公开(公告)号：US08853856B2

公开(公告)日：2014-10-07

申请号：US12820880

申请日：2010-06-22

申请人： Maxime Darnon ,  Gerald W. Gibson ,  Pratik P. Joshi ,  Qinghuang Lin

发明人： Maxime Darnon ,  Gerald W. Gibson ,  Pratik P. Joshi ,  Qinghuang Lin

IPC分类号： H01L23/48 ,  B82Y35/00 ,  H01L21/768 ,  B82Y40/00 ,  H01L23/532 ,  H01L21/66

CPC分类号： H01L23/53276 ,  B82Y35/00 ,  B82Y40/00 ,  H01L21/76808 ,  H01L21/76835 ,  H01L21/76885 ,  H01L22/14 ,  H01L2221/1031 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： The present disclosure relates to a structure comprising 1. an electrically conductive substrate having carbon nanotubes grown thereon; 2. a cured polymeric fill matrix comprising at least one latent photoacid generator embedded around the carbon nanotubes but allowing tips of the carbon nanotubes to be exposed; 3. a layer of patterned and cured photosensitive dielectric material on the cured polymeric fill matrix, wherein tips of the carbon nanotubes are exposed within the patterns; and 4. an electrically conductive material filled into the interconnect pattern and in contact with the exposed tips of the carbon nanotubes; and to methods of making the structure and using the structure to measure the electrical characteristics of carbon nanotubes.

公开(公告)号：US20120301980A1

公开(公告)日：2012-11-29

申请号：US13569394

申请日：2012-08-08

申请人： Maxime Darnon ,  Gerald W. Gibson ,  Pratik P. Joshi ,  Qinghuang Lin

发明人： Maxime Darnon ,  Gerald W. Gibson ,  Pratik P. Joshi ,  Qinghuang Lin

IPC分类号： H01L21/66

CPC分类号： H01L23/53276 ,  B82Y35/00 ,  B82Y40/00 ,  H01L21/76808 ,  H01L21/76835 ,  H01L21/76885 ,  H01L22/14 ,  H01L2221/1031 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： The present disclosure relates to a structure comprising 1. an electrically conductive substrate having carbon nanotubes grown thereon; 2. a cured polymeric fill matrix comprising at least one latent photoacid generator embedded around the carbon nanotubes but allowing tips of the carbon nantotubes to be exposed; 3. a layer of patterned and cured photosensitive dielectric material on the cured polymeric fill matrix, wherein tips of the carbon nantobues are exposed within the patterns; and 4. an electrically conductive material filled into the interconnect pattern and in contact with the exposed tips of the carbon nanotubes; and to methods of making the structure and using the structure to measure the electrical characteristics of carbon nanotubes.

摘要翻译： 本公开涉及一种结构，其包括：其上生长有碳纳米管的导电基材; 2.一种固化的聚合物填充基质，其包含嵌入碳纳米管周围的至少一个潜在光致酸发生剂，但允许碳纳米管的尖端暴露; 在固化的聚合物填充基质上的一层图案化和固化的光敏电介质材料，其中碳纳米管的尖端在图案内暴露; 4.一种填充到互连图案中并与碳纳米管的暴露尖端接触的导电材料; 以及制造该结构并使用该结构来测量碳纳米管的电特性的方法。

公开(公告)号：US20110311781A1

公开(公告)日：2011-12-22

申请号：US12820904

申请日：2010-06-22

申请人： Maxime Darnon ,  Pratik P. Joshi ,  Qinghuang Lin

发明人： Maxime Darnon ,  Pratik P. Joshi ,  Qinghuang Lin

IPC分类号： B32B3/10 ,  G03F7/20 ,  B82Y99/00

CPC分类号： B82Y40/00 ,  G03F7/0046 ,  G03F7/0757 ,  G03F7/094 ,  G03F7/11 ,  Y10T428/24612

摘要： The present disclosure relates to a method of patterning a photosensitive material on a polymeric fill matrix comprising at least one latent photoacid generator; and a structure prepared according to said method. The method comprises: a. depositing a polymeric fill matrix comprising at least one latent photoacid generator; b. curing the polymeric fill matrix; c. depositing a layer of photosensitive material directly onto the cured polymeric fill matrix; and d. forming a pattern with at least one opening in the layer of photosensitive material with lithography.

