公开(公告)号：US11124888B2

公开(公告)日：2021-09-21

申请号：US16334098

申请日：2017-09-20

Applicant: MacDermid Enthone Inc.

Inventor： Thomas Richardson ,  Kyle Whitten ,  Vincent Paneccasio, Jr. ,  John Commander ,  Richard Hurtubise

IPC: C25D3/38 ,  C25D7/12 ,  C08G65/24 ,  C08G65/333 ,  C08G73/06 ,  H01L23/00

Abstract: An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor, and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.

公开(公告)号：US20190390356A1

公开(公告)日：2019-12-26

申请号：US16334168

申请日：2017-09-21

Applicant: MacDermid Enthone Inc.

Inventor： Vincent Paneccasio, Jr. ,  Kyle Whitten ,  Richard Hurtubise ,  John Commander ,  Eric Rouya

IPC: C25D3/38 ,  C25D7/12 ,  C25D17/00

Abstract: An electrolytic plating composition for superfilling submicron features in a semiconductor integrated circuit device and a method of using the same. The composition comprises (a) a source of copper ions to electrolytically deposit copper onto the substrate and into the electrical interconnect features, and (b) a suppressor comprising at least three amine sites, said polyether comprising a block copolymer substituent comprising propylene oxide (PO) repeat units and ethylene oxide (EO) repeat units, wherein the number average molecular weight of the suppressor compound is between about 1,000 and about 20,000.

公开(公告)号：US20180355502A1

公开(公告)日：2018-12-13

申请号：US15617482

申请日：2017-06-08

Applicant: MacDermid Enthone Inc.

Inventor： Elie Najjar ,  John Commander ,  Thomas Richardson ,  Tao Chi Liu ,  Jiang Chiang

IPC: C25D7/12 ,  C25D3/38 ,  C25D5/02 ,  C25D5/34 ,  H01L21/288 ,  H01L23/00 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: C25D7/123 ,  C25D3/38 ,  C25D5/02 ,  C25D5/34 ,  H01L21/2885 ,  H01L21/76879 ,  H01L23/3114 ,  H01L23/5226 ,  H01L23/53228 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/11462 ,  H01L2224/13005 ,  H01L2224/13017 ,  H01L2224/13147 ,  H01L2924/20641 ,  H01L2924/20642 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753

Abstract: Features such as bumps, pillars and/or vias can be plated best using current with either a square wave or square wave with open circuit wave form. Using the square wave or square wave with open circuit wave forms of plating current, produces features such as bumps, pillars, and vias with optimum shape and filling characteristics. Specifically, vias are filled uniformly and completely, and pillars are formed without rounded tops, bullet shape, or waist curves. In the process, the metalizing substrate is contacted with an electrolytic copper deposition composition. The deposition composition comprises a source of copper ions, an acid component selected from among an inorganic acid, an organic sulfonic acid, and mixtures thereof, an accelerator, a suppressor, a leveler, and chloride ions.