公开(公告)号：US06310401B1

公开(公告)日：2001-10-30

申请号：US09607053

申请日：2000-06-29

申请人： Michael Stoisiek ,  Guy Lefranc ,  Reinhold Bayerer ,  Rainer Leuschner

发明人： Michael Stoisiek ,  Guy Lefranc ,  Reinhold Bayerer ,  Rainer Leuschner

IPC分类号： H01L2940

CPC分类号： H01L23/60 ,  H01L23/49838 ,  H01L24/48 ,  H01L2224/05599 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01068 ,  H01L2924/1301 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/3011 ,  H05K1/0257 ,  H05K1/0306 ,  H05K1/167 ,  H05K3/4092 ,  H05K3/4629 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： A metallic-ceramic substrate having a ceramic layer and metal layers on both sides of the ceramic layer is provided with a high-impedance layer at the surface of the ceramic layer. The high-impedance layer is located adjacent to the metal layers. Therefore, the electrical field intensity at the edges of the metal layers is limited and an even distribution of the electrical potential at the surface of the ceramic layer is achieved. For example, the high-impedance layer may include a thin CrNi-layer, a doped Si-layer, an a—C:H-layer or a Ti-implantation.

摘要翻译： 在陶瓷层的两面上具有陶瓷层和金属层的金属陶瓷基板在陶瓷层的表面设置有高阻抗层。 高阻抗层位于金属层附近。 因此，金属层边缘的电场强度受到限制，陶瓷层表面的电位均匀分布。 例如，高阻抗层可以包括薄的CrNi层，掺杂的Si层，a-C：H层或Ti注入。

公开(公告)号：US4509069A

公开(公告)日：1985-04-02

申请号：US416333

申请日：1982-09-09

申请人： Michael Stoisiek

发明人： Michael Stoisiek

IPC分类号： H01L29/74 ,  H01L31/111

CPC分类号： H01L31/1113

摘要： A light-triggerable power thyristor having controllable emitter short circuits in the form of MIS transistors which are conductive in the blocking condition of the thyristor and suppressed during the ignition operation. An optically controlled npn lateral transistor is integrated on the cathode side of the thyristor in the light-irradiated emitter region, the collector of the npn lateral transistor being connected to the gates of the MIS transistors, its emitter being formed by a part of the thyristor emitter and its base consisting of a part of the p-base of the thyristor. The gates of the MIS transistors are connected to the anode of the thyristor over a charging resistor.

摘要翻译： 具有在晶闸管的阻塞状态下导通并在点火操作期间被抑制的MIS晶体管形式的可控发射极短路的可触发光功率晶闸管。 光控npn横向晶体管集成在光照射发射极区域的晶闸管的阴极侧，npn横向晶体管的集电极连接到MIS晶体管的栅极，其发射极由晶闸管的一部分 发射极及其基极由晶闸管的p基极的一部分组成。 MIS晶体管的栅极通过充电电阻连接到晶闸管的阳极。

公开(公告)号：US4509068A

公开(公告)日：1985-04-02

申请号：US413122

申请日：1982-08-30

申请人： Michael Stoisiek

发明人： Michael Stoisiek

IPC分类号： H01L29/74 ,  H01L29/749

CPC分类号： H01L29/7428 ,  H01L29/7404 ,  H01L29/7412 ,  H01L29/742

摘要： A power thyristor has controllable emitter short circuits in the form of MIS transistors which are conductive in the blocking condition of the thyristor and are switched off during the trigger operation. The ignition of the thyristor, including the control of the emitter short circuits, is accomplished in a simple manner from a gate trigger current pulse. To this end, a npn lateral transistor is integrated on the cathode side of the thyristor, the collector of the lateral transistor being connected to the gates of the MIS transistors, with its base consisting of a sub-region of the p-base and its emitter consisting of an edge region of the n-emitter of the thyristor. The gates of the MIS transistors are connected to the anode of the thyristor over a charging resistor.

摘要翻译： 功率晶闸管具有MIS晶体管形式的可控发射极短路，其在晶闸管的阻塞状态下导通，并且在触发操作期间被关断。 晶闸管的点火，包括发射极短路的控制，是通过栅极触发电流脉冲以简单的方式实现的。 为此，在晶闸管的阴极侧集成了npn横向晶体管，横向晶体管的集电极连接到MIS晶体管的栅极，其基极由p基极的子区域和 发射器由晶闸管的n发射极的边缘区域组成。 MIS晶体管的栅极通过充电电阻连接到晶闸管的阳极。

公开(公告)号：US20100311214A1

公开(公告)日：2010-12-09

申请号：US12593310

申请日：2008-03-26

申请人： Christoph Ellmers ,  Thomas Uhlig ,  Felix Fuernhammer ,  Michael Stoisiek ,  Michael Gross