摘要翻译： 本公开涉及一种在包含至少一种潜在光酸产生剂的聚合物填充基质上图案化感光材料的方法; 以及根据所述方法制备的结构。 该方法包括：a。 沉积包含至少一种潜在光酸产生剂的聚合物填充基质; b。 固化聚合物填充基质; C。 将一层感光材料直接沉积到固化的聚合物填充基质上; 和d。 通过光刻在光敏材料层中形成具有至少一个开口的图案。

公开(公告)号：US20110260326A1

公开(公告)日：2011-10-27

申请号：US12768267

申请日：2010-04-27

申请人： Lawrence A. Clevenger ,  Maxime Darnon ,  Qinghuang Lin ,  Anthony D. Lisi ,  Satyanarayana V. Nitta

发明人： Lawrence A. Clevenger ,  Maxime Darnon ,  Qinghuang Lin ,  Anthony D. Lisi ,  Satyanarayana V. Nitta

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L21/76829 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/0276 ,  H01L21/31 ,  H01L21/7682 ,  H01L21/76825 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in a photo-patternable low k material in which air gaps of different depths are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures.

摘要翻译： 公开了使用可光图案化的低k材料制造用于VLSI和ULSI器件的含气隙的金属 - 绝缘体互连结构的方法以及形成的含气隙的互连结构。 更具体地，本文所述的方法提供了内置于可光图案化的低k材料中的互连结构，其中不同深度的气隙通过光刻图案中的低k材料中的光刻来定义。 在本发明的方法中，不需要蚀刻步骤来形成气隙。 由于在形成可光图案化的低k材料内的气隙中不需要蚀刻步骤，所以本发明公开的方法提供了高度可靠的互连结构。

公开(公告)号：US08637395B2

公开(公告)日：2014-01-28

申请号：US12619298

申请日：2009-11-16

申请人： Maxime Darnon ,  Qinghuang Lin

发明人： Maxime Darnon ,  Qinghuang Lin

IPC分类号： H01L21/4763

CPC分类号： H01L21/76804 ,  C08G77/04 ,  H01L21/02126 ,  H01L21/02318 ,  H01L21/31 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A single damascene or dual damascene interconnect structure fabricated with a photo-patternable low-k dielectric (PPLK) which is cured after etching. This method prevents the PPLK damage and the tapering of the edges of the interconnect structure. In one embodiment, the method of the present invention includes depositing a photo-patternable low-k (PPLK) material atop a substrate. The at least one PPLK material is patterned, creating a single damascene structure. For dual damascene structures, a second PPLK layer is coated and patterned. An etch process is performed to transfer the pattern from the PPLK material into at least a portion of the substrate. A diffusion liner and a conductive material can be deposited after the etch process. The resulting structure is cured anytime after etching in order to transform the resist like PPLK into a permanent low-k material that remains within the structure.

摘要翻译： 用蚀刻后固化的光可图案化低k电介质（PPLK）制造的单镶嵌或双镶嵌互连结构。 该方法防止了PPLK损坏和互连结构边缘的逐渐变细。 在一个实施例中，本发明的方法包括在衬底顶部沉积可光可编码的低k（PPLK）材料。 至少一个PPLK材料被图案化，形成单个镶嵌结构。 对于双镶嵌结构，涂覆和图案化第二PPLK层。 执行蚀刻工艺以将图案从PPLK材料转移到衬底的至少一部分中。 在蚀刻工艺之后可以沉积扩散衬垫和导电材料。 所得到的结构在蚀刻后随时固化，以将抗蚀剂像PPLK转变成保持在结构内的永久低k材料。

