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公开(公告)号：US10650891B2
公开(公告)日：2020-05-12
申请号：US16419895
申请日：2019-05-22
Applicant: Micron Technology, Inc.
Inventor： Amitava Majumdar , Rajesh Kamana , Hongmei Wang , Shawn D. Lyonsmith , Ervin T. Hill , Zengtao T. Liu , Marlon W. Hug
Abstract: Methods, systems, and devices for non-contact electron beam probing techniques, including at one or more intermediate stages of fabrication, are described. One subset of first access lines may be grounded and coupled with one or more memory cells. A second subset of first access lines may be floating and coupled with one or more memory cells. A second access line may correspond to each first access line and may be configured to be coupled with the corresponding first access line, by way of one or more corresponding memory cells, when scanned with an electron beam. A leakage path may be determined by comparing an optical pattern generated in part by determining a brightness of each scanned access line and comparing the generated optical pattern with a second optical pattern.
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公开(公告)号：US20200051235A1
公开(公告)日：2020-02-13
申请号：US16100729
申请日：2018-08-10
Applicant: Micron Technology, Inc.
Inventor： Amitava Majumdar , Qianlan Liu , Pradeep Ramachandran , Shawn D. Lyonsmith , Steve K. McCandless , Ted L. Taylor , Ahmed N. Noemaun , Gordon A. Haller
Abstract: A method of predicting virtual metrology data for a wafer lot that includes receiving first image data from an imager system, the first image data relating to at least one first wafer lot, receiving measured metrology data from metrology equipment relating to the at least one first wafer lot, applying one or more machine learning techniques to the first image data and the measured metrology data to generate at least one predictive model for predicting at least one of virtual metrology data or virtual cell metrics data of wafer lots, and utilizing the at least one generated predictive model to generate at least one of first virtual metrology data or first virtual cell metrics data for the first wafer lot.
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公开(公告)号：US20190341122A1
公开(公告)日：2019-11-07
申请号：US16419885
申请日：2019-05-22
Applicant: Micron Technology, Inc.
Inventor： Amitava Majumdar , Rajesh Kamana , Hongmei Wang , Shawn D. Lyonsmith , Ervin T. Hill , Zengtao T. Liu , Marlon W. Hug
Abstract: Methods, systems, and devices for non-contact measurement of memory cell threshold voltage, including at one or more intermediate stages of fabrication, are described. One access line may be grounded and coupled with one or more memory cells. Each of the one or more memory cells may be coupled with a corresponding floating access line. A floating access line may be scanned with an electron beam configured to set the floating access line to a particular surface voltage at the scanned bit line, and the threshold voltage of the corresponding memory cell may be determined based on whether setting the scanned bit line to the surface voltage causes a detectable amount current to flow through the corresponding memory cell.
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Patent Agency Ranking
公开(公告)号：US10381101B2
公开(公告)日：2019-08-13
申请号：US15849262
申请日：2017-12-20
Applicant: Micron Technology, Inc.
Inventor： Amitava Majumdar , Rajesh Kamana , Hongmei Wang , Shawn D. Lyonsmith , Ervin T. Hill , Zengtao T. Liu , Marlon W. Hug
Abstract: Methods, systems, and devices for non-contact measurement of memory cell threshold voltage, including at one or more intermediate stages of fabrication, are described. One access line may be grounded and coupled with one or more memory cells. Each of the one or more memory cells may be coupled with a corresponding floating access line. A floating access line may be scanned with an electron beam configured to set the floating access line to a particular surface voltage at the scanned bit line, and the threshold voltage of the corresponding memory cell may be determined based on whether setting the scanned bit line to the surface voltage causes a detectable amount current to flow through the corresponding memory cell.
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公开(公告)号：US20190189209A1
公开(公告)日：2019-06-20
申请号：US15918662
申请日：2018-03-12
Applicant: Micron Technology, Inc.
