DISPLAY DEVICE WITH OPTICAL SENSORS
    11.
    发明申请
    DISPLAY DEVICE WITH OPTICAL SENSORS 有权
    带光学传感器的显示设备

    公开(公告)号:US20090289915A1

    公开(公告)日:2009-11-26

    申请号:US12469132

    申请日:2009-05-20

    IPC分类号: G06F3/041 G09G5/00

    摘要: A display device with a touch screen includes: first sensing units, each first sensing unit comprising first optical sensors connected in series, each first sensing unit comprising a first terminal for receiving a first voltage, each first sensing unit extending in a first direction; second sensing units, each second sensing unit comprising second optical sensors connected in series, each second sensing unit comprising a first terminal for receiving a second voltage, each second sensing unit extending in a second direction transverse to the first direction; a reset unit for applying a reset voltage to a second terminal of each of the first and second sensing units; and a read-out unit for sensing a touch position based on voltage changes at the second terminals of the first and second sensing units.

    摘要翻译: 具有触摸屏的显示装置包括:第一感测单元,每个第一感测单元包括串联连接的第一光学传感器,每个第一感测单元包括用于接收第一电压的第一端子,每个第一感测单元沿第一方向延伸; 第二感测单元,每个第二感测单元包括串联连接的第二光学传感器,每个第二感测单元包括用于接收第二电压的第一端子,每个第二感测单元沿横向于第一方向的第二方向延伸; 复位单元,用于将复位电压施加到第一和第二感测单元中的每一个的第二端子; 以及读出单元,用于基于第一和第二感测单元的第二端子处的电压变化来感测触摸位置。

    Display device and method for driving the same
    12.
    发明授权
    Display device and method for driving the same 有权
    显示装置及其驱动方法

    公开(公告)号:US07570236B2

    公开(公告)日:2009-08-04

    申请号:US11560562

    申请日:2006-11-16

    IPC分类号: G09G3/32

    摘要: A display device for compensating for degradation of a threshold voltage of a driving thin-film transistor (“TFT”) and method for driving the display device includes a light-emitting element, wherein the light-emitting element emits light by a driving current applied thereto, a driving TFT controlling the magnitude of the driving current directed to the light-emitting element, a capacitor which charges a voltage which varies depending on a data voltage and a threshold voltage of the driving TFT and maintains a voltage corresponding to a difference between the data voltage and a gate voltage of the driving TFT, a first switching unit supplying the data voltage to the capacitor in response to a scan signal, and a second switching unit which is diode-connected and supplies the driving TFT with a light emitting signal.

    摘要翻译: 用于补偿驱动薄膜晶体管(“TFT”)的阈值电压劣化的显示装置和驱动显示装置的方法包括发光元件,其中发光元件通过施加的驱动电流发光 控制针对发光元件的驱动电流的大小的驱动TFT,对根据数据电压和驱动TFT的阈值电压而变化的电压进行充电的电容器,并保持对应于 驱动TFT的数据电压和栅极电压,响应于扫描信号将数据电压提供给电容器的第一开关单元和二极管连接的第二开关单元,并向驱动TFT提供发光信号 。

    Display device and driving method thereof
    13.
    发明授权
    Display device and driving method thereof 有权
    显示装置及其驱动方法

    公开(公告)号:US07710366B2

    公开(公告)日:2010-05-04

    申请号:US11133878

    申请日:2005-05-19

    IPC分类号: G09G3/32

    摘要: Each pixel includes: a light emitting element; a capacitor; a driving transistor that has a control terminal, an input terminal, and an output terminal and supplies a driving current to the light emitting element to emit light; a first switching unit that diode-connects the driving transistor and supplies a data voltage to the driving transistor in response to a scanning signal; and a second switching unit that supplies a driving voltage to the driving transistor and connects the light emitting element and the capacitor to the driving transistor in response to an emission signal, wherein the capacitor is connected to the driving transistor through the first switching unit, stores a control voltage being a function of the data voltage and the threshold voltage of the driving transistor, and is connected to the driving transistor through the second switching unit to supply the control voltage to the driving transistor.

