Method and apparatus for fault detection using multiple tool error signals
    11.
    发明授权
    Method and apparatus for fault detection using multiple tool error signals 有权
    使用多个刀具误差信号进行故障检测的方法和装置

    公开(公告)号:US06563300B1

    公开(公告)日:2003-05-13

    申请号:US09832781

    申请日:2001-04-11

    IPC分类号: G01R3100

    摘要: A method for detecting faults in a manufacturing line includes processing a plurality of workpieces in a plurality of tools; generating a first error signal associated with the workpieces based on the processing performed in a first tool of the plurality of tools; generating a second error signal associated with the workpieces based on the processing performed in a second tool of the plurality of tools; combining the first and second error signals to generate a composite error signal; and identifying a fault condition with the workpieces based on the composite error signal. A manufacturing system includes a plurality of tools adapted to process workpieces, and a fault monitor. The fault monitor is adapted to receive a first error signal associated with the workpieces based on the processing performed in a first tool of the plurality of tools, receive a second error signal associated with the workpieces based on the processing performed in a second tool of the plurality of tools, combine the first and second error signals to generate a composite error signal, and identify a fault condition with the workpieces based on the composite error signal.

    摘要翻译: 一种用于检测生产线中的故障的方法,包括在多个工具中处理多个工件; 基于在所述多个工具的第一工具中执行的处理来生成与所述工件相关联的第一错误信号; 基于在所述多个工具的第二工具中执行的处理,生成与所述工件相关联的第二误差信号; 组合第一和第二误差信号以产生复合误差信号; 并根据复合误差信号识别工件的故障状况。 制造系统包括适于处理工件的多个工具和故障监视器。 故障监视器适于基于在多个工具的第一工具中执行的处理来接收与工件相关联的第一错误信号,基于在工件的第二工具中执行的处理来接收与工件相关联的第二错误信号 多个工具,组合第一和第二误差信号以产生复合误差信号,并且基于复合误差信号识别与工件的故障状况。

    Automated integrated circuit device manufacturing facility using central control
    13.
    发明授权
    Automated integrated circuit device manufacturing facility using central control 有权
    使用中央控制的自动化集成电路器件制造设备

    公开(公告)号:US07257458B1

    公开(公告)日:2007-08-14

    申请号:US11313196

    申请日:2005-12-20

    申请人: Richard J. Markle

    发明人: Richard J. Markle

    IPC分类号: G06F19/00

    摘要: The present invention provides a method, an apparatus, and an automated semiconductor fabrication facility for determining control information based on global goals of a semiconductor manufacturing facility. The method includes accessing information indicative of at least one global goal of a semiconductor manufacturing facility, determining control information based on the at least one global goal, and providing a portion of the control information to each of a plurality of control units. Each of the plurality of control units is configured to control a corresponding manufacturing activity based on the provided portion of the control information.

    摘要翻译: 本发明提供一种用于基于半导体制造设备的全局目标来确定控制信息的方法,装置和自动化半导体制造设备。 该方法包括访问指示半导体制造设施的至少一个全局目标的信息,基于至少一个全局目标确定控制信息,以及将控制信息的一部分提供给多个控制单元中的每一个。 多个控制单元中的每一个被配置为基于所提供的控制信息的部分来控制对应的制造活动。

    Methods of controlling wet chemical processes in forming metal silicide regions, and system for performing same
    14.
    发明授权
    Methods of controlling wet chemical processes in forming metal silicide regions, and system for performing same 失效
    在形成金属硅化物区域中控制湿化学工艺的方法以及用于执行其的系统

    公开(公告)号:US06790683B1

    公开(公告)日:2004-09-14

    申请号:US10303224

    申请日:2002-11-25

    IPC分类号: H01L2100

    摘要: The present invention is generally directed to various methods of controlling wet chemical processes in forming metal silicide regions, and a system for performing same. In one illustrative embodiment, the method comprises providing a substrate having a layer of unreacted refractory metal and at least one metal silicide region formed thereabove, performing a wet chemical process to remove at least a portion of the layer of unreacted refractory metal, measuring at least one characteristic of the portion of the layer of unreacted refractory metal while the wet chemical process is being performed, and controlling at least one parameter of the wet chemical process based upon the measured at least one characteristic of the portion of the layer of unreacted refractory metal. In another illustrative embodiment, the method comprises providing a substrate having a layer of unreacted refractory metal and at least one metal silicide region formed thereabove, performing a wet chemical process to remove at least a portion of the layer of unreacted refractory metal, measuring at least one characteristic of the portion of the layer of unreacted refractory metal after at least some of the wet chemical process has been performed, and controlling at least one parameter of the wet chemical process based upon the measured at least one characteristic of the portion of the layer of unreacted refractory metal.

