公开(公告)号：US20230407467A1

公开(公告)日：2023-12-21

申请号：US18242599

申请日：2023-09-06

Applicant: MacDermid Enthone Inc.

Inventor： Richard W. Hurtubise ,  Eric Yakobson ,  Shaopeng Sun ,  Taylor L. Wilkins ,  Elie H. Najjar ,  Wenbo Shao

IPC: C23C16/40 ,  C23C16/02 ,  C23C14/08 ,  C23C14/02 ,  C25D3/00

CPC classification number: C23C16/403 ,  C23C16/02 ,  C23C14/081 ,  C23C14/02 ,  C25D3/00

Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.

公开(公告)号：US20220259724A1

公开(公告)日：2022-08-18

申请号：US17665871

申请日：2022-02-07

Applicant: MacDermid Enthone Inc.

Inventor： Richard W. Hurtubise ,  Eric Yakobson ,  Shaopeng Sun ,  Taylor L. Wilkins ,  Elie H. Najjar ,  Wenbo Shao

IPC: C23C16/40 ,  C23C14/02 ,  C23C14/08 ,  C23C16/02

Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.

公开(公告)号：US12270121B2

公开(公告)日：2025-04-08

申请号：US17416703

申请日：2020-01-31

Applicant: MacDermid Enthone Inc.

Inventor： Eric Yakobson ,  Shaopeng Sun ,  Elie Najjar ,  Thomas Richardson ,  Vincent Paneccasio, Jr. ,  Wenbo Shao ,  Kyle Whitten

IPC: C25D3/18 ,  C25D5/02 ,  C25D7/12 ,  C25D21/10 ,  H01L21/288 ,  H01L21/768

Abstract: A nickel electrodeposition composition for via fill or barrier nickel interconnect fabrication comprising: (a) a source of nickel ions; (b) one or more polarizing additives; and (c) one or more depolarizing additives. The nickel electrodeposition composition may include various additives, including suitable acids, surfactants, buffers, and/or stress modifiers to produce bottom-up filling of vias and trenches.

公开(公告)号：US20220064811A1

公开(公告)日：2022-03-03

申请号：US17416703

申请日：2020-01-31

Applicant: MacDermid Enthone Inc.

Inventor： Eric Yakobson ,  Shaopeng Sun ,  Elie Najjar ,  Thomas Richardson ,  Vincent Paneccasio, Jr. ,  Wenbo Shao ,  Kyle Whitten

IPC: C25D3/18 ,  H01L21/768 ,  H01L21/288 ,  C25D7/12 ,  C25D5/02 ,  C25D21/10

Abstract: A nickel electrodeposition composition for via fill or barrier nickel interconnect fabrication comprising: (a) a source of nickel ions; (b) one or more polarizing additives; and (c) one or more depolarizing additives. The nickel electrodeposition composition may include various additives, including suitable acids, surfactants, buffers, and/or stress modifiers to produce bottom-up filling of vias and trenches.

公开(公告)号：US12157944B2

公开(公告)日：2024-12-03

申请号：US18242599

申请日：2023-09-06

Applicant: MacDermid Enthone Inc.

Inventor： Richard W. Hurtubise ,  Eric Yakobson ,  Shaopeng Sun ,  Taylor L Wilkins ,  Elie H. Najjar ,  Wenbo Shao

IPC: C25D3/00 ,  C23C14/02 ,  C23C14/08 ,  C23C16/02 ,  C23C16/40

Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.

公开(公告)号：US11846018B2

公开(公告)日：2023-12-19

申请号：US17665871

申请日：2022-02-07

Applicant: MacDermid Enthone Inc.

Inventor： Richard W. Hurtubise ,  Eric Yakobson ,  Shaopeng Sun ,  Taylor L. Wilkins ,  Elie H. Najjar ,  Wenbo Shao

IPC: C23C14/02 ,  C23C16/02 ,  C25D3/00 ,  C23C16/40 ,  C23C14/08

CPC classification number: C23C16/403 ,  C23C14/02 ,  C23C14/081 ,  C23C16/02 ,  C25D3/00

Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.

公开(公告)号：US10103029B2

公开(公告)日：2018-10-16

申请号：US15148738

申请日：2016-05-06

Applicant: MacDermid Enthone Inc.

Inventor： Thomas B. Richardson ,  Joseph A. Abys ,  Wenbo Shao ,  Chen Wang ,  Vincent Paneccasio ,  Cai Wang ,  Sean Xuan Lin ,  Theodore Antonellis

IPC: H01L21/28 ,  H01L21/288 ,  C25D3/38 ,  C25D5/18 ,  H01L21/768 ,  C25D7/12 ,  C25D5/02

Abstract: A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.