Inventor： Amitava Majumdar , Rajesh Kamana , Hongmei Wang , Shawn D. Lyonsmith , Ervin T. Hill , Zengtao T. Liu , Marlon W. Hug
CPC classification number: G11C13/048 , G11C7/005 , G11C13/0004 , G11C13/003 , G11C13/004 , G11C29/02 , G11C29/025 , G11C29/50004 , G11C29/56008 , G11C29/56016 , G11C2029/5602 , G11C2213/76
Abstract: Methods, systems, and devices for non-contact electron beam probing techniques, including at one or more intermediate stages of fabrication, are described. One subset of first access lines may be grounded and coupled with one or more memory cells. A second subset of first access lines may be floating and coupled with one or more memory cells. A second access line may correspond to each first access line and may be configured to be coupled with the corresponding first access line, by way of one or more corresponding memory cells, when scanned with an electron beam. A leakage path may be determined by comparing an optical pattern generated in part by determining a brightness of each scanned access line and comparing the generated optical pattern with a second optical pattern.
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公开(公告)号：US20240153062A1
公开(公告)日：2024-05-09
申请号：US18406485
申请日：2024-01-08
Applicant: Micron Technology, Inc.
Inventor： Amitava Majumdar , Qianlan Liu , Pradeep Ramachandran , Shawn D. Lyonsmith , Steve K. McCandless , Ted L. Taylor , Ahmed N. Noemaun , Gordon A. Haller
CPC classification number: G06T7/0004 , G01B1/00 , G01B11/00 , G01N21/211 , G01N21/4738 , G06F30/367 , G06N20/00 , G01B2210/56 , G06T2207/10024 , G06T2207/10152 , G06T2207/20081 , G06T2207/30148
Abstract: A method of predicting virtual metrology data for a wafer lot that includes receiving first image data from an imager system, the first image data relating to at least one first wafer lot, receiving measured metrology data from metrology equipment relating to the at least one first wafer lot, applying one or more machine learning techniques to the first image data and the measured metrology data to generate at least one predictive model for predicting at least one of virtual metrology data or virtual cell metrics data of wafer lots, and utilizing the at least one generated predictive model to generate at least one of first virtual metrology data or first virtual cell metrics data for the first wafer lot.
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公开(公告)号：US10403359B2
公开(公告)日：2019-09-03
申请号：US15918662
申请日：2018-03-12
Applicant: Micron Technology, Inc.
Inventor： Amitava Majumdar , Rajesh Kamana , Hongmei Wang , Shawn D. Lyonsmith , Ervin T. Hill , Zengtao T. Liu , Marlon W. Hug
Abstract: Methods, systems, and devices for non-contact electron beam probing techniques, including at one or more intermediate stages of fabrication, are described. One subset of first access lines may be grounded and coupled with one or more memory cells. A second subset of first access lines may be floating and coupled with one or more memory cells. A second access line may correspond to each first access line and may be configured to be coupled with the corresponding first access line, by way of one or more corresponding memory cells, when scanned with an electron beam. A leakage path may be determined by comparing an optical pattern generated in part by determining a brightness of each scanned access line and comparing the generated optical pattern with a second optical pattern.
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公开(公告)号：US20190189237A1
公开(公告)日：2019-06-20
申请号：US15849262
申请日：2017-12-20
Applicant: Micron Technology, Inc.
Inventor： Amitava Majumdar , Rajesh Kamana , Hongmei Wang , Shawn D. Lyonsmith , Ervin T. Hill , Zengtao T. Liu , Marlon W. Hug
CPC classification number: G11C29/50004 , G11C13/0004 , G11C13/0026 , G11C13/0028 , G11C13/0069 , G11C29/50008 , G11C29/56 , G11C29/56008 , G11C29/56016 , G11C2013/0078 , G11C2029/0403 , G11C2029/5004 , G11C2029/5602 , G11C2213/71 , G11C2213/72 , H01L22/14 , H01L27/2427 , H01L27/2463 , H01L45/06 , H01L45/144 , H01L45/1608
Abstract: Methods, systems, and devices for non-contact measurement of memory cell threshold voltage, including at one or more intermediate stages of fabrication, are described. One access line may be grounded and coupled with one or more memory cells. Each of the one or more memory cells may be coupled with a corresponding floating access line. A floating access line may be scanned with an electron beam configured to set the floating access line to a particular surface voltage at the scanned bit line, and the threshold voltage of the corresponding memory cell may be determined based on whether setting the scanned bit line to the surface voltage causes a detectable amount current to flow through the corresponding memory cell.
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