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    Semiconductor laser apparatus
    2.
    发明授权
    Semiconductor laser apparatus 有权
    半导体激光装置

    公开(公告)号：US06546032B1

    公开(公告)日：2003-04-08

    申请号：US09644080

    申请日：2000-08-23

    申请人： Yasuo Oeda ,  Satoru Okada ,  Kouichi Igarashi ,  Yumi Naito ,  Kiyofumi Muro ,  Takeshi Koiso ,  Yoshikazu Yamada ,  Atsushi Okubo ,  Tsuyoshi Fujimoto

    发明人： Yasuo Oeda ,  Satoru Okada ,  Kouichi Igarashi ,  Yumi Naito ,  Kiyofumi Muro ,  Takeshi Koiso ,  Yoshikazu Yamada ,  Atsushi Okubo ,  Tsuyoshi Fujimoto

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/34313 ,  H01S5/34353

    摘要： On a substrate of n-type GaAs are sequentially formed an n-type cladding layer (AlGaAs, Al content x=0.07, thickness t=2.86 &mgr;m), an n-type optical waveguide layer (GaAs, t=0.49 &mgr;m), an n-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), an active layer (composed of an In0.18Ga0.82As quantum well layer and a GaAs barrier layer), a p-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), a p-type optical waveguide layer (GaAs, t=0.49 &mgr;m), a p-type cladding layer (AlGaAs, x=0.20, t=1.08 &mgr;m), and a p-type cap layer (GaAs) in which a pair of n-type current blocking layers (GaAs) are buried. With this construction, the occurrence of a wavelength spit due to a higher-order mode can be inhibited thereby stabilizing a higher power operation.

    摘要翻译： 在n型GaAs衬底上依次形成n型覆层（AlGaAs，Al含量x = 0.07，厚度t =2.86μm），n型光波导层（GaAs，t =0.49μm）， n型载流子阻挡层（AlGaAs，x = 0.40，t =0.03μm），有源层（由In0.18Ga0.82As量子阱层和GaAs势垒层构成），p型载流子阻挡层（AlGaAs ，p型光波导层（GaAs，t =0.49μm），p型覆层（AlGaAs，x = 0.20，t =1.08μm），p型光波导层 封装了一对n型电流阻挡层（GaAs）的封装层（GaAs）。 利用这种结构，可以抑制由高阶模式引起的波长吐出的发生，从而稳定高功率操作。

    Laser module
    4.
    发明授权
    Laser module 有权
    激光模块

    公开(公告)号：US07649921B2

    公开(公告)日：2010-01-19

    申请号：US10982855

    申请日：2004-11-08

    申请人： Naoki Hayamizu ,  Yutaka Ohki ,  Hideo Aoyagi ,  Takeshi Koiso ,  Yuji Yamagata ,  Kiyofumi Muro

    发明人： Naoki Hayamizu ,  Yutaka Ohki ,  Hideo Aoyagi ,  Takeshi Koiso ,  Yuji Yamagata ,  Kiyofumi Muro

    IPC分类号： H01S3/00 ,  H01S3/08

    CPC分类号： B82Y20/00 ,  H01S5/02208 ,  H01S5/02248 ,  H01S5/02415 ,  H01S5/02438 ,  H01S5/0652 ,  H01S5/0683 ,  H01S5/1039 ,  H01S5/146 ,  H01S5/2009 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/34313 ,  H01S2301/02

    摘要： A laser module includes a semiconductor laser element and a feedback optical component forming an external cavity with the semiconductor laser element. Even if a ratio of a current threshold of the laser module changing according to a polarized state of returned light from the feedback optical component to a current threshold of the semiconductor laser element is in an arbitrary range within a predetermined range, a total value of a relative intensity noise occurring between a first frequency determined according to a cavity length of the external cavity and at least equal to or more than a frequency band of using a laser light and a second frequency calculated by multiplying the first frequency by a predetermined number is equal to or more than −40 dB.

    摘要翻译： 激光模块包括半导体激光元件和形成具有半导体激光元件的外部空腔的反馈光学元件。 即使根据来自反馈光学分量的返回光的偏振状态改变为半导体激光元件的电流阈值的激光器模块的电流阈值的比例在预定范围内的任意范围内， 在根据外部空腔的腔长度确定的至少等于或大于使用激光的频带的第一频率和通过将第一频率乘以预定数量而计算的第二频率之间产生的相对强度噪声相等 至-40dB以上。

    Semiconductor laser device
    5.
    发明授权
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号：US06717186B2

    公开(公告)日：2004-04-06

    申请号：US10230988

    申请日：2002-08-30

    申请人： Tsuyoshi Fujimoto ,  Kiyofumi Muro ,  Takeshi Koiso

    发明人： Tsuyoshi Fujimoto ,  Kiyofumi Muro ,  Takeshi Koiso

    IPC分类号： H01L3300

    CPC分类号： H01S5/2231 ,  H01S5/2077 ,  H01S5/222

    摘要： A real index guided semiconductor laser device includes an optical waveguide layer at least on one side of an active layer that has a band gap energy not less than that of the active layer; a cladding layer on an outer side of the optical waveguide layer that has a band gap energy not less than that of the optical waveguide layer; a refractive index control layer having a striped window, buried in the optical waveguide layer by selective growth; and a semiconductor layer formed in the optical waveguide layer by selective growth prior to the selective growth of the refractive index control layer. In a laminated portion including the semiconductor layer and the refractive index control layer, a change in effective refractive index due to a change in thickness of the semiconductor layer is smaller than that of the refractive index control layer.