    摘要翻译: 每个像素包括:发光元件; 电容器 驱动晶体管,其具有控制端子,输入端子和输出端子,并且向发光元件提供驱动电流以发光; 第二开关单元,二极管连接驱动晶体管,并响应于扫描信号将数据电压提供给驱动晶体管; 以及第二开关单元,其向所述驱动晶体管提供驱动电压,并且响应于发射信号将所述发光元件和所述电容器连接到所述驱动晶体管,其中所述电容器通过所述第一开关单元连接到所述驱动晶体管, 控制电压是驱动晶体管的数据电压和阈值电压的函数,并且通过第二开关单元连接到驱动晶体管,以向驱动晶体管提供控制电压。

    Display device and driving method thereof

    公开(公告)号:US20060103324A1

    公开(公告)日:2006-05-18

    申请号:US11274913

    申请日:2005-11-14

    IPC分类号: G09G3/10

    摘要: A display device has a plurality of pixels, where each pixel includes a light emitting element, a capacitor, a driving transistor having a control terminal, an input terminal, and an output terminal and supplying a driving current to the light emitting element to emit light, a first switching unit diode-connecting the driving transistor and supplying a data voltage to the capacitor in response to a scanning signal, and a second switching unit supplying a driving voltage to the driving transistor and connecting the capacitor to the driving transistor in response to the emission signal, wherein the capacitor is connected to the driving transistor through the first switching unit, stores a control voltage depending on the data voltage and the threshold voltage of the driving transistor, and is connected to the driving transistor through the second switching unit to supply the control voltage to the driving transistor.

    Touch sensor using capacitance detection and liquid crystal display having the same
    15.
    发明授权
    Touch sensor using capacitance detection and liquid crystal display having the same 有权
    使用电容检测的触摸传感器和具有相同的液晶显示器

    公开(公告)号:US08427436B2

    公开(公告)日:2013-04-23

    申请号:US12327378

    申请日:2008-12-03

    IPC分类号: G06F3/041

    CPC分类号: G06F3/0412 G06F3/044

    摘要: A touch sensor configured to be disposed in a liquid crystal display panel includes a plurality of x-axis read-out lines crossing and insulated from a plurality of y-axis read-out lines and a plurality of sensor units. Each sensor unit includes a reset unit, a capacitance detector, a first output unit, and a second output unit. The reset unit outputs a first reset signal based on a first control signal. The capacitance detector changes the first reset signal based on a variation of a cell gap of the liquid crystal display panel caused by a touch event. The first output unit changes an electric potential of a corresponding x-axis read-out line in response to the first reset signal changed in the capacitance detector. The second output unit changes an electric potential of a corresponding y-axis read-out line in response to the first reset signal changed in the capacitance detector.

    摘要翻译: 配置为设置在液晶显示面板中的触摸传感器包括与多个y轴读出线和多个传感器单元交叉并绝缘的多个x轴读出线。 每个传感器单元包括复位单元,电容检测器,第一输出单元和第二输出单元。 复位单元基于第一控制信号输出第一复位信号。 电容检测器基于由触摸事件引起的液晶显示面板的单元间隙的变化而改变第一复位信号。 响应于在电容检测器中改变的第一复位信号,第一输出单元改变对应的x轴读出线的电位。 响应于在电容检测器中改变的第一复位信号,第二输出单元改变对应的y轴读出线的电位。

    Pixel structure using voltage programming-type for active matrix organic light emitting device
    16.
    发明授权
    Pixel structure using voltage programming-type for active matrix organic light emitting device 有权
    使用有源矩阵有机发光器件的电压编程类型的像素结构

    公开(公告)号:US07872620B2

    公开(公告)日:2011-01-18

    申请号:US11412525

    申请日:2006-04-27

    IPC分类号: G09G3/32

    摘要: A pixel structure using a voltage programming type active matrix organic light emitting diode (OLED) which can minimize a current deterioration phenomenon. The pixel structure includes a fifth TFT receiving an external management signal EMS through its gate, having a drain region connected to a cathode part of an OLED, and receiving an input of an OLED current through its source-drain current path when the OLED emits light, a fourth TFT receiving a set scan signal SCAN through its gate and having source and drain regions connected to gate and drain parts of a third TFT T3; respectively, the third TFT T3 being a current driving transistor for determining the OLED current when the OLED emits light, a capacitor C having upper and lower plates connected to the gate part of the third TFT T3 and a ground voltage VSS.

