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    Methods and assays for treating subjects with SHANK3 deletion, mutation or reduced expression
    11.
    发明授权
    Methods and assays for treating subjects with SHANK3 deletion, mutation or reduced expression 有权
    用SHANK3缺失，突变或降低表达治疗受试者的方法和测定法

    公开(公告)号：US08691762B2

    公开(公告)日：2014-04-08

    申请号：US13425633

    申请日：2012-03-21

    申请人： Joseph Buxbaum ,  Takeshi Sakurai ,  Ozlem Gunal

    发明人： Joseph Buxbaum ,  Takeshi Sakurai ,  Ozlem Gunal

    IPC分类号： A61K38/30

    CPC分类号： A61K49/0008 ,  A61K31/00 ,  A61K38/06 ,  A61K38/27 ,  A61K38/30 ,  G01N33/53 ,  G01N2333/65 ,  G01N2333/72

    摘要： Methods and assays are disclosed for treating subjects with 22q13 deletion syndrome or SHANK3 deletion or duplication, mutation or reduced expression, where the methods comprise administering to the subject insulin-like growth factor 1 (IGF-1), IGF-1-derived peptide or analog, growth hormone, an AMPAkine, a compound that directly or indirectly enhances glutamate neurotransmission, including by inhibiting inhibitory (most typically GABA) transmission, or an agent that activates the growth hormone receptor or the insulin-like growth factor 1 (IGF-1) receptor, or a downstream signaling pathway thereof.

    摘要翻译： 公开了用于治疗具有22q13缺失综合征或SHANK3缺失或复制，突变或降低表达的受试者的方法和测定法，其中所述方法包括对受试者施用胰岛素样生长因子1（IGF-1），IGF-1衍生的肽或 类似物，生长激素，AMPAkine，直接或间接增强谷氨酸神经传递的化合物，包括通过抑制（最典型的GABA）传递，或激活生长激素受体或胰岛素样生长因子1（IGF-1 ）受体或其下游信号传导途径。

    COOLING STRUCTURE FOR VEHICLE POWER SOURCE UNIT
    12.
    发明申请
    COOLING STRUCTURE FOR VEHICLE POWER SOURCE UNIT 审中-公开
    车用电源单元的冷却结构

    公开(公告)号：US20110222240A1

    公开(公告)日：2011-09-15

    申请号：US13129553

    申请日：2009-10-23

    申请人： Masao Kawata ,  Harumi Takedomi ,  Takeshi Sakurai

    发明人： Masao Kawata ,  Harumi Takedomi ,  Takeshi Sakurai

    IPC分类号： H05K7/20

    CPC分类号： B60L3/00 ,  B60L50/64 ,  B60L58/26 ,  B60L2210/10 ,  H01M2/1083 ,  H01M10/613 ,  H01M10/625 ,  H01M10/6551 ,  H01M10/6563 ,  H01M10/6566 ,  H01M10/667 ,  Y02T10/7005 ,  Y02T10/705 ,  Y02T10/7216

    摘要： An electrical component disposed on the top of battery modules includes an electrical component case for accommodating an inverter and a DC/DC converter, and heat sink units attached to the electrical component case on the side of the electrical component case opposite to the side with the battery modules, and constituted of a heat radiating plate having a plurality of radiating fins. In addition, a cooling path has a first cooling path for cooling the battery modules using cooling wind, and a second cooling path for cooling the heat sink units using the cooling wind having passed through the first cooling path. With this arrangement, there is provided a cooling structure for a vehicle power source unit capable of cooling the battery and the electrical component including the inverter with a compact configuration.

