公开(公告)号：US20210222314A1

公开(公告)日：2021-07-22

申请号：US17220540

申请日：2021-04-01

Applicant: MacDermid Enthone Inc.

Inventor： John Commander ,  Vincent Paneccasio, JR. ,  Eric Rouya ,  Kyle Whitten ,  Shaopeng Sun ,  Jianwen Han

IPC: C25D7/12 ,  C25D3/16 ,  C25D3/56

Abstract: Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising sub-micron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

公开(公告)号：US20190010624A1

公开(公告)日：2019-01-10

申请号：US15641756

申请日：2017-07-05

Applicant: MacDermid Enthone Inc.

Inventor： John Commander ,  Kyle Whitten ,  Vincent Paneccasio, JR. ,  Shaopeng Sun ,  Eric Yakobson

IPC: C25D3/16 ,  H01L21/768 ,  C25D5/02 ,  C25D7/12

Abstract: Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.

公开(公告)号：US11434578B2

公开(公告)日：2022-09-06

申请号：US17220540

申请日：2021-04-01

Applicant: MacDermid Enthone Inc.

Inventor： John Commander ,  Vincent Paneccasio, Jr. ,  Eric Rouya ,  Kyle Whitten ,  Shaopeng Sun ,  Jianwen Han

IPC: C25D3/16 ,  C25D7/12 ,  C25D3/56 ,  C25D5/18

Abstract: Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising sub-micron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.

公开(公告)号：US20220064811A1

公开(公告)日：2022-03-03

申请号：US17416703

申请日：2020-01-31

Applicant: MacDermid Enthone Inc.

Inventor： Eric Yakobson ,  Shaopeng Sun ,  Elie Najjar ,  Thomas Richardson ,  Vincent Paneccasio, Jr. ,  Wenbo Shao ,  Kyle Whitten

IPC: C25D3/18 ,  H01L21/768 ,  H01L21/288 ,  C25D7/12 ,  C25D5/02 ,  C25D21/10

Abstract: A nickel electrodeposition composition for via fill or barrier nickel interconnect fabrication comprising: (a) a source of nickel ions; (b) one or more polarizing additives; and (c) one or more depolarizing additives. The nickel electrodeposition composition may include various additives, including suitable acids, surfactants, buffers, and/or stress modifiers to produce bottom-up filling of vias and trenches.

公开(公告)号：US11230778B2

公开(公告)日：2022-01-25

申请号：US16713871

申请日：2019-12-13

Applicant: MacDermid Enthone Inc.

Inventor： Shaopeng Sun ,  Kyle Whitten ,  Stephan Braye ,  Elie Najjar

IPC: C25D3/16 ,  C25D5/02 ,  C25D7/12 ,  C25D5/18

Abstract: An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.

公开(公告)号：US20200040478A1

公开(公告)日：2020-02-06

申请号：US15739314

申请日：2016-06-30

Applicant: MacDermid Enthone Inc.

Inventor： John Commander ,  Vincent Paneccasio, Jr. ,  Eric Rouya ,  Kyle Whitten ,  Shaopeng Sun

IPC: C25D7/12 ,  C25D3/56 ,  C25D3/16

Abstract: Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising submicron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.