公开(公告)号：US5519241A

公开(公告)日：1996-05-21

申请号：US309875

申请日：1994-09-20

申请人： Klaus-Guenter Oppermann ,  Michael Stoisiek

发明人： Klaus-Guenter Oppermann ,  Michael Stoisiek

IPC分类号： H01L27/06 ,  H01L21/8249 ,  H01L29/739 ,  H01L29/78 ,  H01L29/786 ,  H01L27/02 ,  H01L23/48

CPC分类号： H01L29/7394 ,  H01L2924/0002

摘要： In a bipolar power component, for example an IGBT, having an emitter structure and a drift zone of the opposite conductivity type, the emitter structure is provided with a first contact and the drift zone is provided with a second contact. The first contact and the second contact are connected to a drivable resistor circuit such that, dependent on a control signal at the resistor circuit, the current through the power component optionally flows via the first contact and/or via the second contact to a third contact of the resistor circuit.

摘要翻译： 在具有发射极结构和相反导电类型的漂移区的双极功率元件例如IGBT中，发射极结构设置有第一接触，并且漂移区设置有第二接触。 第一触点和第二触点连接到可驱动电阻器电路，使得根据电阻器电路上的控制信号，通过功率部件的电流可选地经由第一触点和/或经由第二触点流到第三触点 的电阻电路。

公开(公告)号：US5291040A

公开(公告)日：1994-03-01

申请号：US759668

申请日：1991-09-13

申请人： Klaus-Guenter Oppermann ,  York Gerstenmaier ,  Michael Stoisiek

发明人： Klaus-Guenter Oppermann ,  York Gerstenmaier ,  Michael Stoisiek

IPC分类号： H01L29/744 ,  H01L29/74 ,  H01L29/745 ,  H01L29/00

CPC分类号： H01L29/7455 ,  H01L29/0649 ,  H01L29/102 ,  H01L29/32

摘要： An emitter of a thyristor is divided into a plurality of emitter regions. An electrode is provided next to each of these regions, and a turn-off current path proceeds via this electrode from the base adjoining the emitter region over a first field effect transistor to a main terminal of the thyristor. Every emitter region is also connected to this main terminal via a second field effect transistor which is integrated into the semiconductor body of the thyristor, or is manufactured in thin-film technology.

摘要翻译： 晶闸管的发射极被分成多个发射极区域。 在这些区域中的每一个旁边提供电极，并且关断电流路径经由该电极从与第一场效应晶体管相邻的发射极的基极延伸到晶闸管的主端子。 每个发射极区域也通过集成到晶闸管的半导体本体中的第二场效应晶体管连接到该主端子，或者以薄膜技术制造。

公开(公告)号：US20060191868A1

公开(公告)日：2006-08-31

申请号：US11346605

申请日：2006-02-02

申请人： Martin Franosch ,  Andreas Meckes ,  Klaus-Guenter Oppermann

发明人： Martin Franosch ,  Andreas Meckes ,  Klaus-Guenter Oppermann

IPC分类号： B44C1/22 ,  H01L21/302 ,  C23F1/00

CPC分类号： B81C1/00539 ,  B81B2203/0127

摘要： In the inventive method for the wet-chemical removal of a sacrificial material in a material structure, there is first provided the material structure, wherein the material structure has a treatment region with the sacrificial material accessible through an opening. Subsequently, the sacrificial material is brought into contact with a wet-chemical treatment agent through the opening for the removal of the sacrificial material, wherein a mechanical vibration is generated in the wet-chemical treatment agent or in the wet-chemical treatment agent and the material structure during the contacting of the sacrificial material with the wet-chemical treatment agent.

摘要翻译： 在用于在材料结构中湿化学去除牺牲材料的本发明的方法中，首先提供材料结构，其中材料结构具有处理区域，其中牺牲材料可通过开口接近。 随后，牺牲材料通过用于去除牺牲材料的开口与湿化学处理剂接触，其中在湿化学处理剂或湿化学处理剂中产生机械振动， 在牺牲材料与湿化学处理剂接触期间的材料结构。

公开(公告)号：US08618621B2

公开(公告)日：2013-12-31

申请号：US12938568

申请日：2010-11-03

申请人： Klaus-Guenter Oppermann ,  Martin Franosch ,  Martin Handtmann

发明人： Klaus-Guenter Oppermann ,  Martin Franosch ,  Martin Handtmann

IPC分类号： H01L29/84

CPC分类号： H03H9/02125 ,  H01L21/6835 ,  H01L23/3121 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/68368 ,  H01L2224/0401 ,  H01L2224/11002 ,  H01L2224/16225 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00

摘要： An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.

