Method of distortion compensation by irradiation of adaptive lithography membrane masks
    13.
    发明授权
    Method of distortion compensation by irradiation of adaptive lithography membrane masks 失效
    通过适应光刻膜掩模照射的失真补偿方法

    公开(公告)号:US06440619B1

    公开(公告)日:2002-08-27

    申请号:US09578572

    申请日:2000-05-25

    申请人: Martin Feldman

    发明人: Martin Feldman

    IPC分类号: G03C500

    摘要: Techniques are disclosed to compensate for distortions in lithography by locally heating the membrane in a lithographic mask. The techniques may be used both to shrink and to expand areas of the mask locally, in order to adjust for varying magnitudes and signs of distortion. In one embodiment the correction method comprises two steps: (1) A send-ahead wafer is exposed and measured by conventional means to determine the overlay errors at several points throughout the field. (2) During exposure of subsequent wafers, calibrated beams of light are focused on the mask. The heating from the absorbed light produces displacements that compensate for the overlay errors measured with the send-ahead wafer. Any source of distortion may be corrected—for example, distortion appearing on the mask initially, distortion that only develops on the mask over time, or distortion on the wafer. In another embodiment, a reference pattern is formed on the membrane as a means of measuring mask distortion, and the heat input distribution needed to correct distortion is determined by subsequent measurements of the reference pattern. In this alternative embodiment, any source of distortion in the mask may be corrected.

    摘要翻译: 公开了通过局部加热光刻掩模中的膜来补偿光刻中的变形的技术。 这些技术可以同时用于收缩和局部扩大掩模的区域,以便调整变化的幅度和失真的迹象。 在一个实施例中,校正方法包括两个步骤:(1)通过传统手段对发射晶片进行曝光和测量,以确定整个场中的几个点处的覆盖误差。 (2)在后续晶片曝光期间,校准光束聚焦在掩模上。 来自吸收光的加热产生位移,补偿由发射晶片测量的重叠误差。 可以校正任何失真源 - 例如,最初出现在掩模上的失真,仅在掩模上随时间发生的失真或晶片上的失真。 在另一个实施例中,作为测量掩模失真的手段在膜上形成参考图案,并且通过参考图案的后续测量来确定校正失真所需的热输入分布。 在该替代实施例中,可以校正掩模中的任何失真源。

    Three-dimensional microstructures and methods for making
three-dimensional microstructures
    14.
    发明授权
    Three-dimensional microstructures and methods for making three-dimensional microstructures 失效
    制作三维微结构的三维微结构和方法

    公开(公告)号:US6018422A

    公开(公告)日:2000-01-25

    申请号:US165789

    申请日:1998-10-02

    申请人: Martin Feldman

    发明人: Martin Feldman

    IPC分类号: G02B3/00 G02B23/00 G02B27/10

    摘要: Methods are disclosed for making microstructures. In one method, the resist layer is reversibly deformed during exposure. When the resist is flattened and developed after exposure, non-vertical features result that are not obtainable through other existing means. One application of this method is to make nested cones suitable for use as a highly efficient x-ray lens. In another disclosed method, "halftone" lithography is used to generate microstructures having features whose height may vary continuously. One application of this method is to make a novel telescope array, a thin film having telescopic magnification properties.

    摘要翻译: 公开了制造微结构的方法。 在一种方法中,抗蚀剂层在曝光期间可逆地变形。 当抗蚀剂在曝光后变平且显影时,不能通过其他现有方法获得非垂直特征。 该方法的一个应用是使嵌套锥体适合用作高效x射线透镜。 在另一公开的方法中,使用“半色调”光刻来产生具有其高度可连续变化的特征的微结构。 该方法的一个应用是制造一种新型的望远镜阵列,具有伸缩放大特性的薄膜。

    Scanning systems for high resolution e-beam and X-ray lithography
    15.
    发明授权
    Scanning systems for high resolution e-beam and X-ray lithography 失效
    用于高分辨率电子束和X射线光刻的扫描系统

    公开(公告)号:US5424549A

    公开(公告)日:1995-06-13

    申请号:US136300

    申请日:1993-10-14

    申请人: Martin Feldman

    发明人: Martin Feldman

    摘要: An electron-beam lithography apparatus and method, including an electron source with a mask or photocathode for generating a patterned electron beam; an electron-sensitive resist layer; a conductive plate with a slit, located between the electron source and the resist layer, with the patterned electron beam passing only through the slit; an electric field between the electron source and the conductive plate to accelerate electrons, with the conductive plate causing the electric field between the plate and the resist to be substantially zero; a magnetic field between the electron source and the resist, to focus electrons on the resist; and alignment device for synchronously scanning the mask or photocathode and the resist at the same velocity relative to the slit and to the electron source, and at zero velocity relative to each other, so that substantially all of the pattern of the patterned electron beam is imaged on the resist without substantial change in size.

