Apparatuses and methods for tracking victim rows

    公开(公告)号:US11984148B2

    公开(公告)日:2024-05-14

    申请号:US17470883

    申请日:2021-09-09

    CPC classification number: G11C11/40611 G11C11/4085 G11C11/4087

    Abstract: The address of victim rows may be determined based on rows that are accessed in a memory. The victim addresses may be stored and associated with a count for every time a victim row is “victimized.” When the count for a victim row reaches a threshold, the victim row may be refreshed to preserve data stored in the row. After the victim row has been refreshed, the count may be reset. When a victim row is accessed, the count may also be reset. The counts may be adjusted for closer victim rows (e.g., +/−1) at a faster rate than counts for more distant victim rows (e.g., +/−2). This may cause closer victim rows to be refreshed at a higher rate than more distant victim rows.

    Apparatuses and methods for staggered timing of skipped refresh operations

    公开(公告)号:US11610622B2

    公开(公告)日:2023-03-21

    申请号:US17226975

    申请日:2021-04-09

    Abstract: Embodiments of the disclosure are drawn to apparatuses and methods for staggering the timing of skipped refresh operations on a memory. Memory cells of memories may need to periodically perform refresh operations. In some instances, auto-refresh operations may be periodically skipped when charge retention characteristics of the memory cells of the memory exceed the auto-refresh frequency. To reduce peak current draw during refresh operations, the skipped refresh operations may be staggered across different portions of the memory. In one example, the skipped refresh operation may be staggered in time among memory dies of the memory to limit a number of memory dies that are performing an auto-refresh operation to a maximum number. In another example, the skipped refresh operation may be staggered in time among memory banks of a single memory array to limit a number of memory banks that are performing an auto-refresh operation to a maximum number.

    Semiconductor device with secure access key and associated methods and systems

    公开(公告)号:US11520711B2

    公开(公告)日:2022-12-06

    申请号:US17338534

    申请日:2021-06-03

    Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which security measures may be implemented to control access to a fuse array (or other secure features) of the memory devices based on a secure access key. In some cases, a customer may define and store a user-defined access key in the fuse array. In other cases, a manufacturer of the memory device may define a manufacturer-defined access key (e.g., an access key based on fuse identification (FID), a secret access key), where a host device coupled with the memory device may obtain the manufacturer-defined access key according to certain protocols. The memory device may compare an access key included in a command directed to the memory device with either the user-defined access key or the manufacturer-defined access key to determine whether to permit or prohibit execution of the command based on the comparison.

    APPARATUS WITH REFRESH MANAGEMENT MECHANISM

    公开(公告)号:US20220148645A1

    公开(公告)日:2022-05-12

    申请号:US17091969

    申请日:2020-11-06

    Abstract: Methods, apparatuses, and systems related to managing operations performed in response to refresh management (RFM) commands. A controller generates the RFM command for coordinating a refresh management operation targeted for implementation at an apparatus. The apparatus tracks refresh target set that includes refresh management target locations within the apparatus. According to the tracked refresh management target set, the apparatus selectively implements the targeted refresh management operation and/or a response operation in addition to or as a replacement for the targeted refresh management operation.

    Apparatuses and methods for tracking victim rows

    公开(公告)号:US11158364B2

    公开(公告)日:2021-10-26

    申请号:US16428625

    申请日:2019-05-31

    Abstract: The address of victim rows may be determined based on rows that are accessed in a memory. The victim addresses may be stored and associated with a count for every time a victim row is “victimized.” When the count for a victim row reaches a threshold, the victim row may be refreshed to preserve data stored in the row. After the victim row has been refreshed, the count may be reset. When a victim row is accessed, the count may also be reset. The counts may be adjusted for closer victim rows (e.g., +/−1) at a faster rate than counts for more distant victim rows (e.g., +/−2). This may cause closer victim rows to be refreshed at a higher rate than more distant victim rows.

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