摘要翻译： 一种装置包括器件层结构，集成到器件层结构中的器件，绝缘载体衬底和绝缘层，其连续地位于器件层结构和绝缘载体衬底之间，绝缘层的厚度小于1 绝缘载体基板的厚度的1/10。 一种装置还包括集成在设置在绝缘层上的器件层结构中的器件，设置在器件层结构上并容纳该器件的壳体层，提供该器件与壳体层相对的表面之间的电连接的触点 所述器件层结构和围绕所述壳体层和所述绝缘层的模制材料，所述模制材料直接邻接在所述绝缘层的与所述器件层结构相对的表面上。

公开(公告)号：US20090179333A1

公开(公告)日：2009-07-16

申请号：US11972793

申请日：2008-01-11

申请人： Alfred Martin ,  Barbara Hasler ,  Martin Franosch ,  Klaus-Guenter Oppermann

发明人： Alfred Martin ,  Barbara Hasler ,  Martin Franosch ,  Klaus-Guenter Oppermann

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H05K3/3452 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/05569 ,  H01L2224/0557 ,  H01L2224/05611 ,  H01L2224/05613 ,  H01L2224/05616 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06136 ,  H01L2224/10125 ,  H01L2224/10145 ,  H01L2224/11013 ,  H01L2224/11332 ,  H01L2224/11334 ,  H01L2224/11422 ,  H01L2224/11622 ,  H01L2224/1181 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13012 ,  H01L2224/13014 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/8109 ,  H01L2224/81205 ,  H01L2224/8123 ,  H01L2224/81815 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1432 ,  H01L2924/1434 ,  H01L2924/1436 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H05K3/3484 ,  H05K2201/0989 ,  H05K2201/2081 ,  H05K2203/043 ,  H01L2924/00014 ,  H01L2224/05552

摘要： An integrated circuit that comprises a substrate and a structured layer on the substrate. The structured layer comprises an opening to the substrate, a first field and a second field on the substrate, wherein the first field and the second field, at least in part, overlap with the opening. The integrated circuit further comprises a first material in the area of the first field and a second material in the area of the second field. The first material impedes a wetting by a solder material, and the second provides a wetting by the solder material.

摘要翻译： 一种集成电路，包括衬底和衬底上的结构化层。 所述结构化层包括到所述衬底的开口，所述衬底上的第一场和第二场，其中所述第一场和所述第二场至少部分地与所述开口重叠。 集成电路还包括第一场区域中的第一材料和第二场区域中的第二材料。 第一种材料阻碍焊料材料的润湿，第二种材料通过焊料材料而被润湿。

公开(公告)号：US20060183325A1

公开(公告)日：2006-08-17

申请号：US11331434

申请日：2006-01-12

申请人： Martin Franosch ,  Klaus-Guenter Oppermann

发明人： Martin Franosch ,  Klaus-Guenter Oppermann

IPC分类号： H01L21/44

CPC分类号： H01L21/0272 ,  G03F7/38 ,  G03F7/40

摘要： A lift-off method includes providing a material structure, applying photoresist on a surface of the material structure, partially exposing the photoresist, baking the material structure with the partially exposed photoresist applied on the surface of the material structure, developing the photoresist with an organic, polar developer, so that the photoresist is removed in a first region of the surface, and the photoresist remains in the second region of the surface, applying coating material on the surface of the material structure and the remaining photoresist, and removing the photoresist.

