公开(公告)号：US20210006230A1

公开(公告)日：2021-01-07

申请号：US17023861

申请日：2020-09-17

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Ryota Kawai ,  Keisuke Takeyama ,  Yuichi Goto

IPC: H03H9/24 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10

Abstract: A resonance device includes a resonator, an upper lid, and a lower lid. The resonator includes a vibration portion, a frame, and holding arms. The vibration portion includes a base and a plurality of vibration arms. The lower lid has a protruding portion protruding between two adjacent vibration arms, the protruding portion has an insulating film, the vibration arms have a weight portion that has a conductive film formed on the insulating film, and in a direction in which the plurality of vibration arms extend, a first distance between the weight portion of any one of the two adjacent vibration arms and the holding portion is less than a second distance between the weight portion and the protruding portion.

公开(公告)号：US09584093B2

公开(公告)日：2017-02-28

申请号：US14933336

申请日：2015-11-05

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Toshio Nishimura ,  Takashi Hase ,  Keisuke Takeyama ,  Hiroaki Kaida ,  Keiichi Umeda ,  Takehiko Kishi ,  Hiroshi Yamada

IPC: H03H9/21

CPC classification number: H03H9/21

Abstract: A vibrating device having a number 2N (N is an integer equal to 2 or larger) of tuning fork arms extending in a first direction are arranged side by side in a second direction. Phases of flexural vibrations of the number N of tuning fork arms positioned at a first side of an imaginary line A, which passes a center of a region in the second direction where the number 2N of tuning fork arms are disposed and which extends in the first direction, are symmetric to phases of flexural vibrations of the number N of tuning fork arms positioned at a second side of the imaginary line opposite the first side.

Abstract translation: 具有沿第一方向延伸的音叉臂的数量为2N（N是等于2或更大的整数）的振动装置在第二方向上并排布置。 定位在假想线A的第一侧的音叉臂数量N的弯曲振动相位，该假想线A的第二方向的中心位于音叉臂的数目2N的第二方向上，并且在第一方向上延伸 方向，对称于位于与第一侧相对的假想线的第二侧的音叉臂数量N的弯曲振动的相位。

公开(公告)号：US10673402B2

公开(公告)日：2020-06-02

申请号：US16174563

申请日：2018-10-30

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yoshihisa Inoue ,  Toshio Nishimura ,  Keisuke Takeyama ,  Ryota Kawai ,  Yuichi Goto

IPC: H03H9/21 ,  H03H9/02 ,  B81B3/00 ,  H03H9/10 ,  H03H9/24 ,  H03H9/05 ,  H03H9/13 ,  H03H9/17 ,  H03H9/15

Abstract: A resonator that includes a base and one or more vibration arms with fixed ends connected to a front end of the base and open ends extending therefrom. Moreover, the vibration arms include first and second electrodes and a piezoelectric film that is disposed therebetween. The resonator further includes a protective film disposed opposing an upper face of the piezoelectric film and sandwiching the first electrode and a temperature characteristics adjusting film formed of a material different from a material of the protective film and that is provided on the fixed end side relative to the center of the vibration arms such that part of the protective film is exposed to a surface.

公开(公告)号：US10396752B2

公开(公告)日：2019-08-27

申请号：US15206585

申请日：2016-07-11

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Hiroaki Kaida ,  Eitaro Kameda ,  Keisuke Takeyama ,  Daisuke Nakamura

IPC: H03H9/02 ,  B81B3/00 ,  H03H9/24 ,  H03H9/15

Abstract: A MEMS device that suppresses variations in a resistance value caused by contracting vibrations in a direction in which a holding portion extends. The MEMS device includes a frame, a rectangular plate that receives an input of a driving signal, and holding portions that anchor the rectangular plate to the frame. The frame and the rectangular plate are both rectangular in shape. The holding portions are provided extending toward the frame from central areas of the opposing sides of the rectangular plate, and anchor the rectangular plate to the frame. A resistive film is formed in a region that follows a straight line connecting the holding portions that anchor the rectangular plate to the frame and that corresponds to no more than half a maximum displacement from a vibration distribution.

公开(公告)号：US20190074812A1

公开(公告)日：2019-03-07

申请号：US16174563

申请日：2018-10-30

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yoshihisa Inoue ,  Toshio Nishimura ,  Keisuke Takeyama ,  Ryota Kawai ,  Yuichi Goto

IPC: H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/13 ,  H03H9/17

Abstract: A resonator that includes a base and one or more vibration arms with fixed ends connected to a front end of the base and open ends extending therefrom. Moreover, the vibration arms include first and second electrodes and a piezoelectric film that is disposed therebetween. The resonator further includes a protective film disposed opposing an upper face of the piezoelectric film and sandwiching the first electrode and a temperature characteristics adjusting film formed of a material different from a material of the protective film and that is provided on the fixed end side relative to the center of the vibration arms such that part of the protective film is exposed to a surface.