    摘要翻译： 设置在电池模块顶部的电气部件包括用于容纳逆变器和DC / DC转换器的电气部件壳体，以及附接到电气部件壳体的电气部件壳体的与侧面相反的一侧的散热器单元， 电池模块，并且由具有多个散热片的散热板构成。 此外，冷却路径具有用于使用冷却风冷却电池模块的第一冷却路径，以及使用已经通过第一冷却路径的冷却风来冷却散热器单元的第二冷却路径。 通过这种布置，提供了一种能够以紧凑的结构冷却电池和包括逆变器的电气部件的车辆用电源单元的冷却结构。

    BROADBAND REFLECTING MIRROR
    14.
    发明申请
    BROADBAND REFLECTING MIRROR 审中-公开
    宽带反光镜

    公开(公告)号：US20110096391A1

    公开(公告)日：2011-04-28

    申请号：US12997612

    申请日：2009-06-30

    申请人： Toshimasa Kanai ,  Takeshi Sakurai

    发明人： Toshimasa Kanai ,  Takeshi Sakurai

    IPC分类号： G02B5/28

    CPC分类号： G02B5/0825 ,  F24S23/77 ,  F24S23/79 ,  F24S23/82 ,  F24S2023/86 ,  Y02E10/40

    摘要： To provide a broadband reflecting mirror having high reflectance within a wavelength band of 400 nm to 2500 nm and having excellent thermal resistance and damage resistance. A broadband reflecting mirror 1 for reflecting light within a wavelength band of 400 nm to 2500 nm includes: a first reflective layered coating 3 for reflecting light in a short wavelength side of the wavelength band of 400 nm to 2500 nm, the first reflective layered coating including first high-refractive index material and first low-refractive index material layers alternately stacked one on another; and a second reflective layered coating 4 for reflecting light in a long wavelength side of the wavelength band of 400 nm to 2500 nm, the second reflective layered coating including second high-refractive index material and second low-refractive index material layers alternately stacked one on another, wherein the first reflective layered coating 3 is disposed on the light-incident side of the broadband reflecting mirror and the second reflective layered coating 4 is disposed at a position where light having passed through the first reflective layered coating 3 can be reflected, and wherein the first high-refractive index material layer is formed of at least one material selected from the group consisting of niobium oxide, titanium oxide, zirconium oxide, tantalum oxide, hafnium oxide, silicon nitride, yttrium oxide and indium tin oxide, the first low-refractive index material layer is formed of at least one material selected from the group consisting of silicon oxide and magnesium fluoride, the second high-refractive index material layer is formed of at least one material selected from the group consisting of silicon and germanium, and the second low-refractive index material layer is formed of at least one material selected from the group consisting of silicon oxide and magnesium fluoride.

    摘要翻译： 提供在400nm至2500nm的波长带内具有高反射率的宽带反射镜并具有优异的耐热性和耐损伤性。 用于反射400nm至2500nm的波长带内的光的宽带反射镜1包括：用于反射400nm至2500nm的波长带的短波长侧的光的第一反射层叠膜3，第一反射层叠膜 包括彼此交替堆叠的第一高折射率材料和第一低折射率材料层; 以及第二反射分层涂层4，用于反射400nm至2500nm的波长带的长波长侧的光，第二反射层叠涂层包括第二高折射率材料和第二低折射率材料层， 另一方面，其中第一反射层叠涂层3设置在宽带反射镜的光入射侧，第二反射层叠涂层4设置在能够反射通过第一反射层叠涂层3的光的位置， 其中所述第一高折射率材料层由选自氧化铌，氧化钛，氧化锆，氧化钽，氧化铪，氮化硅，氧化钇和氧化铟锡中的至少一种材料形成，所述第一低折射率材料层 折射率材料层由选自氧化硅和镁流感的至少一种材料形成 所述第二高折射率材料层由选自硅和锗的至少一种材料形成，并且所述第二低折射率材料层由选自下列的至少一种材料形成：硅 氧化物和氟化镁。

    Method and apparatus for dressing polishing cloth
    15.
    发明授权
    Method and apparatus for dressing polishing cloth 失效
    抛光布修整方法和装置

    公开(公告)号：US06364752B1

    公开(公告)日：2002-04-02

    申请号：US08881616

    申请日：1997-06-25

    申请人： Norio Kimura ,  You Ishii ,  Toyomi Nishi ,  Takayoshi Kawamoto ,  Takeshi Sakurai

    发明人： Norio Kimura ,  You Ishii ,  Toyomi Nishi ,  Takayoshi Kawamoto ,  Takeshi Sakurai

