公开(公告)号：US20150033521A1

公开(公告)日：2015-02-05

申请号：US14488447

申请日：2014-09-17

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Munehisa WATANABE ,  Hideki IWAMOTO ,  Hajime KANDO ,  Syunsuke KIDO

IPC: H03H3/10

CPC classification number: H03H9/0222 ,  H01L41/04 ,  H01L41/047 ,  H01L41/0477 ,  H01L41/18 ,  H01L41/22 ,  H03H3/02 ,  H03H3/04 ,  H03H3/08 ,  H03H3/10 ,  H03H9/02574 ,  H03H9/02834 ,  H03H9/54 ,  H03H2003/023 ,  H03H2003/027 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

Abstract translation: 弹性波装置包括支撑基板，叠层在支撑基板上的高频膜，其中传播的体波的声速高于在压电膜中传播的弹性波的声速， 叠层在高声速膜上并且其中传播的体波的声速低于在压电膜中传播的体波的声速的低声速膜，将压电膜堆叠在 低声速膜和堆叠在压电膜的表面上的IDT电极。

公开(公告)号：US20230037734A1

公开(公告)日：2023-02-09

申请号：US17968828

申请日：2022-10-19

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Munehisa WATANABE ,  Hideki IWAMOTO ,  Hajime KANDO ,  Syunsuke KIDO

IPC: H03H9/02 ,  H03H3/02 ,  H03H3/04 ,  H03H3/08 ,  H01L41/04 ,  H01L41/047 ,  H03H9/54 ,  H03H3/10 ,  H01L41/18 ,  H01L41/22

Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

公开(公告)号：US20220123711A1

公开(公告)日：2022-04-21

申请号：US17565508

申请日：2021-12-30

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yasumasa TANIGUCHI ,  Takuro OKADA ,  Munehisa WATANABE

IPC: H03H9/02

Abstract: An acoustic wave device includes a silicon substrate, a piezoelectric layer, and an IDT electrode. Each of the silicon substrate and the piezoelectric layer includes first and second opposed main surfaces. The IDT electrode is on the first main surface of the piezoelectric layer, and includes first and second electrode fingers. When a wavelength of an acoustic wave determined by an electrode finger pitch of the IDT electrode is denoted as λ, a distance between the first main surface of the silicon substrate and the second main surface of the piezoelectric layer in a thickness direction of the silicon substrate is less than about 0.84λ. The first main surface of the silicon substrate is rougher than the first main surface of the piezoelectric layer.

公开(公告)号：US20170331449A1

公开(公告)日：2017-11-16

申请号：US15666596

申请日：2017-08-02

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Munehisa WATANABE ,  Hideki IWAMOTO ,  Hajime KANDO ,  Syunsuke KIDO

IPC: H03H9/02 ,  H03H9/54 ,  H01L41/04 ,  H01L41/047 ,  H03H3/08 ,  H03H3/04 ,  H03H3/02 ,  H01L41/22 ,  H01L41/18 ,  H03H3/10

CPC classification number: H03H9/0222 ,  H01L41/04 ,  H01L41/047 ,  H01L41/0477 ,  H01L41/18 ,  H01L41/22 ,  H03H3/02 ,  H03H3/04 ,  H03H3/08 ,  H03H3/10 ,  H03H9/02574 ,  H03H9/02834 ,  H03H9/54 ,  H03H2003/023 ,  H03H2003/027 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

公开(公告)号：US20140152145A1

公开(公告)日：2014-06-05

申请号：US13900743

申请日：2013-05-23

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Hajime KANDO ,  Syunsuke KIDO ,  Keiji OKADA ,  Munehisa WATANABE

IPC: H03H9/25 ,  H03H3/02

CPC classification number: H03H9/25 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02228 ,  H03H9/02559 ,  H03H9/02574 ,  H03H9/02834 ,  Y10T29/42

Abstract: An elastic wave device includes a support layer with a through-hole or a recess opened at an upper surface thereof, a piezoelectric thin film arranged on the support layer to extend above the recess or the through-hole of the support layer, and an IDT electrode defined on at least one of upper and lower surfaces of the piezoelectric thin film in a region of the piezoelectric thin film, the region extending above the recess, or the through-hole. A secondary mode of a plate wave, which contains a U1 component as a main component, is utilized. The piezoelectric thin film is made of LiTaO3, and Euler angles (φ, θ, ψ) of the LiTaO3 fall within specific ranges.

Abstract translation: 弹性波装置包括：具有通孔或在其上表面开口的凹部的支撑层，布置在支撑层上以在支撑层的凹部或通孔上方延伸的压电薄膜，以及IDT 在所述压电薄膜的区域中的所述压电薄膜的上表面和下表面中的至少一个上限定的电极，所述凹部上方延伸的区域或所述通孔。 使用包含U1部件作为主要部件的平板波的次级模式。 压电薄膜由LiTaO3制成，LiTaO3的欧拉角（＆phgr; as;ψ）落在特定范围内。

公开(公告)号：US20130285768A1

公开(公告)日：2013-10-31

申请号：US13920492

申请日：2013-06-18

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Munehisa WATANABE ,  Hideki IWAMOTO ,  Hajime KANDO ,  Syunsuke KIDO

IPC: H03H9/54

CPC classification number: H03H9/0222 ,  H01L41/04 ,  H01L41/047 ,  H01L41/0477 ,  H01L41/18 ,  H01L41/22 ,  H03H3/02 ,  H03H3/04 ,  H03H3/08 ,  H03H3/10 ,  H03H9/02574 ,  H03H9/02834 ,  H03H9/54 ,  H03H2003/023 ,  H03H2003/027 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.