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11.发明授权Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer 失效使用倾斜蚀刻底层制造磁读取传感器的方法，用于在硬磁堆叠偏压层中诱导单轴磁各向异性公开(公告)号：US07360299B2
公开(公告)日：2008-04-22
申请号：US11097543
申请日：2005-03-31
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： A magnetoresistive sensor having an in stack bias layer with an engineered magnetic anisotropy in a direction parallel with the medium facing surface. The in-stack bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to form anisotropic roughness in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic in-stack bias layer deposited thereover.
摘要翻译： 磁阻传感器具有在与介质面向表面平行的方向上具有工程磁各向异性的堆叠偏置层。 叠层偏置层可以由CoPt，CoPtCr或一些其它磁性材料构成，并且沉积在已经被离子束蚀刻的底层上。 已经以相对于正常的角度执行离子束蚀刻，以便形成定向的波纹或小面的各向异性的粗糙度。 各向异性粗糙度在其上沉积的硬磁堆叠偏压层中引起基本平行于面向介质的表面的单轴磁各向异性。
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12.发明授权Heat assisted switching in an MRAM cell utilizing the antiferromagnetic to ferromagnetic transition in FeRh 有权利用FeRh中的反铁磁性铁磁转变，在MRAM单元中进行热辅助切换公开(公告)号：US07372116B2
公开(公告)日：2008-05-13
申请号：US10869315
申请日：2004-06-16
CPC分类号： G11C11/16 , G11C11/1675
摘要： A magnetic memory cell for use in a magnetic random access memory array that uses the antiferromagnetic to ferromagnetic transition properties of FeRh to assist in the control of switching of the memory cell.
摘要翻译： 一种用于磁随机存取存储器阵列的磁存储单元，其使用FeRh的反铁磁性铁磁转变特性来协助控制存储器单元的切换。
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13.发明申请MAGNETIC RECORDING SYSTEM WITH MEDIUM HAVING ANTIFERROMAGNETIC-TO- FERROMAGNETIC TRANSITION LAYER EXCHANGE-COUPLED TO RECORDING LAYER 审中-公开磁记录系统，具有与抗磁反应转移层交换耦合到记录层的介质公开(公告)号：US20080100964A1
公开(公告)日：2008-05-01
申请号：US11553215
申请日：2006-10-26
CPC分类号： G11B5/64 , G11B5/1278 , G11B5/3103
摘要： A magnetic recording disk drive has a bilayer recording medium of a high-anisotropy recording layer and an exchange-coupled antiferromagnetic-to-ferromagnetic (AF-F) transition layer. The transition layer has an AF-F transition temperature (TAF-F) that decreases relatively rapidly with increasing applied magnetic field. Thus the transition layer has a transition field HAF-F(T), which is the applied magnetic field required to transition the material from antiferromagnetic to ferromagnetic at temperature T without the need to heat the layer. At ambient temperature and in the absence of HW, the transition layer is antiferromagnetic and the switching field H0 of the bilayer is just the H0 of the high-anisotropy recording layer, which is typically much higher than HW. In the presence of the write field HW the transition layer transitions from antiferromagnetic to ferromagnetic so that data can be written to the recording by the mere application of the write field HW without the need to heat the transition layer or recording layer. The transition layer may be formed of Fe(RhM), where M is an element selected from V, Mn, Au and Ni.
摘要翻译： 磁记录盘驱动器具有高各向异性记录层和交换耦合的反铁磁到铁磁（AF-F）过渡层的双层记录介质。 过渡层具有随着施加的磁场增加而相对快速地减小的AF-F转变温度（T AF AF F F）。 因此，过渡层具有过渡场H AF-F（T），其是在温度T下将材料从反铁磁转变为铁磁所需的施加磁场，而不需要加热该层。 在环境温度下和在不存在的情况下，过渡层是反铁磁性的，并且双层的开关场H 0正好是H
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14.发明授权公开(公告)号：US06650513B2
公开(公告)日：2003-11-18
申请号：US09772468
申请日：2001-01-29
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/66 , H01F10/30 , H01F10/3218 , H01F10/3254 , H01F10/3286 , Y10T428/1114
摘要： The invention is a magnetic device that includes a ferromagnetic/antiferromagnetic (F/AF) structure wherein the ferromagnetic layer is perpendicularly exchange biased by the antiferromagnetic layer. The invention has application to perpendicular magnetic recording disks and magnetic tunnel junction devices used as read heads for disk drives and memory cells in magnetic memory arrays.
摘要翻译： 本发明是一种磁性装置，其包括铁磁/反铁磁（F / AF）结构，其中铁磁层由反铁磁层垂直交换偏置。 本发明适用于用作磁存储器阵列中的磁盘驱动器和存储单元的读磁头的垂直磁记录盘和磁隧道结装置。
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公开(公告)号：US07989096B2
公开(公告)日：2011-08-02
申请号：US12691603
申请日：2010-01-21
IPC分类号： G11B5/66
摘要： A recording medium providing improved writeability in perpendicular recording applications includes a magnetic recording layer having an axis of magnetic anisotropy substantially perpendicular to the surface thereof, an exchange-spring layer ferromagnetically exchange coupled to the magnetic recording layer and having a coercivity less than the magnetic recording layer coercivity, and a coupling layer between the magnetic recording layer and the exchange-spring layer. The coupling layer regulates the ferromagnetic exchange coupling between the magnetic recording layer and the exchange-spring layer.
