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公开(公告)号：US20220190795A1
公开(公告)日：2022-06-16
申请号：US17549626
申请日：2021-12-13
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Masatoshi HASE
Abstract: A power amplifier circuit includes an amplifier transistor which amplifies a radio frequency signal applied to its base and outputs the amplified signal; a resistance element having a first end, and a second end electrically connected to the base of the amplifier transistor; a first bias transistor having a collector to which a first voltage is applied, a base to which a first bias voltage is applied, and an emitter electrically connected to the first end of the resistance element and which supplies a bias current to the base of the amplifier transistor through the resistance element; and a second bias transistor having an emitter electrically connected to the emitter of the first bias transistor and the first end of the resistance element, a base to which a second bias voltage is applied, and a collector to which a second voltage lower than the first voltage is applied.
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公开(公告)号：US20220122901A1
公开(公告)日：2022-04-21
申请号：US17504316
申请日：2021-10-18
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shinnosuke TAKAHASHI , Masayuki AOIKE , Masatoshi HASE , Fumio HARIMA
IPC: H01L23/373 , H01L25/065 , H01L25/18 , H01L23/00 , H01L25/00
Abstract: A bond layer including at least one metal region in a plan view is disposed on a surface layer portion of a substrate formed from a semiconductor. A semiconductor element is disposed on the bond layer and includes a first transistor disposed on a first metal region that is a metal region as the at least one metal region of the bond layer and including a collector layer electrically coupled to the first metal region, a base layer disposed on the collector layer, and an emitter layer disposed on the base layer. A first emitter electrode is disposed on the emitter layer of the first transistor. A first conductor protrusion is disposed on the first emitter electrode. The thermal conductivity of the semiconductor material of the surface layer portion is higher than that of each of the collector layer, the base layer, and the emitter layer of the first transistor.
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公开(公告)号：US20220021350A1
公开(公告)日：2022-01-20
申请号：US17376780
申请日：2021-07-15
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Masatoshi HASE , Hitoshi AKAMINE
Abstract: A power amplifier module includes a first amplifier that amplifies a power level of a first input signal in a predetermined frequency band and outputs a first signal of a first power level; a first impedance transformer connected to the first amplifier and including a transmission line transformer; a second amplifier that amplifies a power level of a second input signal in the predetermined frequency band and outputs a second signal of the first power level; a second impedance transformer connected to the second amplifier and including a transmission line transformer; and a combiner that combines the first signal inputted through the first impedance transformer and the second signal inputted through the second impedance transformer into an output signal of a second power level larger than the first power level and includes a transmission line transformer.
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公开(公告)号：US20160322944A1
公开(公告)日：2016-11-03
申请号：US15138239
申请日：2016-04-26
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Masatoshi HASE
CPC classification number: H04B1/04 , H03F1/0261 , H03F1/56 , H03F3/19 , H03F3/191 , H03F3/21 , H03F3/245 , H03F2200/18 , H03F2200/222 , H03F2200/318 , H03F2200/336 , H03F2200/387 , H03F2200/411 , H03F2200/451 , H03F2200/555 , H04B2001/0416
Abstract: A power amplification module includes a first amplification transistor that receives a first signal outputs an amplified second signal from the collector thereof; and a bias circuit that supplies a bias current to the base of the first amplification transistor. The first bias circuit includes a first transistor that is diode connected and is supplied with a bias control current; a second transistor that is diode connected, the collector thereof being connected to the emitter of the first transistor; a third transistor, the base thereof being connected to the base of the first transistor, and the bias current being output from the emitter thereof; a fourth transistor, the collector thereof being connected to the emitter of the third transistor and the base thereof being connected to the base of the second transistor; and a first capacitor between the base and the emitter of the third transistor.
Abstract translation: 功率放大模块包括：第一放大晶体管，其接收第一信号，从其集电极输出放大的第二信号; 以及向第一放大晶体管的基极提供偏置电流的偏置电路。 第一偏置电路包括二极管连接并被提供偏置控制电流的第一晶体管; 二极管连接的第二晶体管，其集电极连接到第一晶体管的发射极; 第三晶体管，其基极连接到第一晶体管的基极，偏置电流从其发射极输出; 第四晶体管，其集电极连接到第三晶体管的发射极，其基极连接到第二晶体管的基极; 以及第三晶体管的基极和发射极之间的第一电容器。
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公开(公告)号：US20240388264A1
公开(公告)日：2024-11-21
申请号：US18785713
申请日：2024-07-26
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Masatoshi HASE , Seiko NETSU
Abstract: A Class E amplifier is configured to amplify a differential signal. Two output nodes of the Class E amplifier are connected to the power supply terminal with at least one choke inductor interposed therebetween. The Class E amplifier includes two transistors. The two transistors each includes a base or a gate connected to a corresponding one of two input nodes of the Class E amplifier and a collector or a drain connected to a corresponding one of the two output nodes of the Class E amplifier. First capacitors are each connected between the collector or the drain and an emitter or a source of a corresponding one of the two transistors. A first inductor is connected between the collector or the drain of one of the two transistors and the collector or the drain of the other of the two transistors.
