摘要:
A method for detecting faults in a manufacturing line includes processing a plurality of workpieces in a plurality of tools; generating a first error signal associated with the workpieces based on the processing performed in a first tool of the plurality of tools; generating a second error signal associated with the workpieces based on the processing performed in a second tool of the plurality of tools; combining the first and second error signals to generate a composite error signal; and identifying a fault condition with the workpieces based on the composite error signal. A manufacturing system includes a plurality of tools adapted to process workpieces, and a fault monitor. The fault monitor is adapted to receive a first error signal associated with the workpieces based on the processing performed in a first tool of the plurality of tools, receive a second error signal associated with the workpieces based on the processing performed in a second tool of the plurality of tools, combine the first and second error signals to generate a composite error signal, and identify a fault condition with the workpieces based on the composite error signal.
摘要:
A method includes retrieving a group test parameter determined based on test results associated with a plurality of integrated circuit devices. A particular integrated circuit device is tested using a test program and the group test parameter.
摘要:
The present invention provides a method, an apparatus, and an automated semiconductor fabrication facility for determining control information based on global goals of a semiconductor manufacturing facility. The method includes accessing information indicative of at least one global goal of a semiconductor manufacturing facility, determining control information based on the at least one global goal, and providing a portion of the control information to each of a plurality of control units. Each of the plurality of control units is configured to control a corresponding manufacturing activity based on the provided portion of the control information.
摘要:
The present invention is generally directed to various methods of controlling wet chemical processes in forming metal silicide regions, and a system for performing same. In one illustrative embodiment, the method comprises providing a substrate having a layer of unreacted refractory metal and at least one metal silicide region formed thereabove, performing a wet chemical process to remove at least a portion of the layer of unreacted refractory metal, measuring at least one characteristic of the portion of the layer of unreacted refractory metal while the wet chemical process is being performed, and controlling at least one parameter of the wet chemical process based upon the measured at least one characteristic of the portion of the layer of unreacted refractory metal. In another illustrative embodiment, the method comprises providing a substrate having a layer of unreacted refractory metal and at least one metal silicide region formed thereabove, performing a wet chemical process to remove at least a portion of the layer of unreacted refractory metal, measuring at least one characteristic of the portion of the layer of unreacted refractory metal after at least some of the wet chemical process has been performed, and controlling at least one parameter of the wet chemical process based upon the measured at least one characteristic of the portion of the layer of unreacted refractory metal.
摘要:
A measurement system is presented for detecting the presence of one or more harmful chemical species within one or more chambers of a semiconductor wafer processing device. Chemical species of interest include oxygen (O.sub.2), nitrogen (N.sub.2), moisture (H.sub.2 O), and organic compounds associated with photoresist processing. Such organic compounds include isopropyl alcohol (CH.sub.3 CH(OH)CH.sub.3), acetone (CH.sub.3 COCH.sub.3), and ethyl-3-ethoxy propionate (C.sub.7 H.sub.14 O.sub.3). Candidate semiconductor wafer processing devices include evaporation, sputtering, and low pressure chemical vapor deposition (LPCVD) devices. The measurement system measures the concentrations of chemical species within each monitored chamber of the semiconductor wafer processing device: (i) during the processing of semiconductor wafers within the semiconductor wafer processing device, and (ii) during recovery periods following preventive maintenance or repair activities performed upon the semiconductor wafer processing device. Performing measurements during recovery periods aids in returning the semiconductor wafer processing device to service following preventive maintenance or repair activities. Data collection is not performed at other times (e.g., when the semiconductor wafer processing device is idle) in order to reduce data storage requirements. The measurement system includes one or more ambient sampling sensors coupled to a data collection computer through a control interface. Each ambient sampling sensor is in gaseous communication with ambients within the one or more monitored chambers. The control interface triggers data collection during the processing of one or more semiconductor wafers within the semiconductor wafer processing device, and following a maintenance activity performed upon the semiconductor wafer processing device.
摘要:
A device is provided for aligning a laser. For example, such a device could be used to align a laser as part of a particle measurement device in a semiconductor process tool. The device consists of a rigid member with alignment marks which define the intended point of impingement of a beam emitted from the laser. The laser is moved to allow the emitted laser beam to extend upon the alignment device and impinge upon the alignment marks. When the laser beam impinges upon alignment marks, preferably formed near the center of the alignment device, the laser is determined to be in proper alignment. The device is configured having a outer circumference equal to the terminating element which the device replaces during the alignment procedure. The device is then removed from the semiconductor process tool and the terminating element, either a beam stop or a photodiode detector, is re-inserted. A procedure utilizing relatively few steps for properly aligning the laser is thereby provided.
摘要:
The present invention provides a method and apparatus for dynamic adjustment of a sampling plan. The method includes accessing wafer electrical test data associated with at least one workpiece that has been processed by at least one processing tool. The method also includes determining, based on the wafer electrical test data, at least one sampling plan for at least one measurement device configured to measure at least one parameter associated with workpieces processed by the at least one processing tool.
摘要:
A test structure includes a first plurality of lines and a second plurality of lines intersecting the first plurality of lines. The first and second pluralities of lines defining a grid having openings. A method for determining grid dimensions includes providing a wafer having a test structure comprising a plurality of intersecting lines that define a grid having openings; illuminating at least a portion of the grid with a light source; measuring light reflected from the illuminated portion of the grid to generate a reflection profile; and determining a dimension of the grid based on the reflection profile. A metrology tool is adapted to receive a wafer having a test structure comprising a plurality of intersecting lines that define a grid having openings. The metrology tool includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the grid. The detector is adapted to measure light reflected from the illuminated portion of the grid to generate a reflection profile. The data processing unit is adapted to determine a dimension of the grid based on the reflection profile.
摘要:
The present invention is generally directed to various methods and systems for calibrating degradable components using process state data. In one illustrative embodiment, the method includes providing a tool comprised of at least one process chamber, providing at least one process state sensor that is adapted to obtain process state data regarding at least one characteristic of a process environment established in the chamber in performance of a process operation, operatively coupling at least one of a new or repaired degradable component to the tool, and calibrating the new or repaired degradable component based upon the process state data. In further embodiments, the method comprises processing a plurality of additional workpieces in the tool after the new or repaired degradable components have been calibrated using process state data in accordance with one aspect of the present invention.
摘要:
The present invention is generally directed to various methods of controlling the formation of metal silicide regions, and a system for performing same. In one illustrative embodiment, the method comprises forming a layer of refractory metal above a feature, performing at least one anneal process to convert a portion of the layer of refractory metal to at least one metal silicide region on the feature, and measuring at least one characteristic of at least one metal silicide region while the anneal process is being performed. In another illustrative embodiment, the method comprises forming a layer of refractory metal above a feature, performing at least one anneal process to convert a portion of the layer of refractory metal to at least one metal silicide region on the feature, and performing at least one scatterometric measurement of the metal silicide region after at least a portion of the anneal process is performed to determine at least one characteristic of the metal silicide region.