摘要翻译： 剥离方法包括提供材料结构，在材料结构的表面上施加光致抗蚀剂，部分地曝光光致抗蚀剂，用施加在材料结构表面上的部分曝光的光致抗蚀剂烘烤材料结构，用有机 极性显影剂，使得在表面的第一区域中去除光致抗蚀剂，并且光致抗蚀剂保留在表面的第二区域中，将涂料涂覆在材料结构的表面上，并除去光致抗蚀剂。

公开(公告)号：US20050079686A1

公开(公告)日：2005-04-14

申请号：US10921087

申请日：2004-08-18

申请人： Robert Aigner ,  Martin Franosch ,  Andreas Meckes ,  Klaus-Guenter Oppermann ,  Marc Strasser

发明人： Robert Aigner ,  Martin Franosch ,  Andreas Meckes ,  Klaus-Guenter Oppermann ,  Marc Strasser

IPC分类号： H03H9/10 ,  H01L21/00 ,  H01L21/30 ,  H01L21/48

CPC分类号： H03H9/1071 ,  H03H9/105

摘要： In a method for producing a cover for a region of a substrate, first a frame structure is produced in the region of the substrate, and then a cap structure is attached to the frame structure so that the region under the cap structure is covered. Thus, sensitive devices may be protected easily and at low cost from external influences and particularly from a casting material for casting the entire packaged device, which results when a diced chip is cast.

摘要翻译： 在用于制造基板区域的盖的方法中，首先在基板的区域中制造框架结构，然后将盖结构附接到框架结构，使得盖结构下方的区域被覆盖。 因此，敏感装置可以容易地以低成本保护外部影响，特别是用于铸造整个封装装置的铸造材料，这在铸造切割的芯片时产生。

公开(公告)号：US08209826B2

公开(公告)日：2012-07-03

申请号：US12110961

申请日：2008-04-28

申请人： Martin Handtmann ,  Klaus-Guenter Oppermann ,  Martin Fritz

发明人： Martin Handtmann ,  Klaus-Guenter Oppermann ,  Martin Fritz

IPC分类号： H04R17/00 ,  C23F1/00

CPC分类号： H03H3/02 ,  H03H9/584 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49156

摘要： A method for manufacturing a coupled resonator device includes forming a first BAW-device on a first substrate, forming a second BAW-device on a second substrate, and bonding the first and the second BAW-device such that the bonded first and second BAW-device are sandwiched between the first and second substrate.

摘要翻译： 一种耦合谐振器装置的制造方法包括在第一基板上形成第一BAW器件，在第二基板上形成第二BAW器件，以及将第一和第二BAW器件接合，使得结合的第一和第二BAW- 器件夹在第一和第二衬底之间。

公开(公告)号：US08188548B2

公开(公告)日：2012-05-29

申请号：US11706558

申请日：2007-02-15

申请人： Klaus-Guenter Oppermann

发明人： Klaus-Guenter Oppermann

IPC分类号： H01L29/78

CPC分类号： H03H9/02125 ,  H01L21/26513

摘要： A device comprises a first means for separating a conductive layer from a semiconductor substrate and a second means for reducing a voltage dependent capacitive coupling between the conductive layer and the semiconductor substrate.

摘要翻译： 一种器件包括用于从半导体衬底分离导电层的第一装置和用于减小导电层和半导体衬底之间的电压依赖性电容耦合的第二装置。

公开(公告)号：US07851333B2

公开(公告)日：2010-12-14

申请号：US11724603

申请日：2007-03-15

申请人： Klaus-Guenter Oppermann ,  Martin Franosch ,  Martin Handtmann

发明人： Klaus-Guenter Oppermann ,  Martin Franosch ,  Martin Handtmann

IPC分类号： H01L21/00

CPC分类号： H03H9/02125 ,  H01L21/6835 ,  H01L23/3121 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/96 ,  H01L24/97 ,  H01L2221/68368 ,  H01L2224/0401 ,  H01L2224/11002 ,  H01L2224/16225 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00

摘要： An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.

摘要翻译： 一种装置包括器件层结构，集成到器件层结构中的器件，绝缘载体衬底和绝缘层，其连续地位于器件层结构和绝缘载体衬底之间，绝缘层的厚度小于1 绝缘载体基板的厚度的1/10。 一种装置还包括集成在设置在绝缘层上的器件层结构中的器件，设置在器件层结构上并容纳该器件的壳体层，提供该器件与壳体层相对的表面之间的电连接的触点 所述器件层结构和围绕所述壳体层和所述绝缘层的模制材料，所述模制材料直接邻接在所述绝缘层的与所述器件层结构相对的表面上。