    摘要翻译: 使用电压编程型有源矩阵有机发光二极管(OLED)的像素结构,其可以使电流恶化现象最小化。 像素结构包括通过其栅极接收外部管理信号EMS的第五TFT,具有连接到OLED的阴极部分的漏极区域,并且当OLED发光时,通过其源极 - 漏极电流路径接收OLED电流的输入 通过其栅极接收设置的扫描信号SCAN并具有连接到第三TFT T3的栅极和漏极部分的源极和漏极区域的第四TFT; 第三TFT T3是用于在OLED发光时确定OLED电流的电流驱动晶体管,具有连接到第三TFT T3的栅极部分的上板和下板的电容器C和接地电压VSS。

    Illumination sensing apparatus, driving method thereof and display device having the illumination sensing apparatus
    17.
    发明授权
    Illumination sensing apparatus, driving method thereof and display device having the illumination sensing apparatus 有权
    照明感测装置及其驱动方法以及具有照明感测装置的显示装置

    公开(公告)号:US07868280B2

    公开(公告)日:2011-01-11

    申请号:US12179360

    申请日:2008-07-24

    IPC分类号: G01J1/32 G02F1/1335

    摘要: Provided are an illumination sensing apparatus, a driving method thereof and a display device having the illumination sensing apparatus. The illumination sensing apparatus includes an illumination sensor unit configured to generate a sensing signal according to peripheral illumination, an illumination determination unit configured to generate an illumination signal according to the sensing signal, and an illumination judgment unit configured to output a brightness select signal using the illumination signal, wherein the illumination sensor unit controls sensitivity of sensing the peripheral illumination to be varied according to the brightness select signal. Therefore, the sensitivity of an illumination sensor is automatically controlled according to the peripheral illumination, thus improving peripheral illumination sensibility. Further, an illumination signal corresponding to the peripheral illumination is provided to a light source module to thereby control the output brightness of the light source module, which makes it possible to reduce power consumption and improve image quality.

    摘要翻译: 提供了一种照明感测装置,其驱动方法和具有该照明感测装置的显示装置。 该照明感测装置具备:照明传感器单元,被配置为根据周边照明产生感测信号;照明判定​​单元,其根据感测信号生成照明信号;照明判断单元,其使用 照明信号,其中所述照明传感器单元控制根据所述亮度选择信号来感测要周边照明的灵敏度。 因此,根据周边照明自动控制照明传感器的灵敏度,从而提高周边照明灵敏度。 此外,将与周边照明相对应的照明信号提供给光源模块,从而控制光源模块的输出亮度,这使得可以降低功耗并提高图像质量。

    Thin film transistor and fabrication method thereof
    18.
    发明授权
    Thin film transistor and fabrication method thereof 有权
    薄膜晶体管及其制造方法

    公开(公告)号:US06455874B1

    公开(公告)日:2002-09-24

    申请号:US09893655

    申请日:2001-06-29

    IPC分类号: H01L2904

    摘要: The present invention discloses a thin film transistor (TFT) and fabrication method thereof for a liquid crystal display device. The thin film transistor includes a substrate; a buffer layer on the substrate; an amorphous silicon layer having a pure amorphous silicon area and doped amorphous silicon areas, the pure amorphous silicon area having vertical offsets in both sides thereof, the doped amorphous silicon areas having source and drain areas, the doped amorphous silicon areas being doped by a dopant, the source and drain areas positioned on both sides of the pure amorphous silicon area and etched to expose the vertical offsets; an oxidized layer on the pure amorphous silicon area; a polycrystalline silicon layer on the oxidized layer; a gate insulating layer on the polycrystalline silicon layer; a gate electrode on the gate insulating layer; an inter layer insulator having first and second contact holes, the inter layer insulator covering the amorphous silicon layer, the oxidized layer, the polycrystalline silicon layer, the gate insulating layer, and the gate electrode; and source and drain electrodes contacting the source areas through the first contact hole and the drain area through the second contact hole, respectively.

