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公开(公告)号：US20150213891A1
公开(公告)日：2015-07-30
申请号：US14679781
申请日：2015-04-06
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Paolo Fantini , Massimo Ferro
IPC: G11C13/00
CPC classification number: G11C13/0069 , G11C13/0004 , G11C13/0033 , G11C13/0061 , G11C2013/0092
Abstract: Methods and apparatus for programming memory cells in a memory array are disclosed. A most recent programming time is determined, the most recent programming time being a time when a most recent programming operation was applied to a reference memory cell in the memory array. A programming signal is then applied to a target memory cell in the memory array, the programming signal having a programming parameter which depends at least in part on the most recent programming time.
Abstract translation: 公开了一种用于对存储器阵列中的存储器单元进行编程的方法和装置。 确定最近的编程时间，最近的编程时间是将最近的编程操作应用于存储器阵列中的参考存储器单元的时间。 然后将编程信号施加到存储器阵列中的目标存储器单元，编程信号具有至少部分地取决于最近编程时间的编程参数。
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公开(公告)号：US09001573B1
公开(公告)日：2015-04-07
申请号：US14099754
申请日：2013-12-06
Applicant: Micron Technology, Inc.
Inventor： Paolo Fantini , Massimo Ferro
IPC: G11C13/00
CPC classification number: G11C13/0069 , G11C13/0004 , G11C13/0033 , G11C13/0061 , G11C2013/0092
Abstract: Methods and apparatus for programming memory cells in a memory array are disclosed. A most recent programming time is determined, the most recent programming time being a time when a most recent programming operation was applied to a reference memory cell in the memory array. A programming signal is then applied to a target memory cell in the memory array, the programming signal having a programming parameter which depends at least in part on the most recent programming time.
Abstract translation: 公开了一种用于对存储器阵列中的存储器单元进行编程的方法和装置。 确定最近的编程时间，最近的编程时间是将最近的编程操作应用于存储器阵列中的参考存储器单元的时间。 然后将编程信号施加到存储器阵列中的目标存储器单元，编程信号具有至少部分地取决于最近编程时间的编程参数。
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公开(公告)号：US10957388B2
公开(公告)日：2021-03-23
申请号：US16671123
申请日：2019-10-31
Applicant: Micron Technology, Inc.
Inventor： Paolo Fantini , Massimo Ferro
Abstract: Embodiments disclosed herein may relate to programming a multi-level memory cell with programming pulse sequences that comprise forward-biased and reverse-biased programming pulses.
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公开(公告)号：US10141052B2
公开(公告)日：2018-11-27
申请号：US15624551
申请日：2017-06-15
Applicant: Micron Technology, Inc.
Inventor： Alessio Spessot , Paolo Fantini , Massimo Ferro
Abstract: Embodiments disclosed herein may relate to adjusting an aspect of a programming pulse for one or more memory cells, such as based at least in part on one or more detected programmed resistance values for the one or more memory cells.
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公开(公告)号：US09858999B2
公开(公告)日：2018-01-02
申请号：US14970911
申请日：2015-12-16
Applicant: Micron Technology, Inc.
Inventor： Alessandro Calderoni , Massimo Ferro , Paolo Fantini
CPC classification number: G11C13/004 , G11C11/00 , G11C11/5678 , G11C13/0002 , G11C13/0004 , G11C13/0035 , G11C13/0069 , G11C13/0097 , G11C29/006 , G11C29/50008 , G11C2013/0052 , G11C2013/0057
Abstract: The present disclosure includes apparatuses and methods including drift acceleration in resistance variable memory. A number of embodiments include applying a programming signal to the resistance variable memory cell to program the cell to a target state, subsequently applying a pre-read signal to the resistance variable memory cell to accelerate a drift of a resistance of the programmed cell, and subsequently applying a read signal to the resistance variable memory cell.
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Patent Agency Ranking
公开(公告)号：US09613695B2
公开(公告)日：2017-04-04
申请号：US14827024
申请日：2015-08-14
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Alessio Spessot , Paolo Fantini , Massimo Ferro
CPC classification number: G11C13/0069 , G11C11/5678 , G11C13/0004 , G11C2213/52
Abstract: Memory cells, devices and methods are disclosed, including those that involve applying a waveform to a resistive memory cell to program the memory cell to an over-reset state representing a logic value.
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公开(公告)号：US20160172030A1
公开(公告)日：2016-06-16
申请号：US14941365
申请日：2015-11-13
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Alessio Spessot , Paolo Fantini , Massimo Ferro
IPC: G11C13/00
CPC classification number: G11C13/0064 , G11C13/0002 , G11C13/0004 , G11C13/004 , G11C13/0069 , G11C2013/0066 , G11C2013/0076 , G11C2013/0083 , G11C2013/0092
Abstract: Embodiments disclosed herein may relate to adjusting an aspect of a programming pulse for one or more memory cells, such as based at least in part on one or more detected programmed resistance values for the one or more memory cells.
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公开(公告)号：US20160104530A1
公开(公告)日：2016-04-14
申请号：US14970911
申请日：2015-12-16
Applicant: Micron Technology, Inc.
Inventor： Alessandro Calderoni , Massimo Ferro , Paolo Fantini
IPC: G11C13/00
CPC classification number: G11C13/004 , G11C11/00 , G11C11/5678 , G11C13/0002 , G11C13/0004 , G11C13/0035 , G11C13/0069 , G11C13/0097 , G11C29/006 , G11C29/50008 , G11C2013/0052 , G11C2013/0057
Abstract: The present disclosure includes apparatuses and methods including drift acceleration in resistance variable memory. A number of embodiments include applying a programming signal to the resistance variable memory cell to program the cell to a target state, subsequently applying a pre-read signal to the resistance variable memory cell to accelerate a drift of a resistance of the programmed cell, and subsequently applying a read signal to the resistance variable memory cell.
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公开(公告)号：US20150294718A1
公开(公告)日：2015-10-15
申请号：US14750525
申请日：2015-06-25
Applicant: Micron Technology, Inc.
Inventor： Alessandro Calderoni , Massimo Ferro , Paolo Fantini
CPC classification number: G11C13/004 , G11C11/00 , G11C11/5678 , G11C13/0002 , G11C13/0004 , G11C13/0035 , G11C13/0069 , G11C13/0097 , G11C29/006 , G11C29/50008 , G11C2013/0052 , G11C2013/0057
Abstract: The present disclosure includes apparatuses and methods including drift acceleration in resistance variable memory. A number of embodiments include applying a programming signal to the resistance variable memory cell to program the cell to a target state, subsequently applying a pre-read signal to the resistance variable memory cell to accelerate a drift of a resistance of the programmed cell, and subsequently applying a read signal to the resistance variable memory cell.
Abstract translation: 本公开包括包括电阻变化存储器中的漂移加速度的装置和方法。 许多实施例包括将编程信号施加到电阻可变存储单元以将该单元编程到目标状态，随后将预读信号施加到电阻可变存储单元以加速编程单元电阻的漂移，以及 随后向电阻变化存储单元施加读取信号。
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公开(公告)号：US10803938B2
公开(公告)日：2020-10-13
申请号：US16536159
申请日：2019-08-08
Applicant: Micron Technology, Inc.
Inventor： Alessio Spessot , Paolo Fantini , Massimo Ferro
Abstract: Embodiments disclosed herein may relate to adjusting an aspect of a programming pulse for one or more memory cells, such as based at least in part on one or more detected programmed resistance values for the one or more memory cells.
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