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Patent Agency Ranking
公开(公告)号：US20240146271A1
公开(公告)日：2024-05-02
申请号：US18499666
申请日：2023-11-01
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Masatoshi HASE , Koudai SUGIYAMA , Masamichi TOKUDA , Seiko NETSU
CPC classification number: H03F3/60 , H01P5/10 , H01P5/18 , H03F1/56 , H03F2200/451
Abstract: A first transmission line transformer receives and outputs an unbalanced signal and performs impedance transformation. A second transmission line transformer performs unbalanced-to-balanced transformation. The first transmission line transformer includes a first main line and a first sub-line. The direction of the first main line is identical to the direction of the first sub-line. An end of the first sub-line is grounded. An end of the first main line is coupled to the unbalanced-signal input/output node. The second transmission line transformer includes a second main line and a second sub-line. The direction of the second main line is identical to a direction of the second sub-line. An end of the second main line and the second sub-line are grounded. An end of the second main line and the second sub-line are coupled to the balanced-signal input/output nodes.
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公开(公告)号：US20230053456A1
公开(公告)日：2023-02-23
申请号：US18045134
申请日：2022-10-07
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Masatoshi HASE , Mitsunori SAMATA
Abstract: A power amplifier unit includes a power amplifier circuit that amplifies a radio-frequency input signal, a first impedance matching circuit that performs impedance matching for an output signal of the power amplifier circuit, a second-order harmonic termination circuit on an output side of the first impedance matching circuit and that reflects at least part of even-ordered and odd-ordered harmonics contained in a signal input from the first impedance matching circuit to output the at least part of the harmonics from an input terminal as a radio-frequency signal and outputs a radio-frequency signal containing a fundamental and the remainder of the harmonics from an output terminal, and a filter that is on a subsequent stage of the second-order harmonic termination circuit, that attenuates at least part of the even-ordered and odd-ordered harmonics, and that outputs a radio-frequency signal including the fundamental and the remainder of the even-ordered and odd-ordered harmonics.
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公开(公告)号：US20220209720A1
公开(公告)日：2022-06-30
申请号：US17655373
申请日：2022-03-18
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Masatoshi HASE
Abstract: Provided is a power amplifier circuit that can increase output power and also reduce the effect of intermodulation distortion. The power amplifier circuit includes a power divider, a distortion compensation circuit provided on the secondary path, a power combiner, and a first amplifier configured. The distortion compensation circuit includes a generation circuit configured to generate the second-harmonic wave of the input signal, a filter circuit configured to attenuate the fundamental wave and pass the second-harmonic wave, and a phase adjustment circuit configured to adjust the phase of the second-harmonic wave.
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公开(公告)号：US20220190124A1
公开(公告)日：2022-06-16
申请号：US17549566
申请日：2021-12-13
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shaojun MA , Shigeki KOYA , Masayuki AOIKE , Shinnosuke TAKAHASHI , Yasunari UMEMOTO , Masatoshi HASE
IPC: H01L29/40 , H01L29/417 , H01L29/423 , H01L29/737 , H03F3/217 , H01L29/43
Abstract: A power amplifier that includes a substrate, and an emitter layer, a base layer, and a collector layer laminated in this order on a major surface of the substrate includes an electrical insulator provided adjacent to the emitter layer, an emitter electrode provided between the substrate and both the emitter layer and the electrical insulator, a base electrode electrically connected to the base layer, and a collector electrode electrically connected to the collector layer. The emitter electrode, the electrical insulator, and the base layer are provided between the substrate and the base electrode in a direction perpendicular to the major surface of the substrate.
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公开(公告)号：US20210320628A1
公开(公告)日：2021-10-14
申请号：US17355926
申请日：2021-06-23
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Masatoshi HASE
IPC: H03F1/30 , H03G3/30 , H01L23/66 , H01L29/08 , H01L29/737 , H03F3/19 , H03F3/24 , H03F3/191 , H03F3/195
Abstract: A power amplification module includes: a first bipolar transistor in which a radio frequency signal is input to a base and an amplified signal is output from a collector; a second bipolar transistor that is thermally coupled with the first bipolar transistor and that imitates operation of the first bipolar transistor; a third bipolar transistor in which a first control voltage is supplied to a base and a first bias current is output from an emitter; a first resistor that generates a third control voltage corresponding to a collector current of the second bipolar transistor at a second terminal; and a fourth bipolar transistor in which a power supply voltage is supplied to a collector, the third control voltage is supplied to a base, and a second bias current is output from an emitter.
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