公开(公告)号：US20090085147A1

公开(公告)日：2009-04-02

申请号：US12031895

申请日：2008-02-15

申请人： Takeshi Ishiguro ,  Kenji Sugiura ,  Hugh J. Griffin

发明人： Takeshi Ishiguro ,  Kenji Sugiura ,  Hugh J. Griffin

IPC分类号： H01L21/76 ,  H01L27/00

CPC分类号： H01L29/0634

摘要： A method of manufacturing a superjunction device includes providing a semiconductor wafer having at least one die. At least one first trench having a first orientation is formed in the at least one die. At least one second trench having a second orientation that is different from the first orientation is formed in the at least one die.

摘要翻译： 制造超结装置的方法包括提供具有至少一个管芯的半导体晶片。 在至少一个管芯中形成具有第一取向的至少一个第一沟槽。 在至少一个管芯中形成具有不同于第一取向的第二取向的至少一个第二沟槽。

公开(公告)号：US20080272429A1

公开(公告)日：2008-11-06

申请号：US11962530

申请日：2007-12-21

申请人： Takeshi Ishiguro

发明人： Takeshi Ishiguro

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7802 ,  H01L21/26586 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7813 ,  H01L29/861

摘要： Superjunction semiconductor devices having narrow surface layout of terminal structures and methods of manufacturing the devices are provided. The narrow surface layout of terminal structures is achieved, in part, by connecting a source electrode to a body contact region within a semiconductor substrate at a body contact interface comprising at least a first side of the body contact region other than a portion of a first main surface of the semiconductor substrate.

摘要翻译： 提供具有端子结构的窄表面布局的超结半导体器件和制造器件的方法。 端子结构的窄表面布局部分地通过在源体接触界面处将源电极连接到半导体衬底内的体接触区域而实现，所述体接触界面包括至少第一侧的身体接触区域，而不是第一 半导体衬底的主表面。

公开(公告)号：US5376237A

公开(公告)日：1994-12-27

申请号：US979401

申请日：1992-11-19

申请人： Takeshi Ishiguro ,  Toshifumi Nishikubo ,  Ippei Shimizu

发明人： Takeshi Ishiguro ,  Toshifumi Nishikubo ,  Ippei Shimizu

IPC分类号： D21H11/08 ,  D21H19/38 ,  D21H21/52

CPC分类号： D21H19/38 ,  D21H11/08 ,  D21H21/52

摘要： Multicolor printing on a high speed web-fed press with cold-set ink increases production efficiency over that of a press with dryers. For this purpose, newsprint is used because of its good oil absorptiveness, however, the printing quality is not satisfactory. A coating including needle form pigments, the average oil absorptiveness of which is more than 65 cc/100 g, was applied on the base paper, and coated paper for the high speed press was produced. The present invention increases the reproducibility of dots and sharpness of print patterns compared comparing to usual newsprint without decreasing the handling efficiencies

摘要翻译： 在具有冷定型油墨的高速卷筒纸压榨机上进行多色印刷可提高生产效率，而不仅限于具有烘干机的压榨机。 为此，由于其良好的吸油性，因此使用新闻纸，但印刷质量不理想。 在原纸上涂布包括其平均吸油性大于65cc / 100g的针状颜料的涂层，并制备用于高速压机的涂布纸。 与通常的新闻纸相比，本发明增加了点的重现性和印刷图案的清晰度，而不降低处理效率

