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公开(公告)号：US20170092307A1
公开(公告)日：2017-03-30
申请号：US15339094
申请日：2016-10-31
发明人： Ye DU , Takao FURUBAYASHI , Yukiko TAKAHASHI , Kazuhiro HONO
CPC分类号： G11B5/3932 , B82Y10/00 , G01R33/093 , G11B5/09 , G11B5/1278 , G11B5/39 , G11B5/3906 , G11B2005/3996 , H01L43/08 , H01L43/10
摘要： The CPPGMR element of the present invention has an orientation layer 12 formed on a substrate 11 to texture a Heusler alloy into a (100) direction, an underlying layer 13 that is an electrode for magneto-resistance measurement stacked on the orientation layer 12, a lower ferromagnetic layer 14 and an upper ferromagnetic layer 16 each stacked on the underlying layer 13 and made of a Heusler alloy, a spacer layer 15 sandwiched between the lower ferromagnetic layers 14 and the upper ferromagnetic layers 16, and a cap layer 17 stacked on the upper ferromagnetic layer 16 for surface-protection. This manner makes it possible to provide, inexpensively, an element using a current-perpendicular-to-plane giant magneto-resistance effect (CPPGMR) of a thin film having a trilayered structure of a ferromagnetic metal/a nonmagnetic metal/a ferromagnetic metal, thereby showing excellent performances.
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12.发明公开公开(公告)号：US20240347306A1
公开(公告)日：2024-10-17
申请号：US18294251
申请日：2022-06-23
发明人： Hiromitsu CHATANI , Daisuke ISHIKAWA , Jie TANG , Tadakatsu OHKUBO , Shuai TANG , Jun UZUHASHI , Kazuhiro HONO
摘要： A manufacturing method for an electron source according to the present disclosure includes steps of: (A) cutting out a chip from a block of an electron emission material, (B) fixing a first end portion of the chip to a distal end of a support needle, and (C) sharpening a second end portion of the chip. The step (A) includes forming first and second grooves which constitute first and second surfaces of the chip in the block by irradiating a surface of the block with an ion beam. The first end portion of the chip includes the first surface and the second surface with the surfaces forming an angle α of 10 to 90°. The step (B) includes forming a joint between the distal end of the support needle and the first end portion of the chip.
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13.发明公开公开(公告)号：US20240186047A1
公开(公告)日：2024-06-06
申请号：US18284964
申请日：2022-03-01
发明人： Yuichi FUJITA , Yuya SAKURABA , Yoshio MIURA , Taisuke SASAKI , Kazuhiro HONO
CPC分类号： H01F10/3254 , G11B5/39 , G11B2005/3996
摘要： The present invention provides a current-perpendicular-to-plane giant magneto-resistive element that can use a high spin polarization (β) and spin asymmetry (γ) at the interface between layers, and that has a multilayered structure for easy film thickness design.
Used is a current-perpendicular-to-plane giant magneto-resistive element comprising: a substrate (11) made of an MgO substrate; and a giant magneto-resistive effect layer (17) that has at least one multilayer having first non-magnetic layers (13a), (13b), a lower ferromagnetic layer (14a), a lower Heusler alloy layer (14b), a second non-magnetic layer (15), an upper Heusler alloy layer (16b), and an upper ferromagnetic layer (16a) formed on the substrate (11).-
公开(公告)号：US20230066150A1
公开(公告)日：2023-03-02
申请号：US17797976
申请日：2020-02-06
发明人： Sunyong SONG , Seok NAMKUNG , Xin TANG , Hossein SEPEHRIAMIN , Tadakatsu OHKUBO , Kazuhiro HONO , Jiangnan LI
IPC分类号： H01F1/057
摘要： A rare-earth magnet according to an embodiment of the present invention comprises: a rare-earth magnet precursor including a composition of (R1(1-x)R2x)yFe(100-y-z-v-w)CozBvTMlw in which R1 comprises at least one of Nd or Pr, and R2 comprises Ce; and a diffusion metal including a composition of (LRE(100-p-q)HREp)TM2q, and diffused on the surface of the rare-earth magnet precursor, wherein the LRE in the diffusion metal can comprise light rare earth including Y, and the HRE can comprise heavy rare earth.
