K17/16 ,  H01L29/78 ,  H01L23/532 ,  H01L29/40 ,  H01L23/522

CPC classification number: H01L23/552 ,  H01L23/5225 ,  H01L23/5226 ,  H01L23/53271 ,  H01L27/088 ,  H01L29/402 ,  H01L29/404 ,  H01L29/45 ,  H01L29/7833 ,  H01L2924/0002 ,  H03K17/161 ,  H03K17/162 ,  H01L2924/00

Abstract: Semiconductor devices are described, along with methods and systems that include them. One such device includes a diffusion region in a semiconductor material, a terminal coupled to the diffusion region, and a field plate coupled to the terminal and extending from the terminal over the diffusion region to shield the diffusion region. Additional embodiments are also described.

公开(公告)号：US09337333B2

公开(公告)日：2016-05-10

申请号：US14448198

申请日：2014-07-31

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Michael Smith ,  Vladimir Mikhalev ,  Puneet Sharma ,  Zia Alan Shafi ,  Henry Jim Fulford

IPC: H01L29/78 ,  H01L21/266 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L27/105

CPC classification number: H01L29/7833 ,  H01L21/266 ,  H01L27/105 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/423 ,  H01L29/6659

Abstract: A transistor includes a gate dielectric over a semiconductor having a first conductivity type, a control gate over the gate dielectric, source and drain regions having a second conductivity type in the semiconductor having the first conductivity type, and strips having the second conductivity type within the semiconductor having the first conductivity type and interposed between the control gate and at least one of the source and drain regions.

Abstract translation: 晶体管包括在具有第一导电类型的半导体上的栅极电介质，栅极电介质上的控制栅极，在具有第一导电类型的半导体中具有第二导电类型的源极和漏极区域，以及具有第二导电类型的条带 半导体具有第一导电类型并且插入在控制栅极和源极和漏极区域中的至少一个之间。

公开(公告)号：US09991210B2

公开(公告)日：2018-06-05

申请号：US15218888

申请日：2016-07-25

Applicant: Micron Technology, Inc.

Inventor： Vladimir Mikhalev ,  Michael Smith ,  Henry J. Fulford ,  Puneet Sharma ,  Zia A. Shafi

IPC: H01L29/78 ,  H01L23/552 ,  H01L23/522 ,  H01L27/088 ,  H01L29/40 ,  H01L29/45 ,  H03K17/16 ,  H01L23/532

CPC classification number: H01L23/552 ,  H01L23/5225 ,  H01L23/5226 ,  H01L23/53271 ,  H01L27/088 ,  H01L29/402 ,  H01L29/404 ,  H01L29/45 ,  H01L29/7833 ,  H01L2924/0002 ,  H03K17/161 ,  H03K17/162 ,  H01L2924/00

Abstract: Semiconductor devices are described, along with methods and systems that include them. One such device includes a diffusion region in a semiconductor material, a terminal coupled to the diffusion region, and a field plate coupled to the terminal and extending from the terminal over the diffusion region to shield the diffusion region. Additional embodiments are also described.

公开(公告)号：US09406623B2

公开(公告)日：2016-08-02

申请号：US14507573

申请日：2014-10-06

Applicant: Micron Technology, Inc.

Inventor： Vladimir Mikhalev ,  Michael Smith ,  Henry J. Fulford ,  Puneet Sharma ,  Zia A. Shafi

IPC: H01L23/552 ,  H01L23/522 ,  H01L27/088 ,  H01L29/40 ,  H01L29/45 ,  H03K17/16

CPC classification number: H01L23/552 ,  H01L23/5225 ,  H01L23/5226 ,  H01L23/53271 ,  H01L27/088 ,  H01L29/402 ,  H01L29/404 ,  H01L29/45 ,  H01L29/7833 ,  H01L2924/0002 ,  H03K17/161 ,  H03K17/162 ,  H01L2924/00

Abstract: Semiconductor devices are described, along with methods and systems that include them. One such device includes a diffusion region in a semiconductor material, a terminal coupled to the diffusion region, and a field plate coupled to the terminal and extending from the terminal over the diffusion region to shield the diffusion region. Additional embodiments are also described.

Abstract translation: 描述半导体器件以及包括它们的方法和系统。 一种这样的器件包括在半导体材料中的扩散区域，耦合到扩散区域的端子和耦合到端子并且从端子在扩散区域上延伸以屏蔽扩散区域的场板。 还描述了另外的实施例。