公开(公告)号：US3934139A

公开(公告)日：1976-01-20

申请号：US398683

申请日：1973-09-19

申请人： Shuichi Ohata ,  Yoji Takeuchi ,  Takeshi Ishiguro

发明人： Shuichi Ohata ,  Yoji Takeuchi ,  Takeshi Ishiguro

IPC分类号： G01N33/22 ,  G01N23/08 ,  G01N23/00

CPC分类号： G01N23/083

摘要： An apparatus for continuously measuring with safety and high accuracy the calorific power of a sample containing hydrocarbon compounds and sulfur, such as crude oil and petroleum products. The apparatus supplies two energy levels of radioactive rays to be absorbed by the sample, a first supply of the radioactive rays having an energy level at which the mass absorption coefficient of carbon differs from that of hydrogen, and a second supply of rays having an energy level at which the mass absorption coefficient of carbon is approximately equal to that of hydrogen. The first rays yield a signal varying with the concentrations of hydrogen, carbon and sulfur in the sample, while the second rays yield a signal varying with the concentration of sulfur in the sample. The signals are density compensated, and mathematically correlated according to a predetermined arithmetic formula to determine the calorific power of the sample hydrocarbon compound.

摘要翻译： 一种以安全，高精度连续测量包含烃化合物和硫的样品（如原油和石油产品）的发热量的装置。 该装置提供要被样品吸收的两种能量级的放射线，第一次放射线的供应具有碳的质量吸收系数与氢的质量吸收系数不同的能级，以及具有能量的第二次光线 碳的质量吸收系数近似等于氢的吸收系数。 第一根光线产生随着样品中氢，碳和硫浓度变化的信号，而第二根光线产生随着样品中硫浓度变化的信号。 信号是密度补偿的，并且根据预定的算术公式数学上相关，以确定样品烃化合物的发热量。

公开(公告)号：US09543380B2

公开(公告)日：2017-01-10

申请号：US13169378

申请日：2011-06-27

申请人： Takeshi Ishiguro ,  Kenji Sugiura ,  Hugh J. Griffin

发明人： Takeshi Ishiguro ,  Kenji Sugiura ,  Hugh J. Griffin

IPC分类号： H01L29/02 ,  H01L29/06

CPC分类号： H01L29/0634

摘要： A method of manufacturing a superjunction device includes providing a semiconductor wafer having at least one die. At least one first trench having a first orientation is formed in the at least one die. At least one second trench having a second orientation that is different from the first orientation is formed in the at least one die.

摘要翻译： 制造超结装置的方法包括提供具有至少一个管芯的半导体晶片。 在至少一个管芯中形成具有第一取向的至少一个第一沟槽。 在至少一个管芯中形成具有不同于第一取向的第二取向的至少一个第二沟槽。

公开(公告)号：US08580651B2

公开(公告)日：2013-11-12

申请号：US11962523

申请日：2007-12-21

申请人： Takeshi Ishiguro

发明人： Takeshi Ishiguro

IPC分类号： H01L21/762

CPC分类号： H01L29/66712 ,  H01L21/26586 ,  H01L29/0634 ,  H01L29/0653

摘要： Methods for manufacturing trench type semiconductor devices involve refilling the trenches after high temperature processing steps are performed. The methods allow thermally unstable materials to be used as refill materials for the trenches of the device. Trench type semiconductor devices containing thermally unstable refill materials are also provided. In particular, methods of manufacturing and devices of a trench type semiconductor devices containing organic refill materials are provided.

摘要翻译： 用于制造沟槽型半导体器件的方法包括在执行高温处理步骤之后重新填充沟槽。 该方法允许热不稳定材料用作装置沟槽的补充材料。 还提供了包含热不稳定填充材料的沟槽型半导体器件。 特别地，提供了制造方法和包含有机填充材料的沟槽型半导体器件的器件。

公开(公告)号：US07723172B2

公开(公告)日：2010-05-25

申请号：US12029857

申请日：2008-02-12

申请人： Takeshi Ishiguro

发明人： Takeshi Ishiguro

IPC分类号： H01L21/8238

CPC分类号： H01L29/7802 ,  H01L21/26586 ,  H01L21/823487 ,  H01L27/0814 ,  H01L27/088 ,  H01L27/095 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/66712

摘要： Methods for manufacturing trench type semiconductor devices containing thermally unstable refill materials are provided. A disposable material is used to fill the trenches and is subsequently replaced by a thermally sensitive refill material after the high temperature processes are performed. Trench type semiconductor devices manufactured according to method embodiments are also provided.