    摘要翻译: 一种电子束光刻设备和方法,包括具有用于产生图案化电子束的掩模或光电阴极的电子源; 电子敏感抗蚀剂层; 具有狭缝的导电板,位于电子源和抗蚀剂层之间,图案化电子束仅通过狭缝; 电子源和导电板之间的电场以加速电子,导电板使得板和抗蚀剂之间的电场基本上为零; 电子源和抗蚀剂之间的磁场,以将电子聚焦在抗蚀剂上; 以及对准装置,用于以相对于狭缝和电子源的相同速度同时扫描掩模或光电阴极和抗蚀剂,并且以相对于彼此的零速度,使得图案化电子束的基本上所有图案被成像 在抗蚀剂上没有大的变化。

    Lithography mask inspection
    16.
    发明授权
    Lithography mask inspection 失效
    光刻面膜检查

    公开(公告)号:US5123743A

    公开(公告)日:1992-06-23

    申请号:US486504

    申请日:1990-02-28

    申请人: Martin Feldman

    发明人: Martin Feldman

    IPC分类号: G03F1/22 G03F1/84 G03F7/20

    CPC分类号: G03F1/84 G03F7/70616 G03F1/22

    摘要: A method of detecting defects in a lithography mask by exposing a first mask onto a positive resist, and a second, ostensibly identical mask onto a negative resist. Remaining particles of resist after development correspond to spots in the first mask, or to holes in the second mask. The process may be repeated with the tones of the resists reversed to detect holes in the first mask, or spots in the second mask.

    摘要翻译: 一种通过将第一掩模曝露在正性抗蚀剂上的第二表面上相同的掩模来检测光刻掩模中的缺陷的方法。 显影后抗蚀剂的剩余颗粒对应于第一掩模中的斑点或第二掩模中的孔。 可以重复该过程,其中抗蚀剂的色调反转以检测第一掩模中的孔或第二掩模中的斑点。

    CONTACT-TYPE ENDOSCOPE SERS PROBE, AND RELATED METHODS

    公开(公告)号:US20190008391A1

    公开(公告)日:2019-01-10

    申请号:US16106722

    申请日:2018-08-21

    摘要: A contact-type endoscope surface enhanced Raman scattering (SERS) probe includes a gradient-index (GRIN) lens, a transparent substrate adhered to the GRIN lens, and a rough metallic layer adhered to an opposite side of the transparent substrate from the GRIN lens. The GRIN lens focuses light from a Raman spectrometer onto the rough metallic layer, and the rough metallic layer is positioned at the distal end of the contact-type endoscope SERS probe.

    CONTACT-TYPE ENDOSCOPE SERS PROBE, AND RELATED METHODS
    20.
    发明申请
    CONTACT-TYPE ENDOSCOPE SERS PROBE, AND RELATED METHODS 审中-公开
    接触型内窥镜探针和相关方法

    公开(公告)号:US20150335249A1

    公开(公告)日:2015-11-26

    申请号:US14721953

    申请日:2015-05-26

    摘要: A contact-type endoscope surface enhanced Raman scattering (SERS) probe includes a gradient-index (GRIN) lens, a transparent substrate adhered to the GRIN lens, and a rough metallic layer adhered to an opposite side of the transparent substrate from the GRIN lens. The GRIN lens focuses light from a Raman spectrometer onto the rough metallic layer, and the rough metallic layer is positioned at the distal end of the contact-type endoscope SERS probe.

    摘要翻译: 接触型内窥镜表面增强拉曼散射(SERS)探针包括梯度折射率(GRIN)透镜,粘附到GRIN透镜的透明基板和从GRIN透镜粘附到透明基板的相反侧的粗糙金属层 。 GRIN透镜将来自拉曼光谱仪的光聚焦到粗糙的金属层上,粗糙的金属层位于接触型内窥镜SERS探针的远端。