公开(公告)号：US06618417B2

公开(公告)日：2003-09-09

申请号：US09872334

申请日：2001-06-01

申请人： Michio Ohkubo ,  Yoshikazu Ikegami ,  Takeshi Namegaya ,  Akihiko Kasukawa

发明人： Michio Ohkubo ,  Yoshikazu Ikegami ,  Takeshi Namegaya ,  Akihiko Kasukawa

IPC分类号： H01S500

CPC分类号： H01S5/22 ,  H01S2301/18

摘要： A GaAs based semiconductor laser has a combination of cladding layers including a ridge structure part, and a remaining part which overlays the active layers of the laser, and an etch stop layer sandwiched between the ridge structure part and the remaining part. The remaining part preferably overlies the entire surface of laser active layers and has a thickness “D” which satisfies 1.1×W>D≧0.5×W wherein W is the width of a spot size having a strength of {fraction (1/e2)} as measured at the laser front facet in a direction perpendicular to the active layers, wherein “e” is the base of the natural logarithm. The semiconductor laser solves the kink phenomenon to obtain an excellent linear relationship between the optical output power and the injected current.

摘要翻译： GaAs基半导体激光器具有包括脊结构部分的覆盖层和覆盖激光器的有源层的剩余部分和夹在脊结构部分与其余部分之间的蚀刻停止层的组合。 其余部分优选地覆盖在激光有源层的整个表面上，并且具有满足1.1×W> D> = 0.5×W的厚度“D”，其中W是在激光下测量的强度为1 / e2的光点尺寸的宽度 在垂直于有源层的方向上的前刻面，其中“e”是自然对数的基础。 半导体激光器解决了扭结现象，以获得光输出功率和注入电流之间的良好的线性关系。

公开(公告)号：US07729395B2

公开(公告)日：2010-06-01

申请号：US11944540

申请日：2007-11-23

申请人： Michio Ohkubo ,  Hiroshi Matsuura

发明人： Michio Ohkubo ,  Hiroshi Matsuura

IPC分类号： H01S3/10 ,  H01S3/04

CPC分类号： G02F1/3534 ,  G02F1/37 ,  G02F2001/3548 ,  G02F2201/02

摘要： A wavelength conversion module according to the present invention includes an external resonator, a semiconductor laser module and a wavelength conversion device for converting a wavelength of light output from the semiconductor laser module into a shorter wavelength. This wavelength conversion device includes at least one of a nonlinear crystal for generating SFG (Sum-frequency Generation) light and a nonlinear crystal for generating SHG (Second Harmonic Generation) light. Each of the SFG generating element and the SHG generating element of the wavelength conversion device may have a periodically-poled ridge-waveguide structure or a periodically-poled proton-exchanged-waveguide structure.

摘要翻译： 根据本发明的波长转换模块包括外部谐振器，半导体激光器模块和用于将从半导体激光器模块输出的光的波长转换成较短波长的波长转换装置。 该波长转换装置包括用于产生SFG（和频产生）光的非线性晶体和用于产生SHG（第二谐波生成）光的非线性晶体中的至少一个。 波长转换装置的SFG生成元件和SHG生成元件中的每一个可以具有周期性极化的脊 - 波导结构或周期性极化的质子交换波导结构。

公开(公告)号：US07072373B2

公开(公告)日：2006-07-04

申请号：US10626104

申请日：2003-07-23

申请人： Michio Ohkubo ,  Yoshikazu Ikegami ,  Takeshi Namegaya ,  Akihiko Kasukawa ,  Junji Yoshida

发明人： Michio Ohkubo ,  Yoshikazu Ikegami ,  Takeshi Namegaya ,  Akihiko Kasukawa ,  Junji Yoshida

IPC分类号： H01S5/00

CPC分类号： H01S5/22 ,  H01S2301/18

摘要： A GaAs based semiconductor laser having a combination of cladding layers including a ridge structure part, and a remaining part which overlays the active layers of the laser, and an etch stop layer sandwiched between the ridge structure part and the remaining part. The remaining part preferably overlies the entire surface of laser active layers and has a thickness “D” which satisfies 1.1×W>D≧0.5×W wherein W is the width of a spot size having a strength of 1/e2 as measured at the laser front facet in a direction perpendicular to the active layers, wherein “e” is the base of the natural logarithm. The semiconductor laser solves the kink phenomenon to obtain an excellent linear relationship between the optical output power and the injected current.

