Magnetoresistive device and method of preparing the same
    13.
    发明授权
    Magnetoresistive device and method of preparing the same 失效
    磁阻装置及其制备方法

    公开(公告)号:US5680091A

    公开(公告)日:1997-10-21

    申请号:US524746

    申请日:1995-09-07

    摘要: A magnetoresistive device includes a substrate and a magnetic film which is formed by alternately stacking magnetic and non-magnetic layers with each other on the substrate. The substrate is prepared to have a texture on its surface, and the magnetic film is formed on this substrate so that a texture is formed along the interface between the magnetic and non-magnetic layers. The texture can be an atomic level texture with step features dimensioned dependent upon the lattice constant, or may be an etched texture of features having desired dimensions in a specified range.

    摘要翻译: 磁阻装置包括基板和通过在基板上彼此交替堆叠磁性和非磁性层而形成的磁性膜。 准备基板在其表面上具有纹理,并且在该基板上形成磁性膜,使得沿着磁性层和非磁性层之间的界面形成纹理。 纹理可以是具有取决于晶格常数的步长特征的原子级结构,或者可以是具有在指定范围内具有期望尺寸的特征的蚀刻纹理。

    Magnetoresistive film
    14.
    发明授权
    Magnetoresistive film 失效
    磁阻膜

    公开(公告)号:US5620784A

    公开(公告)日:1997-04-15

    申请号:US511012

    申请日:1995-08-03

    摘要: A magnetoresistive film includes, arranged in the following order, a substrate, a first ferromagnetic layer, a non-magnetic metal film, and a second ferromagnetic layer which has a coercive force different from that of the first ferromagnetic layer. The magnetoresistive film has an uneven number of inflection point(s) in its magnetization hysteresis curve in the process of magnetization transition from a first saturation magnetization state to a second saturation magnetization state, with a magnetic field change quantity Hb and a magnetic field change quantity Ha being in the following relation:Ha/Hb.ltoreq.1where Ha and Hb are respectively expressed as Ha=.vertline.H.sub.2 -H.sub.0 .vertline. and Hb=.vertline.H.sub.1 -H.sub.0 .vertline., with H.sub.0, H.sub.1 and H.sub.2 respectively representing the magnetic field at the intermediate inflection point, the magnetic field corresponding to 95% of said first saturation magnetization, and the magnetic field corresponding to 95% of said second saturation magnetization after transition.

    摘要翻译: 磁阻膜包括按照以下顺序布置基板,第一铁磁层,非磁性金属膜和具有与第一铁磁层不同的矫顽力的第二铁磁层。 磁阻膜在从第一饱和磁化状态到第二饱和磁化状态的磁化转变过程中的磁化滞后曲线中具有不均匀的拐点数,磁场变化量Hb和磁场变化量 Ha的关系如下:Ha / Hb其中Ha和Hb分别表示为Ha = | H2-H0 | 和Hb = | H1-H0 |,其中H0,H1和H2分别表示中间拐点处的磁场,对应于所述第一饱和磁化强度的95%的磁场,对应于所述第二饱和磁化强度的95%的磁场 过渡后的饱和磁化强度。