    摘要翻译: 本发明一般涉及在形成金属硅化物区域中控制湿化学工艺的各种方法,以及用于执行其的系统。 在一个说明性实施例中,该方法包括提供具有未反应的难熔金属层和形成于其上的至少一个金属硅化物区域的基底,执行湿化学工艺以去除至少一部分未反应的难熔金属层,至少测量 在进行湿化学处理时,未反应的难熔金属层的一部分的一个特征,并且基于所测量的未反应的难熔金属层的该部分的至少一个特征来控制湿化学工艺的至少一个参数 。 在另一说明性实施例中,该方法包括提供具有未反应的难熔金属层和形成在其上方的至少一个金属硅化物区域的基底,执行湿化学工艺以去除至少一部分未反应的难熔金属层,至少测量 在进行了至少一些湿化学处理之后,未反应的难熔金属层的该部分的一个特征是基于所测定的层的该部分的至少一个特性来控制湿化学工艺的至少一个参数 的未反应的难熔金属。

    Measurement system for detecting chemical species within a semiconductor
processing device chamber
    15.
    发明授权
    Measurement system for detecting chemical species within a semiconductor processing device chamber 失效
    用于检测半导体处理装置室内的化学物质的测量系统

    公开(公告)号:US5999886A

    公开(公告)日:1999-12-07

    申请号:US923492

    申请日:1997-09-05

    IPC分类号: G01N33/00 G01N27/00

    CPC分类号: G01N33/0062

    摘要: A measurement system is presented for detecting the presence of one or more harmful chemical species within one or more chambers of a semiconductor wafer processing device. Chemical species of interest include oxygen (O.sub.2), nitrogen (N.sub.2), moisture (H.sub.2 O), and organic compounds associated with photoresist processing. Such organic compounds include isopropyl alcohol (CH.sub.3 CH(OH)CH.sub.3), acetone (CH.sub.3 COCH.sub.3), and ethyl-3-ethoxy propionate (C.sub.7 H.sub.14 O.sub.3). Candidate semiconductor wafer processing devices include evaporation, sputtering, and low pressure chemical vapor deposition (LPCVD) devices. The measurement system measures the concentrations of chemical species within each monitored chamber of the semiconductor wafer processing device: (i) during the processing of semiconductor wafers within the semiconductor wafer processing device, and (ii) during recovery periods following preventive maintenance or repair activities performed upon the semiconductor wafer processing device. Performing measurements during recovery periods aids in returning the semiconductor wafer processing device to service following preventive maintenance or repair activities. Data collection is not performed at other times (e.g., when the semiconductor wafer processing device is idle) in order to reduce data storage requirements. The measurement system includes one or more ambient sampling sensors coupled to a data collection computer through a control interface. Each ambient sampling sensor is in gaseous communication with ambients within the one or more monitored chambers. The control interface triggers data collection during the processing of one or more semiconductor wafers within the semiconductor wafer processing device, and following a maintenance activity performed upon the semiconductor wafer processing device.

    摘要翻译: 提供了一种用于检测在半导体晶片处理装置的一个或多个室内存在一种或多种有害化学物质的测量系统。 感兴趣的化学物质包括氧(O 2),氮(N 2),水分(H 2 O)和与光致抗蚀剂加工相关的有机化合物。 这些有机化合物包括异丙醇(CH 3 CH(OH)CH 3),丙酮(CH 3 COCH 3)和乙基-3-乙氧基丙酸酯(C 7 H 14 O 3)。 候选半导体晶片处理装置包括蒸发,溅射和低压化学气相沉积(LPCVD)装置。 测量系统测量半导体晶片处理装置的每个监测室内的化学物质的浓度:(i)在半导体晶片处理装置内的半导体晶片的处理期间,以及(ii)在执行预防性维护或修复活动之后的恢复期间 在半导体晶片处理装置上。 在恢复期间执行测量有助于将半导体晶片处理装置返回到维修之后进行预防性维护或维修活动。 在其他时间(例如当半导体晶片处理装置空闲时)不进行数据收集,以便减少数据存储要求。 测量系统包括通过控制接口耦合到数据采集计算机的一个或多个环境采样传感器。 每个环境采样传感器与一个或多个监测室内的环境气态连通。 控制接口在半导体晶片处理装置内的一个或多个半导体晶片的处理期间触发数据收集,并且跟随在半导体晶片处理装置上执行的维护活动。

