摘要:
An acoustic wave device includes a piezoelectric substrate, a first dielectric film formed on the piezoelectric substrate, and electrodes that are provided on the first dielectric film and excite an acoustic wave, the electrodes including electrode fingers. At least a part of the first dielectric film is cut out between adjacent electrode fingers among the electrode fingers.
摘要:
An acoustic boundary wave device includes a first medium having piezoelectricity, electrodes that are provided on the first medium and excite acoustic waves, a second medium made of a material different from the first medium and provided on the first medium so as to cover the electrodes, and a third medium that has a heat conductivity higher than that of the second medium and is provided so as to contact an upper surface of the second medium and at least a part of side surfaces of the second medium.
摘要:
An acoustic wave device includes a piezoelectric substrate, comb electrodes formed above the piezoelectric substrate, and a first dielectric film provided so as to cover the comb electrodes, the first dielectric film having empty spaces associated with fingers of the comb electrodes.
摘要:
An acoustic boundary wave device includes a first medium having piezoelectricity, electrodes that are provided on the first medium and excite acoustic waves, a second medium made of a material different from the first medium and provided on the first medium so as to cover the electrodes, and a third medium that has a heat conductivity higher than that of the second medium and is provided so as to contact an upper surface of the second medium and at least a part of side surfaces of the second medium.
摘要:
An elastic boundary wave device includes a LiNbO3 substrate, an electrode exciting an elastic wave and provided on the substrate, and a silicon oxide film provided on the substrate to cover the electrode, and parameters of the elastic boundary wave device have any one of ranges, where “θ” is a rotation Y cut angle of the substrate, “a” is a ratio of copper density with respect to a density of a material used as the electrode, “λ” is a wavelength of the elastic wave excited by the electrode, “h” is a film thickness of the electrode, “H” is a thickness of the silicon oxide film.
摘要:
An elastic boundary wave device includes a first medium with piezoelectricity, an electrode exciting an elastic wave and provided on the first medium, a second medium made of a different material from the first medium and provided on the first medium to cover the electrode, and a sound absorbing portion provided on the second medium.
摘要:
An elastic boundary wave device includes a first medium with piezoelectricity, an electrode exciting an elastic wave and provided on the first medium, a second medium made of a different material from the first medium and provided on the first medium to cover the electrode, and a sound absorbing portion provided on the second medium.
摘要:
A method of manufacturing a surface acoustic device that has a surface acoustic wave filter including comb-like electrodes, electrode pads, and wiring patterns formed on a joined substrate produced by joining a piezoelectric substrate and a supporting substrate to each other. This method includes the steps of: activating at least one of the joining surfaces of the piezoelectric substrate and the supporting substrate; and joining the piezoelectric substrate and the supporting substrate in such a manner that the activated joining surfaces face each other.
摘要:
A surface acoustic wave device includes a piezoelectric substrate having a first surface on which comb-like electrodes are formed, and a second surface, and a support substrate joined to the second surface of the piezoelectric substrate. The piezoelectric substrate is made of lithium, tantalate, and the support substrate is made of sapphire. The following expressions being satisfied: T/t 10 (2) where T is a thickness of the piezoelectric substrate, t is a thickness of the support substrate, and λ is a wavelength of a surface acoustic filter, propagated along the first surface of the piezoelectric substrate.
摘要翻译:表面声波装置包括具有形成有梳状电极的第一表面和第二表面的压电基板和连接到压电基板的第二表面的支撑基板。 压电基板由钽酸锂制成,支撑基板由蓝宝石制成。 满足以下表达式:<?in-line-formula description =“In-line Formulas”end =“lead”?> T / t <1/3(1)<?in-line-formula description =“In- 行公式“end =”tail“?> <?in-line-formula description =”In-line Formulas“end =”lead“?> T / lambda> 10(2)<?in-line-formula description = 在线公式“end =”tail“?>其中T是压电基板的厚度,t是支撑基板的厚度,λ是表面声滤波器的波长,沿着压电的第一表面传播 基质。
摘要:
A surface acoustic wave device includes multiple SAW resonators formed on a piezoelectric substrate and connected in a ladder arrangement, the piezoelectric substrate having a polarization inverted region on which either a series-arm resonator or a parallel-arm resonator is formed.