公开(公告)号：US20130001781A1

公开(公告)日：2013-01-03

申请号：US13602126

申请日：2012-09-01

申请人： Maxime Darnon ,  Qinghuang Lin

发明人： Maxime Darnon ,  Qinghuang Lin

IPC分类号： H01L23/532 ,  H01L23/522

CPC分类号： H01L21/76804 ,  C08G77/04 ,  H01L21/02126 ,  H01L21/02318 ,  H01L21/31 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： An interconnect structure is provided which includes at least one patterned and cured low-k material located directly on a surface of a substrate; and at least one least one conductively filled region embedded within an interconnect pattern located within the at least one patterned and cured low-k material, wherein the at least one conductively filled region has an inflection point at a lower region of the interconnect pattern that is in proximity to an upper surface of the substrate and the interconnect region having an upper region that has substantially straight sidewalls.

摘要翻译： 提供了一种互连结构，其包括直接位于衬底的表面上的至少一个图案化和固化的低k材料; 以及至少一个导电填充区域，其嵌入位于所述至少一个图案化和固化的低k材料内的互连图案内，其中所述至少一个导电填充区域在所述互连图案的下部区域具有拐点， 靠近衬底的上表面，并且互连区域具有具有基本上直的侧壁的上部区域。

公开(公告)号：US08828749B2

公开(公告)日：2014-09-09

申请号：US13569394

申请日：2012-08-08

申请人： Maxime Darnon ,  Gerald W. Gibson ,  Pratik P. Joshi ,  Qinghuang Lin

发明人： Maxime Darnon ,  Gerald W. Gibson ,  Pratik P. Joshi ,  Qinghuang Lin

IPC分类号： H01L21/66 ,  H01L23/532 ,  H01L21/768 ,  B82Y40/00 ,  B82Y35/00

CPC分类号： H01L23/53276 ,  B82Y35/00 ,  B82Y40/00 ,  H01L21/76808 ,  H01L21/76835 ,  H01L21/76885 ,  H01L22/14 ,  H01L2221/1031 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： The present disclosure relates to a structure comprising 1. an electrically conductive substrate having carbon nanotubes grown thereon; 2. a cured polymeric fill matrix comprising at least one latent photoacid generator embedded around the carbon nanotubes but allowing tips of the carbon nanotubes to be exposed; 3. a layer of patterned and cured photosensitive dielectric material on the cured polymeric fill matrix, wherein tips of the carbon nanotubes are exposed within the patterns; and 4. an electrically conductive material filled into the interconnect pattern and in contact with the exposed tips of the carbon nanotubes; and to methods of making the structure and using the structure to measure the electrical characteristics of carbon nanotubes.

摘要翻译： 本公开涉及一种结构，其包括：其上生长有碳纳米管的导电基材; 2.一种固化的聚合物填充基质，其包含嵌入碳纳米管周围的至少一个潜在光致酸发生剂，但允许碳纳米管的尖端暴露; 在固化的聚合物填充基质上的图案化和固化的光敏介电材料层，其中碳纳米管的尖端在图案内暴露; 4.一种填充到互连图案中并与碳纳米管的暴露尖端接触的导电材料; 以及制造该结构并使用该结构来测量碳纳米管的电特性的方法。

公开(公告)号：US08629561B2

公开(公告)日：2014-01-14

申请号：US13540931

申请日：2012-07-03

申请人： Lawrence A. Clevenger ,  Maxime Darnon ,  Qinghuang Lin ,  Anthony D. Lisi ,  Satyanarayana V. Nitta

发明人： Lawrence A. Clevenger ,  Maxime Darnon ,  Qinghuang Lin ,  Anthony D. Lisi ,  Satyanarayana V. Nitta

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/70

CPC分类号： H01L23/53295 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5222 ,  H01L2221/1031 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in a photo-patternable low k material in which air gaps are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures.

