公开(公告)号：US11585873B2

公开(公告)日：2023-02-21

申请号：US17370613

申请日：2021-07-08

Applicant: TDK CORPORATION ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Shinto Ichikawa ,  Katsuyuki Nakada ,  Hiroaki Sukegawa ,  Seiji Mitani ,  Tadakatsu Ohkubo ,  Kazuhiro Hono

IPC: G01R33/09 ,  G11B5/39 ,  H01L43/10 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein the non-magnetic layer includes a first layer and a second layer, and wherein a lattice constant α of the first layer and a lattice constant β of the second layer satisfy a relationship of β−0.04×α≤2×α≤β+0.04×α.

公开(公告)号：US10749105B2

公开(公告)日：2020-08-18

申请号：US15939903

申请日：2018-03-29

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Jiamin Chen ,  Yuya Sakuraba ,  Jun Liu ,  Hiroaki Sukegawa ,  Kazuhiro Hono

IPC: H01L43/10 ,  H01F10/16 ,  H01F10/28 ,  H01F10/30 ,  H01L43/08 ,  H01L43/12 ,  H01F10/193 ,  H01F10/32

Abstract: To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11, a base layer 12 having a B2 structure laminated on the silicon substrate 11, a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14, an upper ferromagnetic layer 16, and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.

公开(公告)号：US08872291B2

公开(公告)日：2014-10-28

申请号：US13627664

申请日：2012-09-26

Applicant: National Institute for Materials Science

Inventor： Hiroaki Sukegawa ,  Seiji Mitani ,  Tomohiko Niizeki ,  Tadakatsu Ohkubo ,  Kouichiro Inomata ,  Kazuhiro Hono ,  Masafumi Shirai ,  Yoshio Miura ,  Kazutaka Abe ,  Shingo Muramoto

IPC: H01L29/82 ,  H01L43/10 ,  H01L27/22

CPC classification number: H01L43/10 ,  H01L27/228 ,  H01L43/08

Abstract: A ferromagnetic tunnel junction structure comprising a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer includes a crystalline non-magnetic material having constituent elements that are similar to those of an crystalline oxide that has spinel structure as a stable phase structure; the non-magnetic material has a cubic structure having a symmetry of space group Fm-3m or F-43m in which atomic arrangement in the spinel structure is disordered; and an effective lattice constant of the cubic structure is substantially half of the lattice constant of the oxide of the spinel structure.

Abstract translation: 铁磁隧道结结构，其包括介于第一铁磁层和第二铁磁层之间的第一铁磁层，第二铁磁层和隧道势垒层，其中隧道势垒层包括具有构成元素的结晶非磁性材料 类似于具有尖晶石结构作为稳定相结构的结晶氧化物的那些; 非磁性材料具有空间群Fm-3m或F-43m对称的立方结构，其中尖晶石结构中的原子排列紊乱; 并且立方结构的有效晶格常数大致是尖晶石结构的氧化物的晶格常数的一半。

公开(公告)号：US20130221461A1

公开(公告)日：2013-08-29

申请号：US13627664

申请日：2012-09-26

Applicant: National Institute for Materials Science

Inventor： Hiroaki Sukegawa ,  Seiji Mitani ,  Tomohiko Niizeki ,  Tadakatsu Ohkubo ,  Kouichiro Inomata ,  Kazuhiro Hono ,  Masafumi Shirai ,  Yoshio Miura ,  Kazutaka Abe ,  Shingo Muramoto

IPC: H01L29/82

CPC classification number: H01L43/10 ,  H01L27/228 ,  H01L43/08

Abstract: A ferromagnetic tunnel junction structure comprising a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer includes a crystalline non-magnetic material having constituent elements that are similar to those of an crystalline oxide that has spinel structure as a stable phase structure; the non-magnetic material has a cubic structure having a symmetry of space group Fm-3m or F-43m in which atomic arrangement in the spinel structure is disordered; and an effective lattice constant of the cubic structure is substantially half of the lattice constant of the oxide of the spinel structure.

Abstract translation: 铁磁隧道结结构，其包括介于第一铁磁层和第二铁磁层之间的第一铁磁层，第二铁磁层和隧道势垒层，其中隧道势垒层包括具有构成元素的结晶非磁性材料 类似于具有尖晶石结构作为稳定相结构的结晶氧化物的那些; 非磁性材料具有空间群Fm-3m或F-43m对称的立方结构，其中尖晶石结构中的原子排列紊乱; 并且立方结构的有效晶格常数大致是尖晶石结构的氧化物的晶格常数的一半。