    Device and method for aligning a laser
    16.
    发明授权
    Device and method for aligning a laser 失效
    激光对准的装置和方法

    公开(公告)号:US5686996A

    公开(公告)日:1997-11-11

    申请号:US450693

    申请日:1995-05-25

    CPC分类号: G01J1/4257 G01B11/272

    摘要: A device is provided for aligning a laser. For example, such a device could be used to align a laser as part of a particle measurement device in a semiconductor process tool. The device consists of a rigid member with alignment marks which define the intended point of impingement of a beam emitted from the laser. The laser is moved to allow the emitted laser beam to extend upon the alignment device and impinge upon the alignment marks. When the laser beam impinges upon alignment marks, preferably formed near the center of the alignment device, the laser is determined to be in proper alignment. The device is configured having a outer circumference equal to the terminating element which the device replaces during the alignment procedure. The device is then removed from the semiconductor process tool and the terminating element, either a beam stop or a photodiode detector, is re-inserted. A procedure utilizing relatively few steps for properly aligning the laser is thereby provided.

    摘要翻译: 提供了用于对准激光器的装置。 例如,这种装置可以用于将激光器作为半导体工艺工具中的粒子测量装置的一部分进行对准。 该装置由具有对准标记的刚性构件组成,其限定从激光器发射的光束的冲击的预期点。 激光被移动以允许发射的激光束在对准装置上延伸并撞击对准标记。 当激光束撞击对准标记时,优选地在对准装置的中心附近形成,激光被确定为正确对准。 该装置被配置为具有等于在对准过程期间设备替代的终止元件的外圆周。 然后将器件从半导体工艺工具中取出,并重新插入端接元件,光束停止或光电二极管检测器。 从而提供了使用相对较少的步骤以适当对准激光的步骤。

    Method and apparatus for dynamic adjustment of a sampling plan based on wafer electrical test data
    17.
    发明授权
    Method and apparatus for dynamic adjustment of a sampling plan based on wafer electrical test data 有权
    基于晶片电气测试数据的采样方案的动态调整方法和装置

    公开(公告)号:US07445945B1

    公开(公告)日:2008-11-04

    申请号:US11194843

    申请日:2005-08-01

    IPC分类号: H01L21/66 H01L21/00

    摘要: The present invention provides a method and apparatus for dynamic adjustment of a sampling plan. The method includes accessing wafer electrical test data associated with at least one workpiece that has been processed by at least one processing tool. The method also includes determining, based on the wafer electrical test data, at least one sampling plan for at least one measurement device configured to measure at least one parameter associated with workpieces processed by the at least one processing tool.

    摘要翻译: 本发明提供一种用于采样计划的动态调整的方法和装置。 该方法包括访问与由至少一个处理工具处理的至少一个工件相关联的晶片电测试数据。 该方法还包括基于晶片电测试数据确定至少一个测量装置的至少一个采样计划,该至少一个测量装置被配置成测量与由至少一个处理工具处理的工件相关联的至少一个参数。

    Method and apparatus for determining grid dimensions using scatterometry
    18.
    发明授权
    Method and apparatus for determining grid dimensions using scatterometry 有权
    使用散射法确定网格尺寸的方法和装置

    公开(公告)号:US07262864B1

    公开(公告)日:2007-08-28

    申请号:US09897573

    申请日:2001-07-02

    CPC分类号: G01B11/24 G03F7/70625

    摘要: A test structure includes a first plurality of lines and a second plurality of lines intersecting the first plurality of lines. The first and second pluralities of lines defining a grid having openings. A method for determining grid dimensions includes providing a wafer having a test structure comprising a plurality of intersecting lines that define a grid having openings; illuminating at least a portion of the grid with a light source; measuring light reflected from the illuminated portion of the grid to generate a reflection profile; and determining a dimension of the grid based on the reflection profile. A metrology tool is adapted to receive a wafer having a test structure comprising a plurality of intersecting lines that define a grid having openings. The metrology tool includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the grid. The detector is adapted to measure light reflected from the illuminated portion of the grid to generate a reflection profile. The data processing unit is adapted to determine a dimension of the grid based on the reflection profile.