    摘要翻译: 本发明公开了一种用于液晶显示装置的薄膜晶体管(TFT)及其制造方法。 薄膜晶体管包括基板; 衬底上的缓冲层; 具有纯非晶硅区域和掺杂的非晶硅区域的非晶硅层,纯非晶硅区域在其两侧具有垂直偏移,掺杂的非晶硅区域具有源极和漏极区域,掺杂的非晶硅区域被掺杂剂掺杂 源极和漏极区域位于纯非晶硅区域的两侧,并被蚀刻以暴露垂直偏移; 在纯非晶硅区域上的氧化层; 氧化层上的多晶硅层; 多晶硅层上的栅极绝缘层; 栅绝缘层上的栅电极; 具有第一和第二接触孔的层间绝缘体,覆盖非晶硅层,氧化层,多晶硅层,栅极绝缘层和栅电极的层间绝缘体; 以及源极和漏极电极分别通过第一接触孔和漏极区域通过第二接触孔接触源极区域。

    Methods of forming nonmonocrystalline silicon-on-insulator thin-film
transistors
    19.
    发明授权
    Methods of forming nonmonocrystalline silicon-on-insulator thin-film transistors 失效
    形成非晶硅绝缘体上薄膜晶体管的方法

    公开(公告)号:US5840602A

    公开(公告)日:1998-11-24

    申请号:US686242

    申请日:1996-07-25

    CPC分类号: H01L27/1214

    摘要: Methods of forming thin-film transistors include the steps of forming an amorphous silicon (a-Si) layer of predetermined conductivity type on a face of an electrically insulating substrate and then forming a first insulating layer on the amorphous silicon layer. The first insulating layer and amorphous silicon layer are then patterned to define spaced amorphous source and drain regions having exposed sidewalls. An amorphous silicon channel region is then deposited in the space between the source and drain regions and in contact with the sidewalls thereof. An annealing step is then performed to convert the amorphous source, drain and channel regions to polycrystalline silicon, prior to the step of forming an insulated gate electrode on the channel region.

    摘要翻译: 形成薄膜晶体管的方法包括以下步骤:在电绝缘基板的表面上形成预定导电类型的非晶硅(a-Si)层,然后在非晶硅层上形成第一绝缘层。 然后对第一绝缘层和非晶硅层进行构图以限定具有暴露的侧壁的间隔开的无定形源极和漏极区域。 然后在源区和漏区之间的空间中沉积非晶硅沟道区,并与其侧壁接触。 然后在通道区域上形成绝缘栅电极的步骤之前,执行退火步骤以将非晶硅源,漏极和沟道区域转换为多晶硅。

    Polysilicon thin-film transistor and method for fabricating the same
    20.
    发明授权
    Polysilicon thin-film transistor and method for fabricating the same 失效
    多晶硅薄膜晶体管及其制造方法

    公开(公告)号:US5804837A

    公开(公告)日:1998-09-08

    申请号:US687630

    申请日:1996-07-26

    摘要: To accomplish the objects of the present invention, among others, the present invention provides a thin-film transistor that has a channel region operatively having an offset region only during turn-off. Source and drain regions self-aligned with different ends of the channel region. A gate region is formed on a gate insulating layer disposed over the channel region and has a main gate accepting a gate voltage, a subgate which comes into ohmic contact with the source region, and a junction gate for forming a rectifying junction between the main gate and subgate.

    摘要翻译: 为了实现本发明的目的,除其他之外,本发明提供一种薄膜晶体管,其具有仅在关断期间可操作地具有偏移区域的沟道区。 源极和漏极区域与通道区域的不同端部自对准。 栅极区域形成在栅极绝缘层上,栅极绝缘层设置在沟道区上方,并且具有接受栅极电压的主栅极,与源极区域欧姆接触的子栅极和用于在主栅极之间形成整流结的结栅极 和subgate。