    摘要翻译： 实际的折射率引导半导体激光器件包括：有源层的至少一侧的光波导层，其具有不小于有源层的带隙能量; 在光波导层的外侧具有不小于光波导层的带隙能量的包层; 折射率控制层，其具有通过选择性生长掩埋在所述光波导层中的条纹窗口; 以及通过在折射率控制层的选择性生长之前的选择性生长而形成在光波导层中的半导体层。 在包括半导体层和折射率控制层的层叠部分中，由于半导体层的厚度变化引起的有效折射率的变化小于折射率控制层的变化。

    Semiconductor laser device
    6.
    发明授权
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号：US06822990B2

    公开(公告)日：2004-11-23

    申请号：US10129550

    申请日：2002-05-08

    申请人： Takeshi Koiso ,  Tsuyoshi Fujimoto

    发明人： Takeshi Koiso ,  Tsuyoshi Fujimoto

    IPC分类号： H01S500

    CPC分类号： H01S5/16 ,  B82Y20/00 ,  H01S5/164 ,  H01S5/168 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/34313 ,  H01S2304/04

    摘要： A semiconductor laser device comprises first current blocking layers formed to define a stripe-shaped current injected region extending in the direction in a front facet from which a laser light is emitted and a rear facet opposing thereto are connected, and a second current blocking layer formed to transverse the stripe-shaped current injected region in the vicinity of the front facet. The first current blocking layers and the second current blocking layer are made of the same layer. Accordingly, a current blocking structure is provided in the vicinity of the facet with the structure which is easily formed, causes no damage on the semiconductor laser device, and minimizes the property degradation, thereby a high facet COD level and high reliability in long-term continuous operations can be achieved.

    摘要翻译： 一种半导体激光器件包括：第一电流阻挡层，其形成为限定沿着前面的方向延伸的条状电流注入区域，激光从该方向发射，并且与之相对的后端面连接，形成第二电流阻挡层 横向前端附近的条纹电流注入区域。 第一电流阻挡层和第二电流阻挡层由相同的层制成。因此，在小面附近提供电流阻挡结构，其结构易于形成，不会对半导体激光器件造成损坏，并且 降低性能下降，从而可以实现高端的COD水平和长期连续操作的高可靠性。

    Vibration gyroscope
    7.
    发明授权
    Vibration gyroscope 失效
    振动陀螺仪

    公开(公告)号：US06209393B1

    公开(公告)日：2001-04-03

    申请号：US09091886

    申请日：1998-08-26

    申请人： Yoshiro Tomikawa ,  Kouichi Kanayama ,  Takeshi Koiso

    发明人： Yoshiro Tomikawa ,  Kouichi Kanayama ,  Takeshi Koiso

    IPC分类号： G01C1900

    CPC分类号： G01C19/5656

    摘要： A piezoelectric unit is composed of a plurality of piezoelectric elements. In one embodiment, a first driving electrode is provided over the whole surface of the lower surface of the piezoelectric element. A second driving electrode is provided over the whole surface between the piezoelectric elements. The driving electrodes are connected to a driving signal source. Detection electrodes are provided on the upper surface of the piezoelectric element. At least one of the detection electrodes is connected to one of the output terminals and at least another of the detection electrodes is connected to the other of the output electrodes. One piezoelectric element is polarized upward and another piezoelectric element is polarized downward. A vertical 1st order vibration is driven in a longitudinal direction and a 2nd order bending vibration is detected by the detection electrodes, and a voltage proportional to a coriolis force (rotational angular velocity) is outputted. With this construction, a vibration gyroscope having a reduced thickness and width can be produced.

    摘要翻译： 压电单元由多个压电元件构成。 在一个实施例中，第一驱动电极设置在压电元件的下表面的整个表面上。 第二驱动电极设置在压电元件之间的整个表面上。 驱动电极连接到驱动信号源。 检测电极设置在压电元件的上表面上。 至少一个检测电极连接到一个输出端子，并且至少另一个检测电极连接到另一个输出电极。 一个压电元件向上极化，另一个压电元件向下极化。 垂直一级振动沿长度方向驱动，并且由检测电极检测二阶弯曲振动，并输出与科里奥利力（旋转角速度）成比例的电压。 利用这种结构，可以制造具有减小的厚度和宽度的振动陀螺仪。