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    SEMICONDUCTOR DEVICES COMPRISING MAGNETIC MEMORY CELLS AND METHODS OF FABRICATION
    13.
    发明申请
    SEMICONDUCTOR DEVICES COMPRISING MAGNETIC MEMORY CELLS AND METHODS OF FABRICATION 有权
    包含磁记忆体的半导体器件和制造方法

    公开(公告)号：US20170033155A1

    公开(公告)日：2017-02-02

    申请号：US15289610

    申请日：2016-10-10

    Applicant: Micron Technology, Inc.

    Inventor： Witold Kula ,  Wayne I. Kinney ,  Gurtej S. Sandhu

    IPC: H01L27/22 ,  H01L43/12 ,  G11C11/16 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

    CPC classification number: H01L27/222 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetic cell core includes a seed region with a plurality of magnetic regions and a plurality of nonmagnetic regions thereover. The seed region provides a template that enables formation of an overlying nonmagnetic region with a microstructure that enables formation of an overlying free region with a desired crystal structure. The free region is disposed between two nonmagnetic regions, which may both be configured to induce surface/interface magnetic anisotropy. The structure is therefore configured to have a high magnetic anisotropy strength, a high energy barrier ratio, high tunnel magnetoresistance, a low programming current, low cell-to-cell electrical resistance variation, and low cell-to-cell variation in magnetic properties. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.

    Abstract translation: 磁性电池芯包括具有多个磁性区域的种子区域和其上的多个非磁性区域。 种子区域提供了能够形成具有能够形成具有期望的晶体结构的上覆自由区域的微结构的上覆非磁性区域的模板。 自由区域设置在两个非磁性区域之间，这两个非磁性区域都可以被配置成诱导表面/界面磁各向异性。 因此，该结构被配置为具有高的磁各向异性强度，高能势垒，高隧道磁阻，低编程电流，低电池到电池的电阻变化，以及磁特性中的低电池到电池的变化。 还公开了制造方法，存储器阵列，存储器系统和电子系统。

    SEMICONDUCTOR DEVICES COMPRISING MAGNETIC MEMORY CELLS
    14.
    发明申请
    SEMICONDUCTOR DEVICES COMPRISING MAGNETIC MEMORY CELLS 有权
    包含磁记忆体的半导体器件

    公开(公告)号：US20160276405A1

    公开(公告)日：2016-09-22

    申请号：US15168054

    申请日：2016-05-29

    Applicant: Micron Technology, Inc.

    Inventor： Wayne I. Kinney ,  Witold Kula ,  Stephen J. Kramer

    IPC: H01L27/22 ,  G11C11/16 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

    CPC classification number: H01L27/222 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3218 ,  H01F10/329 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random access memory (STT-MRAM) systems, and methods of fabrication.

    Abstract translation: 公开了存储单元。 存储单元内的磁性区域包括磁性子区域和耦合器子区域的交替结构。 耦合器子区域的耦合器材料反铁磁耦合相邻磁性子区域并且影响或促进相邻磁性子区域呈现的垂直磁性取向。 通过耦合器子区彼此间隔开的相邻的磁性子区域表现出相反方向的磁取向。 磁性和耦合器子区域可以各自具有被调整以在紧凑结构中形成磁性区域的厚度。 可以减少或消除在切换存储单元中的自由区域时从磁性区域发射的磁偶极子场之间的干扰。 还公开了半导体器件结构，自旋扭矩传递磁随机存取存储器（STT-MRAM）系统和制造方法。

    DEVICES COMPRISING CRYSTALLINE MATERIALS
    15.
    发明申请
    DEVICES COMPRISING CRYSTALLINE MATERIALS 有权

    公开(公告)号：US20230074063A1

    公开(公告)日：2023-03-09

    申请号：US18050772

    申请日：2022-10-28

    Applicant: Micron Technology, Inc.