    IPC分类号： B24B722

    CPC分类号： B24B53/017 ,  B24B37/005 ,  B24B49/00

    摘要： A polishing cloth mounted on a turntable is dressed by bringing a dresser in contact with the polishing cloth for restoring the polishing capability of the polishing cloth. The dressing is performed by measuring heights of a surface of the polishing cloth at radial positions of the polishing cloth in a radial direction thereof, determining a rotational speed of the dresser with respect to a rotational speed of the turntable on the basis of the measured heights, and dressing the polishing cloth by pressing the dresser against the polishing cloth while the turntable and the dresser are rotating. The dresser has an annular diamond grain layer or an annular SiC layer.

    摘要翻译： 通过使修整器与抛光布接触来修整安装在转台上的抛光布，以恢复抛光布的抛光能力。 通过在抛光布的径向方向的径向位置处测量抛光布的表面的高度来进行修整，根据测量的高度确定修整器相对于转盘的旋转速度的转速 并且在转台和修整器旋转的同时通过将修整器压靠抛光布来修整抛光布。 修整器具有环形金刚石颗粒层或环形SiC层。

    Battery charging method
    16.
    发明授权
    Battery charging method 有权
    电池充电方式

    公开(公告)号：US06281663B1

    公开(公告)日：2001-08-28

    申请号：US09709578

    申请日：2000-11-13

    申请人： Kazuhiko Yagi ,  Takashi Ishikura ,  Takeshi Sakurai

    发明人： Kazuhiko Yagi ,  Takashi Ishikura ,  Takeshi Sakurai

    IPC分类号： H01M1044

    CPC分类号： B60L11/1874 ,  B60L11/1816 ,  B60L11/185 ,  B60L11/1861 ,  B60L2230/16 ,  H01M10/44 ,  Y02T10/7005 ,  Y02T10/7044 ,  Y02T10/705 ,  Y02T10/7088 ,  Y02T90/121 ,  Y02T90/128 ,  Y02T90/14 ,  Y02T90/163

    摘要： A reduction in charging time is achieved while suppressing any deterioration in the lifetime of the battery. A battery temperature increase margin is determined from the battery temperature at charge commencement and the upper limit value of the battery temperature. Moreover, the target charging capacity is determined from the initial state of charge at charge commencement and the target state of charge at charge completion. Furthermore, a value of an upper limit of the battery temperature increase is determined from these. Then, the battery charge current maximum value is set by map referral based on the value of an upper limit of the battery temperature increase such that the temperature of the battery during charging does not exceed the upper limit value. A driver performs the battery charging using a charge current value that has been set on the basis of the battery charge maximum value.

    摘要翻译： 在抑制电池寿命的任何劣化的同时实现充电时间的减少。 电池温度增加裕度由充电开始时的电池温度和电池温度的上限值确定。 此外，目标充电容量根据充电开始时的初始充电状态和充电完成时的目标充电状态来确定。 此外，由这些确定电池温度上升的上限值。 然后，基于电池温度上升的上限的值通过地图转介来设定电池充电电流最大值，使得充电期间电池的温度不超过上限值。 驱动器使用基于电池充电最大值设定的充电电流值来执行电池充电。

    Method of and system for controlling brakes
    17.
    发明授权
    Method of and system for controlling brakes 失效

    公开(公告)号：US5577816A

    公开(公告)日：1996-11-26

    申请号：US281559

    申请日：1994-07-28

    申请人： Osamu Suzuki ,  Keishin Tanaka ,  Tatsuo Hayashi ,  Takushi Matsuto ,  Chiaki Kumagai ,  Takeshi Sakurai ,  Atsuo Ota

    发明人： Osamu Suzuki ,  Keishin Tanaka ,  Tatsuo Hayashi ,  Takushi Matsuto ,  Chiaki Kumagai ,  Takeshi Sakurai ,  Atsuo Ota