摘要翻译： 一种GaAs基半导体激光器，其具有包括脊结构部分的包覆层和覆盖激光器的有源层的剩余部分和夹在脊部结构部分和其余部分之间的蚀刻停止层的组合。 其余部分优选地覆盖在激光有源层的整个表面上，并且具有满足1.1×W> D> = 0.5×W的厚度“D”，其中W是强度为1 / e 2的光点尺寸的宽度， / SUP>，在垂直于有源层的方向上在激光器前刻面处测量，其中“e”是自然对数的基数。 半导体激光器解决了扭结现象，以获得光输出功率和注入电流之间的良好的线性关系。

公开(公告)号：US20050238069A1

公开(公告)日：2005-10-27

申请号：US11075912

申请日：2005-03-10

申请人： Michio Ohkubo ,  Hiroshi Matsuura

发明人： Michio Ohkubo ,  Hiroshi Matsuura

IPC分类号： G02F1/35 ,  G02F1/37 ,  H01S3/10

CPC分类号： G02F1/3534 ,  G02F1/37 ,  G02F2001/3548 ,  G02F2201/02

摘要： A wavelength conversion module according to the present invention includes an external resonator, a semiconductor laser module and a wavelength conversion device for converting a wavelength of light output from the semiconductor laser module into a shorter wavelength. This wavelength conversion device includes at least one of a nonlinear crystal for generating SFG (Sum-frequency Generation) light and a nonlinear crystal for generating SHG (Second Harmonic Generation) light. Each of the SFG generating element and the SHG generating element of the wavelength conversion device may have a periodically-poled ridge-waveguide structure or a periodically-poled proton-exchanged-waveguide structure.

摘要翻译： 根据本发明的波长转换模块包括外部谐振器，半导体激光器模块和用于将从半导体激光器模块输出的光的波长转换成较短波长的波长转换装置。 该波长转换装置包括用于产生SFG（和频产生）光的非线性晶体和用于产生SHG（第二谐波生成）光的非线性晶体中的至少一个。 波长转换装置的SFG生成元件和SHG生成元件中的每一个可以具有周期性极化的脊 - 波导结构或周期性极化的质子交换波导结构。

公开(公告)号：US06853664B2

公开(公告)日：2005-02-08

申请号：US10372296

申请日：2003-02-25

申请人： Takeshi Shiojima ,  Keiichi Yabusaki ,  Michio Ohkubo

发明人： Takeshi Shiojima ,  Keiichi Yabusaki ,  Michio Ohkubo

IPC分类号： H01L21/308 ,  H01S5/16 ,  H01S5/20 ,  H01S5/22 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/22 ,  H01S5/16 ,  H01S5/166 ,  H01S5/2081 ,  H01S5/209 ,  H01S5/2214 ,  H01S5/323

摘要： The semiconductor laser element comprises, from bottom to top, the p-AlxGa1−xAs upper clad layer, p-AlyGa1−yAs resistance control layer, and p-GaAs cap layer (where x>y>0.2). A portion of only the resistance control layer and cap layer is selectively etched. The etchant used for this etching is a mixture of organic acid and hydrogen peroxide based mixture, has such a composition such that the ratio of dissolution rate of the upper clad layer to the cap layer is between 10 and 20, and pH is between 7.4 and 7.6.

摘要翻译： 半导体激光元件从底部到顶部包括p-Al x Ga 1-x As上覆层，p-AllyGa1-yAs电阻控制层和p-GaAs覆盖层（其中x> y> 0.2）。 选择性地蚀刻仅电阻控制层和盖层的一部分。 用于该蚀刻的蚀刻剂是有机酸和基于过氧化氢的混合物的混合物，具有这样的组成，使得上覆层与盖层的溶解速率之比在10和20之间，并且pH在7.4和 7.6。

公开(公告)号：US06847667B2

公开(公告)日：2005-01-25

申请号：US10802753

申请日：2004-03-18

申请人： Atsushi Ohkubo ,  Satoru Okada ,  Tsuyoshi Fujimoto ,  Takeshi Koiso ,  Kiyofumi Muro ,  Michio Ohkubo ,  Yutaka Ohki

发明人： Atsushi Ohkubo ,  Satoru Okada ,  Tsuyoshi Fujimoto ,  Takeshi Koiso ,  Kiyofumi Muro ,  Michio Ohkubo ,  Yutaka Ohki

IPC分类号： H01S5/022 ,  H01S5/065 ,  H01S5/14 ,  H01S5/34 ,  H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/02208 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/02438 ,  H01S5/0652 ,  H01S5/0656 ,  H01S5/146 ,  H01S5/34

摘要： A semiconductor laser device emitting a laser beam having stable emitting wavelength and a multimode spectrum is provided. The semiconductor laser device is a Fabry-Perot type semiconductor laser device having a layer structure including an active layer of a quantum well structure, and emitting a laser beam having wavelength stabilized by an action of return light and having a multimode spectrum, wherein each well layer satisfies relation: Γ/d≦1.3×10−3 nm−1 where Γ and d(nm) are an optical confinement factor and a thickness of a well layer, respectively.