发明人： Christoph Ellmers ,  Thomas Uhlig ,  Felix Fuernhammer ,  Michael Stoisiek ,  Michael Gross

IPC分类号： H01L21/8238

CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L27/0922

摘要： The invention relates to a method for the production of a first lateral high-voltage MOS transistor and a second lateral high-voltage MOS transistor complimentary thereto on a substrate, wherein the first and second lateral high-voltage MOS transistors each have a conductivity type opposite a drift region, comprising the steps of providing a substrate of a first conductivity type comprising a first active region for the first lateral high-voltage MOS transistor and a second active region for the second lateral high-voltage MOS transistor, and the producing at least one first doping region of the first conductivity type in the first active region and, on the other hand, in the second active region, a drain extension region of the first conductivity type extending from the substrate surface to the interior of the substrate, which allows a simultaneous implantation of doping material in the first and second active regions through respective mask openings of one and the same mask.

摘要翻译： 本发明涉及一种在衬底上制造第一横向高压MOS晶体管和与之互补的第二横向高压MOS晶体管的方法，其中第一和第二横向高压MOS晶体管各自具有相反的导电类型 漂移区域，包括以下步骤：提供包括第一横向高压MOS晶体管的第一有源区和第二横向高压MOS晶体管的第二有源区的第一导电类型的衬底，并且至少产生 第一有源区中第一导电类型的第一掺杂区域和第二有源区中的第一导电类型的漏极延伸区域从衬底表面延伸到衬底的内部，这允许 通过相同掩模的相应掩模开口同时将掺杂材料注入第一和第二有源区域。

公开(公告)号：US06388271B1

公开(公告)日：2002-05-14

申请号：US09523232

申请日：2000-03-10

申请人： Heinz Mitlehner ,  Michael Stoisiek

发明人： Heinz Mitlehner ,  Michael Stoisiek

IPC分类号： H01L310312

CPC分类号： H01L29/1608 ,  H01L21/8213 ,  H01L21/8258 ,  H01L27/0688 ,  H01L29/7393 ,  H01L29/7436 ,  H01L29/78624

摘要： The power semiconductor components in prior art high-voltage smart power ICs frequently take up more than half of the total chip surface. To be able to produce the ICs more economically, the material consumption must be reduced, and hence, in particular, the surfaces of the drift zones of the power semiconductor components must be made significantly smaller. Based on the premise that the electrical breakdown field strength of silicon carbide is approximately ten times higher than that of silicon, the parts of a semiconductor component which receive voltage are integrated in silicon carbide. The drift zone can be made much smaller for the same reverse voltage. In an SiC MOS transistor with lateral current conduction, the SiC layer, which is only approximately 1-2 &mgr;m thick and is covered by an SiO2 layer, is arranged so as to be dielectrically insulated on an Si substrate. Two n+-doped SiC regions are used as source and drain contacts. The electron-conducting channel is formed on that surface of a p+-doped region of the SiC layer which is opposite the gate electrode. The SiC drift zone, which is only weakly electron-conducting, adjoins the channel in the lateral direction.

摘要翻译： 现有技术的高压智能电力IC中的功率半导体元件经常占据整个芯片表面的一半以上。 为了能够更经济地制造IC，必须减少材料消耗，因此特别地，功率半导体部件的漂移区的表面必须显着更小。 基于碳化硅的电击穿场强比硅大约高十倍的前提，接收电压的半导体部件的部分集成在碳化硅中。 对于相同的反向电压，漂移区可以小得多。 在具有横向电流传导的SiC MOS晶体管中，仅仅大约1-2μm厚并被SiO 2层覆盖的SiC层被布置成在Si衬底上被介电绝缘。 两个n +掺杂的SiC区域用作源极和漏极触点。 电子传导通道形成在与栅电极相对的SiC层的p +掺杂区域的表面上。 只有弱电子传导的SiC漂移区在横向方向上与通道相邻。

公开(公告)号：US06191456B1

公开(公告)日：2001-02-20

申请号：US09344927

申请日：1999-06-28

申请人： Michael Stoisiek ,  Dirk Vietzke

发明人： Michael Stoisiek ,  Dirk Vietzke

IPC分类号： H01L2976

CPC分类号： H01L29/7394

摘要： A lateral IGBT in an SOI configuration having a top side and an underside is proposed. The lateral IGBT has a drain zone extending to the top side and is of a first conductivity type. The underside of the LIGBT forms a substrate of a second conductivity type. A lateral insulation layer is situated between the substrate and the drain zone. At least one laterally formed region of the second conductivity type is situated in the drain zone, in the vicinity of the lateral insulation layer. These laterally formed regions being spaced apart from one another lying in one plane.