    摘要翻译: 测试结构包括与第一组多行相交的第一多行和第二多行。 限定具有开口的网格的第一和第二多行线。 用于确定网格尺寸的方法包括提供具有测试结构的晶片,该测试结构包括限定具有开口的网格的多个相交线; 用光源照亮网格的至少一部分; 测量从所述格栅的被照亮部分反射的光以产生反射分布; 以及基于所述反射分布来确定所述网格的尺寸。 测量工具适于接收具有测试结构的晶片,该测试结构包括限定具有开口的格栅的多个相交线。 计量工具包括光源,检测器和数据处理单元。 光源适于照亮网格的至少一部分。 检测器适于测量从栅格的照明部分反射的光以产生反射分布。 数据处理单元适于基于反射分布来确定网格的尺寸。

    Method and apparatus for calibrating degradable components using process state data
    19.
    发明授权
    Method and apparatus for calibrating degradable components using process state data 有权
    使用过程状态数据校准可降解组分的方法和装置

    公开(公告)号:US07153709B1

    公开(公告)日:2006-12-26

    申请号:US10930257

    申请日:2004-08-31

    IPC分类号: H01L21/00

    摘要: The present invention is generally directed to various methods and systems for calibrating degradable components using process state data. In one illustrative embodiment, the method includes providing a tool comprised of at least one process chamber, providing at least one process state sensor that is adapted to obtain process state data regarding at least one characteristic of a process environment established in the chamber in performance of a process operation, operatively coupling at least one of a new or repaired degradable component to the tool, and calibrating the new or repaired degradable component based upon the process state data. In further embodiments, the method comprises processing a plurality of additional workpieces in the tool after the new or repaired degradable components have been calibrated using process state data in accordance with one aspect of the present invention.

    摘要翻译: 本发明一般涉及使用过程状态数据校准可降解组分的各种方法和系统。 在一个说明性实施例中,该方法包括提供由至少一个处理室组成的工具,提供至少一个过程状态传感器,该过程状态传感器适于获得关于室内建立的过程环境的至少一个特性的过程状态数据, 工艺操作,可操作地将新的或修复的可降解组分中的至少一种与工具结合,以及基于过程状态数据校准新的或修复的可降解组分。 在另外的实施例中,该方法包括在使用根据本发明的一个方面的过程状态数据校准新的或修复的可降解组分之后,在工具中处理多个附加工件。

    Methods of controlling formation of metal silicide regions, and system for performing same
    20.
    发明授权
    Methods of controlling formation of metal silicide regions, and system for performing same 有权
    控制金属硅化物区域的形成的方法及其执行方法

    公开(公告)号:US06815235B1

    公开(公告)日:2004-11-09

    申请号:US10304114

    申请日:2002-11-25

    申请人: Richard J. Markle

    发明人: Richard J. Markle

    IPC分类号: H01L3126

    摘要: The present invention is generally directed to various methods of controlling the formation of metal silicide regions, and a system for performing same. In one illustrative embodiment, the method comprises forming a layer of refractory metal above a feature, performing at least one anneal process to convert a portion of the layer of refractory metal to at least one metal silicide region on the feature, and measuring at least one characteristic of at least one metal silicide region while the anneal process is being performed. In another illustrative embodiment, the method comprises forming a layer of refractory metal above a feature, performing at least one anneal process to convert a portion of the layer of refractory metal to at least one metal silicide region on the feature, and performing at least one scatterometric measurement of the metal silicide region after at least a portion of the anneal process is performed to determine at least one characteristic of the metal silicide region.

    摘要翻译: 本发明一般涉及控制金属硅化物区域的形成的各种方法,以及用于执行其的系统。 在一个示例性实施例中,该方法包括在特征之上形成难熔金属层,执行至少一个退火工艺以将难熔金属层的一部分转换成特征上的至少一个金属硅化物区域,并测量至少一个 在进行退火处理时至少一个金属硅化物区域的特性。 在另一说明性实施例中,该方法包括在特征之上形成难熔金属层,执行至少一个退火工艺以将难熔金属层的一部分转换成特征上的至少一个金属硅化物区域,并执行至少一个 在退火处理的至少一部分进行金属硅化物区域的散射测量以确定金属硅化物区域的至少一个特征。