摘要翻译： 提供了包含热不稳定的再填充材料的沟槽型半导体器件的制造方法。 使用一次性材料来填充沟槽，并且在进行高温处理之后随后被热敏补充材料置换。 还提供了根据方法实施例制造的沟槽型半导体器件。

公开(公告)号：US20090200547A1

公开(公告)日：2009-08-13

申请号：US12371021

申请日：2009-02-13

申请人： Hugh J. Griffin ,  Takeshi Ishiguro ,  Kenji Sugiura

发明人： Hugh J. Griffin ,  Takeshi Ishiguro ,  Kenji Sugiura

IPC分类号： H01L21/02 ,  H01L23/00

CPC分类号： H01L22/12 ,  B81B2203/033 ,  B81C1/00619 ,  B81C99/0065 ,  B81C2201/0138 ,  H01L21/3065 ,  H01L22/26 ,  H01L29/0634 ,  H01L2924/0002 ,  H01L2924/13091 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor wafer having at least one device trench extending to a first depth position includes providing a semiconductor substrate having first and second main surfaces and a semiconductor material layer having first and second main surfaces disposed on the first main surface of the semiconductor substrate and determining an etch ratio. The least one device trench and at least one monitor trench are simultaneously formed in the first main surface of the semiconductor material layer. The at least one monitor trench is monitored to detect when it extends to a second depth position. A ratio of the first depth position to the second depth position is generally equal to the etch ratio.

摘要翻译： 制造具有延伸到第一深度位置的至少一个器件沟槽的半导体晶片的方法包括提供具有第一和第二主表面的半导体衬底和具有设置在半导体的第一主表面上的第一和第二主表面的半导体材料层 衬底并确定蚀刻比。 在半导体材料层的第一主表面中同时形成至少一个器件沟槽和至少一个监测沟槽。 监视至少一个监视器沟槽以检测其何时延伸到第二深度位置。 第一深度位置与第二深度位置的比率通常等于蚀刻比。

公开(公告)号：US20120006750A1

公开(公告)日：2012-01-12

申请号：US13138672

申请日：2009-10-22

申请人： Kenichiro Miyazawa ,  Takeshi Ishiguro

发明人： Kenichiro Miyazawa ,  Takeshi Ishiguro

IPC分类号： B01D15/08

CPC分类号： G01N30/34 ,  B01D15/166 ,  B01D15/40 ,  G01N30/84

摘要： Provided is a method of manufacturing target substances with use of supercritical fluid chromatography, by which the following are achieved: solution of a problem at the time of sequential injections of samples containing the target substances; an increase of a treatment amount of separation per unit time; and improvement of efficiency in separation. The method includes the steps of: injecting the sample containing the target substances into a mobile phase; and returning composition of the mobile phase to a pre-change state after changing the composition of the mobile phase. The step of returning the composition of the mobile phase to the pre-change state after changing the composition of the mobile phase is performed during a period of time from detection of a peak of one of the target substances which is eluted latest from a column among the target substances separated by the supercritical fluid chromatography apparatus to injection of the next sample, whereby the problem is solved.

公开(公告)号：US20110254137A1

公开(公告)日：2011-10-20

申请号：US13169378

申请日：2011-06-27

申请人： Takeshi Ishiguro ,  Kenji Sugiura ,  Hugh J. Griffin

发明人： Takeshi Ishiguro ,  Kenji Sugiura ,  Hugh J. Griffin

IPC分类号： H01L29/02

CPC分类号： H01L29/0634

摘要： A method of manufacturing a superjunction device includes providing a semiconductor wafer having at least one die. At least one first trench having a first orientation is formed in the at least one die. At least one second trench having a second orientation that is different from the first orientation is formed in the at least one die.

摘要翻译： 制造超结装置的方法包括提供具有至少一个管芯的半导体晶片。 在至少一个管芯中形成具有第一取向的至少一个第一沟槽。 在至少一个管芯中形成具有不同于第一取向的第二取向的至少一个第二沟槽。