摘要翻译： 提出了具有顶侧和下侧的SOI配置中的横向IGBT。 横向IGBT具有延伸到顶侧并具有第一导电类型的漏极区。 LIGBT的下侧形成第二导电类型的衬底。 横向绝缘层位于衬底和漏区之间。 第二导电类型的至少一个横向形成的区域位于排水区中，在侧绝缘层附近。 这些横向形成的区域彼此间隔开位于一个平面中。

公开(公告)号：US6157049A

公开(公告)日：2000-12-05

申请号：US152408

申请日：1998-09-14

申请人： Heinz Mitlehner ,  Michael Stoisiek

发明人： Heinz Mitlehner ,  Michael Stoisiek

IPC分类号： H01L27/00 ,  H01L27/04 ,  H01L27/085 ,  H01L29/12 ,  H01L29/20 ,  H01L29/24 ,  H01L29/739 ,  H01L29/78 ,  H01L29/808 ,  H01L29/866 ,  H01L33/00

CPC分类号： H01L29/1608 ,  H01L27/0688 ,  H01L27/085 ,  H03K17/567 ,  H01L29/2003 ,  H01L29/8083

摘要： A p-n junction is connected between two terminals. The p-n junction is formed between two semiconductor regions of a semiconductor with a breakdown field strength of at least 10.sup.6 V/cm. A channel region, which adjoins the p-n junction is connected in series with a silicon component between the two terminals. The channel region is provided in a first of the two semiconductor regions. A depletion zone of the p-n junction carries the reverse voltage in the off state of the silicon component. The silicon component is preferably a

摘要翻译： p-n结连接在两个终端之间。 p-n结形成在具有至少106V / cm的击穿场强的半导体的两个半导体区之间。 邻接p-n结的沟道区域与两个端子之间的硅部件串联连接。 沟道区域设置在两个半导体区域中的第一半导体区域中。 p-n结的耗尽区在硅组件的断开状态下携带反向电压。 硅成分优选为a

公开(公告)号：US5519241A

公开(公告)日：1996-05-21

申请号：US309875

申请日：1994-09-20

申请人： Klaus-Guenter Oppermann ,  Michael Stoisiek

发明人： Klaus-Guenter Oppermann ,  Michael Stoisiek

IPC分类号： H01L27/06 ,  H01L21/8249 ,  H01L29/739 ,  H01L29/78 ,  H01L29/786 ,  H01L27/02 ,  H01L23/48

CPC分类号： H01L29/7394 ,  H01L2924/0002

摘要： In a bipolar power component, for example an IGBT, having an emitter structure and a drift zone of the opposite conductivity type, the emitter structure is provided with a first contact and the drift zone is provided with a second contact. The first contact and the second contact are connected to a drivable resistor circuit such that, dependent on a control signal at the resistor circuit, the current through the power component optionally flows via the first contact and/or via the second contact to a third contact of the resistor circuit.

摘要翻译： 在具有发射极结构和相反导电类型的漂移区的双极功率元件例如IGBT中，发射极结构设置有第一接触，并且漂移区设置有第二接触。 第一触点和第二触点连接到可驱动电阻器电路，使得根据电阻器电路上的控制信号，通过功率部件的电流可选地经由第一触点和/或经由第二触点流到第三触点 的电阻电路。

公开(公告)号：US5291040A

公开(公告)日：1994-03-01

申请号：US759668

申请日：1991-09-13

申请人： Klaus-Guenter Oppermann ,  York Gerstenmaier ,  Michael Stoisiek

发明人： Klaus-Guenter Oppermann ,  York Gerstenmaier ,  Michael Stoisiek

IPC分类号： H01L29/744 ,  H01L29/74 ,  H01L29/745 ,  H01L29/00

CPC分类号： H01L29/7455 ,  H01L29/0649 ,  H01L29/102 ,  H01L29/32

摘要： An emitter of a thyristor is divided into a plurality of emitter regions. An electrode is provided next to each of these regions, and a turn-off current path proceeds via this electrode from the base adjoining the emitter region over a first field effect transistor to a main terminal of the thyristor. Every emitter region is also connected to this main terminal via a second field effect transistor which is integrated into the semiconductor body of the thyristor, or is manufactured in thin-film technology.

摘要翻译： 晶闸管的发射极被分成多个发射极区域。 在这些区域中的每一个旁边提供电极，并且关断电流路径经由该电极从与第一场效应晶体管相邻的发射极的基极延伸到晶闸管的主端子。 每个发射极区域也通过集成到晶闸管的半导体本体中的第二场效应晶体管连接到该主端子，或者以薄膜技术制造。