摘要:
A display device with a touch screen includes: first sensing units, each first sensing unit comprising first optical sensors connected in series, each first sensing unit comprising a first terminal for receiving a first voltage, each first sensing unit extending in a first direction; second sensing units, each second sensing unit comprising second optical sensors connected in series, each second sensing unit comprising a first terminal for receiving a second voltage, each second sensing unit extending in a second direction transverse to the first direction; a reset unit for applying a reset voltage to a second terminal of each of the first and second sensing units; and a read-out unit for sensing a touch position based on voltage changes at the second terminals of the first and second sensing units.
摘要:
A display device for compensating for degradation of a threshold voltage of a driving thin-film transistor (“TFT”) and method for driving the display device includes a light-emitting element, wherein the light-emitting element emits light by a driving current applied thereto, a driving TFT controlling the magnitude of the driving current directed to the light-emitting element, a capacitor which charges a voltage which varies depending on a data voltage and a threshold voltage of the driving TFT and maintains a voltage corresponding to a difference between the data voltage and a gate voltage of the driving TFT, a first switching unit supplying the data voltage to the capacitor in response to a scan signal, and a second switching unit which is diode-connected and supplies the driving TFT with a light emitting signal.
摘要:
Each pixel includes: a light emitting element; a capacitor; a driving transistor that has a control terminal, an input terminal, and an output terminal and supplies a driving current to the light emitting element to emit light; a first switching unit that diode-connects the driving transistor and supplies a data voltage to the driving transistor in response to a scanning signal; and a second switching unit that supplies a driving voltage to the driving transistor and connects the light emitting element and the capacitor to the driving transistor in response to an emission signal, wherein the capacitor is connected to the driving transistor through the first switching unit, stores a control voltage being a function of the data voltage and the threshold voltage of the driving transistor, and is connected to the driving transistor through the second switching unit to supply the control voltage to the driving transistor.
摘要:
A display device has a plurality of pixels, where each pixel includes a light emitting element, a capacitor, a driving transistor having a control terminal, an input terminal, and an output terminal and supplying a driving current to the light emitting element to emit light, a first switching unit diode-connecting the driving transistor and supplying a data voltage to the capacitor in response to a scanning signal, and a second switching unit supplying a driving voltage to the driving transistor and connecting the capacitor to the driving transistor in response to the emission signal, wherein the capacitor is connected to the driving transistor through the first switching unit, stores a control voltage depending on the data voltage and the threshold voltage of the driving transistor, and is connected to the driving transistor through the second switching unit to supply the control voltage to the driving transistor.
摘要:
A touch sensor configured to be disposed in a liquid crystal display panel includes a plurality of x-axis read-out lines crossing and insulated from a plurality of y-axis read-out lines and a plurality of sensor units. Each sensor unit includes a reset unit, a capacitance detector, a first output unit, and a second output unit. The reset unit outputs a first reset signal based on a first control signal. The capacitance detector changes the first reset signal based on a variation of a cell gap of the liquid crystal display panel caused by a touch event. The first output unit changes an electric potential of a corresponding x-axis read-out line in response to the first reset signal changed in the capacitance detector. The second output unit changes an electric potential of a corresponding y-axis read-out line in response to the first reset signal changed in the capacitance detector.
摘要:
A pixel structure using a voltage programming type active matrix organic light emitting diode (OLED) which can minimize a current deterioration phenomenon. The pixel structure includes a fifth TFT receiving an external management signal EMS through its gate, having a drain region connected to a cathode part of an OLED, and receiving an input of an OLED current through its source-drain current path when the OLED emits light, a fourth TFT receiving a set scan signal SCAN through its gate and having source and drain regions connected to gate and drain parts of a third TFT T3; respectively, the third TFT T3 being a current driving transistor for determining the OLED current when the OLED emits light, a capacitor C having upper and lower plates connected to the gate part of the third TFT T3 and a ground voltage VSS.
摘要:
Provided are an illumination sensing apparatus, a driving method thereof and a display device having the illumination sensing apparatus. The illumination sensing apparatus includes an illumination sensor unit configured to generate a sensing signal according to peripheral illumination, an illumination determination unit configured to generate an illumination signal according to the sensing signal, and an illumination judgment unit configured to output a brightness select signal using the illumination signal, wherein the illumination sensor unit controls sensitivity of sensing the peripheral illumination to be varied according to the brightness select signal. Therefore, the sensitivity of an illumination sensor is automatically controlled according to the peripheral illumination, thus improving peripheral illumination sensibility. Further, an illumination signal corresponding to the peripheral illumination is provided to a light source module to thereby control the output brightness of the light source module, which makes it possible to reduce power consumption and improve image quality.
摘要:
The present invention discloses a thin film transistor (TFT) and fabrication method thereof for a liquid crystal display device. The thin film transistor includes a substrate; a buffer layer on the substrate; an amorphous silicon layer having a pure amorphous silicon area and doped amorphous silicon areas, the pure amorphous silicon area having vertical offsets in both sides thereof, the doped amorphous silicon areas having source and drain areas, the doped amorphous silicon areas being doped by a dopant, the source and drain areas positioned on both sides of the pure amorphous silicon area and etched to expose the vertical offsets; an oxidized layer on the pure amorphous silicon area; a polycrystalline silicon layer on the oxidized layer; a gate insulating layer on the polycrystalline silicon layer; a gate electrode on the gate insulating layer; an inter layer insulator having first and second contact holes, the inter layer insulator covering the amorphous silicon layer, the oxidized layer, the polycrystalline silicon layer, the gate insulating layer, and the gate electrode; and source and drain electrodes contacting the source areas through the first contact hole and the drain area through the second contact hole, respectively.
摘要:
Methods of forming thin-film transistors include the steps of forming an amorphous silicon (a-Si) layer of predetermined conductivity type on a face of an electrically insulating substrate and then forming a first insulating layer on the amorphous silicon layer. The first insulating layer and amorphous silicon layer are then patterned to define spaced amorphous source and drain regions having exposed sidewalls. An amorphous silicon channel region is then deposited in the space between the source and drain regions and in contact with the sidewalls thereof. An annealing step is then performed to convert the amorphous source, drain and channel regions to polycrystalline silicon, prior to the step of forming an insulated gate electrode on the channel region.
摘要:
To accomplish the objects of the present invention, among others, the present invention provides a thin-film transistor that has a channel region operatively having an offset region only during turn-off. Source and drain regions self-aligned with different ends of the channel region. A gate region is formed on a gate insulating layer disposed over the channel region and has a main gate accepting a gate voltage, a subgate which comes into ohmic contact with the source region, and a junction gate for forming a rectifying junction between the main gate and subgate.