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    ATOMIC LAYER DEPOSITION APPARATUS
    15.
    发明申请
    ATOMIC LAYER DEPOSITION APPARATUS 有权
    原子层沉积装置

    公开(公告)号：US20120006265A1

    公开(公告)日：2012-01-12

    申请号：US13235855

    申请日：2011-09-19

    申请人： BARRY L. CHIN ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

    发明人： BARRY L. CHIN ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

    IPC分类号： C23C16/455

    CPC分类号： C23C16/45544 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45551 ,  C23C16/4583

    摘要： A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.

    摘要翻译： 描述了用于原子层沉积（ALD）的方法和装置。 在一个实施例中，一种装置包括具有连续的内部容积的真空室主体，其包括与第二沉积区域间隔开的第一沉积区域，所述室主体具有可操作以最小化第一和第二沉积物之间的气体混合的特征 区域，形成在所述室主体中并且定位成优先地将气体脉冲至所述第一沉积区域的第一气体端口，以使得能够在所述第一沉积区域中执行第一沉积工艺，以及形成在所述室主体中并定位成 优选提供脉冲气体到第二沉积区域以使得能够在第二沉积区域中进行第二沉积工艺。

    Atomic layer deposition apparatus
    16.
    发明授权
    Atomic layer deposition apparatus 有权
    原子层沉积装置

    公开(公告)号：US08626330B2

    公开(公告)日：2014-01-07

    申请号：US13235855

    申请日：2011-09-19

    申请人： Barry L. Chin ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

    发明人： Barry L. Chin ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

    IPC分类号： G06F19/00 ,  C23C16/00

    CPC分类号： C23C16/45544 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45551 ,  C23C16/4583

    摘要： A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.

    摘要翻译： 描述了用于原子层沉积（ALD）的方法和装置。 在一个实施例中，一种装置包括具有连续的内部容积的真空室主体，其包括与第二沉积区域间隔开的第一沉积区域，所述室主体具有可操作以最小化第一和第二沉积物之间的气体混合的特征 区域，形成在所述室主体中并且定位成优先地将气体脉冲至所述第一沉积区域的第一气体端口，以使得能够在所述第一沉积区域中执行第一沉积工艺，以及形成在所述室主体中并定位成 优选提供脉冲气体到第二沉积区域以使得能够在第二沉积区域中进行第二沉积工艺。

    Methods and systems of transferring a substrate to minimize heat loss
    18.
    发明申请
    Methods and systems of transferring a substrate to minimize heat loss 有权
    转移衬底以最小化热损失的方法和系统

    公开(公告)号：US20100173439A1

    公开(公告)日：2010-07-08

    申请号：US12319223

    申请日：2009-01-03

    申请人： Lawrence Chung-Lai Lei ,  Alfred Mak ,  Rex Liu ,  Kon Park ,  Tzy-Chung Terry WU ,  Simon Zhu ,  Gene Shin ,  Xiaoming Wang

    发明人： Lawrence Chung-Lai Lei ,  Alfred Mak ,  Rex Liu ,  Kon Park ,  Tzy-Chung Terry WU ,  Simon Zhu ,  Gene Shin ,  Xiaoming Wang

    IPC分类号： H01L21/677 ,  H01L31/18

    CPC分类号： H01L21/6719 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/67706 ,  H01L21/67748 ,  H01L21/67754 ,  Y10S414/135

    摘要： A method of transferring one or more substrates between process modules or load lock stations while minimizing heat loss is provided. In some embodiments the method comprising the steps of: identifying a destination location D1 for a substrate S1 present at an initial processing location P1; if the destination location D1 is occupied with a substrate S2, maintaining the substrate S1 at the initial processing location P1; and if the destination location D1 is available, transferring the substrate S1 to the destination location D1. In accordance with additional embodiments, the method is carried out on a system for processing substrates which includes two or more process modules, a substrate handling robot, a load lock chamber, and a transverse substrate handler. The transverse substrate handler includes mobile transverse chambers configured to convey substrates to process modules, wherein each mobile transverse chamber is configured to maintain a specified gas condition during the conveyance of the substrates. The transverse substrate handler further includes a rail for supporting the mobile transverse chambers, wherein the rail is positioned adjacent to entry of the process modules, and drive systems for moving the mobile transverse chambers on the rail.

    摘要翻译： 提供了一种在过程模块或加载锁定站之间传送一个或多个基板同时最小化热损失的方法。 在一些实施例中，该方法包括以下步骤：识别存在于初始处理位置P1的衬底S1的目的地位置D1; 如果目的地位置D1被基板S2占用，则将基板S1保持在初始处理位置P1; 并且如果目的地位置D1可用，则将基板S1传送到目的地位置D1。 根据另外的实施例，该方法在用于处理基板的系统上进行，该系统包括两个或更多个处理模块，基板处理机器人，负载锁定室和横向基板处理器。 横向基板处理器包括被配置为将基板输送到处理模块的移动横向室，其中每个移动横向室被构造成在输送基板期间保持特定的气体状态。 横向基板处理器还包括用于支撑移动横向室的轨道，其中轨道邻近进程模块的进入定位，以及用于将移动横向室移动到轨道上的驱动系统。

    Dual gas faceplate for a showerhead in a semiconductor wafer processing system
    19.
    发明申请
    Dual gas faceplate for a showerhead in a semiconductor wafer processing system 审中-公开
    用于半导体晶片处理系统中喷头的双气面板

    公开(公告)号：US20060021703A1

    公开(公告)日：2006-02-02

    申请号：US10901768

    申请日：2004-07-29

    申请人： Salvador Umotoy ,  Lawrence Chung-Lai Lei ,  Anh Nguyen ,  Steve Chiao ,  Hanh Nguyen

    发明人： Salvador Umotoy ,  Lawrence Chung-Lai Lei ,  Anh Nguyen ,  Steve Chiao ,  Hanh Nguyen

    IPC分类号： C23C16/00 ,  C23F1/00

    CPC分类号： C23C16/45565 ,  H01J37/3244 ,  H01J37/32522

    摘要： A faceplate for a showerhead of a semiconductor wafer processing system is provided. The faceplate has a plurality of gas passageways to provide a plurality of gases to the process region without commingling those gases before they reach the processing region within a reaction chamber. The showerhead includes a faceplate and a gas distribution manifold assembly. The faceplate defines a plurality of first gas holes that carry a first gas from the manifold assembly through the faceplate to the process region, and a plurality of channels that couple a plurality of second gas holes to a radial plenum that receives the second gas from the manifold assembly. The faceplate and the manifold assembly are each fabricated from a substantially solid nickel material.

    摘要翻译： 提供了一种用于半导体晶片处理系统的喷头的面板。 面板具有多个气体通道，以在工艺区域内提供多个气体，而不会在这些气体到达反应室内的处理区域之前混合。 喷头包括面板和气体分配歧管组件。 面板限定了多个第一气体孔，其将来自歧管组件的第一气体通过面板传送到处理区域，以及将多个第二气体孔连接到径向增压室的多个通道，其将从第二气体接收第二气体 歧管组件。 面板和歧管组件各自由基本上固体的镍材料制成。