摘要翻译： 在垂直记录应用中提供改善的写入能力的记录介质包括具有基本上垂直于其表面的磁各向异性轴的磁记录层，耦合到磁记录层并具有小于磁记录的矫顽磁力的磁性交换弹簧层 层矫顽力和磁记录层与交换弹簧层之间的耦合层。 耦合层调节磁记录层与交换弹簧层之间的铁磁交换耦合。
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16.发明授权Antiferromagnetically coupled media for magnetic recording with weak coupling layer 失效用于具有弱耦合层的磁记录的反铁磁耦合介质公开(公告)号：US07556870B2
公开(公告)日：2009-07-07
申请号：US11204979
申请日：2005-08-15
IPC分类号： G11B5/66
CPC分类号： G11B5/66
摘要： An embodiment of the invention is a layered magnetic thin film structure that uses antiferromagnetically coupled (AFC) magnetic layers where the top layer structure consists of an upper magnetic layer that is weakly ferromagnetically coupled via a nonmagnetic or weakly magnetic exchange coupling layer (interlayer) to a ferromagnetic exchange enhancing layer that is in turn, AF coupled to the lower ferromagnetic layer of the AFC structure. Preferred materials for the weak coupling layer include alloys of cobalt such as CoRu, CoBRu and CoCr in which the Co content is below the point at which the material would be ferromagnetic. A second embodiment of the invention is a laminated, AF-coupled media structure. In this structure the lower AFC layer that makes up the lower laminate layer includes: the middle magnetic layer, the weak ferromagnetic coupling layer, and the exchange enhancing layer.
摘要翻译： 本发明的一个实施方案是使用反铁磁耦合（AFC）磁性层的层状磁性薄膜结构，其中顶层结构由通过非磁性或弱磁性交换耦合层（中间层）弱铁磁耦合的上部磁性层组成， 铁磁交换增强层，其依次是AF耦合到AFC结构的下铁磁层。 用于弱耦合层的优选材料包括诸如CoRu，CoBRu和CoCr的钴的合金，其中Co含量低于材料将是铁磁性的点。 本发明的第二实施例是层叠的AF耦合介质结构。 在该结构中，构成下层叠层的下部AFC层包括：中间磁性层，弱铁磁性结合层和交换增强层。
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17.发明授权Disk drive with laminated magnetic thin films with sublayers for magnetic recording 有权具有层叠磁性薄膜的磁盘驱动器，具有用于磁记录的子层公开(公告)号：US07976964B2
公开(公告)日：2011-07-12
申请号：US11084402
申请日：2005-03-18
IPC分类号： G11B5/66
摘要： The invention includes a disk drive with a magnetic recording disk with an upper and lower sublayer in at least one magnetic layer of a laminated magnetic layer structure that includes a spacer layer that substantially decouples the magnetic layers. The lower sublayer has a lower boron content than the upper sublayer and a preferred embodiment is CoPtCrBTa. The upper sublayer is deposited onto the lower sublayer and is preferably CoPtCrB with a higher boron content than the lower sublayer. The composition of the lower sublayer gives it a very low moment with low intrinsic coercivity which would not be useful as a recording layer on its own. The upper sublayer is a higher moment alloy with high intrinsic coercivity. An embodiment of the invention includes a laminated magnetic layer structure which is antiferromagnetically coupled to a lower ferromagnetic layer.
摘要翻译： 本发明包括具有磁记录盘的磁盘驱动器，该磁盘驱动器具有在层叠磁性层结构的至少一个磁性层中具有上和下子层的磁记录盘，该磁层包括使磁性层基本上分离的间隔层。 下层具有比上层更低的硼含量，优选实施方案是CoPtCrBTa。 上部子层沉积在下部子层上，优选的是具有比下部子层更高的硼含量的CoPtCrB。 下层的组成使得其具有低固有矫顽力的非常低的力矩，其本身不会用作记录层。 上层是具有高固有矫顽力的较高的力矩合金。 本发明的实施例包括层叠的磁性层结构，其被反铁磁耦合到下铁磁层。
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18.发明授权Laminated magnetic recording media with antiferromagnetically coupled layer as one of the individual magnetic layers in the laminate 失效具有反铁磁耦合层的叠层磁记录介质作为层压板中的单个磁性层之一公开(公告)号：US06773834B2
公开(公告)日：2004-08-10
申请号：US10059527
申请日：2002-01-29
IPC分类号： G11B566
CPC分类号： C23C28/021 , C23C28/023 , C23C28/42 , C23C28/44 , G11B5/66 , Y10S428/90 , Y10T428/12465 , Y10T428/265
摘要： A laminated magnetic recording medium for data storage has an antiferromagnetically-coupled (AFC) layer and a single ferromagnetic layer spaced apart by a nonferromagnetic spacer layer. The AFC layer is formed as two ferromagnetic films antiferromagnetically coupled together across an antiferromagnetically coupling film that has a composition and thickness to induce antiferromagnetic coupling. In each of the two remanent magnetic states, the magnetic moments of the two antiferromagnetically-coupled films in the AFC layer are oriented antiparallel, and the magnetic moment of the single ferromagnetic layer and the greater-moment ferromagnetic film of the AFC layer are oriented parallel. The nonferromagnetic spacer layer between the AFC layer and the single ferromagnetic layer has a composition and thickness to prevent antiferromagnetic exchange coupling. The laminated medium has improved thermal stability and reduced intrinsic media noise.
