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    Vibrating device
    2.
    发明授权
    Vibrating device 有权
    振动装置

    公开(公告)号：US09584093B2

    公开(公告)日：2017-02-28

    申请号：US14933336

    申请日：2015-11-05

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Toshio Nishimura ,  Takashi Hase ,  Keisuke Takeyama ,  Hiroaki Kaida ,  Keiichi Umeda ,  Takehiko Kishi ,  Hiroshi Yamada

    IPC: H03H9/21

    CPC classification number: H03H9/21

    Abstract: A vibrating device having a number 2N (N is an integer equal to 2 or larger) of tuning fork arms extending in a first direction are arranged side by side in a second direction. Phases of flexural vibrations of the number N of tuning fork arms positioned at a first side of an imaginary line A, which passes a center of a region in the second direction where the number 2N of tuning fork arms are disposed and which extends in the first direction, are symmetric to phases of flexural vibrations of the number N of tuning fork arms positioned at a second side of the imaginary line opposite the first side.

    Abstract translation: 具有沿第一方向延伸的音叉臂的数量为2N（N是等于2或更大的整数）的振动装置在第二方向上并排布置。 定位在假想线A的第一侧的音叉臂数量N的弯曲振动相位，该假想线A的第二方向的中心位于音叉臂的数目2N的第二方向上，并且在第一方向上延伸 方向，对称于位于与第一侧相对的假想线的第二侧的音叉臂数量N的弯曲振动的相位。

    Vibrating device
    6.
    发明授权
    Vibrating device 有权

    公开(公告)号：US09866199B2

    公开(公告)日：2018-01-09

    申请号：US14937026

    申请日：2015-11-10

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Toshio Nishimura ,  Takashi Hase ,  Keisuke Takeyama ,  Hiroaki Kaida ,  Keiichi Umeda ,  Takehiko Kishi ,  Hiroshi Yamada

    IPC: H03H9/21 ,  H01L41/047

    CPC classification number: H03H9/21 ,  H01L41/0478

    Abstract: A vibrating device having tuning fork arms extending in a first direction that are joined to a base portion and are arranged side by side in an second direction. Each of the tuning fork arms has a structure that a silicon oxide layer is laminated on a Si layer made of a degenerate semiconductor, and that an excitation portion is provided on the silicon oxide layer. When a total thickness of the Si layer is denoted by T1, a total thickness of the silicon oxide layer is denoted by T2, and the temperature coefficient of resonant frequency (TCF) when the silicon oxide layer is not provided on the Si layer is denoted by x, a thickness ratio T2/(T1+T2) is within a range of (−0.0002x2−0.0136x+0.0014)±0.05.

    VIBRATING DEVICE
    9.
    发明申请
    VIBRATING DEVICE 有权
    振动装置

    公开(公告)号：US20160065173A1

    公开(公告)日：2016-03-03

    申请号：US14937026

    申请日：2015-11-10

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： TOSHIO NISHIMURA ,  Takashi Hase ,  Keisuke Takeyama ,  Hiroaki Kaida ,  Keiichi Umeda ,  Takehiko Kishi ,  Hiroshi Yamada

    IPC: H03H9/21 ,  H01L41/047

    CPC classification number: H03H9/21 ,  H01L41/0478

    Abstract: A vibrating device having tuning fork arms extending in a first direction that are joined to a base portion and are arranged side by side in an second direction. Each of the tuning fork arms has a structure that a silicon oxide layer is laminated on a Si layer made of a degenerate semiconductor, and that an excitation portion is provided on the silicon oxide layer. When a total thickness of the Si layer is denoted by T1, a total thickness of the silicon oxide layer is denoted by T2, and the temperature coefficient of resonant frequency (TCF) when the silicon oxide layer is not provided on the Si layer is denoted by x, a thickness ratio T2/(T1+T2) is within a range of (−0.0002x2−0.0136x+0.0014)±0.05.

    Abstract translation: 一种振动装置，其具有沿第一方向延伸的音叉臂，所述音叉臂连接到基部并沿第二方向并排设置。 每个音叉臂具有在由简并半导体制成的Si层上层叠氧化硅层的结构，并且在氧化硅层上设置激发部。 当Si层的总厚度由T1表示时，氧化硅层的总厚度由T2表示，并且在Si层上未设置氧化硅层时的共振频率（TCF）的温度系数表示为 通过x，厚度比T2 /（T1 + T2）在（-0.0002x2-0.0136x + 0.0014）±0.05的范围内。

    VIBRATING DEVICE
    10.
    发明申请
    VIBRATING DEVICE 有权
    振动装置

    公开(公告)号：US20160064642A1

    公开(公告)日：2016-03-03

    申请号：US14939270

    申请日：2015-11-12

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： TOSHIO NISHIMURA ,  Keiichi Umeda ,  Takashi Hase ,  Keisuke Takeyama ,  Takehiko Kishi ,  Hiroshi Yamada

    IPC: H01L41/09 ,  H01L41/047 ,  H01L41/083

    CPC classification number: H01L41/09 ,  H01L41/047 ,  H01L41/083 ,  H03H9/02448 ,  H03H9/0595 ,  H03H9/2452 ,  H03H2009/155

    Abstract: A vibrating device that is in the form of a rectangular plate having opposed long sides and opposed short sides, and that utilizes an expanding and contracting vibration mode in a direction of the short sides. The vibrating device includes a Si layer made of a degenerate semiconductor, a silicon oxide layer, a piezoelectric layer, and first and second electrodes through which a voltage is applied to the piezoelectric layer. When a total thickness of the Si layer is denoted by T1, a total thickness of the silicon oxide layer is denoted by T2, and the TCF in the vibrating device when the silicon oxide layer 3 is not provided is denoted by x(ppm/K), T2/(T1+T2) is within a range of (−0.0003x2−0.0256x+0.0008)±0.05.

    Abstract translation: 一种振动装置，其形式为矩形板，具有相对的长边和相对的短边，并且在短边方向上使用伸缩振动模式。 振动装置包括由简并半导体制成的Si层，氧化硅层，压电层以及施加电压到压电层的第一和第二电极。 当Si层的总厚度由T1表示时，氧化硅层的总厚度由T2表示，当未设置氧化硅层3时的振动装置中的TCF表示为x（ppm / K ），T2 /（T1 + T2）在（-0.0003x2-0.0256x + 0.0008）±0.05的范围内。

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