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15.发明申请公开(公告)号：US20230009284A1
公开(公告)日：2023-01-12
申请号：US17370613
申请日：2021-07-08
发明人： Shinto ICHIKAWA , Katsuyuki NAKADA , Hiroaki SUKEGAWA , Seiji MITANI , Tadakatsu OHKUBO , Kazuhiro HONO
摘要： A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein the non-magnetic layer includes a first layer and a second layer, and wherein a lattice constant α of the first layer and a lattice constant β of the second layer satisfy a relationship of β−0.04×α≤2×α≤β+0.04 ×α.
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16.发明申请公开(公告)号：US20170221507A1
公开(公告)日：2017-08-03
申请号：US15500713
申请日：2015-07-28
发明人： Takao FURUBAYASHI , Yukiko TAKAHASHI , Kazuhiro HONO , Ye DU
CPC分类号： G11B5/3906 , G11B5/1278 , G11B5/39 , G11B5/40 , G11B2005/3996 , H01L43/08 , H01L43/10
摘要： The present invention addresses the problem of providing an element which uses the current-perpendicular-to-plane giant magnetoresistance (CPPGMR) effect of a thin film having the three-layer structure of ferromagnetic metal/non-magnetic metal/ferromagnetic metal. The problem is solved by a magnetoresistive element provided with a lower ferromagnetic layer and an upper ferromagnetic layer which contain a Heusler alloy, and a spacer layer sandwiched between the lower ferromagnetic layer and the upper ferromagnetic layer, the magnetoresistive element being characterized in that the spacer layer contains an alloy having a bcc structure. Furthermore, it is preferable for the alloy to have a disordered bcc structure.
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17.发明申请公开(公告)号：US20160314825A1
公开(公告)日：2016-10-27
申请号：US15134514
申请日：2016-04-21
发明人： Hiroaki SUKEGAWA , Hwachol LEE , Kazuhiro HONO , Seiji MITANI , Tadakatsu OHKUBO , Jun LIU , Shinya KASAI , Kwangseok KIM
CPC分类号： G11C11/161 , H01F10/1933 , H01F10/3286 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
摘要： Provided is a structure having a perpendicular magnetization film which is an (Mn1-x,Gax)4N1-y (0
摘要翻译： 本发明提供一种具有垂直磁化膜的结构，其是具有通过控制和引入形成的缺氮组合物的（Mn1-x，Gax）4N1-y（0
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公开(公告)号：US20220406552A1
公开(公告)日：2022-12-22
申请号：US17768017
申请日：2020-10-20
发明人： Jie TANG , Shuai TANG , Ta-Wei CHIU , Tadakatsu OHKUBO , Jun UZUHASHI , Kazuhiro HONO , Luchang QIN
摘要： The present invention provides a simpler method for sharpening a tip of an emitter. In addition, the present invention provides an emitter including a nanoneedle made of a single crystal material, an emitter including a nanowire made of a single crystal material such as hafnium carbide (HfC), both of which stably emit electrons with high efficiency, and an electron gun and an electronic device using any one of these emitters. A method for manufacturing the emitter according to an embodiment of the present invention comprises processing a single crystal material in a vacuum using a focused ion beam to form an end of the single crystal material, through which electrons are to be emitted, into a tapered shape, wherein the processing is performed in an environment in which a periphery of the single crystal material fixed to a support is opened.
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19.发明申请公开(公告)号：US20220005499A1
公开(公告)日：2022-01-06
申请号：US17295124
申请日：2019-06-27
发明人： Kresna Bondan FATHONI , Yuya SAKURABA , Taisuke SASAKI , Tomoya NAKATANI , Yoshio MIURA , Kazuhiro HONO
摘要： The present disclosure provides: a magnetoresistive element having a large magnetoresistance change ratio (MR ratio); and a magnetic sensor, a reproducing head and a magnetic recording and reproducing device.
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公开(公告)号：US20210123991A1
公开(公告)日：2021-04-29
申请号：US16074135
申请日：2017-01-31
发明人： Hiroaki SUKEGAWA , Thomas SCHEIKE , Seiji MITANI , Tadakatsu OHKUBO , Kazuhiro HONO , Kouichiro INOMATA
摘要： The object of the present invention is to attain an unconventionally high tunnel magnetoresistance (TMR) ratio by using a barrier layer made of an MgAl2O4 type insulator material with a spinel structure. The problem can be solved by a magnetic tunnel junction in which a barrier layer is made of a cubic nonmagnetic material having a spinel structure, and both of two ferromagnetic layers that are adjacently on and below the barrier layer are made of a Co2FeAl Heusler alloy. Preferably, the nonmagnetic material is made of oxide of an Mg1-31 xAlx (0
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