摘要翻译： 提供了发射具有稳定发射波长和多模光谱的激光束的半导体激光装置。 半导体激光器件是具有包括量子阱结构的有源层的层结构的法布里 - 珀罗型半导体激光器件，并且发射具有通过返回光的作用而具有波长稳定并且具有多模光谱的波长的激光束，其中每个阱 层满足关系：其中Gamma和d（nm）分别是光限制因子和阱层的厚度。

公开(公告)号：US06549554B2

公开(公告)日：2003-04-15

申请号：US09852710

申请日：2001-05-11

申请人： Takeshi Shiojima ,  Keiichi Yabusaki ,  Michio Ohkubo

发明人： Takeshi Shiojima ,  Keiichi Yabusaki ,  Michio Ohkubo

IPC分类号： H01S319

CPC分类号： H01S5/22 ,  H01S5/16 ,  H01S5/166 ,  H01S5/2081 ,  H01S5/209 ,  H01S5/2214 ,  H01S5/323

摘要： The semiconductor laser element comprises, from bottom to top, the p-AlxGa1-xAs upper clad layer, p-AlyGa1-yAs resistance control layer, and p-GaAs cap layer (where x>y>0.2). A portion of only the resistance control layer and cap layer is selectively etched. The etchant used for this etching is a mixture of organic acid and hydrogen peroxide based mixture, has such a composition such that the ratio of dissolution rate of the upper clad layer to the cap layer is between 10 and 20, and pH is between 7.4 and 7.6.

摘要翻译： 半导体激光元件从底部到顶部包括p-Al x Ga 1-x As上覆层，p-AllyGa1-yAs电阻控制层和p-GaAs覆盖层（其中x> y> 0.2）。 选择性地蚀刻仅电阻控制层和盖层的一部分。 用于该蚀刻的蚀刻剂是有机酸和基于过氧化氢的混合物的混合物，具有这样的组成，使得上覆层与盖层的溶解速率之比在10和20之间，并且pH在7.4和 7.6。

公开(公告)号：US5962873A

公开(公告)日：1999-10-05

申请号：US943054

申请日：1997-10-02

申请人： Michio Ohkubo ,  Tetsuro Ijichi ,  Yoshikazu Ikegami

发明人： Michio Ohkubo ,  Tetsuro Ijichi ,  Yoshikazu Ikegami

IPC分类号： H01S5/00 ,  H01S5/028 ,  H01S5/16 ,  H01L33/00

CPC分类号： H01S5/164 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/3072

摘要： In a semiconductor laser device comprising a semiconductor laser main body having an active layer formed between a pair of cladding layers, and a non-absorbing layer of InGaP formed on the facets of the semiconductor laser main body and having a band gap greater than the band gap of the active layer,a diffusion blocking layer of, for example, Si, SiN or Ge is formed on the surface of the non-absorbing layer, and a di-electric protective layer of, for example, AlO.sub.x, SiO.sub.x, SiN.sub.x or MgO.sub.x for regulating reflectance at the facets and protecting the non-absorbing layer is formed on the diffusion blocking layer.

摘要翻译： 在包括形成在一对包层之间的有源层的半导体激光器主体和形成在半导体激光器主体的面上并具有大于带的带隙的InGaP的非吸收层的半导体激光器件中， 在非吸收层的表面上形成有源层的间隙，例如Si，SiN或Ge的扩散阻挡层，以及例如AlO x，SiO x，SiN x或 在扩散阻挡层上形成用于调节面的反射率和保护非吸收层的MgOx。

公开(公告)号：US5474146A

公开(公告)日：1995-12-12

申请号：US24830

申请日：1993-03-01

申请人： Toshiharu Yoshioka ,  Takashi Ohzeki ,  Hideaki Suzuki ,  Takumi Tottori ,  Munehito Nakamura ,  Mamoru Matsui ,  Michio Ohkubo ,  Kanau Iwashita