    Inventor： Michael Mutch ,  Manuj Nahar ,  Wayne I. Kinney

    IPC: H01L29/04 ,  H01L21/02 ,  H01L29/161 ,  H01L21/324

    Abstract: A method includes forming a semiconductor structure. The structure includes a first material, a blocking material, a second material in an amorphous form, and a third material in an amorphous form. The blocking material is disposed between the first material and the second material. At least the second material and the third material each comprise silicon and/or germanium. The structure is exposed to a temperature above a crystallization temperature of the third material and below a crystallization temperature of the second material. Semiconductor structures, memory devices, and systems are also disclosed.

    Magnetic structures, semiconductor structures, and semiconductor devices
    16.
    发明授权
    Magnetic structures, semiconductor structures, and semiconductor devices 有权

    公开(公告)号：US11158670B2

    公开(公告)日：2021-10-26

    申请号：US16796677

    申请日：2020-02-20

    Applicant: Micron Technology, Inc.

    Inventor： Wayne I. Kinney ,  Witold Kula ,  Stephen J. Kramer

    IPC: H01L27/22 ,  G11C11/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10

    Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random-access memory (STT-MRAM) systems, and methods of fabrication.

    DEVICES COMPRISING CRYSTALLINE MATERIALS AND RELATED SYSTEMS
    18.
    发明申请
    DEVICES COMPRISING CRYSTALLINE MATERIALS AND RELATED SYSTEMS 审中-公开

    公开(公告)号：US20200303493A1

    公开(公告)日：2020-09-24

    申请号：US16898029

    申请日：2020-06-10

    Applicant: Micron Technology, Inc.

    Inventor： Michael Mutch ,  Manuj Nahar ,  Wayne I. Kinney

    IPC: H01L29/04 ,  H01L21/02 ,  H01L29/161 ,  H01L21/324

    Abstract: A method includes forming a semiconductor structure. The structure includes a first material, a blocking material, a second material in an amorphous form, and a third material in an amorphous form. The blocking material is disposed between the first material and the second material. At least the second material and the third material each comprise silicon and/or germanium. The structure is exposed to a temperature above a crystallization temperature of the third material and below a crystallization temperature of the second material. Semiconductor structures, memory devices, and systems are also disclosed.

    Magnetic structures, semiconductor structures, and semiconductor devices
    19.
    发明授权
    Magnetic structures, semiconductor structures, and semiconductor devices 有权

    公开(公告)号：US10586830B2

    公开(公告)日：2020-03-10

    申请号：US16112125

    申请日：2018-08-24

    Applicant: Micron Technology, Inc.

    Inventor： Wayne I. Kinney ,  Witold Kula ,  Stephen J. Kramer

    IPC: H01L27/22 ,  G11C11/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10

    Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random-access memory (STT-MRAM) systems, and methods of fabrication.

    Integrated Assemblies Comprising Ferroelectric Transistors and Non-Ferroelectric Transistors
    20.
    发明申请
    Integrated Assemblies Comprising Ferroelectric Transistors and Non-Ferroelectric Transistors 审中-公开

    公开(公告)号：US20200035704A1

    公开(公告)日：2020-01-30

    申请号：US16046803

    申请日：2018-07-26

    Applicant: Micron Technology, Inc.

    Inventor： Wayne I. Kinney

    IPC: H01L27/11597 ,  H01L27/11592 ,  H01L23/528 ,  H01L27/1159 ,  H01L29/08 ,  H01L29/78 ,  H01L29/10 ,  G11C11/22

    Abstract: Some embodiments include an integrated assembly having a semiconductor structure extending from a first wiring to a second wiring. A ferroelectric transistor includes a first transistor gate adjacent a first region of the semiconductor structure. A first non-ferroelectric transistor includes a second transistor gate adjacent a second region of the semiconductor structure. The second region of the semiconductor structure is between the first region of the semiconductor structure and the first wiring. A second non-ferroelectric transistor includes a third transistor gate adjacent a third region of the semiconductor structure. The third region of the semiconductor structure is between the first region of the semiconductor structure and the second wiring.

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