    IPC分类号： B60T8/17 ,  B60T8/174 ,  B60T8/1761 ,  B60T8/32 ,  B60T8/42 ,  B60T8/50 ,  B60T8/66 ,  G06G7/00

    CPC分类号： B60T8/174 ,  B60T8/1706 ,  B60T8/17616 ,  B60T8/3225 ,  B60T8/4266 ,  B60T8/50 ,  B60T8/5043

    摘要： The ABS is provided with a modulator, and when the ABS is activated, control of the caliper pressure by the driver, is modified by the operation of the modulator having the aforementioned inlet valve (normally closed to a pressurized fluid source) and aforementioned outlet valve (normally open to a fluid exit), both controlled by the above-described control logic circuit. The modulator increases or decreases the caliper pressure, in response to changes in the pressurized fluid, regulated by such valves. Depending on the operation of the control logic circuit described above, three events may occur. When the inlet and outlet valves are not operated (i.e. their normal state), the modulator releases pressurized fluid through the output valve, and increases caliper pressure, to increase braking up to a predetermined maximum. If only the outlet valve is operated (i.e. both the inlet and outlet valves are closed), the modulator remains in a constant state and likewise, the caliper pressure is kept constant. If both the inlet and outlet valves are operated (i.e. opened and closed respectively), then in response to the increased pressurized fluid, the modulator effects a decrease in caliper pressure to reduce braking. The above is summarized in FIG. 2.Thus it is seen that the brake control is effected by setting a threshold value for each of the slip ratio .lambda. and the acceleration/deceleration .alpha., and determining whether the actual state of each wheel (i.e. .lambda.and .alpha.), is at their respective threshold value or above (less). It is thus necessary to set processing times as short as possible to improve the operating speed of an actuator which executes the process referred to above. However, there are limitations on the operating speed of the actuator, and an improvement is actually difficult to achieve.In another prior art system, the modulator comprises an input hydraulic chamber which communicates with a master cylinder, for

    Method for making a silicon carbide substrate
    18.
    发明授权
    Method for making a silicon carbide substrate 失效
    制造碳化硅衬底的方法

    公开(公告)号：US4582561A

    公开(公告)日：1986-04-15

    申请号：US369911

    申请日：1982-04-19

    申请人： Toshinori Ioku ,  Takeshi Sakurai

    发明人： Toshinori Ioku ,  Takeshi Sakurai

    IPC分类号： C30B11/00 ,  C30B19/00 ,  C30B19/04

    CPC分类号： C30B19/00 ,  C30B11/00 ,  C30B19/04 ,  C30B29/36 ,  Y10S117/915

    摘要： A silicon carbide seed layer is first formed on a (111) major surface of a silicon substrate through the use of the conventional chemical vapor deposition method. The silicon carbide seed layer includes a first surface confronting the silicon substrate. The first surface shows a predetermined grain alignment oriented with the (111) major surface of the silicon substrate even though the deposition is carried out at a temperature below the melting point of the silicon substrate. Then, the silicon substrate is melted so that the first surface of the silicon carbide seed layer is exposed to the molten silicon including a carbon source therein. In this way, a second silicon carbide layer is formed on the first surface of the silicon carbide seed layer through the use of a liquid-phase epitaxial growth method. If required, a third silicon carbide layer is formed on the second silicon carbide layer to thicken the silicon carbide substrate through the use of a conventional chemical vapor deposition method, wherein the substrate is maintained at a temperature above the melting point of silicon to ensure the high-quality crystallization.

    摘要翻译： 首先通过使用常规的化学气相沉积方法在硅衬底的（111）主表面上形成碳化硅种子层。 碳化硅种子层包括面对硅衬底的第一表面。 第一表面显示与硅衬底的（111）主表面取向的预定晶粒取向，即使沉积在低于硅衬底的熔点的温度下进行。 然后，将硅衬底熔化，使得碳化硅种子层的第一表面暴露于其中包含碳源的熔融硅。 以这种方式，通过使用液相外延生长法在碳化硅种子层的第一表面上形成第二碳化硅层。 如果需要，在第二碳化硅层上形成第三碳化硅层，以通过使用常规的化学气相沉积方法来加厚碳化硅衬底，其中衬底保持在高于硅熔点的温度，以确保 高品质结晶。