发明人： Toshiharu Yoshioka ,  Takashi Ohzeki ,  Hideaki Suzuki ,  Takumi Tottori ,  Munehito Nakamura ,  Mamoru Matsui ,  Michio Ohkubo ,  Kanau Iwashita

IPC分类号： B62K13/00 ,  B62M27/02 ,  B62D55/06

CPC分类号： B62M27/02 ,  B62K13/00 ,  B62M2027/021

摘要： A snow vehicle of the saddle-riding type utilizes essentially the same upper structure as a motorcycle but mounts a ski on the front fork for steering and an engine-driven endless belt track assembly for powering the device. The endless belt track assembly is arranged for mounting on a rear arm structure in order to maintain surface contact between the endless belt and the snow and thereby improve the operating efficiency of the vehicle. The arm may be pivotally mounted or integral with a rear fork pivotally mounted to the vehicle. An improved endless belt construction is described in which the belt is strengthened by core members and the driving cogs of particular configuration and disposed at prescribed locations with respect to the propelling lugs in order to maintain surface contact between the belt edge and the snow surface during cornering. Also disclosed are various forms of cover structures for the track assembly that prevent the scattering of snow from the belt onto the rider or vehicle parts. Grab rails attached to the rear swing arm elements facilitate manipulation of the vehicle in confined spaces. A stopper belt adjustment is also shown mounted to a rear fork with the stopper belt extruding to an articulated rear swing arm structure. The adjustment accommodates for adjustments to the drive chain for tensioning.

摘要翻译： 骑马式的雪车采用与摩托车基本上相同的上部结构，但是在用于转向的前叉上安装滑雪板以及用于为设备供电的发动机驱动的环形带轨道组件。 环形带轨道组件布置成安装在后臂结构上，以便保持环形带和雪之间的表面接触，从而提高车辆的操作效率。 臂可以枢转地安装或与枢转地安装到车辆的后叉形成一体。 描述了一种改进的环形带结构，其中通过铁芯构件和特定构造的驱动齿轮来加强带，并相对于推进凸耳设置在规定位置，以便在转弯期间保持带边缘和雪面之间的表面接触 。 还公开了用于轨道组件的各种形式的覆盖结构，其防止雪从皮带上散落到骑车人或车辆部件上。 连接到后摆臂元件的扶手有利于在密闭空间中操纵车辆。 止挡带调节装置还被安装到后叉上，止动带挤压到铰接的后摆臂结构。 该调整可适应用于张紧的驱动链条的调整。

公开(公告)号：US20080124806A1

公开(公告)日：2008-05-29

申请号：US11678885

申请日：2007-02-26

申请人： Kunihiro Noda ,  Ryo Asakura ,  Daisuke Saito ,  Tetsuhiko Isobe ,  Tomohiro Takagi ,  Hideki Aizawa ,  Michio Ohkubo

发明人： Kunihiro Noda ,  Ryo Asakura ,  Daisuke Saito ,  Tetsuhiko Isobe ,  Tomohiro Takagi ,  Hideki Aizawa ,  Michio Ohkubo

IPC分类号： G01N37/00

CPC分类号： G01N33/582 ,  B82Y15/00 ,  G01N33/585 ,  G01N33/588 ,  Y10T436/13

摘要： A fluorescent labeling reagent of the present invention includes an inorganic fluorescent particle and a material (A) having a material (B) of biological origin adsorbed or bound thereto. The inorganic fluorescent particle is integrated with the material (A) so as to form the reagent of the present invention. The inorganic fluorescent particle used in the present invention is capable of emitting light with a wavelength of 650 nm to 1600 nm in the infrared region or the near-infrared region which can be detected by means of Si-CCD or InGaAs-PD and can penetrate an H2O rich sample when excited by light with a wavelength of 650 nm or longer which has the shortest transparent wavelength of AlInGaP-LD including oxygen adsorption type hemoglobin used for DVDs etc.

摘要翻译： 本发明的荧光标记试剂包括无机荧光颗粒和具有吸附或结合生物学原料的材料（B）的材料（A）。 将无机荧光颗粒与材料（A）整合以形成本发明的试剂。 本发明中使用的无机荧光粒子能够通过Si-CCD或InGaAs-PD检测的红外区域或近红外区域发射波长为650nm〜1600nm的光，并能够穿透 当具有波长为650nm或更长的光，其具有包括用于DVD等的氧吸附型血红蛋白的AlInGaP-LD的最短透明波长激发时，富含H 2 O 2的样品。