公开(公告)号：US09866199B2

公开(公告)日：2018-01-09

申请号：US14937026

申请日：2015-11-10

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Toshio Nishimura ,  Takashi Hase ,  Keisuke Takeyama ,  Hiroaki Kaida ,  Keiichi Umeda ,  Takehiko Kishi ,  Hiroshi Yamada

IPC: H03H9/21 ,  H01L41/047

CPC classification number: H03H9/21 ,  H01L41/0478

Abstract: A vibrating device having tuning fork arms extending in a first direction that are joined to a base portion and are arranged side by side in an second direction. Each of the tuning fork arms has a structure that a silicon oxide layer is laminated on a Si layer made of a degenerate semiconductor, and that an excitation portion is provided on the silicon oxide layer. When a total thickness of the Si layer is denoted by T1, a total thickness of the silicon oxide layer is denoted by T2, and the temperature coefficient of resonant frequency (TCF) when the silicon oxide layer is not provided on the Si layer is denoted by x, a thickness ratio T2/(T1+T2) is within a range of (−0.0002x2−0.0136x+0.0014)±0.05.

公开(公告)号：US20160065173A1

公开(公告)日：2016-03-03

申请号：US14937026

申请日：2015-11-10

Applicant: Murata Manufacturing Co., Ltd.

Inventor： TOSHIO NISHIMURA ,  Takashi Hase ,  Keisuke Takeyama ,  Hiroaki Kaida ,  Keiichi Umeda ,  Takehiko Kishi ,  Hiroshi Yamada

IPC: H03H9/21 ,  H01L41/047

CPC classification number: H03H9/21 ,  H01L41/0478

Abstract: A vibrating device having tuning fork arms extending in a first direction that are joined to a base portion and are arranged side by side in an second direction. Each of the tuning fork arms has a structure that a silicon oxide layer is laminated on a Si layer made of a degenerate semiconductor, and that an excitation portion is provided on the silicon oxide layer. When a total thickness of the Si layer is denoted by T1, a total thickness of the silicon oxide layer is denoted by T2, and the temperature coefficient of resonant frequency (TCF) when the silicon oxide layer is not provided on the Si layer is denoted by x, a thickness ratio T2/(T1+T2) is within a range of (−0.0002x2−0.0136x+0.0014)±0.05.

Abstract translation: 一种振动装置，其具有沿第一方向延伸的音叉臂，所述音叉臂连接到基部并沿第二方向并排设置。 每个音叉臂具有在由简并半导体制成的Si层上层叠氧化硅层的结构，并且在氧化硅层上设置激发部。 当Si层的总厚度由T1表示时，氧化硅层的总厚度由T2表示，并且在Si层上未设置氧化硅层时的共振频率（TCF）的温度系数表示为 通过x，厚度比T2 /（T1 + T2）在（-0.0002x2-0.0136x + 0.0014）±0.05的范围内。

公开(公告)号：US20160064642A1

公开(公告)日：2016-03-03

申请号：US14939270

申请日：2015-11-12

Applicant: Murata Manufacturing Co., Ltd.

Inventor： TOSHIO NISHIMURA ,  Keiichi Umeda ,  Takashi Hase ,  Keisuke Takeyama ,  Takehiko Kishi ,  Hiroshi Yamada

IPC: H01L41/09 ,  H01L41/047 ,  H01L41/083

CPC classification number: H01L41/09 ,  H01L41/047 ,  H01L41/083 ,  H03H9/02448 ,  H03H9/0595 ,  H03H9/2452 ,  H03H2009/155

Abstract: A vibrating device that is in the form of a rectangular plate having opposed long sides and opposed short sides, and that utilizes an expanding and contracting vibration mode in a direction of the short sides. The vibrating device includes a Si layer made of a degenerate semiconductor, a silicon oxide layer, a piezoelectric layer, and first and second electrodes through which a voltage is applied to the piezoelectric layer. When a total thickness of the Si layer is denoted by T1, a total thickness of the silicon oxide layer is denoted by T2, and the TCF in the vibrating device when the silicon oxide layer 3 is not provided is denoted by x(ppm/K), T2/(T1+T2) is within a range of (−0.0003x2−0.0256x+0.0008)±0.05.

Abstract translation: 一种振动装置，其形式为矩形板，具有相对的长边和相对的短边，并且在短边方向上使用伸缩振动模式。 振动装置包括由简并半导体制成的Si层，氧化硅层，压电层以及施加电压到压电层的第一和第二电极。 当Si层的总厚度由T1表示时，氧化硅层的总厚度由T2表示，当未设置氧化硅层3时的振动装置中的TCF表示为x（ppm / K ），T2 /（T1 + T2）在（-0.0003x2-0.0256x + 0.0008）±0.05的范围内。