摘要翻译： 公开了使用可光图案化的低k材料制造用于VLSI和ULSI器件的含气隙的金属 - 绝缘体互连结构的方法以及形成的含气隙的互连结构。 更具体地说，本文描述的方法提供内置于光可图案化的低k材料中的互连结构，其中通过光刻法在光可图案化的低k材料中限定气隙。 在本发明的方法中，不需要蚀刻步骤来形成气隙。 由于在形成可光图案化的低k材料内的气隙中不需要蚀刻步骤，所以本发明公开的方法提供了高度可靠的互连结构。

公开(公告)号：US08241992B2

公开(公告)日：2012-08-14

申请号：US12776885

申请日：2010-05-10

申请人： Lawrence A. Clevenger ,  Maxime Darnon ,  Qinghuang Lin ,  Anthony D. Lisi ,  Satyanarayana V. Nitta

发明人： Lawrence A. Clevenger ,  Maxime Darnon ,  Qinghuang Lin ,  Anthony D. Lisi ,  Satyanarayana V. Nitta

IPC分类号： H01L21/76 ,  H01L21/4763 ,  H01L21/44

CPC分类号： H01L23/53295 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5222 ,  H01L2221/1031 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in a photo-patternable low k material in which air gaps are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures.

摘要翻译： 公开了使用可光图案化的低k材料制造用于VLSI和ULSI器件的含气隙的金属 - 绝缘体互连结构的方法以及形成的含气隙的互连结构。 更具体地说，本文描述的方法提供内置于光可图案化的低k材料中的互连结构，其中通过光刻法在光可图案化的低k材料中限定气隙。 在本发明的方法中，不需要蚀刻步骤来形成气隙。 由于在形成可光图案化的低k材料内的气隙中不需要蚀刻步骤，所以本发明公开的方法提供了高度可靠的互连结构。

公开(公告)号：US20110309507A1

公开(公告)日：2011-12-22

申请号：US12820880

申请日：2010-06-22

申请人： Maxime Darnon ,  Gerald W. Gibson ,  Pratik P. Joshi ,  Qinghuang Lin

发明人： Maxime Darnon ,  Gerald W. Gibson ,  Pratik P. Joshi ,  Qinghuang Lin

IPC分类号： H01L23/532 ,  H01L21/768 ,  H01L21/66 ,  B82Y40/00 ,  B82Y99/00

CPC分类号： H01L23/53276 ,  B82Y35/00 ,  B82Y40/00 ,  H01L21/76808 ,  H01L21/76835 ,  H01L21/76885 ,  H01L22/14 ,  H01L2221/1031 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： The present disclosure relates to a structure comprising 1. an electrically conductive substrate having carbon nanotubes grown thereon; 2. a cured polymeric fill matrix comprising at least one latent photoacid generator embedded around the carbon nanotubes but allowing tips of the carbon nanotubes to be exposed; 3. a layer of patterned and cured photosensitive dielectric material on the cured polymeric fill matrix, wherein tips of the carbon nanotubes are exposed within the patterns; and 4. an electrically conductive material filled into the interconnect pattern and in contact with the exposed tips of the carbon nanotubes; and to methods of making the structure and using the structure to measure the electrical characteristics of carbon nanotubes.

摘要翻译： 本公开涉及一种结构，其包括：其上生长有碳纳米管的导电基材; 2.一种固化的聚合物填充基质，其包含嵌入碳纳米管周围的至少一个潜在光致酸发生剂，但允许碳纳米管的尖端暴露; 在固化的聚合物填充基质上的图案化和固化的光敏介电材料层，其中碳纳米管的尖端在图案内暴露; 4.一种填充到互连图案中并与碳纳米管的暴露尖端接触的导电材料; 以及制造该结构并使用该结构来测量碳纳米管的电特性的方法。