摘要翻译： 用于数据存储的叠层磁记录介质具有反铁磁耦合（AFC）层和由非铁磁隔离层隔开的单个铁磁层。 AFC层由反铁磁耦合膜反铁磁耦合在一起的两个铁磁膜形成，其具有组成和厚度以诱导反铁磁耦合。 在两个剩余磁状态中的每一个中，AFC层中的两个反铁磁耦合膜的磁矩取向反平行，并且单个铁磁层的磁矩和AFC层的较大时刻铁磁膜的取向平行 。 AFC层和单个铁磁层之间的非铁磁间隔层具有防铁磁交换耦合的组成和厚度。 层压介质具有改善的热稳定性和降低的本征介质噪声。
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19.发明授权Patterned magnetic recording media with regions rendered nonmagnetic by ion irradiation 有权图案磁记录介质，通过离子辐照使磁场呈非磁性公开(公告)号：US06383598B1
公开(公告)日：2002-05-07
申请号：US09602606
申请日：2000-06-21
IPC分类号： B32B302
CPC分类号： G11B5/855 , C22C5/04 , G11B5/82 , Y10T428/24479 , Y10T428/31
摘要： A patterned magnetic recording disk has a magnetic recording layer patterned into discrete magnetic and nonmagnetic regions having substantially the same chemical composition. The magnetic regions have a chemically-ordered L12 crystalline structure and the nonmagnetic regions have a chemically-disordered crystalline structure. The chemically-ordered intermetallic compound CrPt3, which is ferromagnetic, is rendered paramagnetic by ion irradiation. This CrPt3 material is patterned by irradiating local regions through a mask to create nonmagnetic regions. The ions pass through the openings in the mask and impact the chemically-ordered CrPt3 in selected regions corresponding to the pattern of holes in the mask. The ions disrupt the ordering of the Cr and Pt atoms in the unit cell and transform the CrPt3 into paramagnetic regions corresponding to the mask pattern, with the regions of the film not impacted by the ions retaining their chemically-ordered structure.
摘要翻译： 图案化磁记录盘具有图案化成具有基本上相同化学成分的离散磁性和非磁性区域的磁记录层。 磁性区域具有化学有序的L12结晶结构，非磁性区域具有化学无序的结晶结构。 铁磁性的化学有序金属间化合物CrPt3通过离子照射而变得顺磁性。 通过用掩模照射局部区域来形成该CrPt3材料以形成非磁性区域。 离子通过掩模中的开口，并在对应于掩模中的孔图案的选定区域中冲击化学有序的CrPt3。 离子破坏单元电池中Cr和Pt原子的排列，并将CrPt3转变成对应于掩模图案的顺磁区域，膜的区域不受保留其化学有序结构的离子的影响。
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20.发明授权Laminated magnetic thin films with weak antiferromagnetic coupling for perpendicular magnetic recording 有权用于垂直磁记录的具有弱反铁磁耦合的层压磁性薄膜公开(公告)号：US07529065B2
公开(公告)日：2009-05-05
申请号：US11134746
申请日：2005-05-19
IPC分类号： G11B5/66
CPC分类号： G11B5/012 , G11B5/66 , G11B2005/0002
摘要： The invention uses an upper and lower magnetic layer of a laminated magnetic layer structure that includes an AF spacer layer that results in weak antiferromagnetic coupling of the magnetic layers that is insufficient to cause either of the layers to switch so that the magnetic orientations of the two ferromagnetic layers remain parallel. An advantage of the invention is that the AF-coupling tends to anti-correlate the noise in the two layers. The weak AF coupling according to the invention is believed to act at the transition boundaries in the media to cause some of the noise domains to be oriented antiparallel and the noise to be less correlated than would be the case without the AF coupling and thereby to achieve improved SNR.
摘要翻译： 本发明使用层叠磁性层结构的上下磁性层，其包括AF间隔层，其导致磁性层的弱反铁磁耦合，其不足以导致任一层切换，使得两者的磁取向 铁磁层保持平行。 本发明的一个优点是AF耦合倾向于使两层中的噪声相互关联。 认为根据本发明的弱AF耦合被认为在介质中的过渡边界处起作用以使得一些噪声区域被反平行取向，并且噪声与没有AF耦合的情况相比更不相关，从而实现 改善的SNR。
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